• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.510-515
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• 1999

Synthesize of anatase type $TiO_2$ from $TiCl_4$ solution was studied. KOH was used on dehydration reaction of $TiCl_4$ solution. Products of dehydration reaction was calcined at 300, 500, 700, 900, $1000^{\circ}C$ during 1hour. Calcined products was studied by XRD, DTA, and FT-IR for effect of calcined temperature. The results are as follow. \circled1 Product pf dehydration reaction at$ 90^{\circ}C$ was semicrystalline anatase type $TiO_2$ because it has a peak vary broad and low at the position of anatase crysral XRD pattern. \circled2 Pure titanium oxide semi-crystalline products were produced at acid pH condition which convert to anatase crystal at $300^{\circ}C$ and to rutile crystal at $700^{\circ}C$. \circled3 The chemical composition of semicrystalline products which was produce at alkali pH conditions, were potasium titante. Potasium-titanate semi-crystalline products crystallized at 630~$640^{\circ}C$ \circled4 The transition temperature of potassium dopped titanium oxide semi-crystalline products was increased with the contents of potasium. \circled5 The optimum synthesise condition of anatase $TiO_2$ products from $TiCl_4$ and KOH are pH 3~5 and $300^{\circ}C$ calcination.

• Korean Journal of Materials Research
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• v.7 no.3
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• pp.196-202
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• 1997

Perovskite lanthanum doped lead titanate ($(Pb,La)TiO_{3}$ or PLT) thin films were successfully fabricated on Pt/TijSiO.iSi substrates at the temperatures as low as $440~500^{\circ}C$ by eleclron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR PECVII). Since the volatilities of the MC sources arid oxide molecules (especially Ph oxide) increased with increasing deposition temperature, the film deposition rate and the (I'b + La)/'Ti ratio decreased Stoichiometric perovskite PL'T films with good dielectric and leakeage current properties were obtained at the temperatures of $460~480^{\circ}C$. The lanthanum content of the film was nearly directly propotional to $La(DPM)_{3}$ flow rate. As the La/Ti ratio increased from 3.0 to 9.5%, the dielectric constant increased from 360 to 650 and the leakeage current density at 100kV/cm electric field decreased from $4{\times}10^{-5}$ to $4{\times}10_{-8}A/cm^2$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.6 no.6
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• pp.457-460
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• 2005

Nano-sized titanium oxide and zirconium oxide powders were synthesized by hydrolysis of titanium isopropoxide $[Ti(OC_3H7)_4]$ and zirconium tetrachloride ($ZrC1_4$) via a sol-gel technique. Lead titanate powders were prepared by mixing $TiO_2$ precursors with PbO slurry made with dilute $NH_4OH$. Lead zirconate titanate powders were, then, synthesized by mixing $PbTiO_3$ with $ZrO_2$ powders. The goal of this research was to obtain the $PbZrTiO_3(PZT)$ powders and sintering these powders at low temperature. The $PbTiO_3$ and PZT powders after firing were analyzed by X-ray diffraction(XRD) and transmission electron microscopy(TEM) was utilized to observe the shape and size of the synthesized nano-particles. In the XRD pattern, the well-crystallized PZT phase could be obtained in consequence of firing at $900^{\circ}C$. SEM micrographs also showed that grains of PZT were relatively well grown with the size of the range of $2{\~}4{\mu}m$. The densified perovskite structure of $PbZrTiO_3$ could be obtained by sintering at temperature as low as $900^{\circ}C$. Characterization of the samples showed improved piezoelectric properties.

• Journal of the Korean Electrochemical Society
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• v.8 no.2
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• pp.88-93
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• 2005

Anode-supported solid oxide fuel cell (SOFC) was investigated to increase the cell power density at intermediate temperature through control of the cathode structure. The anode-supported SOFC cell were fabricated by wet process, in which the electrolyte of $8mol\%\;Y_2O_3-stabilized\;ZrO_2 (YSZ)$ was coated on the surface of anode support of Ni/YSA and then the cathode was coated. The cathode has two- or three- layered structure composed of $(La_{0.85}Sr_{0.15})_{0.9}MnO_{3-x}(LSM),\;LSM/YS$ composite (LY), and $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_3{LSCF)$ with different thickness. Their single cells with different cathode structures were characterized by measuring the cell performance and ac impedance in the temperature range of 600 to $800^{\circ}C$ in humidified hydrogen with $3\%$ water and air. The cell with $LY\;9{\mu}m/LSM\;9{\mu}m/LSCF\;17{\mu}m$ showed best performance of $590mW/cm^2$, which was attributed to low polarization resistance due to LY and to low interfacial resistance due to LSCF.

• Polymer(Korea)
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• v.39 no.2
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• pp.338-345
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• 2015

Poly(phenylene oxide) (PPO) and polyether imide (PEI) were sulfonated and aminated to create sulfonated poly(phenylene oxide) (SPPO) and aminated polyether imide (APEI), respectively. Characterization of the SPPO and APEI were performed via measurements of FTIR, thermogravimetry (TGA), swelling degree, ion exchange capacity (IEC), and ion conductivity. Next, the surfaces of these membranes were modified by surface fluorination at room temperature. The surface fluorinated SPPO and APEI membranes underwent characterization again for the mentioned measurements to determine any differences. The 3 types of bi-polar membranes were prepared by varying the IEC of the APEI at a fixed SPPO IEC value, which were applied to the low and high NaCl concentration of feed solution at the different current density, respectively. The hypochlorite concentration derived from the surface fluorinated membranes was dependent on the IEC of the APEI and ranged from 491 to 692 ppm at $80mA/m^2$. At low current density of $5mA/m^2$, the hypochlorite concentrations ranged from 18 to 28 ppm for the 4 hrs surface fluorinated membranes and their durability increased greatly.

• Korean Journal of Materials Research
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• v.22 no.10
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• pp.562-568
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• 2012

Metal nanowires can be coated on various substrates to create transparent conducting films that can potentially replace the dominant transparent conductor, indium tin oxide, in displays, solar cells, organic light-emitting diodes, and electrochromic windows. One issue with these metal nanowire based transparent conductive films is that the resistance between the nanowires is still high because of their low aspect ratio. Here, we demonstrate high-performance transparent conductive films with silver nanofiber networks synthesized by a low-cost and scalable electrospinning process followed by two-step sequential thermal treatments. First, the PVP/$AgNO_3$ precursor nanofibers, which have an average diameter of 208 nm and are several thousands of micrometers in length, were synthesized by the electrospinning process. The thermal behavior and the phase and morphology evolution in the thermal treatment processes were systematically investigated to determine the thermal treatment atmosphere and temperature. PVP/$AgNO_3$ nanofibers were transformed stepwise into PVP/Ag and Ag nanofibers by two-step sequential thermal treatments (i.e., $150^{\circ}C$ in $H_2$ for 0.5 h and $300^{\circ}C$ in Ar for 3 h); however, the fibrous shape was perfectly maintained. The silver nanofibers have ultrahigh aspect ratios of up to 10000 and a small average diameter of 142 nm; they also have fused crossing points with ultra-low junction resistances, which result in high transmittance at low sheet resistance.

• Korean Journal of Materials Research
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• v.32 no.9
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• pp.384-390
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• 2022

A spin coating process for RRAM, which is a TiN/TiO₂/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (V_O), a major factor of the conductive filament. It was carried out at 100 ℃ under moisture removal conditions and at 300 ℃ and 500 ℃ for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti³⁺ and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 ℃ showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 10⁴. The double-logarithmic plot of the I-V curve confirmed the device at 100 ℃ required a low operating voltage. As a result, the 100 ℃ heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO₂/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.

• Journal of the Korean Ceramic Society
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• v.42 no.4
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• pp.292-297
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• 2005

$LiMO_{2}(M=Co,Ni)$ samples were synthesized with $Li_{2}CO_{3},\;Co_{3}O_{4}$, and NiO by the solid-state reaction method. In the case of $LiCoO_{2}$, at low temperature$(T=400^{\circ}C)$ spinel structure was synthesized and the obtained spinel phase was transformed to layered phase at high temperature$(T\ge600^{\circ}C)$. The phase transition behaviors of $LiCoO_{2}$ were investigated with various heating temperature and time. The rate of transition was directly proportional to the concentrations of reactant, and activation energy of reaction was around 6.76 kcal/mol. When CoO(rock salt structure) was used as a starting material instead of $Co_{3}O_{4}$(spinel structure), layered structure of $LiCoO_{2}$ was obtained at low temperature. In the case of $LiNiO_{2}$ the transition from layered structure to rock salt structure occurred easily by disordering/ordering reaction, but did not occur in $LiCoO_{2}$. The difference in metal ion radii in $LiCoO_{2}$ and $LiNiO_{2}$ results in different behaviors of phase transitions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.145-145
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• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.5
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• pp.187-191
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• 2019

Perovskite-type oxides have consistently attracted considerable attention for their applications in high-temperature electrochemical devices, such as electrolytes and electrodes of solid oxide fuel cells, oxygen permeating membranes and sensors etc. Among them, the electrical conductivity of 10 % Sr and 10 % Mg doped $LaAlO_3$ (LSAM9191) was measured using impedance spectroscopy and 4-probe d.c. method. Below $550^{\circ}C$, the grain boundary resistance mostly determined the overall conductivity; however, it nearly disappeared above $800^{\circ}C$. Using the defect model and curve fitting, the ionic and electronic conductivity contributions were also separated. In the temperature region where the sample resistance is mostly determined by the grain volume property, LSAM9191 was an oxygen ion conductor at low $Po_2$ and a mixed conductor at high $Po_2$. With increasing temperature, the ionic conduction region only slightly increased. Thus, LSAM9191 is a promising material as an oxygen ion conductor at high temperature and in low $Po_2$.