• Journal of the Korean Ceramic Society
• /
• v.41 no.1
• /
• pp.9-12
• /
• 2004

The effect of x wt% CuO-y wt% $V_2O_5$ content on the microwave properties of $(Pb_{0.45}Ca_{0.55})[(Fe_{0.5}Nb_{0.5})_{0.9}Sn_{0.1}]O_3$ (PCFNS) ceramics was investigated. In order to decrease the sintering temperature and use as a Low Temperature co-firing Ceramics (LTCC), CuO-$V_2O_5$ are added in the PCFNS. The bulk density, dielectric constant (${\varepsilon}_r$) and quality factor(Q${\cdot}f_0$) increased with increase in CuO content within a limited value. The microwave properties were degraded with increases in $V_2O_5$ content. The temperature coefficient of the resonant frequency (${\tau}_f$) of PCFNS was shifted to positive value abruptly with increasing the $V_2O_5$ content, while the ${\tau}_f$ was slightly shifted to positive value with increasing the CuO content. The optimized microwave properties, ${\varepsilon}_r$ = 88, Q${\cdot}f_0$ = 6100 (GHz), and ${\tau}_f$ = 18 ppm/$^{\circ}C$, were obtained in $(Pb_{0.45}Ca_{0.55})[(Fe_{0.5}Nb_{0.5})_{0.9}Sn_{0.1}]O_3$ with 0.2wt% CuO 0.05 wt% $V_2O_5$ and sintered at $1000^{\circ}C$ for 3 h. The relationship between the microstructure and microwave dielectric properties of ceramics was studied by X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM)

• Korean Journal of Materials Research
• /
• v.13 no.5
• /
• pp.338-342
• /
• 2003

Adhesion between Cu and low-k films has been investigated. Low-k films deposited using a mixture of hexamethyldisilane(HMDS) and Para-xylene had a dielectric constant as low as 2.7, showing the thermally stable properties up to $400^{\circ}C$. In this study, Ti glue layer, boron dopant, and $N_2$plasma treatment were used to improve adhesion property of between Cu and low-k films. Ti glue layer slightly improved adhesion property. After $N_2$plasma treatment, the adhesion property was significantly improved due to the increased roughness and the formation of new binding states between Ti and plasma-treated PPpX : HMDS. However, $300^{\circ}C$ annealing of $N_2$plasma treated sample caused the diffusion of Cu into the PPpX : HMDS, degrading the low-k properties. In the case of Cu(B)/Ti/PPpX : HMDS, the adhesion was remarkably increased. This enhanced adhesion was attributed to formation of Ti-boride at the Cu-Ti interface. It is because the formed Ti-boride prevented the diffusion of Cu into the PPpX : HMDS and the Cu-Ti reaction at the Ti interface.

• Korean Journal of Materials Research
• /
• v.17 no.11
• /
• pp.574-579
• /
• 2007

Amorphous $BaTi_4O_9$ ($BT_4$) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous $BT_4$ film deposited at room temperature showed the film was grown well on the substrate. The amorphous $BT_4$ film had a large dielectric constant of 32, which is similar to that of the crystalline $BT_4$ film. The leakage current density of the $BT_4$ film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the $BT_4$ film with a thickness of <70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ${\geq}96nm$, possibly due to the dipolar relaxation. The 55 nm-thick $BT_4$ film had a high capacitance density of $5.1fF/{\mu}m^2$ with a low leakage current density of $11.6nA/cm^2$ at 2 V. Its quadratic and linear VCCs were $244ppm/V^2$ and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of $961ppm/^{\circ}C$ at 100 kHz. These results confirmed the potential suitability of the amorphous $BT_4$ film for use as a high performance metal-insulator-metal (MIM) capacitor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.5
• /
• pp.397-404
• /
• 2009

Effects of ceramic filler types and dose on the low temperature sintering and dielectric properties of ceramic/$CaO-Al_2O_3-SiO_2$ (CAS) glass composites were investigated. All of the specimens were sintered at $850{\sim}900^{\circ}C$ for 2 h, which conditions are required by the low-temperature co-firing ceramic (LTCC) technology. Ceramic fillers of $CaCO_3$, $Al_2O_3$, $CaCO_3-Al_2O_3$ mixture, and $CaCO_3-Al_2O_3$ compound ($CaAl_2O_4$), respectively, were used. The addition of $Al_2O_3$ yielded the crystalline phase of alumina, which was associated with the inhibition of sintering, while, $CaCO_3$ resulted in no apparent crystalline phase but the swelling was significant. The additions of $CaCO_3-Al_2O_3$ mixture and $CaAl_2O_4$, respectively, yielded the crystalline phases of alumina and anorthite, and the sintering properties of both composites increased with the increase of filler addition and the sintering temperature. In addition, the $CaAl_2O_4$/CAS glass composite, sintered at $900^{\circ}C$, demonstrated good microwave dielectric properties. In overall, all the investigated fillers of 10 wt% addition, except $CaCO_3$, yielded reasonable sintering (relative density, over 93 %) and low dielectric constant (less than 5.5), demonstrating the feasibility of the investigated composites for the application of the LTCC substrate materials.

• Journal of the Korean Ceramic Society
• /
• v.39 no.2
• /
• pp.159-163
• /
• 2002

A single phase perovskite relaxor ferroelectric PMN-PT-BT was prepared by a single calcination and the modified mixed oxide process. It was accomplished by ball-milling PbO, $Nb_2O_5,\;Ti(OC_3H_7)_4,\;BaCO_3,\;and\;Mg(NO_3)_2$ instead of MgO, removing the solvent, and then followed by calcination at 900$^{\circ}C$ for 2h. The specimen sintered at 1100$^{\circ}C$/2h showed the sintered density of 7.83 g/$cm^3$, room temperature dielectric constant of 22000, and dielectric loss of 2.5%. Addition of 1.0 mole% (0.3 wt%) of Ag as $AgNO_3$ and followed by calcination at 550$^{\circ}C$/2h lowered the sintering temperature to 900$^{\circ}C$. It still showed the sintered density of 7.88 g/$cm^3$, room temperature dielectric constant of 20000 and dielectric loss of 2.4%.

• Polymer(Korea)
• /
• v.30 no.6
• /
• pp.492-497
• /
• 2006

The epoxy composites are prepared with mixing temperature of epoxy/montmorillonite (MMT) melt master batch and the dielectric properties of the composites are also compared with intercalation of MMT. The exfoliation mainly occurrs iii the low content of MMT composites, while in the composites with high content of MMT the interspacing distance increases as the mixing temperature of epoxy/MMT master batch is increased. Class transition temperature of the composite which the MMT are effectively exfoliated is increased with the appropriate postcuring condition. Since the orientation polarization of dipoles in the epoxy molecules is restricted by the clay nanolayers exfoliated, the dielectric constant and dielectric loss of the composites are reduced. Furthermore, the dielectric properties could be improved by controling the mixing temperature and time of epoxy/MMT master batch as well as postcuring condition.

• Korean Journal of Materials Research
• /
• v.29 no.8
• /
• pp.469-476
• /
• 2019

A lead-free bulk ceramic having a chemical formula $Ba_{0.8}Ca_{0.2}(Ti_{0.8}Zr_{0.1}Ce_{0.1})O_3$ (further termed as BCTZCO) is synthesized using mixed oxide route. The structural, dielectric, impedance, and conductivity properties, as well as the modulus of the synthesized sample are discussed in the present work. Analysis of X-ray diffraction data obtained at room temperature reveals the existence of some impurity phases. The natural surface morphology shows close packing of grains with few voids. Attempts have been made to study the (a) effect of microstructures containing grains, grain boundaries, and electrodes on impedance and capacitive characteristics, (b) relationship between properties and crystal structure, and (c) nature of the relaxation mechanism of the prepared samples. The relationship between the structure and physical properties is established. The frequency and temperature dependence of the dielectric properties reveal that this complex system has a high dielectric constant and low tangent loss. An analysis of impedance and related parameters illuminates the contributions of grains. The activation energy is determined for only the high temperature region in the temperature dependent AC conductivity graph. Deviation from the Debye behavior is seen in the Nyquist plot at different temperatures. The relaxation mechanism and the electrical transport properties in the sample are investigated with the help of various spectroscopic (i.e., dielectric, modulus, and impedance) techniques. This lead free sample will serve as a base for device engineering.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.34 no.5
• /
• pp.342-347
• /
• 2021

Phase evolution, sintering behavior, microstructure, and microwave dielectric properties of (1-x) mol Ba₃V₄O₁₃ - (x) mol BaV₂O₆ system were investigated. The sintered specimens of all compositions consisted of Ba₃V₄O₁₃ and BaV₂O₆, and no secondary phase was observed. As x increased, the linear shrinkage decreased to the composition of x=0.5, and then increased again, implying that Ba₃V₄O₁₃ and BaV₂O₆ phases interfered mutually with each other during sintering. All compositions showed a dense microstructure with a large grain growth. Cracks were observed in some compositions because of the relatively high sintering temperature of 620~640℃. As x increased, the dielectric constant increased, while the quality factor was maintained from about 50,000 GHz to about 70,000 GHz up to the composition of x=0.9, and then decreased to 20,987~27,180 GHz at the composition of x=1.0. As x increased, the temperature coefficient of the resonance frequency showed a (+) value from a (-) value. The dielectric constant, the quality factor, and the temperature coefficient of resonant frequency of x=0.7 composition sintered at 640℃ for 4 hours were 10.61, 71,126 GHz, and -4.9 ppm/℃, respectively. This composition showed a good chemical compatibility with Al powder, indicating that the Ba₃V₄O₁₃-BaV₂O₆ ceramics are a candidate material for ULTCC (Ultra-Low Temperature Co-fired Ceramics) applications.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.55 no.12
• /
• pp.601-605
• /
• 2006

The resistance-capacitance (RC) delay of signals through interconnection materials becomes a big hurdle for high speed operation of semiconductors which contain multi-layer interconnections in smaller scales with higher integration density. Low-k materials are applied to the inter-metal dielectric (IMD) materials in order to overcome the RC delay. Relaxation continuum (RCT) model that includes neutral-species transport model have developed to model the etching process in a capacitively coupled plasma (CCP) device. We present the parametric study of the modeling results of a two-frequency capacitively coupled plasma (2f-CCP) with $N_2/H_2$ gas mixture that is known as promising one for organic low-k materials etching. For the etching of low-k materials by $N_2/H_2$ plasma, N and H atoms have a big influence on the materials. Moreover the distributions of excited neutral species influence the plasma density and profile. We include the neutral transport model as well as plasma one in the calculation. The plasma and neutrals are calculated self-consistently by iterating the simulation of both species till a spatio-temporal steady state profile could be obtained.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.10 no.5
• /
• pp.680-687
• /
• 1999

An extensive study on miniaturized bandpass filter(BPF) appropriate for mobile communication systems is presented in this paper. The miniaturization has been accomplished by incorporating low-loss high-index materials inside a resonating cavity fabricated in silicon substrate using micromachining etching techniques. By use of materials with dielectric constant $\varepsilon_r$=500, filters with volume less than 0.11 $mm^3$ have been designed at the center frequency of 5.8 GHz with 3.3% bandwidth. The electrical performances and design tolerances of these filters for a variety of materials and shapes are discussed and design guidelines are presented herein.