• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.1
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• pp.65-70
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• 1994

GaAs power MESFETs with 0.8$\mu$m gate lengths are fabricated using image reversal (IR) methods on the wafer with an undoped surface layer grown by MOCVD. The fabricated GaAs power MESFETs with an undoped surface layer show that an ideality factor 1.17, a built-in potential 0.83 V, a pinch-off voltage -2.7 V, a specfic contact resistance 1.21$\times$10$^{5}$ ~3.42$\times$10$^{2}$$\Omega$-cm$^{2}$ and an extrinsic g$_{m}$ = 103.5 mS/mm. The maximum RF output power densities of the 0.8$\mu$m devices are 360 mW/mm and 499 mW/mm, and power added efficiencies 29.67% and 29.05%, for the unit gate width 150$\mu$m and 200$\mu$m at 12 GHz.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.885-890
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• 1996

Undoped p-type and Te doped n-type GaSb crystals were grown by the vertical Bridgman method. The lattice constant of the GaSb crystals was 6.096.+-.000373.angs.. The carrier concentration, the resistivity, and the carrier mobility measured by the van der Pauw method were p.iden.8*10$^{16}$ c $m^{-3}$ , .rho..iden.0.20 .ohm.-cm, .mu.$_{p}$ .iden.400c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.1*10$^{17}$ c $m^{-3}$ , .rho..iden.0.15 .ohm.-cm, .mu.$_{n}$ .iden.500c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type at 300K. In case of treatment with metal ion of R $u^{+3}$, P $t^{+4}$, the carrier concentration, resistivity and carrier mobility of the GaSb crystals were p.iden.2*10$^{17}$ c $m^{-3}$ , .rho..iden.0.08.ohm.-cm, .mu.$_{p}$ .iden.420c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.2.5*10$^{17}$ c $m^{-3}$ , .rho..iden.0.07.ohm.-cm, .mu.$_{n}$ .iden.520c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type respectively. GaSb crystals had a tendency to lower resistivity and higher mobility, for surface treatment with metal ion effectively diminished surface recombination centers.s.

• Resources Recycling
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• v.24 no.4
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• pp.50-55
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• 2015

In this study, we have investigated solvent extraction of Ga and recovery of high pure Ga solution from MOCVD dust for manufacturing of LED chip. Effect of extractan, concentration of extractant were examined for choosing the more effective extractant and high pure Ga solution was fabricated by multi-stage extraction/stripping process. For extraction/separation of Ga based on the analysis of raw-material in previous study, 3 different extractants PC 99A, DP-8R, Cyanex 272 has been investigated and the extraction efficiency of 1.5 M Cyanex 272 was 43.8%. It was conformed that extraction efficiency of Ga was 83% in multi-stage extraction and 5N high purity Ga stripping solution without impurities also obtained.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.85-90
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• 2002

$RuO_2$/GaN and related contacts were investigated for Schottky contacts in GaN-Based optical and electronic devices. We demonstrated that an $RuO_2$ film forms a stable Schottky contact on a GaN layer with a barrier height (${\Phi}_B$) of 1.46 eV and transmittance of 70% in the visible and near UV region. $RuO_2$/GaN Schottky diode showed a breakdown at over -50V and leakage current of only 0.3 nA at -5V. The $RuO_2$/GaN Schottky type photodetector had the UV/Visible rejection ratio of over $10^5$ and the responsivity of 0.23 A/W at 330 nm. The $RuO_2$ gate AlGaN/GaN EFET exhibited high drain current ($I_d$) of 689.3 mA/mm and high transconductance ($g_m$) of 197.4 mS/mm. Cut-Off frequency ($f_t$) and maximum operating frequency ($f_{max}$) were measured as 27.0 GHz and 45.5 GHz, respectively.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.235-238
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• 1996

An inverted double channel AIGaAs/lnGaAs/GaAs heterostructure grown by LP-MOCVD is demonstrated and discussed. Sheet carrier densities in excess of $4.5{\times}10^{12}cm^{-2}$ at 300K are obtained with a hall mobility of $5010cm^2/V{\cdot}s$. The proposed device with a $1.8{\times}200{\mu}m^2$ gate dimension reveals an extrinsic transconductance as high as 320 mS/mm and a saturation current density as high as 820 mA/mm at 300K. This is the highest current density ever reported for GaAs MODFET's with the same gate length. Significantly improvements on gate voltage swing (up to 3.5 V) and on reverse breakdown voltage (-10V) are demonstrated due to inverted structure.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.41.1-41.1
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• 2011

본 연구에서는 MOCVD법으로 사파이어 기판위에 u-GaN를 성장한 후 Mg을 도핑시켜 p-GaN를 성장하고, RF 스퍼터를 이용하여 n-ZnO를 도포하여 n-ZnO/p-GaN 이종접합을 형성한 후 진공증착기를 이용하여 Au/Ni를 증착시켜 발광다이오드(LED)를 제작하고 전기 광학적 특성을 조사하였다. 두께가 500 nm인 u-GaN 위에 성장된 p-GaN의 운반자 농도는 $1.68{\times}10^{17}\;cm^{-3}$ 이었다. 그리고 150, 300 nm 두께의 p-GaN에 대하여 측정된 DXRD 반치폭은 각각 450 arcsec, 396 arcsec 이었고, 상온에서 2.8~3.0 eV 영역에서 Mg 억셉터와 관련된 광루미네센스가 검출되었다. RF 스퍼터링에 의해 0.7 nm/min의 속도로 증착된 n-ZnO 박막은 증착 두께에 따라 비저항이 27.7 $m{\Omega}{\cdot}cm$ 에서 6.85 $m{\Omega}{\cdot}cm$ 까지 감소하였다. 그리고 n-ZnO 박막은 (0002)면으로 우선 배향되었으며, 상온에서 에너지갭 관련된 광루미네센스가 3.25 eV 부근에서 주되게 검출되었다. n-ZnO/p-GaN 이종접합 LED의 전류전압 특성곡선은 다이오드 방정식에 만족하는 특성을 나타내었다. 다이오드 지수는 3 V 이하 영역에서 1.64, 3~5 V 영역에서 0.85이었다. 그리고 5 V 이상 영역에서 공간전하의 제한을 받았으며, 다이오드 지수는 3.36이었다. 한편, 역방향 전류전압 특성은 p-GaN 박막의 두께에 영향을 받았으며, p-GaN 박막의 두께가 150, 300 nm 일 때 각각의 누설 전류는 $1.3{\times}10^{-3}$ mA와 $8.6{\times}10^{-5}$ mA 이었다. 상온에서 측정된 EL 스펙트럼의 주된 발광피크는 430 nm이었고, 반치폭은 49.5 nm이었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.110-113
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• 2011

In this paper, we propose a new method for the fabrication of GaN microstructures formed only on the vertex of GaN pyramid by using of metal catalysts. GaN pyramidal structures were selectively grown on 3 ${\mu}m$ $SiO_2$ dot patterns followed by thin film deposition of Au and Cr only on the vertex area of the GaN pyramids with precisely controlled photolithography. After the metal deposition, the samples were loaded in the MOVPE reactor for the growth of GaN microstructures for 10 minutes. Temperature for the growth of the GaN microstructures was changed from $650^{\circ}C$ to $750^{\circ}C$. Rod type GaN microstructures were grown in the direction of vertical to the six {1-101} facets and the shape of the GaN microstructures was changed depend on the type of metal.

• ETRI Journal
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• v.18 no.3
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• pp.171-179
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• 1996

Fully passivated low noise AlGaAs/InGaAs/GaAs pseudomorphic (PM) HEMT with wide head T-shaped gates were fabricated by dose split electron beam lithography (DSL). The dimensions of gate head and footprint were optimized by controlling the splitted pattern size, dose, and spaces of each pattern. We obtained stable T-shaped gate of $0.15{\mu}m$ gate length with $1.35{\mu}m-wide$ head. The maximum extrinsic transconductance was 560 mS/mm. The minimum noise figure measured at 18 GHz at $V_{ds}=2V andI_{ds}=17mA$ was 0.41 dB with associated gain of 8.19 dB. At 12 GHz, the minimum noise figure and an associated gain were 0.26 and 10.25 dB, respectively. These noise figures are the lowest values ever reported for GaAs-based HEMTs. These results are attributed to the extremely low gate resistance of wide head T-shaped gate having a ratio of the head to footprint dimensions larger than 9.

• Journal of IKEEE
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• v.11 no.4
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• pp.272-278
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• 2007

In this paper, we report on the 2D (two-dimensional) simulation result of the DC (direct current) electrical and thermal characteristics of AlGaN/GaN HEMTs (high electron mobility transistors) grown on Si substrate, in comparison with those grown on sapphire and SiC (silicon carbide) substrate, respectively. In general, the electrical properties of HEMT are affected by electron mobility and thermal conductivity, which depend on substrate material. For this reason, the substrates of GaN-based HEMT have been widely studied today. The simulation results are compared and studied by applying general Drift-Diffusion and thermal model altering temperature as 300, 400 and 500 K, respectively. With setting T=300 K and $V_{GS}$=1 V, the $I_{D,max}$ (drain saturation current) were 189 mA/mm for sapphire, 293 mA/mm for SiC, and 258 mA/mm for Si, respectively. In addition, $G_{m,max}$ (maximum transfer conductance) of sapphire, SiC, Si was 38, 50, 31 mS/mm, respectively, at T=500 K.

• Bulletin of the Korean Chemical Society
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• v.18 no.3
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• pp.311-316
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• 1997

The synthesis and characterization of the mononuclear group 13 heterocyclic carboxaldehyde methyldithiocarbazate complexes Me2M[NC5H4CRNNC(S)SCH3] (M=Al, R=H(1); M=Ga, R=H(2); M=Al, R=CH3(3); M-Ga, R=CH3(4); M=In, R=CH3(5)) are described. Compounds 1-5 were prepared by the reaction of MMe3 (M=Al, Ga, In) with 2-formy or 2-acetylpyridine-S-methyldithiocarbazate in toluene. These compounds 1-5 have been characterized by microanalysis, NMR (1H, 13C) spectroscopy, mass spectra, and single-crystal X-ray diffraction. X-ray single-crystal diffraction analyses reveal that 4-5 are mononuclear metal compounds with coordination number of 5 and N,N,S coordination mode.