• Title/Summary/Keyword: low-k materials

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A Study on Improvement of the low temperature flex resistance test method about high waterproof materials (고기능성 투습방수 소재의 저온굴곡 시험방법 개선 연구)

  • Lee, Minhee;Moon, Sunjeong;Ko, Hyeji;Hong, Seongdon
    • Journal of Korean Society for Quality Management
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    • v.46 no.3
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    • pp.425-440
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    • 2018
  • Purpose: This study is aimed at developing of the flex resistance testing process at low temperature with the waterproof fabric to suit the military environment, and is designed to fit for the purpose of the waterproof materials in order to optimize the test method by finding out matters to improve from existing the test method and through previous studies. Methods: The test method, which has been applied to flex resistance of existing water-repellent materials, was improved and consequently, differentiated test results could be obtained according to the test temperature, sample size, and flexing method. Results: The testing of the total of 8 samples revealed that performance of the military requirement could hardly be met just by presenting the materials or 2~3 layers when the quality criteria for high functional water repellent fabrics were applied. PTFE(Polytetrafluoroethylene) is preferred to PU(Polyurethane) to be used in the extremely low-temperature environment, but durability under the low-temperature environment may be varied depending on film thickness or laminating technique even if the materials of waterproof films are identical. Therefore, in addition to the material or texture, the test method capable of reflecting durability under the low-temperature environment shall be suggested, and the newly designed test method proposed in this study was shown to suggest differentiated quality criteria by the material. Conclusion: The water resistance measurement and the test method following flex resistance with expanded range of flex will enable the differentiable test of the samples according to the number of repetition. This study is meaningful in that it suggests a differentiable test method capable of establishing a basis of deciding suitable material when selecting military goods made of water repellent material by properly improving the test method.

Synthesis of Conjugated Linoleic Acid Methylester using Heterogeneous Catalysts (불균일계 촉매에 의한 공액 리놀레산 메틸에스테르의 합성)

  • Yuk, Jeong-Suk;Lee, Sang-Jun;Kim, Nam-Kyun;Kim, Young-Wun;Yoon, Byeong-Tae
    • Applied Chemistry for Engineering
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    • v.24 no.3
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    • pp.291-298
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    • 2013
  • Conjugated linoleic acid methylester was synthesized through isomerization of linoleic acid methylester by using heterogeneous catalysts. As for heterogeneous catalysts, Ni supported zeolite type catalysts were used. H zoelite Y (HY) were ion exchanged with KCl aqueous solution to synthesize K zeolite Y (KY), and with impregnation method, Ni supported zeolite catalysts were synthesized. Catalysts were used after pre-treatment by using hydrogen. HY catalysts showed a high conversion at low temperatures; but a low selectivity for conjugation reaction. KY catalysts showed a low conversion at low temperatures; but a similar conversion with HY catalysts at high temperatures while a high selectivity at low temperatures. As a result, 4 wt% Ni/KY720 recorded the high conjugation yield of 63.4% at 220.

Co-Firing of Low- and Middle- Permittivity Dielectric Tapes of Fabricating Low-Temperature Co-Fired Ceramics (LTCC용 저/중유전율 유전체 후막의 동시소성)

  • Choi Young-Jin;Park Jeong-Hyun;Ko Won-Jun;Park Jae-Hwan;Nahm Sahn;Park Jae-Gwan
    • Korean Journal of Materials Research
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    • v.14 no.10
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    • pp.731-736
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    • 2004
  • Herein, we report on the co-firing of a low-K wiring substrate and a middle-K functional substrate in LTCC. Firstly, we researched the sintering behavior and dielectric properties of the low-k wiring substrate comprised by alumina and glass frit with ${\varepsilon}_r$, of $\sim7$ and the middle-k functional substrate comprised by $Ba_{5}Nb_{4}O_{15}$ and glass frit with ${\varepsilon}_r$, of $20\sim30$. The warpage and delamination between the hetero layers of the low-K and the middle-K composition were also studied. In particular, physical matching of the hetero layers could be possible by adjusting of the sintering properties of the composition. We observed that an introduction of the glass frit to the low- and middle-K substrate gives rise to a minimization of an effect given by separation of the hetero layers, and modification of the fraction of the glass frit accompanied by a variation of the composition could control the sintering behavior and its beginning temperature. In the case of co-firing of the L03 as the low-K wiring substrate composition and the M03 as the middle-K functional substrate composition at $875^{\circ}C$, we could fabricate a desirable structure of hetero layers without any kinds of structural defects such as separation, warpage, delamination, pore trap, etc. We suppose that the co-firing techniques described in this study would provide a helpful method to fabricate a LTCC multi-functional for the next generation.

Fabrication of PMMA Micro CE Chip Using IPA Assisted Low-temperature Bonding (IPA 저온 접합법을 이용한 PMMA Micro CE Chip의 제작)

  • Cha, Nam-Goo;Park, Chang-Hwa;Lim, Hyun-Woo;Cho, Min-Soo;Park, Jin-Goo
    • Korean Journal of Materials Research
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    • v.16 no.2
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    • pp.99-105
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    • 2006
  • This paper reports an improved bonding method using the IPA (isopropyl alcohol) assisted low-temperature bonding process for the PMMA (polymethylmethacrylate) micro CE (capillary electrophoresis) chip. There is a problem about channel deformations during the conventional processes such as thermal bonding and solvent bonding methods. The bonding test using an IPA showed good results without channel deformations over 4 inch PMMA wafer at $60^{\circ}C$ and 1.3 bar for 10 minutes. The mechanism of IPA bonding was attributed to the formation of a small amount of vaporized acetone made from the oxidized IPA which allows to solvent bonding. To verify the usefulness of the IPA assisted low-temperature bonding process, the PMMA micro CE chip which had a $45{\mu}m$ channel height was fabricated by hot embossing process. A functional test of the fabricated CE chip was demonstrated by the separation of fluorescein and dichlorofluorescein. Any leakage of liquids was not observed during the test and the electropherogram result was successfully achieved. An IPA assisted low-temperature bonding process could be an easy and effective way to fabricate the PMMA micro CE chip and would help to increase the yield.

Conducting Metal Oxide Interdigitated Electrodes for Semiconducting Metal Oxide Gas Sensors

  • Shim, Young-Seok;Moon, Hi-Gyu;Kim, Do-Hong;Jang, Ho-Won;Yoon, Young-Soo;Yoon, Soek-Jin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.65-65
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    • 2011
  • We report the application of conducting metal oxide electrodes for semiconducting metal oxide gas sensors. Pt interdigitated electrodes have been commonly used for metal oxide gas sensor because of the low resistivity, excellent thermal and chemical stability of Pt. However, the high cost of Pt is an obstacle for the wide use of metal oxide gas sensors compared with its counterpart electrochemical gas sensors. Meanwhile, relatively low-cost conducting metal oxides are widely being used for light-emitting diodes, flat panel displays, solar cell and etc. In this work, we have fabricated $WO_3$ and $SnO_2$ thin film gas sensors using interdigitated electrodes of conducting metal oxides. Thin film gas sensors based on conducting metal oxides exhibited superior gas sensing properties than those using Pt interdigitated electrodes. The result was attributed to the low contact resistance between the conducting metal oxide and the sensing material. Consequently, we demonstrated the feasibility of conducting metal oxide interdigitated electrodes for novel gas sensors.

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Synthesis and Characterization of Methyltriphenylsilane for SiOC(-H) Thin Film (SiOC(-H) 박막 제조용 Methyltriphenylsilane 전구체 합성 및 특성분석)

  • Han, Doug-Young;Park Klepeis, Jae-Hyun;Lee, Yoon-Joo;Lee, Jung-Hyun;Kim, Soo-Ryong;Kim, Young-Hee
    • Korean Journal of Materials Research
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    • v.20 no.11
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    • pp.600-605
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    • 2010
  • In order to meet the requirements of faster speed and higher packing density for devices in the field of semiconductor manufacturing, the development of Cu/Low k device material is explored for use in multi-layer interconnection. SiOC(-H) thin films containing alkylgroup are considered the most promising among all the other low k candidate materials for Cu interconnection, which materials are intended to replace conventional Al wiring. Their promising character is due to their thermal and mechanical properties, which are superior to those of organic materials such as porous $SiO_2$, SiOF, polyimides, and poly (arylene ether). SiOC(-H) thin films containing alkylgroup are generally prepared by PECVD method using trimethoxysilane as precursor. Nano voids in the film originating from the sterichindrance of alkylgroup lower the dielectric constant of the film. In this study, methyltriphenylsilane containing bulky substitute was prepared and characterized by using NMR, single-crystal X-ray, GC-MS, GPC, FT-IR and TGA analyses. Solid-state NMR is utilized to investigate the insoluble samples and the chemical shift of $^{29}Si$. X-ray single crystal results confirm that methyltriphenylsilane is composed of one Si molecule, three phenyl rings and one methyl molecule. When methyltriphenylsilane decomposes, it produces radicals such as phenyl, diphenyl, phenylsilane, diphenylsilane, triphenylsilane, etc. From the analytical data, methyltriphenylsilane was found to be very efficient as a CVD or PECVD precursor.

Planar Hall Effect of GaMnAs Grown via low Temperature Molecular Beam Epitaxy (저온 분자선에피탁시 방법으로 성장시킨 GaMnAs의 planar Hall 효과)

  • Kim, Gyeong-Hyeon;Park, Jong-Hun;Kim, Byeong-Du;Kim, Do-Jin;Kim, Hyo-Jin;Im, Yeong-Eon;Kim, Chang-Su
    • Korean Journal of Materials Research
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    • v.12 no.3
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    • pp.195-199
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    • 2002
  • Planar Hall effect of ferromagnetic GaMnAs thin films was investigated for the first time. The films were grown in an optimized growth condition via molecular beam epitaxy at low temperatures. For the optimization of the growth conditions, we used reflection high-energy electron diffraction, electrical conductivity, double crystal x-ray diffraction, and superconducting quantum interference device measurements techniques. We observed that the difference between the longitudinal resistance and the transverse resistance matches the planar Hall resistance. The ratio of the planar Hall resistance at saturation magnetic field to that at zero reached above 500%.