• 한국표면공학회지
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• 제50권4호
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• pp.272-276
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• 2017

The response of AISI 310 type austenitic stainless steel to the novel low temperature plasma carburizing process has been investigated in this work. This grade of stainless steel shows better corrosion resistance and high temperature oxidation resistance due to its high chromium and nickel content. In this experiment, plasma carburizing was performed on AISI 310 stainless steel in a D.C. pulsed plasma ion nitriding system at different temperatures in $H_2-Ar-CH_4$ gas mixtures. The working pressure was 4 Torr (533Pa approx.) and the applied voltage was 600 V during the plasma carburizing treatment. The hardness of the samples was measured by using a Vickers micro hardness tester with the load of 100 g. The phase of carburized layer formed on the surface was confirmed by X-ray diffraction. The resultant carburized layer was found to be precipitation free and resulted in significantly improved hardness and corrosion resistance.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.44.2-44.2
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• 2009

Polycrystalline materials suchas yttria and alumina have been applied as a plasma resisting material for the plasma processing chamber. However, polycrystal line material may easily generate particles and the particles are sources of contamination during the plasma enhanced process. Amorphous material can be suitable to prevent particle generation due to absence of grain-boundaries. We manufactured nitrogen-containing $SiO_2-Al_2O_3-Y_2O_3$ based glasses with various contents of silicon and fixed nitrogen content. The thermal properties, mechanical properties and plasma etching rate were evaluated and compared for the different composition samples. The plasma etching behavior was estimated using XPS with depth profiling. From the result, the plasma etching rate highly depends on the silicon content and it may results from very low volatile temperature of SiF4 generated during plasma etching. The silicon concentration at the plasma etched surface was very low besides the concentration of yttrium and aluminum was relatively high than that of silicon due to high volatile temperature of fluorine compounds which consisted with aluminum and yttrium. Therefore, we conclude that the samples having low silicon content should be considered to obtain low plasma etching rate for the plasma resisting material.

• Elastomers and Composites
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• 제34권4호
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• pp.315-320
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• 1999

점착성과 소수성을 제거함으로써 실리콘 EVD 튜브의 성능을 향상시키기 위하여 저온 플라스마 공정을 이용한 실리콘 고무의 표면개질을 시도하였다. 고분자를 형성하지 않는 플라스마를 이용한 표면처리와 고분자를 형성하는 플라스마를 이용한 박막코팅 방법을 시도하였다. 박막코팅을 할 경우에 점착성이 특히 크게 줄어들었으며, 결과적으로 실험실 환경에서의 오염 정도를 줄일 수 있었다. 산소를 포함한 플라스마를 이응할 경우 튜브의 외부뿐만 아니라 내부의 표면을 친수성으로 개질시킴으로써, 결과적으로 수력학적 초기 저항을 줄일 수 있었다. 대부분의 경우에 있어서, 이러한 표면개질은 실리콘 튜브의 기계적 물성에 아무런 악영향을 끼치지 않았으며 영율, 인장강도, 인장율 등의 물성은 오히려 향상되었다.

• 한국해양공학회지
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• 제25권1호
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• pp.56-60
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• 2011

A low temperature plasma carburizing process was performed to AISI 304L austenitic stainless steel to achieve the enhancement of surface hardness without a compromise in their corrosion resistance. Attempts were made to investigate the influence of the processing temperatures on the surface-hardened layer during low temperature plasma carburizng in order to obtain the optimum processing conditions. The expanded austenite (${\gamma}C$) was formed on all the treated surfaces. Precipitates of chromium carbides were detected in the hardened layer (C-enriched layer) only for the specimen treated at $500^{\circ}C$. The hardened layer thickness of ${\gamma}C$ increased up to about $35\;{\mu}m$, with increasing treatment temperature. The surface hardness reached about 1000 $HK_{0.05}$, which is about 4 times higher than that of the untreated sample (250 $HK_{0.05}$). Minor loss in corrosion resistance was observed for the specimens treated at temperatures of $310^{\circ}C-450^{\circ}C$ compared with untreated austenitic stainless steel. Particularly, the precipitation of chromium carbides at $500^{\circ}C$ led to a significant decrease in the corrosion resistance.

• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.976-980
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• 2002

This paper repors on low temperature sealing process of PDP using binder and capping glass. The exhausting hole on rear glass of PDP was sealed by capping glass using screen-printed binder without exhausting glass tube. Based on the tubeless packaging process, out gassing problem could be reduced and vacuum conductance could be improved by eliminating exhaust tube.

• 공업화학
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• 제19권6호
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• pp.640-644
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• 2008

저온 플라스마 공정을 이용하여 알루미늄 표면에 묻은 윤활유를 세정하였다. 아르곤이 혼합된 산소 플라스마를 사용하였으며, 아르곤의 혼합비, 방전전력, negative DC potential 등의 공정변수를 변화시키면서 실험을 수행하였다. 저온 플라스마 세정 후 케이스의 표면을 FTIR과 EDX를 사용하여 분석한 결과 순수 윤활유의 경우 대부분이 20 min 안에 제거되었다. 제거효율은 저온 플라스마 공정조건에 따라 크게 달라졌으며, 산소에 아르곤이 약 30% 혼합된 기체를 사용하여 케이스에 -500 V 이상의 negative DC potential을 걸어주고 300 W로 처리할 때 가장 높은 효율을 보였다. 하지만, 무기물이 함유된 윤활유의 경우에는 어떤 조건에서도 60% 이상의 제거효율을 얻을 수 없었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.144-144
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• 2011

Diagnostics of plasma density and temperature play an important role for monitoring plasma processing and Laser Thomson scattering is a one of the most accurate diagnostic technique for measuring plasma density and temperature because of none-perturbation to plasma among various diagnostic techniques invented to measure plasma density and temperature. I will briefly review Laser Thomson scattering experiment performed in KRISS and difficulties for measuring the electron velocity distribution such as Gaussian due to low signal-to-noise ratio with showing results that we got until now. This work is an intermediate step in a process that we will get a reliable data which shows physical phenomenon of plasma compared with other diagnostic techniques and results.

• 전기학회논문지
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• 제60권10호
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• pp.1895-1902
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• 2011

This work was carried out for the measurement of vibration and rotation temperature using the optical emission spectroscopy of nitrogen second positive system in the small plasma torch. Among emissions $N_2$ SP systems, the emission of $N_2$ SP(0-0) was so strong. Emission peaks of SP system increased until the position of 12.5[mm] from the end of plasma torch, after that it decreased. However, vibration temperature decreased from 1540[K] to 1000[K] at the position of 12.5[mm]. In addition, rotational temperature was about 400[K] at the position of 10[mm] and it increased a little as much of 420[K] at 12.5[mm]. Consequently, the plasma torch discussed in this work is possible to apply in the surface treatment process under the low temperature.

• Journal of Welding and Joining
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• 제8권3호
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• pp.60-69
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• 1990

Plasma arc cutting is a fusion cutting process in which a gas-constricted arc is employed to produce a high-temperature, high-velocity plasma jet on the workpiece. This process provides some advantages such as increased cutting velocity, excellent working accuracy and the ability to cut special materials (widely used stainless steels and Al-alloys, for example), when compared with iconventional oxyfuel gas cutting. From the view point of price and reliability of the power source, plasma arc cutting has also some distinct advantages over laser beam cutting. High-speed machines with NC or CNC systems are needed for the plasma arc or laser beam cutting process, while for oxyfuel gas cutting, low-speed machines with copying templates or optical-shape tracking sensors can be applied. The low price and high flexibility of the microprocessor arc contributing more and more the application of CNC system in the plasma arc cutting process, as in other manufacturing fields. From these points of view, a microprocessor-based plasma arc cutting system was developed by using a reference-pulse system, and its performance was tested. The interpolating routines were programmed in the assembly language for saving the memory volume and improving the compouting speed, which has an intimate relationship with the available cutting velocity.

• Journal of Information Display
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• 제11권3호
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• pp.109-112
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• 2010

The solid phase compositions and dielectric properties of silicon nitride ($SiN_x$) films prepared using the plasma enhanced chemical vapor deposition (PECVD) technique at a low temperature ($200^{\circ}C$) were studied. Controlling the source gas mixing ratio, R = $[N_2]/[SiH_4]$, and the plasma power successfully produced both silicon-rich and nitrogen-rich compositions in the final films. The composition parameter, X, varied from 0.83 to 1.62. Depending on the film composition, the dielectric properties of the $SiN_x$ films also varied substantially. Silicon-rich silicon nitride (SRSN) films were obtained at a low plasma power and a low R. The photoluminescence (PL) spectra of these films revealed the existence of nano-sized silicon particles even in the absence of a post-annealing process. Nitrogen-rich silicon nitride (NRSN) films were obtained at a high plasma power and a high R. These films showed a fairly high dielectric constant ($\kappa$ = 7.1) and a suppressed hysteresis window in their capacitance-voltage (C-V) characteristics.