• Proceedings of the KIPE Conference
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• 2003.07a
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• pp.317-322
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• 2003

A novel three-level DC/DC converter (TLC)for high power applications operating from high input voltage Is proposed. Its switch voltage stress can be ensured to be only one-half of the Input voltage. Nevertheless, since all input voltage is applied to the transformer primary side, it has good turns ratio. The driving method of each module is same as those of the conventional phase-shifted ZVS full bridge PWM converter (PSFB) and the zero-voltage-switching (ZVS) of the leading leg are achieved exactly in the same manner as that of the PSFB. Moreover, its three-level operation can considerably reduce the current ripple through the output inductor and it has no problems of the DC-link voltage unbalance. Therefore, it features a low voltage stress, high efficiency, low EMI, high power density, and small sized filter. To confirm the operation, validity, and features of the proposed circuit, experimental results from a 200W, 600V/DC-48V/DC prototype are presented.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.15 no.5
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• pp.335-342
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• 2022

In this paper, a single-bit 3rd-order feedforward delta sigma modulator is proposed for audio applications. The proposed modulator is based on a class-C inverter for low voltage and power applications. For the high-precision requirement, the class-C inverter with regulated cascode structure increases its DC gain and acts as a low-voltage subthreshold amplifier. The proposed Class-C inverter-based modulator is designed and simulated in 180-nm CMOS process. With no performance loss and a low supply voltage compatibility, the proposed class-C inverter-based switched-capacitor modulator achieves high power efficiency. This design achieves an signal-to-noise-and-distortion ratio (SNDR) of 93.9 dB, an signal-to-noise ratio (SNR) of 108 dB, an spurious-free dynamic range (SFDR) of 102 dB, and a dynamic range (DR) of 102 dB at a signal bandwidth of 20 kHz and a sampling frequency of 4 MHz, while only using 280 μW of power consumption from a 0.8-V power supply.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.2
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• pp.53-57
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• 2017

This paper proposes a 401MHz-406MHz low noise amplifier for MedRadio applications. The proposed low noise amplifier adopts a common gate amplifier topology using current reuse gm-boosting technique. The proposed low noise amplifier shows better performance of voltage gain and noise figure than the conventional gm-boosted common gate amplifier in the same power consumption. The proposed current-reuse gm-boosted low noise amplifier achieves a voltage gain of 22 dB, a noise figure of 2.95 dB, and IIP3 of -17 dBm while consuming $170{\mu}W$ from a 0.5 V supply voltage in $0.13{\mu}m$ CMOS process.

• Journal of Power Electronics
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• v.18 no.1
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• pp.11-22
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• 2018

This paper presents a single switch, high step-up, non-isolated dc-dc converter suitable for renewable energy applications. The proposed converter is composed of a coupled inductor, a passive clamp circuit, a switched capacitor and voltage lift circuits. The passive clamp recovers the leakage inductance energy of the coupled inductor and limits the voltage spike on the switch. The configuration of the passive clamp and switched capacitor circuit increases the voltage gain. A wide continuous conduction mode (CCM) operation range, a low turn ratio for the coupled inductor, low voltage stress on the switch, switch turn on under almost zero current switching (ZCS), low voltage stress on the diodes, leakage inductance energy recovery, high efficiency and a high voltage gain without a large duty cycle are the benefits of this converter. The steady state operation of the converter in the continuous conduction mode (CCM) and discontinuous conduction mode (DCM) is discussed and analyzed. A 200W prototype converter with a 28V input and a 380V output voltage is implemented and tested to verify the theoretical analysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.63-66
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• 2017

This research was about shielded trench gate power MOSFET for low voltage and high speed. We used T-CAD tool and carried out process and device simulation for exracting design and process parameters. The exracted parameters was used to design shieled and conventional trench gate power MOSFET. And The electrical characteristics of shieled and conventional trench gate power MOSFET were compared and analyzed for their power device applications. As a result of analyzing electrical characteristics, the recorded breakdown voltages of both devices were around 120 V. The electric distributions of shielded and conventional trench gate power MOSFET was different. But due to the low voltage level, the breakdown voltage was almost same. And the other hand, the threshold voltage characteristics of shielded trench gate power MOSFET was superior to convention trench gate power MOSFET. In terms of on resistance characteristics, we obtained optimal oxied thickness of $3{\mu}m$.

• Proceedings of the IEEK Conference
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• summer
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• pp.221-224
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• 2004

This paper proposed an ultra low-power CMOS exponential voltage-mode circuit using the Pseudo-exponential function for realizing the exponential characteristics. The proposed circuit provides high dB-linear output voltage range at low-voltage applications. In a $0.25\;\mu m$ CMOS process, the simulations show more than 35 dB output voltage range and 26 dB with the linearity error less than $\pm0.5\;dB.$ The average current consumption is less than 80 uA. The proposed circuit can be used for the design of an extremely low-power variable gain amplifier (VGA) and automatic gain control (AGC).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.498-498
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• 2013

Atmospheric Pressure Plasmas have pioneered a new field of plasma for biomedical application bridging plasma physics and biology. Biological and medical applications of plasmas have attracted considerable attention due to promising applications in medicine such as electro-surgery, dentistry, skin care and sterilization of heat-sensitive medical instruments [1]. Traditional approaches using electronic devices have limits in heating, high voltage shock, and high current shock for patients. It is a great demand for plasma medical industrial acceptance that the plasma generation device should be compact, inexpensive, and safe for patients. Microwave-excited micro-plasma has the highest feasibility compared with other types of plasma sources since it has the advantages of low power, low voltage, safety from high-voltage shock, electromagnetic compatibility, and long lifetime due to the low energy of striking ions [2]. Recent experiment [2] shows three-log reduction within 180-s treatment of S. mutans with a low-power palm-size microwave power module for biomedical application. Experiments using microwave plasma are discussed. This low-power palm-size microwave power module board includes a power amplifier (PA) chip, a phase locked loop (PLL) chip, and an impedance matching network. As it has been a success, more compact-size module is needed for the portability of microwave devices and for the various medical applications of microwave plasma source. For the plasma generator, a 1.35-GHz coaxial transmission line resonator (CTLR) [3] is used. The way of reducing the size and enhancing the performances of the module is examined.

• ETRI Journal
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• v.20 no.1
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• pp.37-45
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• 1998

Reduced surface field lateral double-diffused MOS transistor for the driving circuits of plasma display panel and field emission display in the 120V region have been integrated for the first time into a low-voltage $1.2{\mu}m$ analog CMOS process using p-type bulk silicon. This method of integration provides an excellent way of achieving both high power and low voltage functions on the same chip; it reduces the number of mask layers double-diffused MOS transistor with a drift length of $6.0{\mu}m$ and a breakdown voltage greater than 150V was self-isolated to the low voltage CMOS ICs. The measured specific on-resistance of the lateral double-diffused MOS in $4.8m{\Omega}{\cdot}cm^2$ at a gate voltage of 5V.

• KIEE International Transactions on Electrophysics and Applications
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• v.2C no.6
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• pp.292-296
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• 2002

A new sustain driving method for the AC PDP is presented. In this driving method, the voltage source is connected to a storage capacitor, this storage capacitor charges an intermediate capacitor through LC resonance, and the panel is charged from the intermediate capacitor indirectly. In this way, the current flowing into the AC PDP when the sustain discharge occurs is reduced because the current is indirectly supplied from a capacitor, a limited source of charge. Thus, the input power to the output luminance efficiency is improved. Since the voltage supplied to the storage capacitor is doubled through LC resonance, this method call drive an AC PDP with a voltage source of about half of the voltage necessary in the conventional driving methods. The experiments showed that this charge-controlled driving method could drive ail AC PDP with a voltage source of as low as 107V. Using a panel of the conventional structure, luminous efficiency of 1.28 lm/W was achieved.

• Journal of Power Electronics
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• v.16 no.1
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• pp.277-286
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• 2016

This paper offers two Maximum Power Point Tracking (MPPT) systems for Photovoltaic (PV) applications. The first MPPT method is based on a fixed frequency Model Predictive Control (MPC). The second MPPT technique is based on the Predictive Hysteresis Control (PHC). An experimental demonstration shows that the proposed techniques are fast, accurate and robust in tracking the maximum power under different environmental conditions. A DC/DC converter with a high voltage gain is obligatory to track PV applications at the maximum power and to boost a low voltage to a higher voltage level. For this purpose, a high gain Switched Inductor Quadratic Boost Converter (SIQBC) for PV applications is presented in this paper. The proposed converter has a higher gain than the other transformerless topologies in the literature. It is shown that at a high gain the proposed SIQBC has moderate efficiency.