• Progress in Superconductivity and Cryogenics
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• v.14 no.4
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• pp.28-31
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• 2012

We report the solid-liquid phase equilibria on the $GdBa_2Cu_3O_{7-{\delta}}$ (GdBCO) stability phase diagram in low oxygen pressures ($PO_2$) ranging from 1 to 100 mTorr. On the basis of the GdBCO stability phase diagram experimentally determined in low oxygen pressures, the isothermal sections of three different phase fields on log $PO_2$ vs. 1/T diagram were schematically constructed within the $Gd_2O_3-Ba_2CuO_y-Cu_2O$ ternary system, and the solid-liquid phase equilibria in each phase field were described. The invariant points on the phase boundaries include the following three reactions; a pseudobinary peritectic reaction of $GdBCO{\leftrightarrow}Gd_2O_3$ + liquid ($L_1$), a ternary peritectic reaction of $GdBCO{\leftrightarrow}Gd_2O_3+GdBa_6Cu_3O_y$ + liquid ($L_2$), and a monotectic reaction of $L_1{\leftrightarrow}GdBa_6Cu_3O_y+L_2$. A conspicuous feature of the solid-liquid phase equilibria in low $PO_2$ regime (1 - 100 mTorr) is that the GdBCO phase is decomposed into $Gd_2O_3+L_1$ or $Gd_2O_3+GdBa_6Cu_3O_y+L_2$ rather than $Gd_2BaCuO_5+L$ well-known in high $PO_2$ like air.

• Korean Journal of Materials Research
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• v.27 no.11
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• pp.577-582
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• 2017

Self-cleaning and photocatalytic $TiO_2$ thin films were prepared by a facile sol-gel method followed by spin coating using peroxo titanic acid as a precursor. The as-prepared thin films were heated at low temperature($110^{\circ}C$) and high temperature ($400^{\circ}C$). Thin films were characterized by X-ray diffraction(XRD), Field-emission scanning electron microscopy(FESEM), UV-Visible spectroscopy and water contact angle measurement. XRD analysis confirms the low crystallinity of thin films prepared at low temperature, while crystalline anatase phase was found the for high temperature thin film. The photocatalytic activity of thin films was studied by the photocatalytic degradation of methylene blue dye solution. Self-cleaning and photocatalytic performance of both low and high temperature thin films were compared.

• Journal of Photoscience
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• v.9 no.1
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• pp.23-28
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• 2002

In order to obtain thermal-stable, low birefringent, and low optical loss waveguiding materials, we synthesized several fluorinated poly (maleimide-co-glycidylmethacrylate)s using a pentafluorophenylmaleimide (PEM) and two kinds of methacrylate derivatives as comonomers and glycidylmethacrylate as a crosslinker. One comonomer is a linear fluorinated methacrylate (HFBM) and another is a bulky norbornane-derived methacrylate (NMMA). These copolymers could be self-crosslinked by heating due to epoxy groups of glycidylmethacrylates. As a maleimide contents increased to 50 mol%, these copolymers showed high decomposition temperatures of above 300$^{\circ}C$. The refractive index could be precisely controlled by the variation of PFM/HFBA or PFM/NMMA feed ratio in the range of 1.410∼1.508 at 643 nm. The copolymers had very low birefringence in the range of 1∼5${\times}$10$\^$-4/.

• Korean Journal of Materials Research
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• v.18 no.5
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• pp.283-288
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• 2008

The effect of sintering aids and glass-frit on the densification and resistivity of silver paste was investigated in an effort to enhance the sintered density and electrical conductivity of the silver electrode. To prepare Pb-free silver paste for use at low sintering temperatures, two commercial silver powders ($0.8\;{\mu}m$ and $1.6\;{\mu}m$ in size) and 5wt.% lab-synthesized nanoparticles (30-50 nm in size) as a sintering aids were mixed with 3 wt.% or 6 wt.% of glass frit ($Bi_2O_3$-based) using a solvent and three roll mills. Thick films from the silver paste were prepared by means of screen printing on an alumina substrate followed by sintering at $450^{\circ}C$ to $550^{\circ}C$ for 15 min. Silver thick films from the paste with bimodal particles showed a high packing density, high densification during sintering and low resistivity compared to films created using monomodal particles. Silver nanoparticles as a sintering aid enhanced the densification of commercial silver powder at a low sintering temperature and induced low resistivity in the silver thick film. The glass frit also enhanced the densification of the films through liquid phase sintering; however, the optimum content of glass frit is necessary to ensure that a dense microstructure and low resistivity are obtained, as excessive glass-frit can provoke low conductivity due to the interconnection of the glass phase with the high resistivity between the silver particles.

• Bulletin of the Korean Chemical Society
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• v.32 no.3
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• pp.894-898
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• 2011

The first example of lead compound from $Pb(NO_3)_2$ and $H_3L$ N-heterocyclic ligand $(H_3L\;=\;(HO_2C)_2(C_3N_2)(C_3H_7)CH_2(C_6H_4)(C_6H_3)CO_2H)$, $[Pb_4(L')_4]{\cdot}5H_2O$ 1 (L' = OOC$(C_3H_7)(C_3N_2)CH_2(C_6H_4)(C_6H_3)COO)$, has been obtained under hydrothermal condition by decarboxylation, and characterized by elemental analysis, IR, TGDTA, and single-crystal X-ray diffraction. Compound 1 possesses a rare two-dimensional upper-lower offset terrace-like layer structure. In 1, crystallographic distinct Pb(II) ion adopts five-coordination geometry, and two lattice water molecules occupy the voids between 2-D layers. Results of solid state fluorescence measurement indicate that the emission band 458 nm may be assigned to $\pi^*-n$ and $\pi^*-\pi$ electronic transitions within the aromatic systems of the ligand L', however, the emission bands centred at 555 nm, 600 nm and 719 nm may be derived from phosphorescent emission ($\lambda_{excitation}$ = 390 nm).

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.234-234
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• 2015

Metallic microwires are a promising material for use as a filler in various conductive composite structures. Because of their high anisotropy in shape, a low percolation threshold could be achieved, which is beneficial to a low-cost fabrication and better electrical conductivity even under an extremely low solid content. Here we developed a facile method to fabricate the Cu (core)-Ni (shell) microwires.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.33-33
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• 2007

In PDP industry, the dielectrics and barrier ribs have been required with low dielectric constant, low melting point and Pb-free composition due to the low power consumption, low signal delay time and the environment restriction. We were studied with $B_2O_3-Al_2O_3$-SrO glass systems about optical, thermal and dielectric properties. The glass forming region of the $B_2O_3-Al_2O_3$-SrO glass systems was narrow due to the amount of the glass former $(B_2O_3)$. The glass transition temperature (Tg) of the glasses was at $550{\sim}590^{\circ}C$. The glasses have 6~8 for the dielectric constant. Furthermore, the transmittance of the glasses was over 80% on the range of the visible ray. From the results, the glasses of the $B_2O_3-Al_2O_3$-SrO glass systems should enable to be a good candidate of the PDP devices for information display with low dielectric constant. The aim of this study is to give a fundamental result of new glass system for low dielectric constant in the information display.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1065-1066
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• 2008

Printed thin-film transistors (TFTs) have received profound interests as an alternative to their silicon counterparts for use in fabricating next-Gen microelectronics by virtue of projected low manufacturing cost and certain salient features (e.g., thin and lightweight characteristics, structural flexibility, etc.) that printed TFTs bring to device architecture. The economic advantages stem from engaging low-cost printing techniques (e.g., screen printing, gravure, flexography, etc.) for deposition and patterning in place of traditionally costly high-vacuum, high-temperature photolithographic processes. To render printing TFTs possible, solution processable materials are necessary.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.05a
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• pp.150-150
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• 2002

• ETRI Journal
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• v.31 no.6
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• pp.725-731
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• 2009

In this paper, electrostatic discharge (ESD) protection circuits with an advanced substrate-triggered NMOS and a gate-substrate-triggered NMOS are proposed to provide low trigger voltage, low leakage current, and fast turn-on speed. The proposed ESD protection devices are designed using 0.13 ${\mu}m$ CMOS technology. The experimental results show that the proposed substrate-triggered NMOS using a bipolar transistor has a low trigger voltage of 5.98 V and a fast turn-on time of 37 ns. The proposed gate-substrate-triggered NMOS has a lower trigger voltage of 5.35 V and low leakage current of 80 pA.