• Journal of the Korean Ceramic Society
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• v.43 no.12 s.295
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• pp.758-763
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• 2006

Perovskites with nominal compositions $Ln_{0.8}Sr_{0.2}CoO_{3-\delta}$ (Ln=Gd, Nd, Pr, Sm, or Yb) were fabricated as cathode materials using a solid-state reaction method for low-temperature operating Solid-Oxide Fuel Cells (SOFCs). X-ray diffraction analysis and microstructure observation for the sintered samples were performed. The ac complex impedance was measured in the temperature range of $600-900^{\circ}C$ in air and fitted with a Solartron ZView program. The crystal structure, microstructure, electrical conductivity, and polarization resistance of $Ln_{0.8}Sr_{0.2}CoO_{3-\delta}$ were characterized systematically.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05a
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• pp.218-223
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• 2002

Low temperature synthesis of $LaNiO_3$ crystalline phase composited from mixtures of $La_2O_3$ and NiO via the ball mill and mechanochemical process were investigated. By the ball mill, 20% of $LaNiO_3$ crystalline phase was formed in the samples sintered at $900^{\circ}C$ due to the lack of reactivity of NiO. However, the mechanochemical process yielded about 93% of $LaNiO_3$ crystalline phase in room temperature.

• Journal of the Mineralogical Society of Korea
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• v.24 no.3
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• pp.189-194
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• 2011

Martian satellite missions indicate that Martian equatorial plains are covered by ferric iron oxide. As a non-destructive technique, low-temperature treatment of remanent magnetization is effective in identifying magnetic minerals in rocks. In the present study, four sets of ferric iron oxides were prepared by aqueous alteration of ferrihydrite at warm conditions and four others by dehydration of goethite. As the amount of aluminous trivalent cations increases, crystallographic lattice parameters and N$\acute{e}$el temperatures decrease. Such declines originate from lattice distortion as the smaller aluminous trivalent cations substitue the larger terric irons. Whilst high remanence memory was observed for aqueously produced ferric iron oxide, low remanence memory was observed for dehydrated ferric iron oxide. In the future. magnetic remanence memory would be powerful in diagnosing the origin of ferric iron oxide.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.82.2-82.2
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• 2010

The development of bipolar plate having high efficiency and chemical properties has a major impact on fuel cell applications commercialization. Even though graphite bipolar plate has high electric conductivity and chemical resistance, it has demerits about mass production and brittle property for commercialization. Hence, metallic bipolar plate can be substitute for fuel cell bipolar plate. Although its inadequate corrosion behavior under PEMFC environment lead to a deterioration of membrane by dissolved metal ions, metallic bipolar plate for PEMFC is more suitable for automotive and residential power generation system because of its high mechanical strength, low gas permeability and applicability to mass production. Therefore, several types of coating has been applied to prevent corrosion and oxide film growth and to achieve more high durability. This work presents durability of coated metal bipolar plate for low temperature PEMFC which made for fuel cell vehicle. This results showed surface treatment increase long-term durability, even electric conductivity and corrosion resistance.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.186-186
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• 2015

We have introduced multifunctional ITO single thin films formed by normal sputtering system equipped with a plasma limiter which effectively blocks the bombardment of energetic negative oxygen ions. MFSS ITO also possesses high gas diffusion barrier properties simultaneously low resistivity even it deposited at room temperature without post annealing on plastic substrate. Nano-crystalline enhancement by Ar energy has energy window from 20 to 30 eV under blocking NOI condition. Effect of blocking NOI and optimal Ar energy window enhancement facilitate that resistivity is minimized to $3.61{\times}10^{-4}{\Omega}cm$ and the WVTR of 100 nm thick MFSS ITO is $3.9{\times}10^{-3}g/(m^2day)$ which is measured under environmental conditions of 90% relative humidity and 50oC that corresponds to a value of ${\sim}10^{-5}g/(m^2day)$ at room temperature. The multifunctional MFSS ITO with low resistivity, and low gas permeability will be highly valuable for plastic electronics applications.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.28.2-28.2
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• 2009

Cobalt thin film was fabricated by a novel NH3-based plasma-enhanced atomic layer deposition(PE-ALD) using Co(CpAMD) precursor and $NH_3$ plasma. The PE-ALD Co thin films were produced well on both thermally grown oxide (100 nm) $SiO_2$ and Si(001) substrates. Chemical bonding states and compositions of PE-ALD Co films were analyzed by XPS and discussed in terms of resistivity and impurity level. Especially, we successfully developed PE-ALD Code position at very low growth temperature condition as low as $T_s=100^{\circ}C$, which enabled the fabrication of Co patterns through lift-off method after the deposition on PR patterned substrate without any thermal degradation.

• Textile Coloration and Finishing
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• v.24 no.1
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• pp.62-68
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• 2012

Cellulose was electrospun over water collector and the cellulose solution was prepared using N-methyl-morpholine N-oxide/water(nNMMO/$H_2O$). The morphology of electrospun cellulose was investigated by scanning electron microscopy (SEM). SEM images showed that the fiber formation depended on processing parameters such as solution concentration, applied electric field strength, solution feeding rate and temperature of water in coagulation bath. High concentration, low temperature of water bath, and low feeding rate were more favorable to obtain fiber morphology. All the variables affected on the fluidity of the cellulose solution and diffusion of NMMO. Low fluidity and fast diffuision of NMMO was critical for obtaining fiber morphology.

• Journal of Korean Society for Atmospheric Environment
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• v.21 no.2
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• pp.161-168
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• 2005

The catalytic oxidation of toluene in low concentration was investigated over manganese oxide/$\gamma$-A1$_{2}$O$_{3}$ catalysts. As increased manganese loading, the conversion of toluene increased at a lower temperature. The 18.2wt$\%$ Mn/$\gamma$-Al$_{2}$O$_{3}$ appeared to be the most active catalyst. XRD results indicated that most of the catalysts exist as MnO$_{2}$ and Mn$_{2}$O$_{3}$ crystalline phase. After the reaction, the used and the fresh catalysts were characterized by XPS. For the used catalyst, a prominent feature has increased. TPR profiles of 18.2 wt$\%$ Mn/$\gamma$-Al$_{2}$O$_{3}$ changed significantly as the manganese loading increased at a lower temperature.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.200-203
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• 2011

In this research, nitrogen (N)-doped zinc oxide (ZnO) thin films have been grown on a sapphire substrate by dielectric barrier discharge (DBD) in pulsed laser deposition (PLD). DBD has been used as an effective way for massive in-situ generation of N-plasma under conventional PLD process conditions. Low-temperature photoluminescence spectra of N-doped ZnO thin films provided near-band-edge emission after a thermal annealing process. The emission peak was resolved by Gaussian fitting and showed a dominant acceptor-bound excitation peak ($A^{\circ}X$) that indicated acceptor doping of ZnO with N. The acceptor binding energy of the N acceptor was estimated to be approximately 145 MeV based on the results of temperature-dependent photoluminescence (PL) measurements.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.302-305
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• 1995

ITO(indium tin oxide) that is both conductive in electricity and transparent to the visible ray is called transparent conducting thin film. Nowaday, according to the development of flat panel display such as LCD(Liquid Crystal display, EL(electolumine- scence display), PDP(plasma display panel), ECD(electrocromic display), the higher quality in the low temperature process has been asked to reduce the production cost and to have a good uniformity on a large substrate. In this study, we prepared indium tin oxide(ITO) by a cylindrical DC magnetron sputtering with Indium-tin (9:1) alloy target instead of indium-tin oxide target. To reduce the defact in ITO, the effect on ITO by varing the magnetic field intensity and the applied voltage ares studied. the resistivity of the film deposited in oxygen partial pressure of 5% and substrate temperature of 140$^{\circ}C$. is 1.6${\times}$10$\^$-1/$\Omega$$.$cm with 85% optical transmission in viaible ray.