• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.8
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• pp.1873-1878
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• 2013

ITZO ($In_2O_3$ : $SnO_2$ : ZnO = 90wt.% : 5wt.% : 5wt.%) thin films were fabricated on glass substrates (Eagle 2000) at room temperature with various working pressures (1~7 mTorr) by RF magnetron sputtering. The influence of the working pressure on the structural, electrical, and optical properties of the ITZO thin films were investigated. The XRD and FESEM results showed that all ITZO thin films are amorphous structures with very smooth surfaces regardless of the working pressure. Amorphous ITZO thin films deposited at 3 mTorr showed the best properties, such as a low resistivity, high transmittance, and figure of merit of $3.08{\times}10^{-4}{\Omega}{\cdot}cm$, 81 %, and $10.52{\times}10^{-3}{\Omega}^{-1}$, respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.319-325
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• 1999

Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.2
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• pp.208-212
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• 2013

Dye-sensitized solar cells (DSCs) have taken much attention due to their low cost and easy fabrication method compare to silicon solar cells. But research on cost effective DSC is prerequisite for commercialization. Fluorine doped tin oxide (FTO) which have been commonly used for electrode substrate as electron collector occupied most percentage of manufacturing cost. Therefore we studied FTO-less DSC using sputtered Ti deposited glass as photoelectrode instead of FTO to reduce manufacturing cost. Ti films sputtered on the glass for different time, 5 to 20 minutes with decreasing sheet resistance as deposition time increases. A light source illuminated to counter electrode in order to overcome opaque Ti films. The efficiency of DSC (Ti20) made Ti sputtered glass for 20 min as photoelectrode was 5.87%. There are no significant difference with conventional cell despite lower manufacturing cost.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.380-381
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• 2007

This paper reports on the deposition conditions and properties of ITO films used as electrode layer in a organic light emitting diodes on a PET substrate. The deposition technique employed was specially designed roll-to-roll sputtering. The oxide was deposited at room temperature in an argon and oxygen plasma on a transparent conducting ITO layer on a PET film. The influence of deposition parameters such as DC power, working pressure and oxygen partial pressure has been investigated, in order to obtain the best compromise between a high deposition rate and adequate electro-optical properties. Electrical and optical properties of ITO films were analyzed by Hall measurement examinations with van der pauw geometry at room temperature and UV/Vis spectrometer analysis, respectively. In addition, the structural properties and surface smoothness were measured by x-ray diffraction and scaning electron microscopy, respectively. From optimized ITO films grown by roll-to-roll sputter system, good electrical$(6.44{\times}10^{-4}\;{\Omega}-cm)$ and optical(above 86 % at 550 nm) properties were obtained. Also, the ITO films exhibited amorphous structure and very flat surface beacause of low deposition temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.379-380
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• 2007

The characteristics of a co-sputtered indium zinc tin oxide (IZTO) films prepared by dual target dc magnetron sputtering from IZO and ITO targets at a room temperature are investigated. Film properties, such as sheet resistance, optical transmittance, surface work function and surface roughness were examined as a function of ITO dc power at constant IZO dc power of 100 W. It was shown that the increase of the ITO dc power during co-sputtering of ITO and IZO target resulted in an increase of sheet resistance of the IZTO films. This can be attributed to high resistivity of ITO film prepared at room temperature. Surface smoothness and roughness were investigated by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The synchrotron x-ray scattering results obtained from IZTO film with different ITO contents showed that introduction of ITO atoms into amorphous IZO film resulted in a crystallization of IZTO film with (222) preferred orientation due to low alc transition temperature of ITO film. However, the transmittance of the IZTO films with thickness of 150 nm is between 80 and 85 % at wavelength of 550 nm regardless of ITO content. Possible mechanism to explain the ITO and IZO co-sputtering effect on properties of IZTO is suggested.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.292-292
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• 2007

To apply PDP panel, Soda lime glass(SLG) is cheeper than Non-alkali glass and PD-200 glass but has problems such as low strain temperature and ion diffusion by alkali metal oxide. In this paper suggest the methode that prohibits ion diffusion by deposing barrier layer on SLG. Indium thin oxide(ITO) thin films and barrier layers were prepared on SLG substrate by Rf-magnetron sputtering. These films show a high electrical resistivity and rough uniformity as compared with PD-200 glass due to the alkali ion from the SLG on diffuse to the ITO film by the heat treatment. However these properties can be improved by introducing a barrier layer of $SiO_2\;or\;Al_2O_3$ between ITO film and SLG substrate. The characteristics of films were examined by the 4-point probe, SEM, UV-VIS spectrometer, and X-ray diffraction. GDS analysis confirmed that barrier layer inhibited Na and Ka ion diffusion from SLG. Especially ITO films deposited on the $Al_2O_3$ barrier layer had higher properties than those deposited on the $SiO_2$ barrier layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.430-430
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• 2007

In this study, the nematic liquid crystal (NLC) alignment effects treated on the ZnO thin film layers using ion beam irradiation were successfully studied for the first time. The ZnO thin films were deposited on indium-tin-oxide (ITO) coated glass substrates by rf-sputter and The ZnO thin films were deposited at the three kinds of rf power. The used DuoPIGatron type ion beam system, which can be advantageous in a large area with high density plasma generation. The ion beam parameters were as follows: energy of 1800 eV, exposure time of 1 min and ion beam current of $4\;mA/cm^2$ at exposure angles of $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, and $60^{\circ}$. The homogeneous and homeotropic LC aligning capabilities treated on the ZnO thin film surface with ion beam exposure of $45^{\circ}$ for 1 min can be achieved. The low pretilt angle for a NLC treated on the ZnO thin film surface with ion beam irradiation for all incident angles was measured. The good LC alignment treated on the ZnO thin film with ion beam exposure at rf power of 150 W can be measure. For identifying surfaces topography of the ZnO thin films, atomic force microscopy (AFM) was introduced. After ion beam irradiation, test samples were fabricated in an anti-parallel configuration with a cell gap of $60{\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.450-450
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• 2006

Organic light-emitting diodes (OLED) as pixels for flat panel displays are being actively pursued because of their relatively simple structure, high brightness, and self-emitting nature [1, 2]. The top-emitting diode structure is preferred because of their geometrical advantage allowing high pixel resolution [3]. To enhance the performance of TOLEDs, it is important to deposit transparent top cathode films, such as transparent conducting oxides (TCOs), which have high transparency as well as low resistance. In this work, we report on investigation of the characteristics of an indium tin oxide (ITO) cathode electrode, which was deposited on organic films by using a radio-frequency magnetron sputtering method, for use in top-emitting organic light emitting diodes (TOLED). The cathode electrode composed of a very thin layer of Mg-Ag and an overlaying ITO film. The Mg-Ag reduces the contact resistivity and plasma damage to the underlying organic layer during the ITO sputtering process. Transfer length method (TLM) patterns were defined by the standard shadow mask for measuring specific contact resistances. The spacing between the TLM pads varied from 30 to $75\;{\mu}m$. The electrical properties of ITO as a function of the deposition and annealing conditions were investigated. The surface roughness as a function of the plasma conditions was determined by Atomic Force Microscopes (AFM).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.235-235
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• 2013

공정의 단순함과 낮은 전력을 사용하여 구동이 가능한 장점을 가진 무기물 나노입자를 포함한 무기물/유기물 나노복합체를 사용한 비휘발성 메모리의 전기적 성질에 대한 연구가 많이 진행되고 있다. 다양한 나노입자를 포함한 고분자 박막에 대한 연구는 많이 진행되었지만, InP/CdSe 코어쉘 나노입자가 고분자 박막에 분산되어 있는 나노복합체를 사용하여 제작한 비휘발성 메모리 소자의 전기적 성질과 소자의 안전성에 대한 연구는 미흡하다. 본 연구에서는 고분자 박막 안에 분산되어 있는 InP/CdSe 코어쉘 나노입자를 사용한 메모리 소자를 제작하여 전기적 성질과 소자의 안정성에 대한 관찰을 하였다. 화학적으로 세척된 indium-tin-oxide (ITO)가 코팅된 유리 기판 위에 InP/CdSe 코어쉘 나노입자와 절연성 고분자가 혼합된 용액을 스핀코팅 방법으로 도포하여 박막을 형성하여 활성층으로 사용하였다. 형성된 박막 위에 Al 상부 전극을 고진공에서 열 증착 방식을 이용하여 ITO/InP/CdSe 코어쉘 나노입자가 분산된 절연성 고분자층/Al 구조를 갖는 메모리 소자를 제작하였다. 제작된 소자의 전류-전압 특성을 측정한 결과 동일 전압에서 전도도가 좋은 상태 (low resistance states; LRS)와 좋지 않은 상태 (high resistance states; HRS)인 두개의 상태가 존재하는 걸 확인하였다. LRS 또는 HRS 변화를 일으키는 일정 전압을 가하기 전까지는 각각의 LRS 또는 HRS를 계속 유지하여 비휘발성 메모리 소자로서의 활용 가능성을 보여주었다. LRS 또는 HRS의 안정성을 확인하기 위해 LRS 또는 HRS의 스트레스 실험으로 관측하였다. 제작된 메모리 소자의 실험 결과를 바탕으로 전하수송 메커니즘을 설명하였다.

• Korean Journal of Materials Research
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• v.26 no.2
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• pp.84-89
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• 2016

We present the rectifying and nitrogen monoxide (NO) gas sensing properties of an oxide semiconductor heterostructure composed of n-type zinc oxide (ZnO) and p-type copper oxide thin layers. A CuO thin layer was first formed on an indium-tin-oxide-coated glass substrate by sol-gel spin coating method using copper acetate monohydrate and diethanolamine as precursors; then, to form a p-n oxide heterostructure, a ZnO thin layer was spin-coated on the CuO layer using copper zinc dihydrate and diethanolamine. The crystalline structures and microstructures of the heterojunction materials were examined using X-ray diffraction and scanning electron microscopy. The observed current-voltage characteristics of the p-n oxide heterostructure showed a non-linear diode-like rectifying behavior at various temperatures ranging from room temperature to $200^{\circ}C$. When the spin-coated ZnO/CuO heterojunction was exposed to the acceptor gas NO in dry air, a significant increase in the forward diode current of the p-n junction was observed. It was found that the NO gas response of the ZnO/CuO heterostructure exhibited a maximum value at an operating temperature as low as $100^{\circ}C$ and increased gradually with increasing of the NO gas concentration up to 30 ppm. The experimental results indicate that the spin-coated ZnO/CuO heterojunction structure has significant potential applications for gas sensors and other oxide electronics.