• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.129-132
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• 1992

Rutile was among the first dielectric materials used. However, rutile exhibits a very high temperature coefficient of capacitance (about -750[ppm/$^{\circ}C$]) which resticts its practical application. Since this first use of titania, other materials have also been studied with the object of decreasing the temperature dependence whilst retaining favorable dielectric loss, Q, and relative permittivity. The temperature coefficient of temperature compensation capacitor is +100~750[ppm/$^{\circ}C$], dielectric constant 10~150. Low loss ceramics with dielectric constants in the 10～150 range also found application. Recently, their applications are extended in EMI filter and dielectric materials for microwave. There temperature coefficient of dielectric materials approaches 0[ppm/$^{\circ}C$]. The dielectric preperties of zirconia titanate ceramics prepared by addition of $Ta_2O_{5}$ were investigated.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.725-727
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• 2009

Lowering the dielectric constant is one of the important issues for the efficiency and the power consumption in the plasma display panel (PDP) industry. This study examined the effect of the addition of ceramic filler (up to 10% of crystalline and amorphous silica, respectively) to a $B_2O_3$-ZnO- $P_2O_5$ glass matrix on the dielectric, coefficient of thermal expansion, etching behaviors and residual stress for the barrier ribs in plasma display panels. The dielectric constant of barrier ribs is affected by containing two types of $SiO_2$ filler for the barrier rib composition in PDP.

• 한국재료학회지
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• 제2권4호
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• pp.263-269
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• 1992

본 실험에서는 낮은 음의 온도계수를 갖는 저온 소결 유전체에 대해 연구하였다. 새로 개발된 재료의 조성은 Ti$O_2$(100-X) CuOx(X=1~5wt%)에 미량의 Mn$O_2$를 첨가 하였다. CuO를 첨가하지 않은 경우에는 저온 (90$0^{\circ}C$) 에서 소결이 진행되지 않았다. CuO 함량이 증가할수록 저온에서 소결이 가능하였으나, 유전율이 낮아지고 유전손실은 증가 하였다. Mn$O_2$를 0.6wt% 첨가한 경우 유전율과 Q값이 가장 높게 나타났다.

• 한국세라믹학회지
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• 제45권1호
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• pp.48-53
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• 2008

In order to reduce signal delay in ULSI, an intermetal material of low dielectric constant is required. Ordered mesoporous silica film is proper to intermetal dielectric due to its low dielectric constant and superior mechanical properties. The ordered mesoporous silica film prepared by TEOS (tetraethoxysilane) / MTES (methyltriethoxysilane) mixed silica precursor and Brij-76 surfactant was surface-modified by HMDS (hexamethyldisilazane) treatment to reduce its dielectric constant. HMDS can substitute $-Si(CH_3)_3$ groups for -OH groups on the surface of silica wall. In order to modify interior silica wall, HMDS was treated by two different processes except the conventional spin coating. One process is that film is dipped and stirred in HMDS/n-hexane solution, and the other process is that film is exposed to evaporated HMDS. Through the investigation with different HMDS treatment, it was concluded that surface modification in evaporated HMDS was more effective to modify interior silica wall of nano-sized pores.

• Journal of Information Display
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• 제2권3호
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• pp.39-43
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• 2001

The glass compositions of $PbO-SiO_2-B_2O_3$ system and $P_2O_5-PbO-ZnO$ system for the transparent dielectric materials for front panel and $P_2O_5$-ZnO-BaO and $SiO_2-ZnO-B_2O_3$ for the reflective dielectric materials for back panel of PDP (Plasma Display Panel) were investigated. As a result, transparent dielectric materials for front panel showed good dielectric properties, high transparency, and proper thermal expansion matching to soda lime glass substrate. And the reflective dielectric layers for back panel were prepared from two series of parent glass and oxide filler. It was found that these glassceramics are useful materials for dielectric layers in PDP device, as they have similar thermal expansion to soda-lime glass plate, high reflectance, and low sintering temperature. In particular, the addition of $BPO_4$ and $TiO_2$ as fillers to $SiO_2-ZnO-B_2O_3$ system is considered to be the most effective for acquiring good properties of lower dielectric layer for PDP device.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 추계학술발표회
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• pp.45-45
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• 1996

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.157-158
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• 2000

In this study, to get the larger drain current of the device under the same operation condition as the conventional gate dielectric SiNx thin film transistor devices, we introduced new gate dielectric $Ta_2O_5$ thin film which has high dielectric constant $({\sim}25)$ and good electrical reliabilities. For the application for the TFT device, we fabricated the $Ta_2O_5$ gate dielectric TFT on the low-temperature-transformed polycrystalline silicon thin film using the self-aligned implantation processing technology for source/drain and gate doping. The $Ta_2O_5$ gate dielectric TFT showed better electrical performance than SiNx gate dielectric TFT because of the higher dielectric constant.

• 마이크로전자및패키징학회지
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• 제9권3호
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• pp.57-67
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• 2002

반도체 칩의 신호처리속도를 향상시키기 위한 방법에는 세 가지가 있다. 첫 번째 방법은 금속배선의 배치(layout)를 바꾸는 것이고, 두 번째 방법은 배선으로 사용되는 금속의 비저항을 감소시키는 것이며, 세 번째 방법은 절연재료(insulating material)의 유전상수(dielectric constant)를 감소시키는 것이다. 첫 번째나 두 번째의 방법에 대해서는 많은 연구가 이루어졌고, 지금도 연구가 이루어지고 있다. 그러나 첫 번째나 두 번째의 방법을 통하여 얻을 수 있는 신호처리속도의 향상보다는 세 번째 방법을 통하여 얻을 수 있는 신호처리속도의 향상이 더 크다. 본 논문에서는 먼저 마이크로전자에 응용되기 위한 절연재료의 요구조건을 살펴보고, 지금까지 개발된 저유전율 고분자재료들을 간략하게 소개할 예정이다. 아울러 유전상수를 낮추기 위하여 최근 개발된 기공을 갖는 고분자재료들과 이들을 제조하기 위한 공정에 대해서도 간략하게 소개할 예정이다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1092-1095
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• 2005

The effect of the dielectric constant (${\varepsilon}$) of bonding materials in screen-printed carbon nanotube cathode on field enhancement factor was investigated using the ANSYS software for high-efficient CNT-cathodes. The field enhancement factor increased with decreasing the dielectric constant and reaching a maximum value when the dielectric constant is 1, the value for a vacuum. This indicates that the best bonding materials for screen-printing CNT cathodes should have a low dielectric constant and this can be used as criteria for selecting bonding materials for use in CNT pastes for high-efficient CNT-cathodes

• 한국세라믹학회지
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• 제40권4호
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• pp.350-353
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• 2003

Millimeter-wave dielectric ceramics have been used like applications for ultrahigh speed wireless LAN because it reduces the resources of electromagnetic wave, and Intelligent Transport System (ITS) because of straight propagation wave. For millimeterwave, the dielectric ceramics with high quality factor (Q$.$f), low dielectric constant($\varepsilon$), and nearly zero temperature coefficient of resonant frequency ($\tau$) are needed. No microwave dielectric ceramics with these three properties exist except Ba(Mg$\_$1/3/Ta/sub1/3/)O$_3$ (BMT), which has a little high s: In this paper, alumina (Al$_2$O$_3$) and fosterite (Mg$_2$SiO$_4$), candidates for millimeter-wave applications, were studied with an objective to get high q$.$f and nearly zero $\tau$$\_$f/ For alumina ceramics, q$.$f more than 680,000 GHz was obtained but it was difficult to obtain nearly zero Qf. On the other hand, for forsterite ceramics, q$.$f was achieved from 10,000 GHz of commercial for sterite to 240,000 GHz of highly purified MgO and SiO$_2$ raw materials, and $\tau$$\_$f/ was reduced a few by adding TiO$_2$ with high positive $\tau$$\_$f/.