• 한국분말재료학회지
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• 제30권5호
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• pp.436-441
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• 2023

Molybdenum-tungsten (Mo-W) alloy sputtering targets are widely utilized in fields like electronics, nanotechnology, sensors, and as gate electrodes for TFT-LCDs, owing to their superior properties such as high-temperature stability, low thermal expansion coefficient, electrical conductivity, and corrosion resistance. To achieve optimal performance in application, these targets' purity, relative density, and grain size of these targets must becarefully controlled. We utilized nanopowders, prepared via the Pechini method, to obtain uniform and fine powders, then carried out spark plasma sintering (SPS) to densify these powders. Our studies revealed that the sintered compacts made from these nanopowders exhibited outstanding features, such as a high relative density of more than 99%, consistent grain size of 3.43 ㎛, and shape, absence of preferred orientation.

• 한국재료학회지
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• 제9권2호
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• pp.155-162
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• 1999

Zirconia thin films of uniform structure were fabricated by plasma-enhanced metal-organic chemical vapor deposition. Deposition conditions such as substrate temperature were observed to have much influence on the formation of zirconia films, therefore the mechanism of decomposition of $Zr[TMHD]_4$precursor and film growth were examined by XRD, FT-IR etc., as well as the determination of the optimal deposition condition. From temperature dependence on zirconia, below the deposition temperature of 523K, the amorphous zirconia was formed while the crystalline of zirconia with preferred orientation of cubic (200) was obtained above the temperature. Deposits at low temperatures were investigated by FT-IR and the absorption band of films revealed that the zirconia thin film was in amorphous structure and has the same organic band as that of Zr precursor. In case of high temperature, it was found that Zr precursor was completely decomposed and crystalline zirconia was obtained. In addition, at 623K the higher RF power yielded the increased crystallinity of zirconia implying an increase in decomposition rate of precursor. However, it seems that RF power has nothing with the zirconia deposition process at 773K. It was found that the proper bubbler temperature of TEX>$Zr[TMHD]<_4$ precursor is needed along with high flow rate of carrier gas. Through AFM analysis it was determined that the growth mechanism of the zirconia thin film showed island model.

• Design & Manufacturing
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• 제15권3호
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• pp.7-12
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• 2021

Plastic injection molds used for rapid heating and cooling must minimize surface damage due to friction and maintain excellent thermal and low electrical conductivity. Accordingly, various surface treatments are being applied. The properties of Al₂O₃ coating and DLC coating were compared to find the optimal surface treatment method. Al₂O₃ coating was deposited by thermal spray method. DLC films were deposited by sputtering process in room temperature and high temperature PECVD (Plasma enhanced chemical vapor deposition) process in 723 K temperature. For the evaluation of physical properties, the electrical and thermal conductivity including surface hardness, adhesion and wear resistance were analyzed. The electrical resistance of the all coated samples was showed insulation properties of 24 MΩ/sq or more. Especially, the friction coefficient of high temp. DLC coating was the lowest at 0.134.

• 산업기술연구
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• 제19권
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• pp.331-341
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• 1999

We analyzed theoretically the removal efficiency and the particle growth inside the pulse corona discharge reactor to remove $NO_x$ and investigated the effects of process variables such as the NO and $NH_3$ input concentrations. Most of NO is converted into $NO_2$ and $HNO_3$ and the $HNO_3$ reacts with $NH_3$ to form the $NH_4NO_3$ particles. About 6.4% of NO is converted into $HNO_2$ which form the $NH_4NO_2$ particles by reaction with $NH_3$. Some of $NO_2$ follows the reaction pathway to form $NO_3$ and $N_2O_5$. The amount of particles formed inside the reactor is basically determined by the input $NH_3$ concentration. The ratio of NO to $NH_3$ affects the reactor length for particle formation significantly. The higher the input concentrations of NO and $NH_3$ are, the faster the particles grow.

• 한국표면공학회지
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• 제39권3호
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• pp.98-104
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• 2006

Al-doped ZnO (AZO) films were deposited on the plastic substrate by inductively coupled plasma (ICP) assisted DC magnetron sputtering. The AZO films were produced by sputtering a metallic target (Zn/Al) in a mixture of argon and oxygen gases. AZO films with an electrical resistivity of ${\sim}10^3\;{\Omega}cm$ and an optical transmittance of 80% were obtained even at a low deposition temperature. In-situ process control methods were used to obtain stable deposition conditions in the transition region without any hysteresis effect. The target voltage was controlled either at a constant DC power. It was found that the ratio of the zinc to oxygen emission intensity, I (O 777)/I (Zn 481) decreased with increasing the target voltage in the transition region. The $Ar/O_2$ plasma treatment improve the adhesion strength between the polycarbonate substrate and AZO films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.105-105
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• 2009

$ZrO_2$ is one of the most attractive high dielectric constant (high-k) materials. As integrated circuit device dimensions continue to be scaled down, high-k materials have been studied more to resolve the problems for replacing the EY31conventional $SiO_2$. $ZrO_2$ has many favorable properties as a high dielectric constant (k= 20~25), wide band gap (5~7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2/Si$ structure. In order to get fine-line patterns, plasma etching has been studied more in the fabrication of ultra large-scale integrated circuits. The relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compound In this study, the surface kinetic properties of $ZrO_2$ thin film was investigated in function of Ch addition to $BCl_3/Ar$ gas mixture ratio, RF power and DC-bias power based on substrate temperature. The figure 1 showed the etch rate of $ZrO_2$ thin film as function of gas mixing ratio of $Cl_2/BCl_3/Ar$ dependent on temperature. The chemical state of film was investigated using x-ray photoelectron spectroscopy (XPS). The characteristics of the plasma were estimated using optical emission spectroscopy (OES). Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• 한국전기전자재료학회논문지
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• 제33권5호
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• pp.367-372
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• 2020

As packaging processes for atomic gyroscope vapor cells, the glass tube tip-off process, anodic bonding, and paste sealing have been widely studied. However, there are stability issues in the alkali metal which are caused by impurity elements and leakage during high-temperature processes. In this study, we investigated the applicability of a vapor cell low-temperature packaging process by depositing Au on a Pyrex cell in addition to forming an Au-Sn thin film on a cap to cover the cell, followed by laser irradiation of the Au/Au-Sn interface. The mechanism of the thin film bonding was evaluated by XRD, while the packaging reliability of an Ne gas-filled vapor cell was characterized by variation of plasma discharge behavior with time. Furthermore, we confirmed that the Rb alkaline metal inside the vapor cell showed no color change, indicating no oxidation occurred during the process.

• Journal of Advanced Marine Engineering and Technology
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• 제41권3호
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• pp.238-244
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• 2017

플라즈마 이온질화 기술은 특히 스테인리스강의 표면경도 향상을 통한 기계적 성질 개선을 위해 산업 전반에서 널리 사용되고 있다. 또한 저온처리가 가능할 뿐만 아니라 담금질 강, 가스 질화 또는 침탄에 비해 변형이 적으며, 높은 표면 경도와 부식 저항성을 향상시키는 이점이 있다. 많은 연구자들에 의해 $450^{\circ}C$ 이하의 온도에서 플라즈마 이온질화 처리 시 expanded austenite(S-상)에 의해 부식 저항성이 향상되는 것으로 나타났다. 이때 대부분의 실험은 HCl 또는 NaCl과 같은 염화물 용액에서 실시되었다. 그러나 전기화학적인 요인으로서 염화물 용액과 천연해수 사이에는 차이가 있다. 따라서 본 연구에서는 304 스테인리스강에 대하여 다양한 온도에서 플라즈마 이온질화 처리 후 천연해수 용액에서 전기화학적 특성 분석을 통해 결과적으로 내식성이 가장 우수한 최적의 플라즈마 이온질화 처리 온도 조건을 규명하였다.

• Transactions on Electrical and Electronic Materials
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• 제7권5호
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• pp.267-270
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• 2006

The Indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. ITO thin films deposited at room temperature because CR39 substrates its glass-transition temperature of is $130^{\circ}C$. ITO thin films used bottom and top electrode and for organic thin film transparent transistor.(OTFT) ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300 - 800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300 - 800 nm) measured without post annealing process and $9.83{times}10{-4}{\Omega}cm$ a low resistivity was measured thickness of 300 nm.

• 한국재료학회지
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• 제17권4호
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• pp.232-235
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• 2007

Indium tin oxide (ITO) films were deposited on polycarbonate CR39 substrate using DC magnetron sputtering. ITO thin films were deposited at room temperature because glass-transition temperature of CR39 substrate is $130^{circ}C$ ITO thin films are used as bottom and top electrodes and for organic thin film transparent transistor (OTFT). The electrodes electrical properties of ITO thin films and their optical transparency properties in the visible wavelength range (300-800 nm) strongly depend on the volume of oxygen percent. The optimum resistivity and transparency of ITO thin film electrode was achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85% transparency in the visible wavelength range (300-800 nm) was measured without post annealing process, and resistivity as low as $9.83{\times}^{TM}10^{-4}{\Omega}$ cm was measured at thickness of 300 nm.