• Korean Journal of Materials Research
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• v.24 no.10
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• pp.543-549
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• 2014

A zinc oxide (ZnO) hybrid structure was successfully fabricated on a glass substrate by metal organic chemical vapor deposition (MOCVD). In-situ growth of a multi-dimensional ZnO hybrid structure was achieved by adjusting the growth temperature to determine the morphologies of either film or nanorods without any catalysts such as Au, Cu, Co, or Sn. The ZnO hybrid structure was composed of one-dimensional (1D) nanorods grown continuously on the two-dimensional (2D) ZnO film. The ZnO film of 2D mode was grown at a relatively low temperature, whereas the ZnO nanorods of 1D mode were grown at a higher temperature. The change of the morphologies of these materials led to improvements of the electrical and optical properties. The ZnO hybrid structure was characterized using various analytical tools. Scanning electron microscopy (SEM) was used to determine the surface morphology of the nanorods, which had grown well on the thin film. The structural characteristics of the polycrystalline ZnO hybrid grown on amorphous glass substrate were investigated by X-ray diffraction (XRD). Hall-effect measurement and a four-point probe were used to characterize the electrical properties. The hybrid structure was shown to be very effective at improving the electrical and the optical properties, decreasing the sheet resistance and the reflectance, and increasing the transmittance via refractive index (RI) engineering. The ZnO hybrid structure grown by MOCVD is very promising for opto-electronic devices as Photoconductive UV Detectors, anti-reflection coatings (ARC), and transparent conductive oxides (TCO).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.122-122
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• 2010

ZnO is a widely investigated material for the blue and ultraviolet solid-state emitters and detectors. It has been promoted due to a wide-band gap semiconductor which has large exciton binding energy of 60 meV, chemical stability and low radiation damage. However, there are many problems to be solved for the growth of p-type ZnO for practical device applications. Many researchers have made an efforts to achieve p-type conductivity using group-V element of N, P, As, and Sb. In this letter, we have studied the optical characteristics of the antimony-doped ZnO (ZnO:Sb) thin films by means of photoluminescence (PL), PL excitation, temperature-dependent PL, and time-resolved PL techniques. We observed donor-to-acceptor-pair transition at about 3.24 eV with its phonon replicas with a periodic spacing of about 72 meV in the PL spectra of antimony-doped ZnO (ZnO:Sb) thin films at 12 K. We also investigate thermal activation energy and carrier recombination lifetime for the samples. Our result reflects that the antimony doping can generate shallow acceptor states, leading to a good p-type conductivity in ZnO.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2004.03a
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• pp.802-806
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• 2004

For the protection of the local air quality and the global atmosphere, the emissions of trace species including nitric oxides (NO and NO$_2$) from gas turbines are regulated by local governments and by the International Civil Aviation Organization. In-situ measurements of such species are needed not only for the development of advanced low-emission combustion concepts but also for providing emissions data required for the sound assessment of the effects of the emissions on environment. We have been developing a laser absorption system that has a capability of simultaneous determination of NO and NO$_2$concentrations in the exhaust jets from aero gas turbines. A diode laser operating near 1.8 micrometer is used for the detection of NO while a separated visible tunable diode laser operating near 676 nanometers is used for NO$_2$. The sensitivities at elevated temperature conditions were determined for simulated gas mixtures heated up to 500K in a heated cell of a straight 0.5 m optical path. Sensitivity limits estimated as were 30 ppmv-m and 3.7 ppmv-m for NO and NO$_2$, respectively, at a typical exhaust gas temperature of 800K. Experiments using the simulated exhaust flows have proven that $CO_2$ and $H_2O$ vapor - both major combustion products - do not show any interference in the NO or NO$_2$ measurements. The measurement system has been applied to the NO/NO$_2$ measurements in NO and NO$_2$ doped real combustion gas jets issuing from a rectangular nozzle having 0.4 m optical path. The lower detection limits of the system were considerably decreased by using a multipass optical cell. A pair of off-axis parabola mirrors successfully suppressed the beam steering in the combustion gas jets by centralizing the fluctuating beam in sensor area of the detectors.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.461-461
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• 2013

Over the last decade, zinc oxide (ZnO) thin films have attracted considerable attention owing to large band gap of 3.37 eV and large exciton binding energy of 60 meV at room temperature [1-3]. Recent interest in ZnO related researches has been switched into the fabrication and characterization of low-dimensional nanostructures, such as nano-wires and nano-dots that can be applicable to manufacture the optoelectronic devices such as ultraviolet lasers, light-emitting-diodes and detectors. Since the optical properties of ZnO nano-structures might be distinct from those of bulk materials or thin films, the low-dimensional phenomena should be examined further. In order to utilize such advanced optoelectronic devices, one of the challenges is how to control the surface state related emissions that are drastically increased with increasing the density of the nano-structures and the surface-to-volume ratio. This paper reports the synthesis and characterization of self-assembled ZnO hexagonal nano-disks grown by radio-frequency magnetron sputtering. X-ray diffraction data and scanning electron microscopy data showed that ZnO hexagonal nano-disks were nucleated on top of the flat surfaces as the film thickness reached to 1.56 ${\mu}m$ and then the number of nano-disks increased with increasing the film thickness. The lateral size of hexagonal nano-disks was ~720 nm and height was ~74 nm. The strong photo luminescence spectra obtained at 10 K was also observed, which was assigned to a surface exciton emission at 3.3628 eV arising from the surface sites of hexagonal nano-disks.

• Fire Science and Engineering
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• v.24 no.4
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• pp.69-78
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• 2010

In this study, Fire Hazards were evaluated through computer simulation using FDS program for an apartment fire accident. The results of fire simulation showed that the maximum heat release rate in the case of no sprinklers activation was 7,700 kW which was about 16 times of that in the case of sprinklers activation, 497 kW and there was a very high fire hazard due to the backdraft phenomenon when the door of fire room was forced to open. Regarding the hazard time of fire room temperature and detection time of detectors, available evacuation time was 32.5 seconds of minimum to 53.5 seconds of maximum. In the case of sprinklers activation, fire hazard in the apartment was showed to be very low due to the fire control by the spray cooling of sprinklers. This study shows that what a important function for fire safety is the activations of fire sprinkler system and emergency alarm system and what a large loss can cause if these systems don’t activate in fire accidents.

• Journal of IKEEE
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• v.23 no.2
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• pp.743-746
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• 2019

In this paper we proposed a new ocean radiation automatic monitoring system. The proposed system has the following characteristics: First, using NaI + PVT mixed detectors, the response speed is fast and precision analysis is possible. Second, the application of temperature compensation algorithm to scintillator-type sensors does not require additional cooling devices and enables stable operation in the changing ocean environment. Third, since cooling system is not needed, electricity consumption is low, and electricity can be supplied reliably by utilizing solar energy, which can be installed at the observation deck of ocean environment. Fourth, using GPS and wireless communications, accurate location information and real-time data transmission function for measurement areas enables immediate warning response in the event of nuclear accidents such as those involving neighboring countries. The results tested by the authorized testing agency to assess the performance of the proposed system were measured in the range of $5{\mu}Sv/h$ to 15mSv/h, which is the highest level in the world, and the accuracy was determined to be ${\pm}8.1%$, making normal operation below the international standard ${\pm}15%$. The internal environmental grade (waterproof) was achieved, and the rate of variation was measured within 5% at operating temperature of $-20^{\circ}C$ to $50^{\circ}C$ and stability was verified. Since the measured value change rate was measured within 10% after the vibration test, it was confirmed that there will be no change in the measured value due to vibration in the ocean environment caused by waves.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.9
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• pp.58-67
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• 2009

This paper presents a fully digital gain control system with a new high bandwidth and wide dynamic range power detector for DVB-S2 application. Because the peak-to-average power ratio (PAPR) of DVB-S2 system is so high and the settling time requirement is so stringent, the conventional closed-loop analog gain control scheme cannot be used. The digital gain control is necessary for the robust gain control and the direct digital interface with the baseband modem. Also, it has several advantages over the analog gain control in terms of the settling time and insensitivity to the process, voltage and temperature variation. In order to have a wide gain range with fine step resolution, a new AGC system is proposed. The system is composed of high-bandwidth digital VGAs, wide dynamic range power detectors with RMS detector, low power SAR type ADC, and a digital gain controller. To reduce the power consumption and chip area, only one SAR type ADC is used, and its input is time-interleaved based on four power detectors. Simulation and measurement results show that the new AGC system converges with gain error less than 0.25 dB to the desired level within $10{\mu}s$. It is implemented in a $0.18{\mu}m$ CMOS process. The measurement results of the proposed IF AGC system exhibit 80-dB gain range with 0.25-dB resolution, 8 nV/$\sqrt{Hz}$ input referred noise, and 5-dBm $IIP_3$ at 60-mW power consumption. The power detector shows the 35dB dynamic range for 100 MHz input.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.50-50
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• 2008

ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.