• 환경영향평가
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• 제14권6호
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• pp.377-385
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• 2005

The Eurasian otter(Lutra lutra) is listed as No. 330 in natural monument. To manage and conserve habitat for otters, it is critical to understand which habitat components are important for otters. The objectives of this study were to analyze otter habitat characteristics in accordance with land-cover map. We investigated otter spraints and sprainting site in Geoje Island from January to December, 2004. with GPS coordinates. The analysis of otter habitat use pattern was used by Arcview ver. 3.2 with 1: 25,000 Topology Map and field data. Otter habitat use was strongly related to sites in riparian vegetation riparian(dam or river) structures. In this study, Gucheon was a site with high coverage of riparian vegetation and unconfined channels, thus recording higher number of spraint densities than those of Yeonchocheon. Yeonchocheon was under construction at lower stream areas so that otter habitat use was limited. This study suggests that securing suitable forests and riparian vegetation zone is essential for conservation of otters.

• 한국결정성장학회지
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• 제8권2호
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• pp.255-262
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• 1998

재래식 열원과 마이크로파 열원에 의해 열처리된 봉착용 무정형재료의 결정화 거동을 비교 검토하였다. X-선 회절분석과 SEM 분석의 결과로부터 마이크로파 열원에 의해 열처리된 시편은 짧은 열처리 시간과 낮은 열처리 온도에도 불구하고 재래식 열원에 의해 열처리된 시편에 비하여 $PbTiO_3$ 결정이 잘 성장하였고 높은 결정화도를 보여주었다. 마이크로파가 $PbTiO_3$ 결정의 핵 생성 단계에서는 핵 생성을 억제하지만,$PbTiO_3$결정의 핵 생성이 활발하여 임계 크기 이상으로 $PbTiO_3$결정이 성장하면 시편내의 이온들에게 향상된 확산 효과를 제공하여 $PbTiO_3$ 결정의 성장을 돕는다고 사료된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.67-73
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• 2002

The development of high performance HTS wire is a key factor for various electrical applications of coils and cables. The purpose of this paper is to review and consider the main manufacturing technologies of HTS wire and its current status. A lot of efforts have been focused on the optimization of PIT parameters for Bi-2223/Ag wire. According to this, long Bi-2223 wires having Ic of 130 A were recently produced and their mass production has been underway in US. The current status performance of Bi-2223 wire is supposed to be used in power transmission cable because of its lower self-field property. Y-123 second generation conductor is extensively being developed throughout the world and many fabrication processes are competed with each other. 30 m-long Y-123 wire with Ic of 0.8 MA/$\textrm{cm}^2$ was recently fabricated using IBAD and PLD techniques in Japan. This result offers promise of scalable processing of practical multi-layer coated conductor.

• Journal of Mechanical Science and Technology
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• 제19권5호
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• pp.1169-1181
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• 2005

Experimental and numerical studies on the unsteady wake field behind a square cylinder near a wall were conducted to find out how the vortex shedding mechanism is correlated with gap flow. The computations were performed by solving unsteady 2-D Incompressible Reynolds Averaged Navier-Stokes equations with a newly developed ${\epsilon}-SST$ turbulence model for more accurate prediction of large separated flows. Through spectral analysis and the smoke wire flow visualization, it was discovered that velocity profiles in a gap region have strong influences on the formation of vortex shedding behind a square cylinder near a wall. From these results, Strouhal number distributions could be found, where the transition region of the Strouhal number was at $G/D=0.5{\sim}0.7$ above the critical gap height. The primary and minor shedding frequencies measured in this region were affected by the interaction between the upper and the lower separated shear layer, and minor shedding frequency was due to the separation bubble on the wall. It was also observed that the position (y/G) and the magnitude of maximum average velocity $(u/u_{\infty})$ in the gap region affect the regular vortex shedding as the gap height increases.

• 한국전기전자재료학회논문지
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• 제26권11호
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• pp.785-789
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• 2013

Silicon Carbide (SiC) is the material with the wide band-gap (3.26 eV), high critical electric field (~2.3 MV/cm), and high bulk electron mobility (~900 $cm^2/Vs$). These electronic properties allow attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. In general, device design has a significant effect on the switching and electrical characteristics. It is known that in this paper, we demonstrated that the switching performance and breakdown voltage of IGBT is dependent with doping concentration of p-base region and drift layer by using 2-D simulations. As a result, electrical characteristics of SiC-IGBT deivce is higher breakdown voltage ($V_B$= 1,600 V), lower on-resistance ($R_{on}$= 0.43 $m{\Omega}{\cdot}cm^2$) than Si-IGBT. Also, we determined that processing time and cost is reduced by the depth of n-drift region of IGBT was reduced.

• ETRI Journal
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• 제38권1호
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• pp.133-140
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• 2016

This paper presents a method of parasitic inductance reduction for high-speed switching and high-efficiency operation of a cascode structure with a low-voltage enhancement-mode silicon (Si) metal-oxide-semiconductor field-effect transistor (MOSFET) and a high-voltage depletion-mode gallium nitride (GaN) fielde-ffect transistor (FET). The method is proposed to add a bonding wire interconnected between the source electrode of the Si MOSFET and the gate electrode of the GaN FET in a conventional cascode structure package to reduce the most critical inductance, which provides the major switching loss for a high switching speed and high efficiency. From the measured results of the proposed and conventional GaN cascode FETs, the rising and falling times of the proposed GaN cascode FET were up to 3.4% and 8.0% faster than those of the conventional GaN cascode FET, respectively, under measurement conditions of 30 V and 5 A. During the rising and falling times, the energy losses of the proposed GaN cascode FET were up to 0.3% and 6.7% lower than those of the conventional GaN cascode FET, respectively.

• Journal of Magnetics
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• 제22권1호
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• pp.133-140
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• 2017

Split magnetic fluid sealing is a combination of magnetic fluid rotary and plane sealing. Using the theory of equivalent magnetic circuit design as basis, the author theorized the pressure resistance performance of magnetic fluid plane sealing. To determine the pressure resistance of magnetic fluid plane sealing, the author adopted the method of finite element analysis to calculate the magnetic field intensity in the gap between plane sealing structures. The author also analyzed the effect of different sealing gaps, as well as different ratios between the sealing gap and tooth and solt width, on the sealing performance of split magnetic fluid. Results showed that the wider the sealing gap, the lower the sealing performance. Tooth width strongly affects sealing performance; the sealing performance is best when the ratio between tooth width and sealing gap is 2, whereas the sealing performance is poor when the ratio is over 8. The sealing performance is best when the ratio between the solt width and sealing gap is 4, indicating a slight effect on sealing performance when the ratio between the solt width and sealing gap is higher. Theoretical analysis and simulation results provide reference for the performance evaluation of different sealing equipment and estimation of critical pressure at interface failure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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• pp.107-108
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• 2006

High $J_c$ $YBa_2Cu_3O_x$, superconducting films were fabricated by MOD method using fluorine-free dichloroacetic acid(DCA) as chelating solvent for preparing precursor solution. DCA-MOD precursor solution was coated on a single crystal (001) $LaAlO_3$(LAO) substrate by a dip coating method with a speed of 25 mm/min. Coated films were calcined at lower temperature up to $500^{\circ}C$ and Conversion heat treatment was performed at various temperatures of $780{\sim}810^{\circ}C$. SEM observations showed that films have very dense microstructures for the films prepared at the temperature higher than $800^{\circ}C$ regardless of diluting solvent; methanol or 2-methoxyethanol. A High critical current density ($J_c$) of 1.28 $MA/cm^2$ (@77 K and self-field) was obtained for the YBCO film prepared using 2-methoxyethanol as a solvent.

• 한국도로학회논문집
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• 제15권1호
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• pp.103-110
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• 2013

PURPOSES: The objective of this study is to analyze and evaluate the behavior of orthotropic steel bridge deck pavement using three-dimensional finite element analysis and full-scale wheel load testing. METHODS: Since the layer thickness and material properties used in the bridge deck pavement are different from its condition, it is very difficult to measure and access the behavior of bridge deck pavement in the field. To solve this problem, the full-scale wheel load testing was conducted on the PSMA/Mastic bridge deck pavement and the deflection of bridge deck and horizontal tensile strain on top of pavement were measured under the loading condition. Three-dimensional finite element analysis was conducted to predict the behavior of bridge deck pavement and the predicted deflection and tensile strain values are compared with measured values from the wheel loading testing. RESULTS: Test results showed that the predicted deflections are 10% lower than measured ones and the error between predicted and measured horizontal tensile strain values is less than 2% in the critical location. CONCLUSIONS: The fact indicates that the proposed the analysis is found to be accurate for estimating the behavior of bridge deck pavements.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.210-210
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• 2000

Vertically well aligned multi-wall carbon nanotubes (CNT) were grown on nickel coated glass substrates by plasma enhanced hot filament chemical vapor deposition at low temperatures below 600$^{\circ}C$. Acetylene and ammonia gas were used as the carbon source and a catalyst. Effects of growth parameters such as pre-treatment of substrate, plasma intensity, filament current, imput gas flow rate, gas composition, substrate temperature and different substrates on the growth characteristics of CNT were systematically investigated. Figure 1 shows SEM image of CNT grown on Ni coated glass substrate. Diameter of nanotube was 30 to 100nm depending on the growth condition. The diameter of CNT decreased and density of CNT increased as NH3 etching time etching time increased. Plasma intensity was found to be the most critical parameter to determine the growth of CNT. CNT was not grown at the plasma intensity lower than 500V. Growth of CNT without filament current was observed. Raman spectroscopy showed the C-C tangential stretching mode at 1592 cm1 as well as D line at 1366 cm-1. From the microanalysis using HRTEM, nickel cap was observed on the top of the grown CNT and very thin carbon amorphous layer of 5nm was found on the nickel cap. Current-voltage characteristics using STM showed about 34nA of current at the applied voltage of 1 volt. Electron emission from the vertically well aligned CNT was obtained using phosphor anode with onset electric field of 1.5C/um.