• 제목/요약/키워드: low-temperature oxide

검색결과 1,088건 처리시간 0.026초

Characterization of Ln0.8Sr0.2CoO3-δ (Ln=Gd, Nd, Pr, Sm, or Yb) as Cathode Materials for Low-Temperature SOFCs

  • Choi, Jung-Woon;Kang, Ju-Hyun;Kim, Han-Ji;Yoo, Kwang-Soo
    • 한국세라믹학회지
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    • 제43권12호
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    • pp.758-763
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    • 2006
  • Perovskites with nominal compositions $Ln_{0.8}Sr_{0.2}CoO_{3-\delta}$ (Ln=Gd, Nd, Pr, Sm, or Yb) were fabricated as cathode materials using a solid-state reaction method for low-temperature operating Solid-Oxide Fuel Cells (SOFCs). X-ray diffraction analysis and microstructure observation for the sintered samples were performed. The ac complex impedance was measured in the temperature range of $600-900^{\circ}C$ in air and fitted with a Solartron ZView program. The crystal structure, microstructure, electrical conductivity, and polarization resistance of $Ln_{0.8}Sr_{0.2}CoO_{3-\delta}$ were characterized systematically.

산화물 합성법에 의한 $LaNiO_3$ 결정상의 저온합성 (Low temperature synthesis of $LaNiO_3$ crystalline phase via oxide powder technology)

  • 김대영;정재훈;손세모;김강언;정수태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계합동학술대회 논문집
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    • pp.218-223
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    • 2002
  • Low temperature synthesis of $LaNiO_3$ crystalline phase composited from mixtures of $La_2O_3$ and NiO via the ball mill and mechanochemical process were investigated. By the ball mill, 20% of $LaNiO_3$ crystalline phase was formed in the samples sintered at $900^{\circ}C$ due to the lack of reactivity of NiO. However, the mechanochemical process yielded about 93% of $LaNiO_3$ crystalline phase in room temperature.

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화성 암권의 진화해석을 위한 예비연구: 3가철 산화물의 자화특성 (Magnetism of Ferric Iron Oxide and Its Significance in Martian Lithosphere)

  • 정두희;유용재
    • 한국광물학회지
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    • 제24권3호
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    • pp.189-194
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    • 2011
  • 화성의 암권 진화 연구에서 최근 각광받는 광물은 적철석으로 대표되는 3가철 산화물이다. 물리적 방법의 하나인 잔류자화기억도 실험은 비파괴적이고 지구 기원이 아닌 고체 시료의 자화특성 규명에 유용하게 사용된다. 금번 연구에서는 알루미늄 농도를 조절하며 열수반응과 탈수반응을 통해 총 8개 성분의 3 가철 산화물을 합성하였다. 이들 시료에 대해 잔류자화기억도와 자화상실온도($T_N$)를 측정하였다. 3가철 산화물의 격자상수는 알루미늄의 3가철 함량이 증가하며 감소한다. 3 가철 산화물의 자화상실 온도 역시 알루미늄의 몰농도가 증가하며 감소한다. 알루미늄이 거의 첨가되지 않은 적철석의 $T_N$은 광물의 합성방법과 무관하게 대략 $690^{\circ}C$로 수렴한다. 탈수반응으로 합성된 3가철 산화물의 잔류자화기억도는 알루미늄의 함량에 거의 무관하게 매우 높지만, 열수반응으로 합성된 3가철 산화물의 잔류자화기억도는 알루미늄 함량이 증가하며 동반 상승한다. 상대적으로 쉽고 측정이 간단하며 비파괴적인 잔류자화기억도를 이용하면 추후 암석 내 3가철 산화물 입자의 성인 유추가 가능하며, 특히 화성의 암권 진화 규명에도 일조하리라 예상된다.

저온 PEMFC용 금속분리판 코팅의 내구 특성 연구 (Coating Durability of Metal Bipolar plate for Low Temperature PEMFC)

  • 강성진;전유택
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2010년도 추계학술대회 초록집
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    • pp.82.2-82.2
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    • 2010
  • The development of bipolar plate having high efficiency and chemical properties has a major impact on fuel cell applications commercialization. Even though graphite bipolar plate has high electric conductivity and chemical resistance, it has demerits about mass production and brittle property for commercialization. Hence, metallic bipolar plate can be substitute for fuel cell bipolar plate. Although its inadequate corrosion behavior under PEMFC environment lead to a deterioration of membrane by dissolved metal ions, metallic bipolar plate for PEMFC is more suitable for automotive and residential power generation system because of its high mechanical strength, low gas permeability and applicability to mass production. Therefore, several types of coating has been applied to prevent corrosion and oxide film growth and to achieve more high durability. This work presents durability of coated metal bipolar plate for low temperature PEMFC which made for fuel cell vehicle. This results showed surface treatment increase long-term durability, even electric conductivity and corrosion resistance.

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Multifunctional Indium Tin Oxide Thin Films

  • 장진녕;윤장원;이승준;홍문표
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.186-186
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    • 2015
  • We have introduced multifunctional ITO single thin films formed by normal sputtering system equipped with a plasma limiter which effectively blocks the bombardment of energetic negative oxygen ions. MFSS ITO also possesses high gas diffusion barrier properties simultaneously low resistivity even it deposited at room temperature without post annealing on plastic substrate. Nano-crystalline enhancement by Ar energy has energy window from 20 to 30 eV under blocking NOI condition. Effect of blocking NOI and optimal Ar energy window enhancement facilitate that resistivity is minimized to $3.61{\times}10^{-4}{\Omega}cm$ and the WVTR of 100 nm thick MFSS ITO is $3.9{\times}10^{-3}g/(m^2day)$ which is measured under environmental conditions of 90% relative humidity and 50oC that corresponds to a value of ${\sim}10^{-5}g/(m^2day)$ at room temperature. The multifunctional MFSS ITO with low resistivity, and low gas permeability will be highly valuable for plastic electronics applications.

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Low Temperature Plasma-Enhanced Atomic Layer Deposition Cobalt

  • 김재민;김형준
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 추계학술발표대회
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    • pp.28.2-28.2
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    • 2009
  • Cobalt thin film was fabricated by a novel NH3-based plasma-enhanced atomic layer deposition(PE-ALD) using Co(CpAMD) precursor and $NH_3$ plasma. The PE-ALD Co thin films were produced well on both thermally grown oxide (100 nm) $SiO_2$ and Si(001) substrates. Chemical bonding states and compositions of PE-ALD Co films were analyzed by XPS and discussed in terms of resistivity and impurity level. Especially, we successfully developed PE-ALD Code position at very low growth temperature condition as low as $T_s=100^{\circ}C$, which enabled the fabrication of Co patterns through lift-off method after the deposition on PR patterned substrate without any thermal degradation.

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전기방사 조건이 셀룰로오스 웹 형상에 미치는 영향 (Parametric Study on the Morphology of Electrospun Cellulose Web)

  • 정연수;정영진
    • 한국염색가공학회지
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    • 제24권1호
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    • pp.62-68
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    • 2012
  • Cellulose was electrospun over water collector and the cellulose solution was prepared using N-methyl-morpholine N-oxide/water(nNMMO/$H_2O$). The morphology of electrospun cellulose was investigated by scanning electron microscopy (SEM). SEM images showed that the fiber formation depended on processing parameters such as solution concentration, applied electric field strength, solution feeding rate and temperature of water in coagulation bath. High concentration, low temperature of water bath, and low feeding rate were more favorable to obtain fiber morphology. All the variables affected on the fluidity of the cellulose solution and diffusion of NMMO. Low fluidity and fast diffuision of NMMO was critical for obtaining fiber morphology.

망간 산화물에 의한 톨루엔 촉매 산화 반응 : (I) 촉매 반응 및 특성 평가 (Toluene Catalytic Oxidation by Manganese Oxide : (I) Activity and Characterization)

  • 천태진;김혜진;최성우
    • 한국대기환경학회지
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    • 제21권2호
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    • pp.161-168
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    • 2005
  • The catalytic oxidation of toluene in low concentration was investigated over manganese oxide/$\gamma$-A1$_{2}$O$_{3}$ catalysts. As increased manganese loading, the conversion of toluene increased at a lower temperature. The 18.2wt$\%$ Mn/$\gamma$-Al$_{2}$O$_{3}$ appeared to be the most active catalyst. XRD results indicated that most of the catalysts exist as MnO$_{2}$ and Mn$_{2}$O$_{3}$ crystalline phase. After the reaction, the used and the fresh catalysts were characterized by XPS. For the used catalyst, a prominent feature has increased. TPR profiles of 18.2 wt$\%$ Mn/$\gamma$-Al$_{2}$O$_{3}$ changed significantly as the manganese loading increased at a lower temperature.

Evaluation of Acceptor Binding Energy of Nitrogen-Doped Zinc Oxide Thin Films Grown by Dielectric Barrier Discharge in Pulsed Laser Deposition

  • Lee, Deuk-Hee;Chun, Yoon-Soo;Lee, Sang-Yeol;Kim, Sang-Sig
    • Transactions on Electrical and Electronic Materials
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    • 제12권5호
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    • pp.200-203
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    • 2011
  • In this research, nitrogen (N)-doped zinc oxide (ZnO) thin films have been grown on a sapphire substrate by dielectric barrier discharge (DBD) in pulsed laser deposition (PLD). DBD has been used as an effective way for massive in-situ generation of N-plasma under conventional PLD process conditions. Low-temperature photoluminescence spectra of N-doped ZnO thin films provided near-band-edge emission after a thermal annealing process. The emission peak was resolved by Gaussian fitting and showed a dominant acceptor-bound excitation peak ($A^{\circ}X$) that indicated acceptor doping of ZnO with N. The acceptor binding energy of the N acceptor was estimated to be approximately 145 MeV based on the results of temperature-dependent photoluminescence (PL) measurements.

원통형 스퍼터링에서 자계와 인가전압이 ITO형성에 미치는 영향 (The effect on formation of ITO by magnetic field and applied vol tape in cylindrical magnetron sputtering)

  • 하홍주;이우근;곽병구;김규섭;조정수;박정후
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1995년도 추계학술대회 논문집
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    • pp.302-305
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    • 1995
  • ITO(indium tin oxide) that is both conductive in electricity and transparent to the visible ray is called transparent conducting thin film. Nowaday, according to the development of flat panel display such as LCD(Liquid Crystal display, EL(electolumine- scence display), PDP(plasma display panel), ECD(electrocromic display), the higher quality in the low temperature process has been asked to reduce the production cost and to have a good uniformity on a large substrate. In this study, we prepared indium tin oxide(ITO) by a cylindrical DC magnetron sputtering with Indium-tin (9:1) alloy target instead of indium-tin oxide target. To reduce the defact in ITO, the effect on ITO by varing the magnetic field intensity and the applied voltage ares studied. the resistivity of the film deposited in oxygen partial pressure of 5% and substrate temperature of 140$^{\circ}C$. is 1.6${\times}$10$\^$-1/$\Omega$$.$cm with 85% optical transmission in viaible ray.

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