• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.4
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• pp.156-159
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• 2007

The red emission properties of $Mn^{4+}$ doped $SrAl_{12}O_{19}$ prepared by the solid-state reaction was investigated, in order to verify its potential to act as the red emitting phosphor of white LEDs. The emission spectrum exhibits a narrow band between $600{\sim}700 nm $ with four sharp peaks occurring at about 643, 656, 666, 671 nm due to the $^2E\to^4A_2$ transition of $Mn^{4+}$. The excitation spectrum exhibits a broad band between $200{\sim}500 nm$ with three peaks occurring at about 338, 398 and 468 nm, respectively. Moreover, the relative emission intensity of $SrAl_{12}O_{19}:Mn^{4+}$ with or without $CaF_2$ and MgO fluxes measured at excitation source 390 nm. The relative emission intensity of $SrAl_{12}O_{19}:Mn^{4+}$ containing 0.67mol% MgO was approximately 30% higher than that of the base composition sample. Strontium hexa-aluminate measured at room temperature as a function of the substituted Mg concentration. MgO was added to replace part of the $Al_2O_3$. Also, the relative emission intensity of $SrAl_{12}O_{19}:Mn^{4+}$ containing 0.67 mol% MgO and 0.67 mol% $CaF_2$ was approximately about 48% higher than that of the base composition $SrAl_{12}O_{19}:Mn^{4+}$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.285-295
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• 1999

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of their capability of multi-color emission, and low operation voltage. An approach to realize such device characteristics is to use active layers of lanthanide complexes with their inherent extremely sharp emission bands in stead of commonly known organic dyes. In general, organic molecular compounds show emission due to their $\pi$-$\pi*$ transitions resulting in luminescence bandwidths of about 80 to 100nm. Spin statistic estimations lead to an internal quantum efficiency of dye-based EL devices limited to 25%. On the contrary, the fluorescence of lanthanide complexes is based on an intramolecular energy transfer from the triplet of the organic ligand to the 4f energy states of the ion. Therefore, theoretical internal quantum efficiency is principally not limited. In this study, Powders of TPD, $Eu(TTA)_3(phen) and AlQ_3$ in a boat were subsequently heated to their sublimation temperatures to obtain the growth rates of 0.2~0.3nm/s. Organic electrolumnescent devices(OELD) with a structure of $glass substrate/ITO/Eu(TTA)_3(phen)/AI, glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AI and glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AIQ_3AI$ structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, $Eu(TTA)_3(phen)$ as an emitting material, and Tris(8-hydroxyquinoline)Aluminum$(AlQ_3)$ as an electron transporting layer. Electroluminescent(EL) and current density-voltage(J-V) characteristics of these OELDs with various thickness of $Eu(TTA)_3(phen)$ layer were investigated. The triple-layer structure devices show the red EL spectrum at the wavelength of 613nm, which is almost the same as the photoluminescent(PL) spectrum of $Eu(TTA)_3(phen)$.It was found from the J-V characteristics of these devices that the current density is not dependent on the applied field, but on the electric field.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.449-455
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• 2011

The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.4}Al_{0.6}As$ buffer layer have been investigated by using photoluminescence (PL) and time-resolved PL measurements. A 1-${\mu}m$-thick $In_{0.4}Al_{0.6}As$ buffer layers were deposited at various temperatures from $320^{\circ}C$ to $580^{\circ}C$ on a 500-nm-thick GaAs layer, and then 1-${\mu}m$-thick $In_{0.5}Al_{0.5}As$ layers were deposited at $480^{\circ}C$, followed by the deposition of the InGaAs/InAlAs MQWs. In order to study the effects of $In_{0.4}Al_{0.6}As$ layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of $In_{0.4}Al_{0.6}As$ buffer layer. The MQWs consist of three $In_{0.5}Al_{0.5}As$ wells with different well thicknesses (2.5-nm, 4.0-nm, and 6.0-nm-thick) and 10-nm-thick $In_{0.5}Al_{0.5}As$ barriers. The PL peaks from 4-nm QW and 6-nm QW were observed. However, for the MQWs on the $In_{0.4}Al_{0.6}As$ layer grown by using the largest growth temperature variation (320-$580^{\circ}C$), the PL spectrum only showed a PL peak from 6-nm QW. The carrier decay times in the 4-nm QW and 6-nm QW were measured from the emission wavelength dependence of PL decay. These results indicated that the growth temperatures of $In_{0.4}Al_{0.6}As$ layer affect the optical properties of the MQWs.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.250-254
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• 2011

We have synthesized bluish-green, highly-efficient $BaSi_2O_2N_2:Eu^{2+}$ and $(Ba,Sr)Si_2O_2N_2:Eu^{2+}$ phosphors through a conventional solid state reaction method using metal carbonate, $Si_3N_4$, and $Eu_2O_3$ as raw materials. The X-ray diffraction (XRD) pattern of these phosphors revealed that a $BaSi_2O_2N_2$ single phase was obtained. The excitation and emission spectra showed typical broadband excitation and emission resulting from the 5d to 4f transition of $Eu^{2+}$. These phosphors absorb blue light at around 450 nm and emit bluish-green luminescence, with a peak wavelength at around 495 nm. From the results of an experiment involving Eu concentration quenching, the relative PL intensity was reduced dramatically for Eu = 0.033. A small substitution of Sr in place of Ba increased the relative emission intensity of the phosphor. We prepared several white LEDs through a combination of $BaSi_2O_2N_2:Eu^{2+}$, YAG:$Ce^{3+}$, and silicone resin with a blue InGaN-based LED. In the case of only the YAG:$Ce^{3+}$-converted LED, the color rendering index was 73.4 and the efficiency was 127 lm/W. In contrast, in the YAG:$Ce^{3+}$ and $BaSi_2O_2N_2:Eu^{2+}$-converted LED, two distinct emission bands from InGaN (450 nm) and the two phosphors (475-750 nm) are observed, and combine to give a spectrum that appears white to the naked eye. The range of the color rendering index and the efficiency were 79.7-81.2 and 117-128 lm/W, respectively. The increased values of the color rendering index indicate that the two phosphor-converted LEDs have improved bluish-green emission compared to the YAG:Ce-converted LED. As such, the $BaSi_2O_2N_2:Eu^{2+}$ phosphor is applicable to white high-rendered LEDs for solid state lighting.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.1
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• pp.15-18
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• 2009

To enhance near UV-visible absorption region and to applied phosphor convert-white LEOs (PC-WLEDs), a red phosphor composed of ${Y_2}{SiO_5}:\;EU^{3+}$, $Bi^{3+}$ compounds was prepared by the conventional solid-state reaction. The photoluminescence (PL) shown that samples were excited by near UV light 395 nm for measurement of PL spectra. Emission spectra of samples have shown red emissions at 612 nm ($^5D_0{\to}^7F_2$). The enhanced near $UV{\sim}$ visible excitation spectrum with a broad band centered at 258 nm and 282 nm originated in the transitions toward the charge transfer state (CTS) due to the $Eu^{3+}-Bi^{3+}-O^{2-}$ interaction. The other excitation band at $350\;nm{\sim}480\;nm$, corresponding to the transitions $^7F_0{\to}^5L_9$ (364 nm), $^7F_0{\to}^5G_3$ (381 nm), $^7F_0{\to}^5L_6$ (395 nm), $^7F_0{\to}^5D_3$, (415 nm) and $^7F_0{\to}^5D_2$ (466 nm), occurred due to enhanced the f-f transition increasing $Bi^{3+}$ and $Eu^{3+}$ ions. The PL intensity increased with increased as concentration of $Bi^{3+}$ and the emission intensity becomes with a maximum at 0.125 mol.

• Journal of Korean Ophthalmic Optics Society
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• v.6 no.1
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• pp.149-153
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• 2001

Three-dimensional thermoluminescence(TL) spectra of LiF: Mg, Cu, Na, Si TL material based on temperature, wavelength and intensity were measured and analyzed. The glow curves were obtained by integration of luminescence intensity for wavelength at each temperature, and various trapping parameters related to the trap formation were determined by analyzing these curves. Computerized glow curve deconvolution(CGCD) method which based on general order kinetics(GOK) model were used for the glow curve analysis. The glow curves of LiF:Mg, Cu, Na, Si TL material were deconvoluted to six isolated glow curves which have peak temperature at 333 K, 374 K, 426 K, 466 K, 483 K and 516 K, respectively. The 466 K main glow peak had an activation energy of 2.06 eV and a kinetic order of 1.05. This TL material was also found to have three recombination centers, 1.80 eV, 2.88 eV and 3.27 eV by TL spectra analysis based on Franck-Condon model. It showed that 2.88 eV is the dominant center, followed by 3.27 eV level, and 1.80 eV center is ascertained as emission center of this material even though its very weak emission intensity.

• Journal of Radiation Protection and Research
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• v.38 no.1
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• pp.37-43
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• 2013

In case of neutron dose measurement using TLDs (thermo-luminescence dosimeters), because the neutron energy dependence of the TLD is very high, the calibration of the energy response according to the characteristics of the neutron spectrum of workplace is required. In the present study, the ambient dose equivalent rates inside and around the Long-Counter (neutron detector) with narrow and complex inside in the neutron field of $^{252}Cf$ were evaluated. The calibration factors to account for the neutron energy dependence of TLDs were established for both the bare and $D_2O$ modulated $^{252}Cf$ neutron beams, respectively. The values of the TLD's measurement were compared with the computational results of the MCNPX (Monte Carlo N-Particles transport code). When using the two calibration factors of the TLD than a single calibration factor, the measured and the calculated values at the point of verification outside and inside the Long-Counter were in more good agreement. This results show that TLD should be calibrated in the reference neutron field similar to workplace situation.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.