• Journal of Radiopharmaceuticals and Molecular Probes
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• v.1 no.1
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• pp.31-37
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• 2015

Chelating agents 1,4,7-triazacyclononanetriacetic acid (NOTA), 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraacetic acid (DOTA) and 30-amino-3,14,25-trihydroxy-3,9,14,20,25-penta-azatriacontane-2,10,13,21,24-pentaone (desferrioxamine, DFO) were labeled with $^{68}Ga$ and tested in vitro properties to check the feasibility of using DFO as a bifunctional chelating agent or renal imaging agent. The chelating agents of concentration $2{\mu}M$ were labeled with $^{68}Ga$ in 0.1 M HCl at pH 1.7-10.3 at room temperature and $80^{\circ}C$ and the optimal pH for labeling each chelating agent was found. And then, the chelating agents were labeled with $^{68}Ga$ in various concentration of chelating agents at optimal pH. The labeled chelating agents were subject to stability test in human serum and to binding studies to human red blood cell (RBC) and plasma protein. The optimal pH's of NOTA, DOTA and DFO for $^{68}Ga$-labeling were 4.4, 3.6 and 5.6, respectively. DFO ($10{\mu}M$) showed high labeling efficiency (>97%) at pH 5.6. All the labeled chelating agents showed high stability in human serum. $^{68}Ga$-DFO showed low RBC binding but significant amount was bound to plasma protein. The results demonstrated that $^{68}Ga$-DFO can be used as a bifunctional chelating agent but not as a renal imaging agent.

• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.120-126
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• 2004

A damage-reduced trench was investigated in view of the defect distribution along trench sidewall and bottom using high resolution transmission electron microscopy, which was formed by HBr plasma and additive gases in magnetically enhanced reactive ion etching system. Adding $O_2$ and other additive gases into HBr plasma makes it possible to eliminate sidewall undercut and lower surface roughness by forming the passivation layer of lateral etching. To reduce the RIE induced damage and obtain the fine shape trench corner rounding, we investigated the hydrogen annealing effect after trench formation. Silicon atomic migration on trench surfaces using high temperature hydrogen annealing was observed with atomic scale view. Migrated atoms on crystal surfaces formed specific crystal planes such as (111), (113) low index planes, instead of fully rounded comers to reduce the overall surface energy. We could observe the buildup of migrated atoms against the oxide mask, which originated from the surface migration of silicon atoms. Using this hydrogen annealing, more uniform thermal oxide could be grown on trench surfaces, suitable for the improvement of oxide breakdown.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1037-1041
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• 2001

Silicon diosixde thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) method, at a low temperature (32$0^{\circ}C$) and from (SiH$_4$+$N_2$O) gas mixtures. The effects of deposition parameters on properties of SiO$_2$thick films were investigated by variation of $N_2$O/SiH$_4$flow ratio and RF power. As the $N_2$O/SiH$_4$flow ratio decreased, deposition rate increased from 2.9${\mu}{\textrm}{m}$/h to maximum 10.1${\mu}{\textrm}{m}$/h. As the RF power increased from 60 W to 120 W, deposition rate increased (5.2~6.7 ${\mu}{\textrm}{m}$/h) and refractive index approached at thermally grown silicon dioxide (n=1.46).

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.652-658
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• 2016

Gadolinium zirconate, $Gd_2Zr_2O_7$, is one of the most versatile oxides among the new thermal-barrier-coating (TBC) materials for replacing conventional yttira-stabilized zirconia (YSZ). $Gd_2Zr_2O_7$ exhibits excellent properties, such as low thermal conductivity, high thermal expansion coefficient comparable with that of YSZ, and chemical stability at high temperature. In this study, bulk and coating specimens with $Gd_{2-x}Zr_{2+x}O_{7+0.5x}$ (x = 0.0, 0.5, 1.0) compositions were fabricated in order to examine the characteristics of this gadolinium zirconate system with different Gd content for TBC applications. Especially, coatings with $Gd_{2-x}Zr_{2+x}O_{7+0.5x}$ (x = 0.0, 0.5, 1.0) compositions were produced by suspension plasma spray (SPS) with suspension of raw powder mixtures prepared by planetary milling followed by ball milling. Phase formation, microstructure, and thermal diffusivity were characterized for both sintered and coated specimens. Single phase materials with pyrochlore or fluorite were fabricated by normal sintering as well as SPS coating. In particular, coated specimens showed vertically-separated columnar microstructures with thickness of $400{\sim}600{\mu}m$.

• Journal of Veterinary Clinics
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• v.38 no.6
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• pp.299-304
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• 2021

A 3-year-old female Connemara pony was referred to Jeju National University Equine Hospital because of weight loss and prolonged anorexia. On admission, heart and respiratory rates were slightly elevated while body temperature was within the normal range. The color of the conjunctival and oral mucosa was yellowish pink. The blood chemistry results showed that total bilirubin, aspartate aminotransferase, and gamma-glutamyl transferase levels were remarkably elevated while blood urea nitrogen was within the reference range. Transcutaneous abdominal ultrasound revealed an enlarged right lobe of the liver with prominently increased parenchymal echogenicity, reduced hepatic vessels, and rounded caudal border. The pony was tentatively diagnosed with chronic hepatitis and icterus; rest and supportive treatments were provided. Clinical signs aggravated on day 2 with hind quarter paresis and cranial nerve signs such as circling, drooping, jerking, and head pressing against walls. Recumbency and generalized ataxia (grade 5/5) were shown on day 3. Plasma ammonia concentration on day 3 was as high as 656 µmol/L. Necropsy and histopathologic examinations strongly supported a diagnosis of hepatic encephalopathy. This case of hepatic encephalopathy exhibited rapid progress from low to terminal grade within 4 days in a Connemara pony. The results provide well-established clinical and pathological data for future application.

• Korean Journal of Materials Research
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• v.33 no.6
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• pp.242-250
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• 2023

Titanium, which has excellent strength and toughness characteristics, is increasingly used in the aerospace field. Among the titanium alloys used for body parts, more than 80 % are Ti-6Al-4V alloys with a tensile strength of 931 MPa. The spark plasma sintering (SPS) method is used for solidification molding of powder manufactured by the mechanical milling (MM) method, by sintering at low temperature for a short time. This sintering method avoids coarsening of the fine crystal grains or dispersed particles of the MM powder. To improve the mechanical properties of pure titanium without adding alloying elements, stearic acid was added to pure titanium powder as a process control agent (PCA), and MM treatment was performed. The properties of the MM powder and SPS material produced by solidifying the powder were investigated by hardness measurement, X-ray diffraction, density measurement and structure observation. The processing deformation of the pure titanium powder depends on the amount of stearic acid added and the MM treatment time. TiN was also generated in powder treated by MM 8 h with 0.50 g of added stearic acid, and the hardness of the powder was higher than that of Ti-6Al-4V alloy when treated with MM for 8 h. When the MM-treated powder was solidified in the SPS equipment, TiC was formed by the solid phase reaction. The SPS material prepared as a powder treated with MM 8 h by adding 0.50 g of stearic acid also formed TiN and exhibited the highest hardness of Hv1253.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.167-169
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• 2009

We have carried out quantitative structure and property analysis of the nanoporous structures of low dielectric constant (low-k) carbon-doped silicon oxide (SiCOH) films, which were deposited with plasma enhanced chemical vapor deposition (PECVD) using vinyltrimethylsilane (VTMS), divinyldimethylsilane (DVDMS), and tetravinylsilane (TVS) as precursor and oxygen as an oxidant gas. We found that the SiCOH film using VTMS only showed well defined spherical nanopores within the film after thermal annealing at $450^{\circ}C$ for 4 h. The average pore radius of the generated nanopores within VTMS SiCOH film was 1.21 nm with narrow size distribution of 0.2. It was noted that thermally labile $C_{x}H_{y}$ phase and Si-$CH_3$ was removed to make nanopore within the film by thermal annealing. Consequently, this induced that decrease of average electron density from 387 to $321\;nm^{-3}$ with increasing annealing temperature up to $450^{\circ}C$ and taking a longer annealing time up to 4 h. However, the other SiCOH films showed featureless scattering profiles irrespective of annealing conditions and the decreases of electron density were smaller than VTMS SiCOH film. Because, with more vinyl groups are introduced in original precursor molecule, films contain more organic phase with less volatile characteristic due to the crosslinking of vinyl groups. Collectively, the presenting findings show that the organosilane containing vinyl group was quite effective to deposit SiCOH/$C_{x}H_{y}$ dual phase films, and post annealing has an important role on generation of pores with the SiCOH film.

• Particle and aerosol research
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• v.15 no.1
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• pp.1-13
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• 2019

Current desulfurization and denitrification technologies have reached a considerable level in terms of reduction efficiency. However, when compared with the simultaneous reduction technology, the individual reduction technologies have issues such as economic disadvantages due to the difficulty to scale-up apparatus, secondary pollution from wastewater/waste during the treatment process, requirement of large facilities for post-treatment, and increased installation costs. Therefore, it is necessary to enable practical application of simultaneous SOx and NOx treatment technologies to remove two or more contaminants in one process. The present study analyzes a technology capable of maintaining simultaneous treatment of SOx and NOx even at low temperatures due to the electrochemically generated strong oxidation of the wet-pulse complex system. This system also reduces unreacted residual gas and secondary products through the wet scrubbing process. It addresses common problems of the existing fuel gas treatment methods such as SDR, SCR, and activated carbon adsorption (i.e., low treatment efficiency, expensive maintenance cost, large installation area, and energy loss). Experiments were performed with varying variables such as pulse voltage, reaction temperature, chemicals and additives ratios, liquid/gas ratio, structure of the aeration cleaning nozzle, and gas inlet concentration. The performance of individual and complex processes using the wet-pulse discharge reaction were analyzed and compared.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.8-16
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• 2023

The importance of next-generation packaging technologies is being emphasized as a solution as the miniaturization of devices reaches its limits. To address the bottleneck issue, there is an increasing need for 2.5D and 3D interconnect pitches. This aims to minimize signal delays while meeting requirements such as small size, low power consumption, and a high number of I/Os. Hybrid bonding technology is gaining attention as an alternative to conventional solder bumps due to their limitations such as miniaturization constraints and reliability issues in high-temperature processes. Recently, there has been active research conducted on SiCN to address and enhance the limitations of the Cu/SiO₂ structure. This paper introduces the advantages of Cu/SiCN over the Cu/SiO₂ structure, taking into account various deposition conditions including precursor, deposition temperature, and substrate temperature. Additionally, it provides insights into the core mechanisms of SiCN, such as the role of Dangling bonds and OH groups, and the effects of plasma surface treatment, which explain the differences from SiO₂. Through this discussion, we aim to ultimately present the achievable advantages of applying the Cu/SiCN hybrid bonding structure.

• Korean Journal of Metals and Materials
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• v.47 no.5
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.