• Journal of Technologic Dentistry
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• v.34 no.2
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• pp.83-93
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• 2012

Purpose: The objective of this study is to find out physical properties and the flexural strength changed by the low temperature degradation of the block which is needed to make bio-prosthetic dentistry which is better than feldspar affiliated ceramic made by building up ceramic powder and also to apply this to the clinical use of zirconia monolithic all-ceramic crown. Methods: Flexural strength of each sample was evaluated before and after the Low Temperature Degradation, and physical properties of the Tetra Zirconia Block containing 3mol % was evaluated as well. The average and standard deviation of each experimental group were came out of the evaluation. Statistical package for social science 18.0 was used for statistics. Results: The average density of the monolithic all-ceramic crown was $6.0280{\pm}0.0147g/cm$, the relative density was 99.01 %. When the sample was sintered at $1480^{\circ}C$ the diameter of average particle was $396.62{\pm}33.71nm$. All the samples had no monolithic peak after XRD evaluation but only had tetragonal peak. There were statistically significant differences in the result of flexural strength of the samples evaluated after and before the low temperature degradation, the flexural strength before the low temperature degradation was $1747.40{\ss}{\acute{A}}$, at the temperature of $130^{\circ}C$ the flexural strength after the low temperature degradation was 1063.99MPa (p<0.001). There was statistically significant difference in the result of strength of 1020.07MPa after the low temperature degradation at the temperature of $200^{\circ}C$ (p<0.001). Conclusion: The block which was made for this evaluation possesses such an excellent strength among dental restorative materials that it is thought to have no problems to use for tetragonal zirconia polycrystal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.281-281
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• 2007

Low Temperature Co-fired Ceramic (LTCC) technology has been used in electronic device for various functions. LTCC technology is to fire dielectric ceramic and a conductive electrode such as Ag or Cu thick film below the temperature of $900^{\circ}C$ simultaneously. The glass-ceramic has been widely used for LTCC materials due to its low sintering temperature, high mechanical properties and low dielectric constants. To obtain the high strength, addition of filler, the microstructure should have various crystals and low pores in a composite. In this study, two glass frits were mixed with different alumina size(0.5, 2, 3.7um) and sintered at the range of $850{\sim}950^{\circ}C$. The microstructure, crystal phases, thermal and mechanical properties of the composites were investigated using FE-SEM, XRD, TG-DTA, Dilatomer. When the particle size of $Al_2O_3$ filler increased, the starting temperatures for the densification of the sintered bodies, onset point of crystallization, peak crystallization temperature in the glass-ceramic composites decreased gradually. After sintered at $900^{\circ}C$, the glass frits were crystallized as $CaAl_2Si_2O_8\;and\;CaMgSi_2O_6$. The purpose of our study is to understand the relationship between the $Al_2O_3$ particle size and thermal properties in composites.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.397-404
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• 2009

Effects of ceramic filler types and dose on the low temperature sintering and dielectric properties of ceramic/$CaO-Al_2O_3-SiO_2$ (CAS) glass composites were investigated. All of the specimens were sintered at $850{\sim}900^{\circ}C$ for 2 h, which conditions are required by the low-temperature co-firing ceramic (LTCC) technology. Ceramic fillers of $CaCO_3$, $Al_2O_3$, $CaCO_3-Al_2O_3$ mixture, and $CaCO_3-Al_2O_3$ compound ($CaAl_2O_4$), respectively, were used. The addition of $Al_2O_3$ yielded the crystalline phase of alumina, which was associated with the inhibition of sintering, while, $CaCO_3$ resulted in no apparent crystalline phase but the swelling was significant. The additions of $CaCO_3-Al_2O_3$ mixture and $CaAl_2O_4$, respectively, yielded the crystalline phases of alumina and anorthite, and the sintering properties of both composites increased with the increase of filler addition and the sintering temperature. In addition, the $CaAl_2O_4$/CAS glass composite, sintered at $900^{\circ}C$, demonstrated good microwave dielectric properties. In overall, all the investigated fillers of 10 wt% addition, except $CaCO_3$, yielded reasonable sintering (relative density, over 93 %) and low dielectric constant (less than 5.5), demonstrating the feasibility of the investigated composites for the application of the LTCC substrate materials.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2003.04a
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• pp.31-36
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• 2003

Recently, composite materials are widely used for nozzle, pressure vessel, skins of satellite and many structures under condition of high temperature due to good thermal characteristics such as low CTE, heat-resistance, etc. Fiber optic sensors, especially FBG(fiber Bragg grating) sensors, can be a good counterproposal of strain gages for the measurement of material properties of composites under high temperature. In this research, T700/Epoxy specimens with embedded FBG sensors were fabricated and tested at the Instron with thermal chamber from room temperature to $400^{\circ}C$. The effects of embedding optical fiber on material properties were also verified. And, the experimental results were discussed and analyzed by microphotographs of the composite specimen.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.40 no.7
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• pp.670-674
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• 1991

This paper presents the material properties of LPCVD silicon films formed using Si2H6 gas at various deposition temperatures. To study the structural properties depending on the deposition temperature, XRD, EBD and TEM analyses were used. The maximum grain size in this experiment was obtained at the deposition temperature of 485ø C. It is discussed that LPCVD films formed below the deposition temperature of 485ø C are promising for low temperature TFT applications. The enhancement of the film characteristics results from the reduction of grain boundary density. We also observed that the film properties of Si2H6 at 600ø C was quite different from those of Si H4 at 600ø C. It has shown that the grain structure from a TEM analysis was elliptical and not dependent on the deposition temperature.

• Korean Journal of Metals and Materials
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• v.47 no.10
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• pp.629-634
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• 2009

The effects of processing parameters on the surface properties of the hardened layers processed by the low temperature plasma nitrocarburizing and the low temperature two-step plama treatment (carburizing+nitriding) were investigated. The nitrogen-enriched expanded austenite structure (${\gamma}_N$) or S phase was formed on all of the treated surface. The surface hardness reached up to 1200 $HV_{0.025}$, which is about 5 times higher than that of untreated sample (250 $HV_{0.1}$). The thickness of hardened layer of the low temperature plasma nitrocarburized layer treated at $400^{\circ}C$ for 40 hour was only $15{\mu}m$, while the layer thicknesss in the two-step plama treatment for the 30 hour treatment increased up to about $30{\mu}m$. The surface thickness and hardness increased with increasing treatment temperature and time. In addition, the corrosion resistance was enhanced than untreated samples due to a high concentration of N on the surface. However, higher treatment temperature and longer treatment time resulted in the formation of $Cr_2N$ precipitates, which causes the degradation of corrosion resistance.

• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.262-264
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• 2014

Pristine ZnO, 3 wt.% Ga-doped (3GZO) and 3 wt.% Ag-doped (3SZO) ZnO nanowires (NWs) were grown using the hot-walled pulse laser deposition (HW-PLD) technique. The doping of Ga and Ag in ZnO NWs was observed by analyzing the optical and chemical properties. We optimized the synthesis conditions, including processing temperature, time, gas flow, and distance between target and substrate for the growth of pristine and doped ZnO NWs. The diameter and length of pristine and doped ZnO NWs were controlled under 200 nm and several ${\mu}m$, respectively. Low temperature photoluminescence (PL) was performed to observe the optical property of doped NWs. We clearly observed the shift of the near band edge (NBE) emission by using low temperature PL. In the case of 3GZO and 3SZO NWs, the center photon energy of the NBE emissions shifted to low energy direction using the Burstein Moss effect. A strong donor-bound exciton peak was found in 3 GZO NWs, while an acceptor-bound exciton peak was found in 3SZO NWs. X-ray photoelectron spectroscopy (XPS) also indicated that the shift of binding energy was mainly attributed to the interaction between the metal ion and ZnO NWs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.425-430
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• 2004

In this paper, in order to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, PMN-PZT ceramics were manufactured with the variations of sintering times, and their microstructural, piezoelectric and dielectric properties were investigated. To manufacture multilayer piezoelectric transformer, the low temperature sintering composition is need, hence, $Li_2CO_3$ and $Bi_2O_3$ were used as sintering aids and the specimens were sintered during 30, 60, 90, 120, 150 and 180 minutes, respectively. At the specimen sintered during 90 minute, mechanical quality factor(Qm), electromechanical coupling factor(kp) and dielectric constant were showed the optimum values of 2356, 0.504 and 1266, respectively. All the specimens showed tetragonality phase, and pyrochlore phase was not shown.

• Journal of the Korean institute of surface engineering
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• v.37 no.3
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• pp.146-151
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• 2004

Indium tin oxide (ITO) is widely used to make a transparent conducting film for various display devices and opto-electric devices. In this study, ITO films on glass substrate were fabricated by inductively coupled plasma (ICP) assisted dc magnetron sputtering. A two-turn rf coil was inserted in the process chamber between the substrate and magnetron for the generation of ICP. The substrates were not heated intentionally. Subsequent post-annealing treatment for as-deposited ITO films was not performed. Low-temperature deposition technique is required for ITO films to be used with heat sensitive plastic substrates, such as the polycarbonate and acrylic substrates used in LCD devices. The surface roughness of the ITO films is also an important feature in the application of OLEDs along with the use of a low temperature deposition technique. In order to obtain optimum ITO thin film properties at low temperature, the depositions were carried out at different condition in changing of Ar and $O_2$ gas mixtures, ICP power. The electrical, optical and structural properties of the deposited films were characterized by four-point probe, UV/VIS spectrophotometer, atomic force microscopy(AFM) and x-ray diffraction (XRD). The electrical resistivity of the films was -l0$^{-4}$ $\Omega$cm and the optical transmittance in the visible range was ＞85%. The surface roughness ( $R_{rms}$) was -20$\AA$.>.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1039-1043
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• 2007

In this paper, in order to develop low temperature sintering ceramics for multilayer piezoelectric actuator application, PMN-PZN-PZT ceramics were fabricated using $LiCO_3,\;Bi_2O_3$ and CuO as sintering aids. And also, their piezoelectric and dielectric properties were investigated according to the milling time. All the specimens sintered at $930\;^{\circ}C$ showed tetragonal phases without secondary phases. With increasing milling time, piezoelectric and dielectric characteristic of specimens increased up to 60 hours milling time and then decreased due to the agglomeration of fine particle. Accordingly, it seems that 60 hour is optimum milling condition. At the sintering temperature of $930\;^{\circ}C$ and milling time of 60 hour, density, dielectric constant(${\varepsilon}_r$), electromechanical coupling factor (kp), mechanical quality factor (Qm), piezoelectric d constant showed the optimum value of $7.95\;g/m^3$, 1382, 0.546, 1749, 330 pC/N, respectively for multilayer piezoelectric actuator application.