• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.248-248
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• 2012

Synthesis graphene on Cu substrate by plasma-enhanced chemical vapor deposition (PE-CVD) is investigated and its quality's affection factors are discussed in this work. Compared with the graphene synthesized at high temperature in chemical vapor deposition (CVD), the low-temperature graphene film by PE-CVD has relatively low quality with many defects. However, the advantage of low-temperature is also obvious that low melting point materials will be available to synthesize graphene as substrate. In this study, the temperature will be kept constant in $400^{\circ}C$ and the graphene was grown in plasma environment with changing the plasma power, the flow rate of precursors, and the distance between plasma generator coil and substrates. Then, we investigate the effect of temperature and the influence of process variables to graphene film's quality and characterize the film properties with Raman spectroscopy and sheet resistance and optical emission spectroscopy.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.28 no.5
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• pp.208-215
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• 2016

This study was conducted to improve the performance of low-temperature vacuum dryer by applying desiccant to cold trap. Performance evaluation was carried out using several desiccants. The amounts of absorption and diffusivity were measured based on analytic model. Results of desiccant performance evaluation revealed that silica-gel had the most excellent performance for conditions of low-temperature vacuum drying process. Silica-gel was applied to cold trap for evaluating the drying performance. The experiment results showed that the drying time was extended as the thickness of sample was increased due to increased heat and mass transfer resistance of drying sample. In addition, as heating plate temperature was increased, drying time was decreased due to increased evaporation pressure of drying sample. Furthermore, drying time with desiccant was decreased approximately 20% than that without desiccant.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.400.2-400.2
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• 2016

Dye-sensitized solar cells (DSSCs) have been widely investigated as a next generation solar cell because of their simple structure and low manufacturing cost. To realize a commercially competitive technology of DSSCs, it is imperative to employ a technique to prepare nanocrystlline thin film on the flexible organic substrate, aiming at increasing the flexibility and reducing the weight as well as the overall device thickness of DSSCs. The key operation of glass-to-plastic substrates conversion is to prepare mesoporous TiO2 thin film at low temperature with a high surface area for dye adsorption and a high degree of crystallinity for fast transport of electrons. However, the electron transport in the TiO2 film synthesized at low temperature is very poor. So, in this study, TiO2 films synthesized at high temperature were transferred on the selective substrate. We fabricated DSSCs at low temperature using this method. So, we confirmed that the performance of DSSCs using TiO2 films synthesized at high temperature was improved.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.302-310
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• 2008

Heat transfer between substrate and substrate-heater in low vacuum was investigated. The convection related with gas flow and pressure, the heat conduction considering surface roughness and contact pressure, and the heat loss by radiation depending on the surface emissivity were considered. The coefficient of heat conduction $h_c$ in the Fourier's law were determined experimentally from the temperature difference between the substrate and the substrate-heater in the range of substrate-heater temperature $100\;-\;500^{\circ}C$, in the pressures of 300 mTorr - 1 Torr. The temperature difference was then calculated in the reverse way for the purpose of verification, using the heat flow and the experimentally determined coefficients. The verified temperature differences were thus obtained within 0.33 % error.

• KIEAE Journal
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• v.16 no.3
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• pp.121-128
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• 2016

Purpose: The vacuum glazing should constantly retain the gap in vacuum state to maintain high thermal performance. To do so, pillars are used to prevent the glazing from clinging to each other by the atmospheric pressure and therefore surface of the vacuum glazing is consistently affected by residual stress. The vacuum glazing could be applied to curtain wall systems at spandrel area to fulfill a rigorous domestic standard on U-value of the external wall. However, this can lead to high glazing temperature increase by heat concentration at a back panel and finally thermal stress breakage. This study experimentally determined weakness of the vacuum glazing systems on the thermal stress breakage and investigated effect of the residual stress. Method: The experiment first built two scale-down mock-up facilities that replicate the spandrel area in curtain wall, and then installed single low-e glass and vacuum glazing respectively. The two mock-up facilities were exposed to outside to induce the thermal stress breakage. Result: The experiment showed that the temperature occurred the thermal stress breakage was $114.4^{\circ}C$ for the single low-e glass and $118.9^{\circ}C$ for the vacuum glazing respectively. The result also showed the vacuum glazing reached the critical point earlier than the single low-e glass, which means that the vacuum glazing has high potential to occur the thermal shock breakage. In addition, the small temperature difference between two glazing indicates that the residual stress scarcely affects breakage of the vacuum glazing.

• Journal of Advanced Marine Engineering and Technology
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• v.26 no.2
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• pp.226-232
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• 2002

In tradition, there have been two kinds of drying methods, which are sun drying and artificial drying. The sun drying method which has been adopted traditionally has been replaced by the hot-air drying method which is one of the most general methods of artificial drying, with its simple drying system, low initial cost of drying plant, and easy operating method. But the hot-air drying method has some defects ; (1)much energy loss happens due to the discharge of hot air during the drying process, (2)control of drying rate is not easy on account of changing relative humidity of inlet air for uniform hot air temperature, (3)high temperature of floods in drying process brings about the production of low-grade drying products. Also, the hot-air drying method is inducing environmental and sanitary problems which are resulting from the emission of high temperature and high humidity air, including stick on the drying progress. Vacuum drying technique, whose drying time and 7uantity of exhausting energy is about 1/3 ~1/4 of hot air drying, is very excellent in the drying efficiency. As the results, it took about 20 hours for material to reach about 18% of the final moisture content in order to store products for a long time, from about 470% of the early moisture content at the beginning of drying, and maximum drying rate comes to about $0.35 kg/m^2hr$ at about 350% of the moisture content.

• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.148-152
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• 1999

the low temperature magnetoresistance effect, electron mobilities, and 2 Dimensional electron Gases (2DEG) properties were investigated in $Si/Si_{1-x}Ge_x$ quantum well devices. N-type $Si/Si_{1-x}Ge_x$ structures were fabricated by utilizing a gas source Molecular Beam Epitaxy (GSMBE). Thermal oxidation was carried out in a dry O atmosphere at $700^{\circ}C$ for 7 hours. Electron mobilities were measured by using a Hall effect and a magnetoresistant effect at low temperatures down to 0.4K. Pronounced Shubnikov-de Haas (SdH) oscillations were observed at a low temperature showing two dimensional electron gases (2DEG) in s tensile strained Si quantum well. The electron sheet density (ns) of $1.5\times10^{12}[\textrm{cm}^{-2}]$ and corresponding electron mobility of 14200 $[\textrm{cm}^2V^{-1}s^{-1}]$ were obtained at a low temperature of 0.4K from $Si/Si_{1-x}Ge_x$ structures with thermally grown oxides.

• Journal of the Korean Society for Nondestructive Testing
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• v.33 no.4
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• pp.336-341
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• 2013

In this paper, the design concept of a low-temperature vacuum blackbody was described, and thermophysical model of the blackbody was numerically evaluated. Also the working performance of low-temperature vacuum blackbody was evaluated using infrared camera system. The blackbody system was constructed to operate under high-vacuum conditions ($2.67{\times}10^{-2}$ Pa) to reduce temperature uncertainty, which is caused by vapor condensation at low temperatures usually below 273 K. In addition, both heat sink and heat shield including cold shield were installed around radiator to prevent heat loss from the blackbody. Simplified mathematical model of blackbody radiator was analyzed using modified Stefan-Boltzmann's rule. The infrared radiant performance of the blackbody was evaluated using infrared camera. Based on the results of measurements, and simulation, temperature stability of the low-temperature vacuum blackbody demonstrated that the blackbody system can serve as a highly stable reference source for the calibration of an infrared optical system.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.1
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• pp.11-17
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• 2000

The low temperature electron mobilities were investigated in Si/$Si_{1-x}Ge_{x}$ modulation Doped (MOD) quantum well structure with thermally grown oxide. N-type Si/$Si_{1-x}Ge_{x}$ structures were fabricated by a gas source MBE. Thermal oxidation was carried out in a dry $O_2$ atmosphere at $700^{\circ}C$ for 7 hours. Electron mobilities were measured by a Hall effect and a magnetoresistant effect at low temperatures down to 0.4 K. Pronounced Shubnikov-de Haas (SdH) oscillations were observed at a low temperature showing two dimensional electron gases (2 DEG) in a tensile strained Si quantum well. The electron sheet density ($n_{s}$) of 1.5${\times}$$10^{12}$[$cm^{-2}$] and corresponding electron mobility of 14200 [$cm^2$$V^{-1}$$s^{-1}$] were obtained at low temperature of 0.4 K from Si/$Si_{1-x}Ge_{x}$ MOD quantum well structure with thermally grown oxide.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.251.1-251.1
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• 2013

Combination of oxidative vacuum annealing and oxygen plasma treatment can serve as a simple and efficient method of line-width modification of imprinted nanopatterns. Since the vacuum annealing and oxygen plasma could lead mass loss of polymeric materials, either one of the process can yield a narrowed patterns. However, the vacuum annealing process usually demands quite high temperatures (${\geq}300^{\circ}C$) and extended annealing time to get appreciable line-width reduction. Although the plasma treatment may be considered as an effective low temperature rapid process for the line-width reduction, it is also suffering for the lowered controllability on application to very fine patterns. We have found that the vacuum annealing temperature can be lowered by introducing the oxygen in the vacuum process and that the combination of oxygen plasma treatment with the vacuum annealing could yield the best result in the line-with reduction of the imprinted polymeric nanopatterns. Well-defined line width reduction by more than 50% was successfully demonstrated at relatively low temperatures. Furthermore, it was verified that this process was applicable to the nanopatterns of different shapes and materials.