• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.2
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• pp.79-82
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• 2003

GaN nanoparticles were synthesized by the pulsed laser deposition (PLD) process on $SiO_2$substrate after irradiating the surface of the GaN sintered pellet by the ArF (193 nm) excimer laser. At this moment Ar gas pressure of 100 Pa, 50 Pa, 10 Pa and 1 Pa were applied during the ablation process and laser power of 100 mJ and 200 mJ were also applied. The synthesized fan nanoparticles were characterized by XRD, SEM, TEM, XPS and optical absorption spectra. The synthesized GaN nanoparticles had the crystallite sizes of 20~30 nm, and besides, GaN nanoparticles synthesized under low Ar gas pressure compared to the others corresponded with stoichiometry, and the optical band edge of the GaN nanoparticles was blueshifted.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.7
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• pp.1514-1519
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• 2009

We fabricated the GaNLED emitting 400 nm wavelength and improved the optical extraction efficiency by making surface patterns on n-GaN layer and ITO layer above p-GaN. In addition, the light reflection metal under the n and p pad is made and the light reflection metal is installed on the backside of the chip. The light extraction efficiency is increased by 20 % with texturing n-GaN layer and 18% with texturing ITO layer at 20 mA. Compared to planar-surface LED, the light extraction efficiency for surface texturing both n-GaN and ITO is increased by 32% at 20mA.

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.424-432
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• 1993

AlGaAs/InGaAs/GaAs pseudomorphic structures have been grown by atmosheric pressure-MOCVD . The Al incorporation efficiency is constant but slightly exceeds the Ga incorporation during the growth of AlGaAs layers at $650^{\circ}C$ . Meanwhile , the In incorporation efficiency is constant but slightly less than the Ga incorporation in InGAAs layers. InGaAs/GaAs QWs were grown and their optical properties were characterized . $\delta$-doped Al0.24Ga0.76As/In0.16 Ga0.84As p-HEMT structures were successfully grown by MOCVD and their transport properties were characterized by Hall effect and SdH measurements. SdH Measurements at 3.7K show clear magnetoresistance oscillations and plateaus in the quantum Hall effect confirming the existence of a two-dimensional electron gas(2DEG) and a parallel conduction through the GaAs buffer layer. The fabricated $1.5\mu\textrm{m}$gatelength p-HEMTs having p-type GaAs in the buffer layer show a high transconductance of 200 mS/mm and a good pinch-off characteristics.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.10-11
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• 2000

광통신을 이용한 근거리 전송과 장거리 전송에서 1.3 및 1.55 $mu extrm{m}$ 파장 영역의 빛이 사용되고 있다. 향후, 각 가정마다 광선로를 연결하는 Fiber-to-the-home (FTTH)의 개념과 광CATV가 발전함에 따라 1.3 및 1.55 $\mu\textrm{m}$ 빛을 검출하는 소자와 송신하는 소자가 필요하게 된다. 본 논문에서는 이러한 다중파장을 검출할 수 있는 집적소자를 제작 및 측정하였다. 본 논문에서 사용된 epitaxial layer의 구조는 N-InP 기판 위에 1 $\mu\textrm{m}$의 n-InP buffer층, 5층의InGaAs/InGaAsP 다중양자우물과 0.2 $\mu\textrm{m}$ InGaAsP separate confinement heterostructure (SCH) 층, 0.5$\mu\textrm{m}$ InP clad층과 0.1 $\mu\textrm{m}$ InGaAs cap 층으로 구성되어있다. 모든 epi 층은 InP 기판에 격자 정합이 되어있다. 다중양자우물구조는 84 $\AA$의 InGaAs 우물층과 100 $\AA$의 InGaAsP 장벽층으로 구성되며, 상온에서 0.787 eV (1.575 $\mu\textrm{m}$)의 bandgap energy를 갖도록 설계하였다. (중략)

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.637-641
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• 2006

We present the DC and RF characteristics of 100 nm gate length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistors (MHEMTs). We fabricated the T-gate with 100 nm foot print by using a positive resist ZEP520/P (MMA-MAA)/PMMA trilayer by double exposure method. The fabricated 100 nm MHEMT with a $70\;{\mu}m$ unit gate width and two fingers were characterized through do and rf measurements. The maximum drain current density of 465 mA/mm and extrinsic transconductance $(g_m)$ of 844 mS/mm were obtained with our devices. From rf measurements, we obtained the current gain cut-off frequency $(f_T)$ of 192 GHz, and maximum oscillation frequency $(f_{max})$ 310 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.2
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• pp.111-115
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• 2001

Metamorphic InAlAs/InGaAs HEMT are successfully demonstrated, exhibiting several advantages over conventional P-HEMT on GaAs and LM-HEMT on InP substrate. The strain-relaxed metamorphic structure is grown by MBE on the GaAs substrate with the inverse-step graded InAlAs metamorphic buffer. The device with 40% indium content shows the better characteristics than the device with 53% indium content. The fabricated metamorphic HEMT with $0.2\mu\textrm{m}$T-gate and 40% indium content shows the excellent DC and microwave characteristics of $V_{th}-0.65V,{\;}g_{m,max}=620{\;}mS/mm,{\;}f_T120GHZ{\;}and{\;}f_{max}=210GHZ$.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.9
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• pp.114-120
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• 1994

We have been successfully fabricated the low nois HEMT device with AlGaAs and GaAs structure. The epitazial layer with n-type AlgaAs and undoped GaAs was grown by molecular beam epitaxy(MBE) system. Ohmic resistivity of the ource and drain contact is below 5${\times}10^{6}{\Omega}{\cdot}cm^{2}$ by the rapid thermal annealing (RTA) process. The ideality factor of the Schottky gate is below 1.6 and the gate material was Ti/Pt/Au. The HEMTs with 0.25$\mu$m-long and 200$\mu$m-wide gates have exhibited a noise figure of 0.65dB with associated gain of 9dB at 12GHz, and a transconductance of 208mS/mm.

• Food Science of Animal Resources
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• v.34 no.6
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• pp.808-814
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• 2014

This study investigated the effect of gum arabic (GA) combined with microbial transglutaminase (TG) on the functional properties of porcine myofibrillar protein (MP). As an indicator of functional property, heat-set gel and emulsion characteristics of MP treated with GA and/or TG were explored under varying NaCl concentrations (0.1-0.6 M). The GA improved thermal gelling ability of MP during thermal processing and after cooling, and concomitantly added TG assisted the formation of viscoelastic MP gel formation. Meanwhile, the addition of GA decreased cooking yield of MP gel at 0.6 M NaCl concentration, and the yield was further decreased by TG addition, mainly attributed by enhancement of protein-protein interactions. Emulsion characteristics indicated that GA had emulsifying ability and the addition of GA increased the emulsification activity index (EAI) of MP-stabilized emulsion. However, GA showed a negative effect on emulsion stability, particularly great drop in the emulsion stability index (ESI) was found in GA treatment at 0.6 M NaCl. Consequently, the results indicated that GA had a potential advantage to form a viscoelastic MP gel. For the practical aspect, the application of GA in meat processing had to be limited to the purposes of texture enhancer such as restructured products, but not low-salt products and emulsion-type meat products.

• Proceedings of the KIEE Conference
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• 1999.07b
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• pp.507-509
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• 1999

In this paper, we propose a new fuzzy model identification method that can yield a successful fuzzy rule base for fundamental approximations. The method in this paper uses a set of input-output data and is based on a hybrid messy genetic algorithm (mGA) with a fine-tuning scheme. The mGA processes variable-length strings, while standard GAs work with a fixed-length coding scheme. For successfully identifying a complex nonlinear system, we first use the mGA, which coarsely optimizes the structure and the parameters of the fuzzy inference system, and then the gradient descent method which tine tunes the identified fuzzy model. In order to demonstrate the superiority and efficiency of the proposed scheme, we finally show its application to a nonlinear approximation.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.136-141
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• 1995

GaAs power MESFETs with 1 .mu.m gate length and an undoped GaAs surface layer on the doped GaAs channel are fabricated using IR(image reversal) and air-birdge processes. And then We have measured and calculated DC and RF characteristics. We have obtained saturation current 107-500 mA (197-255 mA/mm), maximum linear RF output power 111-518.8 mW (204-270 mW/mm), current gain cut-off frequency 7-10 GHz, maximum unilateral transducer power gain 5.7-12.7, and power added efficiencies 37.9-41.2 % from the devices with gate width 0.45-2.2 mm, at 6 GHz.