• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1482-1484
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• 2002

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCI (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures $({\leq}300^{\circ}C)$, the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• 한국표면공학회지
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• 제23권1호
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• pp.34-43
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• 1990

Al-Si piston alloys such as AlS10CuMg have been anodized to examine apossibility of forming a hard film aat relatively higher temperatures compard with those in conventional sulfuric acid processes. Three types of electrolytes have been employed in this study ; electrolyte A(15% H2SO4, $0^{\circ}C$), electrolyte B(12% H2SO4, 1% oxalic, $10^{\circ}C$), electrolyte C(tartaric acid 125g/L+oxalic 75g/L+aluminum sulfate 225g/L, $25^{\circ}C$). Hard anodisine process in electrolyte B at a current density of 1.54A/dm2 produced a harder film of VHN 396 at a relatibely low film forming voltage compared with those obtained in other electrolyte at equivalent current density. A liner relationship between hardness and abrasion resistance exists for Al-Si piston alloys. The hardness of anodized film decreasees with increasing silicon content in Al-Si alloys and also with bath temperature. The film hardeness of Na-modified alloy os higher than that of P-modified alloy due to its finer microstructre. The film on the silicon phase in Al-Si alloys is observed to be formed by lateral growth of oxide film nucleated at surroundings.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.108-108
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• 2011

Organometallic complexes containing unpaired spins, such as metalloporphyrin or metallophthalocyanine, have extensively studied with increasing interests of their promising model systems in spintronic applications. Additionally, the use of these complexes as an acceptor molecule in chemical sensors has recently received great attentions. In this presentation, we have investigated adsorption of nitric oxide (NO) molecules at Co-porphyrin molecules on Au(111) surfaces with scanning tunneling microscopy and spectroscopy at low temperature. At the location of Co atom in Co-porphyrin molecules, we could observe a Kondo resonance state near Fermi energy in density of states (DOS) before exposing NO molecules and the Kondo resonance state was disappeared after NO exposing because the electronic spin structure of Co-porphyrin were modified by forming a cobalt-NO bonding. Furthermore, we could locally control the chemical reaction of NO dissociations from NO-CoTPP by electron injections via STM probe. After dissociation of NO molecules, the Kondo resonance state was recovered in density of state. With a help of density functional theory (DFT) calculations, we could understand that the modified electronic structures for NO-Co-porphyrin could be occurred by metal-ligand hybridization and the dissociation mechanisms of NO can be explained in terms of the resonant tunneling process via molecular orbitals.

• 센서학회지
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• 제5권1호
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• pp.37-42
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• 1996

기존의 진공증착 방법으로 $SiO_{2}$ 막이 성장된 Si웨이퍼 위에 ZnO막을 제조하였다. Anhydrous zinc acetate를 자체 제작한 황동보트안에 넣고 가열하여 승화시켰다. 기판온도는 $200^{\circ}C$에서 $600^{\circ}C$까지 변화시켰으며 공정중에 산소를 주입하여 챔버내 산소 분압을 증가시켰다. 증가된 산소분압에 의해 고저항의 ZnO막을 얻을 수 있었다. 제조된 막의 결정성 및 성분을 알기 위해 XRD, EDS 및 RBS 측정을 하였다. 고저항의 ZnO막은 70%이상의 상대습도에 매우 민감한 저항감소를 나타내었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.181-182
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• 2000

The glass compositions of $PbO-SiO_2-B_2O_3$ system and $P_2O_5-PbO-ZnO$ system for the transparent dielectric materials for front panel and $P_2O_5-ZnO-BaO$ and $SiO_2-ZnO-B_2O_3$ for the reflective dielectric materials for back panel of PDP(Plasma Display Panel) were investigated. As a transparent dielectric materials for front panel, $PbO-SiO_2-B_2O_3$ glass showed good dielectric properties, high transparency and proper thermal expansion matching to soda-lime glass substrate. And the reflective dielectric materials for back panel were prepared from parent glass of $SiO_2-ZnO-B_2O_3$ system and oxide filler. It was found that these glass-ceramics are useful materials for reflective dielectric layers, as those have a similar thermal expansion to soda-lime glass plate, high reflectance, low sintering temperature.

• 한국전기전자재료학회논문지
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• 제19권11호
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• pp.1037-1043
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• 2006

We report the enhancement of hole injection using ozone-treated Ag nanodots dispersed on indium tin oxide anode in $Ir(ppy)_3-doped$ phosphorescent OLED. Phosphorescent OLED fabricated on Ag nanodots dispersed ITO anode showed a lower turn on voltage and higher luminescence than those of OLEDS prepared commercial ITO anode. Synchrotron x-ray scattering examination results showed that the Ag nanodots dispersed on ITO anode is amorphous structure due to low deposition temperature. It was thought that decrease of the energy barrier height as Ag nanodots changed to $AgO_x$ nanodots by surface treatment using ozone for 10 min led to enhancement of hole injection in phosphorescent OLED. Futhermore, efficient hole injection can be explained by increase of contact region between anode material and organic material through introduction of $Ag_2O$ nanodots.

• 한국세라믹학회지
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• 제42권12호
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• pp.821-826
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• 2005

Gadolinia-doped ceria nanopowder was prepared by glycine-nitrate combustion method with different glycine/nitrate mixing ratio. The characteristics of the synthesized powder were investigated by X-ray diffraction method, transmission electron microscopy, thermal gravity, differential thermal analysis and thermo-mechanical analysis. The smallest powder was obtained with glycine/nitrate ratio 1.00 and the lowest organic and water vapor contained powder was made with glycine/nitrate ratio 1.75. According to dilatometry, fast densification was occurred around $1000^{\circ}C$ and shows full density over $1300^{\circ}C$. Finally near-fully dense ceria electrolyte was fabricated with conventional sintering technique. Glycine-nitrate process yields fine nanopowders which enable low temperature sintering and fabrication of fully dense and nanostructured oxide electrolyte.

• 한국광학회지
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• 제22권2호
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• pp.90-95
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• 2011

본 논문에서는 액정 디스플레이의 구현에 있어서 필수적인 필름인 편광판에 ITO를 증착하여 기존 액정 디스플레이에서 두께의 대부분을 차지하는 유리기판을 제거함으로써 경략 박형 액정 셀을 구현하였다. 저온($40^{\circ}C$)에서 편광판에 sputtering으로 buffer layer와 ITO를 증착하여 높은 투과율과 낮은 비저항 및 편평도를 확보하였다. 최종적으로 저온공정이 가능한 ion-beam 배향법을 이용하여 액정을 배향하고 액정 셀을 제작하고 전기광학특성을 확인하였다.

• 한국재료학회지
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• 제19권5호
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• pp.259-264
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• 2009

In this study we investigated the effect of the multi-step texturing process on the electrical and optical properties of hydrogenated Al-doped zinc oxide (HAZO) thin films deposited by rf magnetron sputtering. AZO films on glass were prepared by changing the $H_2/(Ar+H_2)$ ratio at a low temperature of $150^{\circ}C$. The prepared HAZO films showed lower resistivity and higher carrier concentration and mobility than those of non-hydrogenated AZO films. After deposition, the surface of the HAZO films was multi-step textured in diluted HCl (0.5%) for the investigation of the change in the optical properties and the surface morphology due to etching. As a result, the HAZO film fabricated under the type III condition showed excellent optical properties with a haze value of 52.3%.

• Bulletin of the Korean Chemical Society
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• 제35권2호
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• pp.605-609
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• 2014

Magnetic multi-granule nanoclusters (MGNCs) were investigated as an inexpensive means to effectively remove arsenic from aqueous environment, particularly groundwater sources consumed by humans. Various size MGNCs were examined to determine both their capacity and efficiency for arsenic adsorption for different initial arsenic concentrations. The MGNCs showed highly efficient arsenic adsorption characteristics, thereby meeting the allowable safety limit of $10{\mu}g/L$ (ppb), prescribed by the World Health Organization (WHO), and confirming that 0.4 g and 0.6 g of MGNCs were sufficient to remove 0.5 mg/L and 1.0 mg/L of arsenate ($AsO_4{^{3-}}$) from water, respectively. Adsorption isotherm models for the MGNCs were used to estimate the adsorption parameters. They showed similar parameters for both the Langmuir and Sips models, confirming that the adsorption process in this work was active at a region of low arsenic concentration. The actual efficiency of arsenate removal was then tested against 1 L of artificial arsenic-contaminated groundwater with an arsenic concentration of 0.6 mg/L in the presence of competing ions. In this case, only 1.0 g of 100 nm MGNCs was sufficient to reduce the arsenic concentrations to below the WHO permissible safety limit for drinking water, without adjusting the pH or temperature, which is highly advantageous for practical field applications.