• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.343-350
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• 1995

An overview will be given on recent Mossbauer and magnetization investigation of the applied field dependence of the magnetic properties of typical systems without strong magnetic anisotropy and showing the absence of magnetic saturation in high fields (including iron-rich spin glass (amorphous $Fe_{93}Zr_{7}$, soft ferromagnets (amorphous $Fe_{88}Zr_{12}$, $Fe_{70}Ni_{20}Zr_{10}$ and $Fe_{88}B_{12}$) and pure Fe). The results emphasize that shape anisotropy due to surface irregularities causes misalignment between the magnetization and the applied field in the otherwise collinear magnetic structure.

• Journal of the Korean Magnetics Society
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• v.3 no.3
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• pp.208-214
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• 1993

In order to investigate the origin of an increase in the coercivity with the Ta addition to Co-Cr films, the perpendicular magnetic anisotropy of Co-Cr film and CoCrTa film was measured by a torque magnetometer and VSM. In Co-Cr binary alloy film, the uniaxial anisotropy increased with increasing Cr content. The perpendicular magnetic anisotropy of $Co_{81.7}Cr_{16.7}Ta_{1.6}$ film was larger than that of $Co_{81}Cr_{19}$ film, both of which were deposited at the same substrate temperature of $100^{\circ}C$. The change in the perpendicular magnetic anisotropy with annealing was studied to understand the Ta addition effect. The amount of decrease in perpendicular magnetic anisotropy of the CoCrTa film by the annealing was larger than that of Co-Cr film. And the perpendicular magnetic anisotripies of Co-Cr film and CoCrTa film after annealing were almost the same. The cause of this was interpretated as the enhanced segregation of solute atoms in the Ta added thin film in the as-deposited state. The enhanced segregation of solute atoms increases the perpendicular magnetic anisotropy of the film, and causes the increase of perpendicular coercivity of the film.

• Journal of the Korean Magnetics Society
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• v.23 no.1
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• pp.7-11
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• 2013

We investigate the perpendicular magnetic anisotropy in $TiO_2$/Co/Pd on GaAs(100), MgO(100), MgO(111), Si(100), and glass substrates. We find that the roughness of $TiO_2$ depends on the $O_2$ partial pressure in the magnetron sputtering process. The perpendicular magnetic anisotropies are found in all substrates with $TiO_2$ seed layer, and the perpendicular magnetic anisotropy of Co/Pd system is insensitive on the type of the substrate when the thickness of $TiO_2$ seed layer is thicker than 5 nm. However, MgO(111) substrate promotes $TiO_2$ rutile (111) structure, and it causes largest perpendicular magnetic anisotropy in $TiO_2$/Co/Pd(111) structures.

• Proceedings of the Korean Magnestics Society Conference
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• 2016.11a
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• pp.155-155
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• 2016

• Journal of Magnetics
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• v.16 no.3
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• pp.197-200
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• 2011

Using the full potential linearized augmented plane wave (FLAPW) method, the influences of uniform and tetragonal strains on the magnetic state have been explored for chemically ordered bulk $L1_2$ $FePt_3$. The ordered state displays antiferromagnetic $Q_1$ (AFM-$Q_1$) state but it transitions into antiferromagnetic $Q_2$ (AFM-$Q_2$) state at about 10% uniform strain. The ferromagnetic (FM) state is observed at 11% uniform strain. For tetragonal strain, it is also seen that the transition from AFM-$Q_1$ to AFM-$Q_2$ depends on the strength and direction of the applied strain. The FM state does not appear in this case. Magnetocrystalline anisotropy (MCA) calculations for tetragonal distortion reveal that the spin reorientation transition occurs. In addition, we find that the direction of magnetization and the magnitude of magnetic anisotropy energy strongly depend on the c/a ratio.

• Journal of the Korean Magnetics Society
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• v.18 no.4
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• pp.147-153
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• 2008

It has been well-known that the Fe/GaAs heterostructure has a small lattice mismatch of 1.4% between Fe and GaAs, and the Fe layer is grown epitaxially on the the GaAs substrate. There are rich physics are observed in the GaAs/Fe interface, and the spininjection is actively studied due to its potential applications for spintronics devices. We fabricated Fe wedge layer in the thickness range $0{\sim}3.4$ nm on the GaAs(100) surface with 5-nm thick Au capping layer. The magnetic anisotropy of the Fe/GaAs system was investigated by employing Brillouin light scattering(BLS) measurements in this study. The spin wave excitation of Fe layer was studied as the function of intensity and the in-plane angle of external magnetic field, and thickness of Fe layer. Also these various dependences were analyzed with analytic expression of spin wave surface mode in order to determine the magnetic anisotropies. It has been found that the GaAs/Fe/Au system has additional uniaxial magnetic anisotropy, while the bulk Fe has biaxial anisotropy. The uniaxial anisotropy shows increasing dependency respected to decreasing thickness of Fe layer while biaxial anisotropy is reduced with Fe film thickness. This result allows the analysis that the uniaxial anisotropy is originated from interface between GaAs surface and Fe layer.

• Proceedings of the KSMRM Conference
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• 2001.11a
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• pp.165-165
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• 2001

Purpose： To obtain quantitative diffusion-tensor anisotropy information of human cerebral structu using turbo STEAM diffusion-tensor imaging. Method： Quantitative diffusion anisotropy MR images were obtained in 7 healthy adults using turbo STEAM sequence and a combination of tetrahedral and orthogonal diffusi gradients. Both relative anisotropy(RA) and fractional anisotropy(FA) values were measured various brain regions. The anisotropy index was then compared with the reported valu resulting from EPI-based diffusion tensor imaging.

• Proceedings of the KSMRM Conference
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• 2001.11a
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• pp.138-138
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• 2001

Purpose： To obtain quantitative diffusion-tensor anisotropy information of human cerebral structu using turbo STEAM diffusion-tensor imaging. Method： Quantitative diffusion anisotropy MR images were obtained in 7 healthy adults using turbo STEAM sequence and a combination of tetrahedral and orthogonal diffusi gradients. Both relative anisotropy(RA) and fractional anisotropy(FA) values were measured various brain regions. The anisotropy index was then compared with the reported valu resulting from EPI-based diffusion tensor imaging.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.303-305
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• 2000

The effect of anisotropy field on the high frequency magnetic characteristics of FeTaN films was investigated. Those films show good magnetic properties : 4$\pi$Ms of 13KG, Hc of 0.6 Oe, effective permeability(${\mu}$') of 800 with a stable frequency response up to 800MHz. The films also show a large anisotropy field(Hk) over 21Oe. It result from the increased anisotropy of patterned FeTaN films. The combination of high saturation magnetization and relatively high Hk in these films is believed to the partly responsible for FeTaN for the excellent high-frequency behavior.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.556-561
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• 2013

Interest in spin-torque oscillators (STOs) has been increasing due to their potential use in communication devices. In particular the magnetic tunnel junction-based STO (MTJ-STO) with high perpendicular anisotropy is gaining attention since it can generate high output power. In this paper, a circuit-level model for an in-plane magnetized MTJ-STO with partial perpendicular anisotropy is proposed. The model includes the perpendicular torque and the shift field for more accurate modeling. The bias voltage dependence of perpendicular torque is represented as quadratic. The model is written in Verilog-A, and simulated using HSPICE simulator with a current-mirror circuit and a multi-stage wideband amplifier. The simulation results show the proposed model can accurately replicate the experimental data such that the power increases and the frequency decreases as the value of the perpendicular anisotropy gets close to the value of the demagnetizing field.