• 한국세라믹학회지
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• 제46권5호
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• pp.534-539
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• 2009

Reaction Bonded Silicon Carbide(RBSC) has been used for engineering ceramics due to low-temperature fabrication and near-net shape products with excellent structural properties such as thermal shock resistance, corrosion resistance and mechanical strength. Recently, attempts have been made to develop hot gas filter with gradient pore structure by RBSC to overcome weakness of commercial clay-bonded SiC filter such as low fracture toughness and low reliability. In this study a fabrication process of porous RBSC with multi-layer pore structure with gradient pore size was developed. The support layer of the RBSC with multi-layer pore structure was fabricated by conventional Si infiltration process. The intermediate and filter layers consisted of phenolic resin and fine SiC powder were prepared by dip-coating of the support RBSC in slurry of SiC and phenol resin. The temperature of $1550^{\circ}C$ to make Si left in RBSC support layer infiltrate into dip-coated layer to produce SiC by reacting with pyro-carbon from phenol resin.

• 한국주조공학회지
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• 제8권4호
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• pp.429-436
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• 1988

The influences of some casting conditions on bonding ratio and state at bonding zone of stainless steel-cast iron dual tube produced by centrifugal casting process were investigated to estimate fabrication technics. 1) Bonding ratio is increasing such as increasing of inner surface temperature of outer metal(stainless steel STS 304), if pouring temperature of inner metal (cast iron) is constant. 2) The more pouring temperature of inner metal (cast iron) increase, the more bonding ratio increase when inner surface temperature of outer metal (cast iron) is constant. 3) As the mold rotary speed is increase, the hatching area of bonding map (perfect bonding area) goes down to the low pouring temperature of inner metal. 4) In order to predict bonding state of two different metal, we are able to make and use the bonding map about casting conditions such as inner surface temperature of outer metal, pouring temperature of inner metal and mold rotary speed.

• Current Photovoltaic Research
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• 제11권1호
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• pp.1-7
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• 2023

Flexible dye sensitized photovoltaics (f-DSPVs) based on plastic substrates have attracted significant interest due to their light-weight, flexibility, and compatibility with roll-to-roll processing, as well as their potential application to ubiquitous power sources. However, f-DSPVs exhibit inferior power conversion efficiencies (PCE) compared to conventional DSPVs since the fabrication process must be conducted at a low-temperature (≤ 150℃) to prevent thermal damage of the plastic substrates, which generally results in poor interconnection between the TiO₂ nanoparticles. Numerous novel low-temperature manufacturing approaches for flexible photoanode and counter electrode have been developed. In this review, current progress on low temperature strategies for f-DSPVs technology are discussed.

• Nuclear Engineering and Technology
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• 제51권2호
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• pp.556-560
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• 2019

To provide high shunt impendence with low power losses, an 81.25 MHz continuous wave (CW) radio frequency quadrupole (RFQ) accelerator has been designed and machined as parts of the Low Energy Accelerator Facility (LEAF). In this paper, the mechanical structure and the main processing technology of the RFQ cavities are described according to the physical and geometric parameters requirements of the RFQ. The fabrication of the RFQ has been completed and the test results agree well with the design requirements. The RFQ accelerator will work in Institute of Modern Physics, Chinese Academy of Sciences in 2018.

• 한국세라믹학회지
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• 제29권6호
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• pp.419-430
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• 1992

Fabrication possibility of low-shrinkage alumina without oxidation and wetting agent was presented on the basis of observation about oxidation behavior, microstructure and physical characteristics of such reaction agents free Al2O3-Al system. The composition less than Al 10w/o where Al can act as a sintering agent for Al2O3 was excluded. Under the condition of present experiments oxidation of Al2O3-Al system was dependent not on holding time but mainly on oxidation temperature. In thes case of Al powder not comminuted effectively during powder mixing of Al2O3-Al, columnar structure which would act as a hindrance to the densification during sintering developed more during oxidation with higher Al contents, and which made the fabrication of low-shrinkage Al2O3 ceramics impossible. If Al powder was comminuted effectively due to co-mixed Al2O3 characteristics, densification was improved because of no columnar structure and made the fabrication of sintered body with -2.7% dimensional change and 81% relative density possible. As a result, it is possible to fabricate dense low-shrinkage Al2O3 ceramics without oxidation and wetting agent under conditions such as smaller particle size of Al, Al contents below 50v/o, higher green density of Al2O3-Al compact and the use of Al2O3 powder used for high-density ceramics.

• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.687-694
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• 2006

We report on the fabrication of organic-based flexible displays using an amorphous IZO anode grown at room temperature. The IZO anode films were grown by a conventional DC reactive sputtering on the polycarbonate (PC) substrate at room temperature using a synthesized IZO target in a $Ar/O_2$ ambient. Both x-ray diffraction (XRD) and high resolution electron microscope (HREM) examination results show that the IZO anode film grown at room temperature Is complete amorphous structure due to low substrate temperature. A sheet resistance of $35.6\Omega/\Box$, average transmittance above 90 % in visible range, and root mean spare roughness of $6\sim10.5\AA$ were obtained even in the IZO anode film grown on PC substrate at room temperature. It is shown that the $Ir(ppy)_3$ doped flexible organic light emitting diode (OLED) fabricated on the IZO anode exhibit comparable current-voltage-luminance characteristics as well as external quantum efficiency and power efficiency to OLED fabricated on conventional ITO/Glass substrate. These findings indicate that the IZO anode film grown on PC substrate is a promising anode materials for the fabrication of organic based flexible displays.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권6호
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• pp.235-240
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• 2003

In this paper, we present the fabrication and the characteristic analysis of sequential lateral solidification(SLS) poly-Si thin film transistors(TFT's) with molybdenum gate for active matrix liquid displays (AMLCD's) pixel controlling devices. The molybdenum gate is applied for the purpose of low temperature processing. The maximum processing temperature is 55$0^{\circ}C$ at the dopant thermal annealing step. The SLS processed poly-Si film which is reduced grain and grain boundary effect, is applied for the purpose of electrical characteristics improvements of poly-Si TFT's. The fabricated low temperature SLS poly-Si TFT's had a varying the channel length and width from 10${\mu}{\textrm}{m}$ to 2${\mu}{\textrm}{m}$. And to analyze these devices, extract electrical characteristic parameters (field effect mobility, threshold voltage, subthreshold slope, on off current etc) from current-voltage transfer characteristics curve. The extract electrical characteristic of fabricated low temperature SLS poly-Si TFT's showed the mobility of 100~400cm$^2$/Vs, the off current of about 100pA, and the on/off current ratio of about $10^7$. Also, we observed that the change of grain boundary according to varying channel length is dominant for the change of electrical characteristics more than the change of grain boundary according to varying channel width. Hereby, we comprehend well the characteristics of SLS processed poly-Si TFT's witch is recrystallized to channel length direction.

• E2M - 전기 전자와 첨단 소재
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• 제10권9호
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• pp.869-875
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• 1997

Bi based superconducting thin films were fabricated by 4-target RF magnetron sputtering using the method of controlling the on-off time. These thin films showed better crystal structures. The ratio of Cu/Bi decreased but the critical temperature increased with increasing the temperature of the substrate. High temperature phase low temperature of the substrate. High temperature phase low temperature phase and semiconducting phase can be formed by controlling the on-off time of the shutter respectively.

• 한국해양공학회:학술대회논문집
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• 한국해양공학회 2004년도 학술대회지
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• pp.266-270
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• 2004

SiC materials have been extensively studied for high temperature components in advanced energy system and advanced gas turbine because it has excellent high temperature strength, low coefficient of thermal expansion, good resistance to oxidation and good thermal and chemical stability etc. However, the brittle characteristics of SiC such as low fracture toughness and low strain-to fracture still impose a severe limitation on practical applications of SiC materials. For these reasons, SiC/SiC composites can be considered as a promising for various structural materials, because of their good fracture toughness compared with monolithic SiC ceramics. But, high temperature and pressure lead to the degradation of the reinforcing jiber during the hot pressing. Therefore, reduction of sintering temperature and pressure is key requirements for the fabrication of SiC/SiC composites by hot pressing method. In the present work, monolithic Liquid Phase Sintered SiC (LPS-SiC) was fabricated by hot pressing method in Ar atmosphere at $1800^{\circ}C$ under 20MPa using $Al_2O_3,\;Y_2O_3\;and\;SiO_2$ as sintering additives in order to low sintering temperature and sintering pressure. The starting powder was high purity $\beta-SiC$ nano-powder with all average particle size of 30mm. The characterization of LPS-SiC was investigated by means of SEM and three point bending test. Base on the composition of sintering additives-, microstructure- and mechanical property correlation, tire compositions of sintering additives are discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권4호
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• pp.295-301
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• 2002

In this paper, solenoid-type 3-D passives (inductors and transformers) have been designed, fabricated, and characterized by using electroplating techniques, wire bonding techniques, multi-layer thick photoresist, and low temperature processes which are compatible with semiconductor circuitry fabrication. Two different fabrication approaches are performed to develop the solenoid-type 3-D passives and relationship of performance characteristics and geometry is also deeply investigated such as windings, cross-sectional area of core, spacing between windings, and turn ratio. Fully integrated inductor has a quality factor of 31 at 6 GHz, an inductance of 2.7 nH, and a self resonant frequency of 15.8 GHz. Bonded wire inductor has a quality factor of 120, an inductance of 20 nH, and a self resonant frequency of 8 GHz. Integrated transformers with turn ratios of 1:1 and n:l have the minimum insertion loss of about 0.6 dB and the wide bandwidth of a few GHz.