• Title/Summary/Keyword: low tin

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Effect of Tin Addition on the Melting Temperatures and Mechanical Properties of Al-Si-Cu Brazing Filler Metals (저온 브레이징용 Al-Si-Cu 합금의 Sn 첨가에 따른 융점 및 기계적 특성 변화 연구)

  • Kim, Min Sang;Park, Chun Woong;Byun, Jong Min;Kim, Young Do
    • Korean Journal of Materials Research
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    • v.26 no.7
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    • pp.376-381
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    • 2016
  • For the development of a low-melting point filler metal for brazing aluminum alloy, we analyzed change of melting point and wettability with addition of Sn into Al-20Cu-10Si filler metal. DSC results showed that the addition of 5 wt% Sn into the Al-20Cu-10Si filler metal caused its liquidus temperature to decrease by about 30 oC. In the wettability test, spread area of melted Al-Cu-Si-Sn alloy is increased through the addition of Sn from 1 to 5 wt%. For the measuring of the mechanical properties of the joint region, Al 3003 plate is brazed by Al-20Cu-10Si-5Sn filler metal and the mechanical property is measured by tensile test. The results showed that the tensile strength of the joint region is higher than the tensile strength of Al 3003. Thus, failure occurred in the Al 3003 plate.

The Effects of Antimony and Tin Addition on the wear resistance properties of ductile cast iron (구상흑연주철의 내마모성에 미치는 Sb 및 Sn 의 영향에 관한 연구)

  • Kwon, Young-Hoon;Kim, Chang-Gyu;Kim, Buk-Suk;Kim, Sung-Han;Cheon, Byung-Wook;Choi, Chang-Ock
    • Journal of Korea Foundry Society
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    • v.11 no.6
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    • pp.463-474
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    • 1991
  • The effect of $0.01{\sim}0.10%$ Sb and Sn on the wear resistance of ductile cast iron was investigated. The hardness was increased with Sb to 0.10%, but the elongation and the impact value were decreased. The tensile strength was increased with up to 0.05% Sb, however decreased with $0.05{\sim}0.10%$ Sb. The hardness and the tensile strength were increased and the elongation was decreased with up to 0.10% Sn. The nodularity of graphite was decreased with above 0.08% Sb however Sn had no effect on that. When the maximum compressive stress was low ($42kg.f/mm^2$), the weigth loss was decreased with increased hardness and when that was high ($54kg.f/mm^2$ and $65kg.f/mm^2$), the weight loss did not depend upon the hardness. The pearlite stabilization with Sb and Sn increased with the wear resistance of ductile cast iron.

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EFFECT OF TIN COATING OF ABUTMENT SCREW ON DETORQUE FORCE

  • Kim, Hee-Jung;Choe, Han-Cheol;Chung, Chae-Heon
    • The Journal of Korean Academy of Prosthodontics
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    • v.45 no.3
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    • pp.329-338
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    • 2007
  • Purpose. The aim of this study is to evaluate the effect of TiN coating of abutment screw on the unscrewing torque. Material and methods. Titanium and Gold-Tite abutment screws were classified into two groups, Group A and C respectively, as control groups. Titanium abutment screws with TiN coatings were also classified into two groups, Group B and D, as experimental ones. Group A and B were tightened to 20 Ncm input torque, and Group C and D were tightened to 32 Ncm torque. Detorque values were measured with digital torque gauge during repeated closing and opening experiment. Results. Abutment screws with TiN coating (Group B and D) showed statistically significant higher mean detorque values than those of Group A and C. Discussion. Physical properties of TiN coating, such as low friction coefficient, high hardness and wear resistance, might contribute to higher detorque values. Conclusion. It is suggested that TiN coating of abutment screw help to reduce the risk of screw loosening and improve the stability of screw joint.

Effects of Hole-Injection Buffer Layer in Organic Light-Emitting Diodes (유기 발광 소자에서 정공 주입 버퍼층의 효과)

  • 정동희;김상걸;오현석;홍진웅;이준웅;김영식;김태완
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.9
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    • pp.816-825
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    • 2003
  • Current-voltage-luminance characteristics of organic light-emitting diodes (OLEDs) were measured in the temperature range of 10 K~300 K. Indium-tin-oxide (ITO) was used as an anode and aluminum as a cathode in the device. Organic of N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) was used for a hole transporting material, and tris (8-hydroxyquinolinato) aluminum (Alq$_3$) for an electron transporting material and emissive material. And copper phthalocyanine (CuPc), poly(3,4-ethylenedi oxythiophene);poly(styrenesulfonate) (PEDOT:PSS), and poly(N-vinylcarbazole) (PVK) were used for hole-injection buffer layers. From tile analysis of electroluminescence (EL) and photoluminesccnce (PL) spectra of the Alq$_3$, the EL spectrum is more greenish then that of PL. And the temperature-dependent current-voltage characteristics were analyzed in the double and multilayer structure of OLEDS. Electrical conduction mechanism was explained in the region of high-electric and low-electric field. Temperature-dependent luminous efficiency and operating voltage were analyzed from the current-voltage- luminance characteristics of the OLEDS.

BSL2 Audit and Certification Program: An Effort to Harmonize and to Raise Standards in Both Laboratory Infrastructure and Biosafety Practices in Singapore

  • Tin, Tun;Lee, Kien Wah
    • Biomedical Science Letters
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    • v.22 no.3
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    • pp.65-74
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    • 2016
  • The critical aspects of biosafety and bio-containment have been increasingly important in recent years. Biological agents involved in biological research projects at the Nanyang Technological University (NTU) Singapore are usually those with low risks. Biosafety level 2 or BSL 2 laboratories are widely used. However, biosafety measures which refer to the implementation of laboratory practices and procedures, specific construction features of laboratory facilities and safety equipment must be in place to reduce the exposure of laboratory personnel, the public or the environment to potentially infectious agents or other biological hazards. It is also required to pay more attention to laboratory-acquired infections (LAIs) which may occur in research laboratories, clinical laboratories or animal facilities. BSL 2 audit and certification program is implemented as an internal exercise covering laboratories in the university where biological agents are handled or biological research works are carried out. We have put some efforts to raise biosafety standards university-wide in both laboratory infrastructure and laboratory practices to a higher level. Common audit findings are briefly discussed in this presentation.

Thin Metal Electrodes for Semitransparent Organic Photovoltaics

  • Lee, Kyu-Sung;Kim, Inho;Yeon, Chang Bong;Lim, Jung Wook;Yun, Sun Jin;Jabbour, Ghassan E.
    • ETRI Journal
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    • v.35 no.4
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    • pp.587-593
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    • 2013
  • We demonstrate semitransparent organic photovoltaics (OPVs) based on thin metal electrodes and polymer photoactive layers consisting of poly(3-hexylthiophene) and [6,6]-phenyl $C_{61}$ butyric acid methyl ester. The power conversion efficiency of a semitransparent OPV device comprising a 15-nm silver (Ag) rear electrode is 1.98% under AM 1.5-G illumination through the indium-tin-oxide side of the front anode at 100 $mW/cm^2$ with 15.6% average transmittance of the entire cell in the visible wavelength range. As its thickness increases, a thin Ag electrode mainly influences the enhancement of the short circuit current density and fill factor. Its relatively low absorption intensity makes a Ag thin film a viable option for semitransparent electrodes compatible with organic layers.

Dependance on Metal Electrode of Poly(3-hexylthiophene) EL Device (Poly(3-hexylthiophene) 발광소자의 금속전극 의존성)

  • 서부완;김주승;김형곤;이경섭;구할본
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.162-165
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    • 2000
  • To investigate the effect of metal electrode in electroluminescent[EL] devices, we fabricated EL devices of ITO/P3HT/Al, ITO/P3HT/LiF/Al and ITO/P3HT/Mg:In structure. In current-voltage-light power characteristics, turn-on voltage of EL devices using LiF insulating layer and Mg:In(2.8V) metal electrode is lower than EL device using Al(4.2V). Besides the external quantum efficiency is improved also. The reason is related to carrier mobility and carrier injection, which would affect the hole-electron balance. In the device with Al electrode, holes injected from indium-tin-oxide[ITO] to poly(3-hexylthiophene)[P3HT] might reach the Al electrode without interacting with injected electrons, because the electron injection efficiency was very low for this electrode. Besides oxidation of the Al electrode is likely due to holes reaching the cathode without meeting injected electrons. Another possible reason for the higher EL efficiency may be the insulating layer playing the role of a tunneling barrier for holes to the Al electrode. In all EL devices, the orange-red light was clearly visible in a dark room. Maximum peak wavelength of EL spectrum emitted at 640nm in accordance with photon energy 1.9eV

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Electroluminescent Properties of Organic Light-emitting Diodes with Hole-injection Layer of CuPc

  • Lee, Jung-Bok;Lee, Won-Jae;Kim, Tae-Wan
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.1
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    • pp.41-44
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    • 2014
  • Emission properties of the organic light-emitting diodes were investigated with the use of a hole-injection layer of copper(II)-phthalocyanine (CuPc). The manufactured device structure is indium-tin-oxide (ITO) (180 nm)/CuPc (0~50 nm)/N,N'-Bis(3-methylphenyl)-N,N'-diphenylbenzidine (TPD) (40 nm)/tris-(8-hydroxyquinoline) aluminum (III) ($Alq_3$) (60 nm)/Al(100 nm). We investigated the luminescence properties of $Alq_3$ which is affected by the CuPc hole-injection layer. Also, we studied the influence of light-emission properties in the structure of an ITO/CuPc/TPD/$Alq_3$/Al device depending on the several thicknesses of CuPc (0~50 nm) layer. As a result, it was found that the hole injection occurs smoothly in the device with 20 nm thick CuPc layer, and the properties become significantly worse in the device with a CuPc layer thickness higher than 40 nm. We studied the topography and external quantum efficiency depending on the layer thickness of CuPc. Also, we analyzed the electroluminescent characteristics in the low and high-voltage range.

Fast Responding Gas Sensors Using Sb-Doped SnO2 Nanowire Networks (Sb-첨가 SnO2 나노선 네트워크를 이용한 고속응답 가스센서)

  • Kwak, Chang-Hoon;Woo, Hyung-Sik;Lee, Jong-Heun
    • Journal of Sensor Science and Technology
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    • v.22 no.4
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    • pp.302-307
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    • 2013
  • The Sb-doped $SnO_2$ nanowire network sensors were prepared by thermal evaporation of the mixtures between tin and antimony powders. Pure $SnO_2$ nanowire networks showed high sensor resistance in air ($99M{\Omega}$), similar gas responses to 4 diffferent gases (5 ppm $C_2H_5OH$, CO, $H_2$, and trimethylamine), and very sluggish recovery speed (90% recovery time > 800 s). In contrast, 2 wt% Sb-doped $SnO_2$ showed the selective detection toward $C_2H_5OH$ and trimethylamine, relatively low resistance ($176k{\Omega}$) for facile measurement, and ultrafast recovery speed (90% recovery times: 6 - 18 s). The change of gas sensing charactersitics by Sb doping was discussed in relation to gas sensing mechanism.

Dyeing with Natural Dye (II) ―Dyeing of Silk with Sappan Wood― (천연염료에 의한 염색(II) ―소목에 의한 견염색―)

  • Nam, Sung Woo;Chung, In Mo;Kim, In Hoi
    • Textile Coloration and Finishing
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    • v.7 no.4
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    • pp.87-96
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    • 1995
  • Colorant concentrates are prepared by use of concentration method of colorants extracted from Sappan wood using met hanol. Dyeabilities and fastness properties of silk fabrics dyed with concentrate of Sappan wood are investigated.The results obtained are as follows; 1. The storage stability of colorant concentrate is poor as concentration is excess. 2. Because the colors of dyeings are different with mordants, aluminium acetate, copper acetate, chromium alum and tin chloride are used in order to obtain reddish color. 3. The optimum dyeing temperature and dyeing time are 6$0^{\circ}C$ and 60 min, respectively. 4. Dry cleaning fastness is very good, and light fastness and washing fastness are low. 5. The dyeing method is simple owing to usehess of colorant concentrate prepared without extraction of colorant every time.

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