• 한국전기전자재료학회논문지
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• 제21권6호
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• pp.544-551
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• 2008

We have studied the dielectric characteristics of low-k interlayer dielectric materials fabricated by PECVD for various precursor's flow rates. BTMSM precursor was introduced with the flow rates from 42 sccm to 60 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. The absorption intensities of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group changed synchronously for the variation of precursor flow rate, but the intensity of Si-O-Si(C) responded asynchronously with the $CH_x$ combined bonds. The heat treatment reduced the FTIR absorption intensity of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group but increased the intensity of Si-O-Si(C). The nanopore and free space formed by the increasement of caged link mode and cross link mode of Si-O-Si(C) group implied the origin of low-k SiOCH films.

• 한국전기전자재료학회논문지
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• 제30권7호
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• pp.432-436
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• 2017

IZO transistors with $Al_2O_3$ as gate dielectrics have been investigated. To improve permittivity in an ambient dielectric layer, we grew $Al_2O_3$ by atomic layer deposition directly onto the substrates. Then, we prepared IZO semiconductor solutions with 0.1 M indium nitrate hydrate [$In(NO_3)_3{\cdot}xH_2O$] and 0.1 M zinc acetate dehydrate [$Zn(CH_3COO)_2{\cdot}2H_2O$] as precursor solutions; the IZO solution made with a molar ratio of 7:3 was then prepared. It has been found that these oxide transistors exhibit low operating voltage, good turn-on voltage, and an average field-effect mobility of $0.90cm^2/Vs$ in ambient conditions. Studies of low-voltage driving of IZO transistors with atomic layer-deposited high-k $Al_2O_3$ as gate dielectric provide data of relevance for the potential use of these materials and this technology in transparent display devices and displays.

• E2M - 전기 전자와 첨단 소재
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• 제8권5호
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• pp.587-593
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• 1995

Silicone oils used insulating substances exhibit the both of organic and inorganic properties, and it has many superior characteristics such as the high thermal resistance and low thermal oxidation level when compared to other insulation oils. In order to investigate the dielectric loss due to the increase of viscosity, silicone oils of viscosity 1, 2, 5[cSt] had been chosen as the specimen and experiment has been performed in the temperature range of -70[.deg. C] - 65[.deg. C] and frequency range of 30 - 1*10$\^$5/[Hz]. As a result, the linear decrease of loss at low frequency region in high temperature was due to the influence of applying frequency, whereas the increase of loss at high frequency region was contributed by electrode's resistance. And increasing viscosity, the activation energy increased from 3.77[kcal/mole] to 7.21[kcal/mole]. The dipole moment of specimen was become clear 1.48 - 2.26[debyel in high temperature region(5 - 65[.deg. C]) and 1.05 - 1.80[debye] in low temperature region (-70 - -25[.deg. C])respectively.

• Transactions on Electrical and Electronic Materials
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• 제14권6호
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• pp.329-333
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• 2013

SiOC films were prepared by capacitively coupled plasma chemical vapor deposition, and the correlation between the binding energy by X-ray photoelectron spectroscopy and Arrhenius equation for ionization energy was studied. The ionization energy decreased with increase of the potential barrier, and then the dielectric constant also decreased. The binding energy decreased with increase of the potential barrier. The dielectric constant and electrical characteristic of SiOC film was obtained by Arrhenius equation. The dielectric constant of SiOC film was decreased by lowering the polarization, which was made from the recombination between opposite polar sites, and the dissociation energy during the deposition. The SiOC film with the lowest dielectric constant had a flat surface, which depended on how carbocations recombined with other broken bonds of precursor molecules, and it became a fine cross-linked structure with low ionization energy, which contributed to decreasing the binding energy by Si 2p, C 1s electron orbital spectra and O 1s electron orbital spectra. The dielectric constant after annealing decreased, owing to the extraction of the $H_2O$ group, and lowering of the polarity.

• E2M - 전기 전자와 첨단 소재
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• 제9권9호
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• pp.900-905
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• 1996

We have investigated dielectric properties of low fired ceramics BiNbO$_{4}$ containing 0.05[wt%] V$_{2}$O$_{5}$ and x[wt%l Cr$_{2}$O$_{3}$ (x=0, 0.2, 0.4, 0.8, 1.2). By substituting Cr for Bi, dielectric constant .epsilon.$_{r}$ and quality factor Q.f increased and temperature coefficient of resonant frecquency .tau.$_{f}$ changed to positive value. In the composition of BiNbO$_{4}$+0.05 [Wt%] V$_{2}$O$_{5}$+0.8[wt%]Cr$_{2}$O$_{3}$ sintered at 960[.deg. C], we could obtain microwave dielectric properties of .epsilon.$_{r}$=49, Q.f.simeq.3000[GHz](at 4.8[GHz]), .tau.$_{f}$.simeq.0[ppm/.deg. C]. As the above ceramics can be sintered near 960[.deg. C], it is applicable to multilayer microwave device with Ag conductor.tor.tor.tor.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.664-666
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• 2008

Low-temperature curable organic insulator was prepared through blending of polyimide type base resin and cross-linking agent. The newly developed resin can be formed into films using a wet process and cured at $130^{\circ}C$. Using the low temperature cured film as the gate dielectric layer, the field effect mobility of $0.15\;cm^2/V{\cdot}s$ was obtained from a pentacene field effect transistor in the saturation regime and no hysteresis behavior was observed in transfer curves.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권5호
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• pp.185-190
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• 2002

Capacitor material utilized in the downsizing passive devices and dynamic random access memory(DRAM) requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. Common capacitor materials, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$,TaN and et al., used until recently have reached their physical limits in their application to several hundred angstrom scale capacitor. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25 ~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism, design and fabrication for $Ta_2O_{5}$ film capacitor. This study presents the structure-property relationship of reactive-sputtered $Ta_2O_{5}$ MIM capacitor structure processed by annealing in a vacuum. X-ray diffraction patterns skewed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-$Ta_2O_{5}$ in 670, $700^{\circ}C$ annealing. On 670, $700^{\circ}C$ annealing under the vacuum, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. and the leakage current behavior is stable irrespective of applied electric field. The results states that keeping $Ta_2O_{5}$ annealed at vacuum gives rise to improvement of electrical characteristics in the capacitor by reducing oxygen-vacancy and the broken bond between Ta and O.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.161-161
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• 2009

Ion bombarded inorganic materials for LC alignment has been researched as it provides controllability in a nonstop process for producing high-resolution displays. Many optically transparent insulators such as $SiOx$ and a-C:H have been investigated as potential candidates for inorganic alignment materials. Even so, LC orientation on a new material with superior capacity is required to produce high-performance displays. Many inorganic materials with high permittivities can reduce the voltage losses due to the LC alignment layer that are a trade-off for its capacitance. The minimum voltage for device operation can be applied to the LC under low external voltage using these materials. This means that low power consumption for LCD applications can be achieved using a high-k alignment structure in which the LC can be driven effectively with a low threshold voltage. Among the many other potential high-k oxides, HfO2 is considered to be one of the most promising due to its remarkable properties of high dielectric constant, relatively low leakage current, large band gap (5.68 eV), and high transparency. Due to these characteristics, HfO2 can be used in LC alignment to increase the capacitance of the inorganic alignment layer for low-voltage driving of LCs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.75-82
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• 1999

TE$_{01\;{\delta}}$ mode Cavity Resonators with a low loss dielectric rod and YBa$_2Cu_3O_{7-{\delta}}$ (YBCO) endplates were prepared and their microwave properties were studied at temperatures above 30 K. Both sapphire and rutile were used as the dielectrics. The TE$_{01\;{\delta}}$ mode Q$_0$ of the resonator, designed to work as a tunable resonator with variations in the gap distance (s) between the dielectric rod and the top YBCO, was more than 1000000 at s = 0 mm and at 30 K and .the resonant frequency of 19.56GHz when a sapphire rod was used for the dielectric. The TE$_2Cu_3O_{7-{\delta}}$ mode resonant frequency (f$_0$) appeared to decrease as the temperature is raised. Meanwhile, the temperature dependence of the TE$_2Cu_3O_{7-{\delta}}$ mode f$_0$ of the rutile-loaded resonator appeared different with f$_0$ increasing according to the temperature and Q$_0$ more than 300000 at 30 K and f$_0$ = 8.56 CHz. Comparisons were made between the microwave properties of the sapphire-loaded and the rutile-loaded resonators. Also, applications of the TE$_2Cu_3O_{7-{\delta}}$ mode cavity resonator for a tunable resonator with a very high Q$_0$ as · well as a characterization tool for surface resistance measurements of HTS films are described.