• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.43-47
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• 2008

[ $ZnO-Bi_2O_3-Al_2O_3-B_2O_3-SiO_2$ ] nano-glass has been prepared by sol-gel method. The mean particle size was 60.3 nm with narrow size distribution. The nano-galss has been used as a sintering aid for the densification of the NiZnCu ferrites. The ferrite was sintered with nano-glass sintering aids at $840{\sim}900^{\circ}C$, 2 h and the initial permeability, quality factor, density, and saturation magnetization were also measured. The initial permeability of 0.5 wt% nano-glass added toroidal sample for NiZnCu ferrites sintered at $900^{\circ}C$ was 193.3 at 1 MHz. The initial permeability and saturation magnetization were increased with increasing annealing temperature. As a result, $ZnO-Bi_2O_3-Al_2O_3-B_2O_3-SiO_2$ nano-glass systems were found to be useful as sintering aids for multilayer chip inductors.

• Journal of the Korean Ceramic Society
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• v.39 no.6
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• pp.598-603
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• 2002

The effects of alumine borosilicate glass composition on the densification and the microwave properties of (M $g_{0.93}$C $a_{0.07}$)Ti $O_3$ ceramics were studied. As the amount of glass increase, the density of ceramics increases and grain growth enhances. When 20 ~30 wt% of glass added, it was densified to over 95% of (M $g_{0.93}$C $a_{0.07}$)Ti $O_3$ theoretical density. (M $g_{0.93}$C $a_{0.07}$)Ti $O_3$ ceramic sintered at 95$0^{\circ}C$ exhibits dielectric constants of 15~16, quality factor of 8000 and temperature coefficient of resonant frequency of -45 ppm/$^{\circ}C$ by adding 20 wt% alumine borosilicate glass.

• Journal of the Korean Ceramic Society
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• v.41 no.9
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• pp.709-714
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• 2004

The additive of low temperature sintering in Mn-doped PMN-PZT known as high piezoelectric materials was studied in this experiment. B$_2$O$_3$ was used for the additive of low temperature sintering. The effects of sintering temperature in dielectric, and piezoelectric properties were investigated with the amounts of B$_2$O$_3$. Sintered density was increased in comparison with no addition and under 2wt％ B$_2$O$_3$ and lower sintering temperature than 100$0^{\circ}C$. Therefore, in the low sintering temperature, the densification was improved by the addition of the B$_2$O$_3$. However, the sintering density was lower than that of the main composition in the case of the sintered at over 10$50^{\circ}C$. Dielectric constant with the addition of B$_2$O$_3$ was evaluated. The dielectric constant was 1000 2 wt％ of B$_2$O$_3$ and sintered at 100$0^{\circ}C$. Under 2wt％ of B$_2$O$_3$, the electromechanical coupling factor and the piezoelectric constant were not so much decreased. The electromechanical coupling factor and the piezoelectric constant were 50％ and 300(${\times}$10$^{-12}$ C/N) respectively. The mechanical quality factor was increased with B$_2$O$_3$. The mechanical quality factor was 1700 at 0.5wt％ B$_2$O$_3$ and sintered at 110$0^{\circ}C$. Dielectric loss was less than 0.5％ regardless of the amount of B$_2$O$_3$.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.83-89
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• 2015

In this paper, we propose a fabrication technique for enhanced electrical properties of piezoelectric thick films with excellent patterning property using sol-infiltration and a direct-patterning process. To achieve the needs of high-density and direct-patterning at a low sintering temperature (< $850^{\circ}C$), a photosensitive lead zirconate titanate (PZT) solution was infiltrated into a screen-printed thick film. The direct-patterned PZT films were clearly formed on a locally screen-printed thick film, using a photomask and UV light. Because UV light is scattered in the screen-printed thick film of a porous powder-based structure, there are needs to optimize the photosensitive PZT sol infiltration process for obtaining the enhanced properties of PZT thick film. By optimizing the concentration of the photosensitive PZT sol, UV irradiation time, and solvent developing time, the hybrid films prepared with 0.35 M of PZT sol, 4 min of UV irradiation and 15 sec solvent developing time, showed a very dense with a large grain size at a low sintering temperature of $800^{\circ}C$. It also illustrated enhanced electrical properties (remnant polarization, $P_r$, and coercive field, $E_c$). The $P_r$ value was over four times higher than those of the screen-printed films. These films integrated on silicon wafer substrate could give a potential of applications in micro-sensors and -actuators.

• Journal of the Korean Regional Science Association
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• v.35 no.4
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• pp.61-73
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• 2019

Urban development and densification have led to the Urban Heat Island Effect, in which the temperature of urban space is higher than the surrounding areas, and the intensity is increasing with climate change. In addition, when the city's air temperature rises in summer, low-income, elderly population, and socially vulnerable people who have health problems lack the ability to cope with the elevated heat environment. Therefore, this study aimed to identify the urban heat island area of Seoul through Hotspot analysis, which is a spatial statistics technique, and explored physical environments, demographic and socioeconomic characteristics of urban heat island effect areas using logistic regression models. This study performed urban heat island hotspot analysis using the average air temperatures of the 423 administrative dongs in Seoul. Analysis results identified that the urban heat islands were concentrated in Jung-gu, Jongno-gu, Yongsan-gu, and Yeongdeungpo-gu. Logistic regression analysis results indicated that urban heat island areas of Seoul were affected by residential floor area ratio, commercial facility floor area ratio, overall floor area ratio, impervious surface ratio, and normalized difference vegetation index(NDVI). In addition, as a result of analyzing the vulnerable area of thermal environment considering the demographic and socioeconomic characteristics of the heat island area, urban heat island areas of Seoul were significantly associated with the proportion of low-income elderly living alone. The result of this study provided useful insights for urban thermal environmental design and policy development that could improve the thermal environment for the socially disadvantaged urban population.

• International Journal of Highway Engineering
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• v.17 no.4
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• pp.53-61
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• 2015

PURPOSES : The objective of this study is to evaluate the SDAR (solvent deasphaltene residue), which is obtained from the solvent deasphalting (SDA) process, as a pavement material. METHODS : The physical properties of the SDAR were evaluated based on its chemical composition, and asphalt mixtures with the SDAR were fabricated and used for the evaluation of mechanical properties. Firstly, the chemical composition of SARA (saturate, aromatic, resin and asphaltene) was analyzed using the TLC-FID (thin-layer chromatography-flame ionization detector). Moreover, the basic material properties of the asphalt binder with the SDAR were evaluated by the penetration test, softening point test, ductility test, and PG (performance grade) grade test. The rheological properties of the asphalt binder with the SDAR were evaluated by the dynamic shear modulus ($G^*$) obtained using the time-temperature superposition (TTS) principle. Secondly, the mechanical properties of the asphalt mixtures with the SDAR were evaluated. The compactibility was evaluated using the gyratory compacter. Moreover, the tensile strength ratio (TSR) was used for evaluating the moisture susceptibility of the asphalt mixtures (i.e., susceptibility to pothole damage). The dynamic modulus $E^*$, which is a fundamental property of the asphalt mixture, obtained at different temperatures and loading cycles, was used to evaluate the mechanical properties of the asphalt mixtures. RESULTS AND CONCLUSION : The SDAR shows stiffer and more brittle behavior than the conventional asphalt binder. As the application of the SDAR directly in the field may cause early failures, such as cracks on pavements, it should be applied with modifiers that can favorably modify the brittleness property of the SDAR. Therefore, if appropriate additives are applied on the SDAR, it can be used as a pavement material because of its low cost and strong resistance to rutting.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.114-120
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• 2012

In this research, we prepared Ga doped zinc oxide(ZnO:Ga, GZO) targets each difference sintering temperature $700^{\circ}C$, $800^{\circ}C$, and doping rate 1 wt.%, 2 wt.%, 3 wt.%. The characteristics of thin film on glass substrates which deposited by facing target sputtering in pure Ar atmosphere are reported. Ga doped zinc oxide film is attracted material through low resistivity, high transmittance, etc. When prepared target powder's structure was investigated by scanning electron microscope, densification and coarsening by driving force was observed. For each ZnO:Ga films with a $Ga_2O_3$ content of 3 wt.% at input power of 45W, the lowest resistivity of $9.967{\times}10^{-4}{\Omega}{\cdot}cm$ ($700^{\circ}C$) and $9.846{\times}10^{-4}{\Omega}{\cdot}cm$ ($800^{\circ}C$) was obtained. the carrier concentration and mobility were $4.09{\times}10^{20}cm^{-3}$($700^{\circ}C$), $4.12{\times}10^{20}cm^{-3}$($800^{\circ}C$) and $15.31cm^2/V{\cdot}s(700^{\circ}C)$, $12.51cm^2/V{\cdot}s(800^{\circ}C)$, respectively. And except 1 wt.% Ga doped ZnO thin film, average transmittance of these samples in the range 350-800 nm was over 80%.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.167-272
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• 1998

The fluorine doped silicon oxide (SiOF) intermetal dielectric (IMD) films havc been of interest due to their lower dielectric constant and compatibility with existing process tools. However, instability issues related to hond and increasing dielectric constant due to water absorption when the SiOF film was exposured to atmospheric ambient. Therefore, the purpose nf this research is to study the effect of post oxygen plasma treatment on the resistance of nioisture absorption and reliability of SiOF film. Improvement of moisture ahsorption resistance of SiOF film is due to the forming of thin $SiO_2$ layer at the SiOF film surface. It is thought that the main effect of the improvement of moisture absorption resistance was densification of the top layer and reduction in the numher of Si-F honds that tend to associate with OH honds. However, the dielectric constant was inucased when plasma treatment time is above 5 min. In this study, therefore, it is thought that the proper plasma treatment time is 3 min when plasma treatment condition is 700 W of microwave power, 3 mTorr of process pressure and $300^{\circ}C$ of substrate temperature.

• Korean Journal of Materials Research
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• v.28 no.2
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• pp.118-123
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• 2018

5 nm-thick $SiO_2$ layers formed by plasma-enhanced chemical vapor deposition (PECVD) are densified to improve the electrical and interface properties by using nitric acid oxidation of Si (NAOS) method at a low temperature of $121^{\circ}C$. The physical and electrical properties are clearly investigated according to NAOS times and post-metallization annealing (PMA) at $250^{\circ}C$ for 10 min in 5 vol% hydrogen atmosphere. The leakage current density is significantly decreased about three orders of magnitude from $3.110{\times}10^{-5}A/cm^2$ after NAOS 5 hours with PMA treatment, although the $SiO_2$ layers are not changed. These dramatically decreases of leakage current density are resulted from improvement of the interface properties. Concentration of suboxide species ($Si^{1+}$, $Si^{2+}$ and $Si^{3+}$) in $SiO_x$ transition layers as well as the interface state density ($D_{it}$) in $SiO_2/Si$ interface region are critically decreased about 1/3 and one order of magnitude, respectively. The decrease in leakage current density is attributed to improvement of interface properties though chemical method of NAOS with PMA treatment which can perform the oxidation and remove the OH species and dangling bond.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.174-177
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• 2019

The traditional yttria-stabilized zirconia (YSZ) used in thermal barrier coatings has a limited operating temperature owing to densification and volume changes at high temperatures. A $(La_{1-x}Y_x)_2Zr_2O_7$ sintered compound was prepared by the co-precipitation and oxalate methods, by adding lanthanum zirconate to yttria. The thermal properties and crystallinity obtained by the two different methods were compared. Both methods yielded pyrochlore structures, and the oxalate method confirmed phases at low temperatures. The thermal conductivity of the sintered bulk prepared by co-precipitation was 0.93 W/mK, while that prepared by the oxalate method was 0.85 W/mK. These values are superior to that of 4YSZ at $1,000^{\circ}C$, which is widely used in industries.