• Title/Summary/Keyword: low spin

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FINITE TEMPERATURE EFFECTS ON SPIN POLARIZATION OF NEUTRON MATTER IN A STRONG MAGNETIC FIELD

  • Isayev, Alexander A.;Yang, Jong-Mann
    • Journal of The Korean Astronomical Society
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    • v.43 no.5
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    • pp.161-168
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    • 2010
  • Magnetars are neutron stars possessing a magnetic field of about $10^{14}-10^{15}$ G at the surface. Thermodynamic properties of neutron star matter, approximated by pure neutron matter, are considered at finite temperature in strong magnetic fields up to $10^{18}$ G which could be relevant for the inner regions of magnetars. In the model with the Skyrme effective interaction, it is shown that a thermodynamically stable branch of solutions for the spin polarization parameter corresponds to the case when the majority of neutron spins are oriented opposite to the direction of the magnetic field (i.e. negative spin polarization). Moreover, starting from some threshold density, the self-consistent equations have also two other branches of solutions, corresponding to positive spin polarization. The influence of finite temperatures on spin polarization remains moderate in the Skyrme model up to temperatures relevant for protoneutron stars. In particular, the scenario with the metastable state characterized by positive spin polarization, considered at zero temperature in Phys. Rev. C 80, 065801 (2009), is preserved at finite temperatures as well. It is shown that, above certain density, the entropy for various branches of spin polarization in neutron matter with the Skyrme interaction in a strong magnetic field shows the unusual behavior, being larger than that of the nonpolarized state. By providing the corresponding low-temperature analysis, we prove that this unexpected behavior should be related to the dependence of the entropy of a spin polarized state on the effective masses of neutrons with spin up and spin down, and to a certain constraint on them which is violated in the respective density range.

Low Spin-Casting Solution Temperatures Enhance the Molecular Ordering in Polythiophene Films

  • Lee, Wi Hyoung;Lee, Hwa Sung;Park, Yeong Don
    • Bulletin of the Korean Chemical Society
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    • v.35 no.5
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    • pp.1491-1494
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    • 2014
  • High-crystallinity poly(3-hexylthiophene) (P3HT) thin films were prepared by aging the precursor solutions, prepared using a good solvent, chloroform, at low temperatures prior to spin-casting. Lower solution temperatures significantly improved the molecular ordering in the spin-cast P3HT films and, therefore, the electrical properties of field-effect transistors prepared using these films. Solution cooling enhanced the electrical properties by shifting the P3HT configuration equilibrium away from random coils and toward more ordered aggregates. At room temperature, the P3HT molecules were completely solvated in chloroform and adopted a random coil conformation. Upon cooling, however, the chloroform poorly solvated the P3HT molecules, favoring the formation of ordered P3HT aggregates, which then yielded more highly crystalline molecular ordering in the P3HT thin films produced from the solution.

Ferromagnetic Semiconductors: Preparation and Properties

  • 조성래
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.03a
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    • pp.19-19
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    • 2003
  • The injection of spins into nonmagnetic semiconductors has recently attracted great interest due to the potential to create new classes of spin-dependent electronic devices. A recent strategy to achieve control over the spin degree of freedom is based on dilute ferromagnetic semiconductors. Ferromagnetism has been reported in various semiconductor groups including II-Ⅵ, III-V, IV and II-IV,-V$_2$, which will be reviewed. On the other hand, to date the low solubility of magnetic ions in non-magnetic semiconductor hosts and/or low Curie temperature have limited the opportunities. Therefore the search for other promising ferromagnetic semiconducting materials, with high magnetic moments and high Curie temperatures (Tc), is of the utmost importance. In this talk, we also introduce new pure ferromagnetic semiconductors, MnGeP$_2$ and MnGeAs$_2$, exhibiting ferromagnetism and a magnetic moment per Mn at 5K larger than 2.40 ${\mu}$B. The calculated electronic structures using the FLAPW method show an indirect energy gap of 0.24 and 0.06 eV, respectively. We have observed spin injection in MnGeP$_2$ and MnGeAs$_2$ magnetic tunnel junctions through semiconducting barriers.

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Study on the Spin-up of Fluid in a Semi-Circular Container Using a Zonal-Embedded-Grid Method (국소적 격자 삽입법을 이용한 반 원주 내의 스핀업 유동에 대한 연구)

  • Yeo, Chang-Ho;Suh, Yong-Kweon
    • Proceedings of the KSME Conference
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    • 2004.04a
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    • pp.1885-1890
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    • 2004
  • In this paper the numerical method with a zonal embedded grid system was applied to the spin-up flow within a semi-circular container. Flow visualization was also performed on a rotating table. The results show that at a low level of damping (i.e. low viscosity and high liquid depth) a cyclonic cell produced initially near the left-hand-side corner of the container moves along a wall and merged with the cell on the right-hand-side.

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Collapse of Charge Ordering in Ru-doped Mono-layered Manganites

  • Hong, Chang-Seop;Kim, Wan-Seop;Hur, Nam-Hwi
    • Journal of Magnetics
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    • v.8 no.2
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    • pp.85-88
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    • 2003
  • The magnetic and transport properties far single crystals of Ru-doped mono-layered manganites $La_{0.5}Sr_{1.5}-Mn_{1-x}Ru_xO_4$ (0$\leq$$\chi$$\leq$0.1) have been studied using neutron diffraction and magnetization measurements. Temperature dependent magnetization data reveal that with an increase in the Ru concentration the parent charge ordered antiferromagnetic state is gradually destroyed and new ferromagnetic phase evolves. In the low Ru-doped system spin glass behavior is apparent in low temperature region, which is confirmed by ac and do magnetization measurements. The competing magnetic interaction between Mn/Mn and Mn/Ru couples is the most likely cause of the spin glass transition.

Effect of Modified Starches on Caking Inhibition in Ramen Soup

  • Wee, Hye-Won;Choi, Young-Jin;Chung, Myong-Soo
    • Food Science and Biotechnology
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    • v.16 no.4
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    • pp.646-649
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    • 2007
  • The effect of the addition of 2 kinds of chemically modified starches (the anti-caking agents; tapioca starch and com starch) on caking of ramen soup was observed using a low-resolution proton-pulsed nuclear magnetic resonance (NMR) technique. After storing ramen soup samples with diverse compositions of modified starch at 20-40% relative humidity for 4 weeks, changes in the spin-spin relaxation time constant ($T_2$) were measured as a function of temperature. $T_2-Temperature$ curves for ramen soup containing modified starches showed that the caking initiation temperature (glass transition temperature) was increased by $5^{\circ}C$ following the addition of only 0.5% modified cornstarch. The results indicate that the modified com starch used in this study would be an effective anti-caking agent for ramen soup, thus prolonging the shelf life of the product.

Electron Transport of Low Transmission Barrier between Ferromagnet and Two-Dimensional Electron Gas (2DEG)

  • Koo, H.C.;Yi, Hyun-Jung;Ko, J.B.;Song, J.D.;Chang, Joon-Yeon;Han, S.H.
    • Journal of Magnetics
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    • v.10 no.2
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    • pp.66-70
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    • 2005
  • The junction properties between the ferromagnet (FM) and two-dimensional electron gas (2DEG) system are crucial to develop spin electronic devices. Two types of 2DEG layer, InAs and GaAs channel heterostructures, are fabricated to compare the junction properties of the two systems. InAs-based 2DEG layer with low trans-mission barrier contacts FM and shows ohmic behavior. GaAs-based 2DEG layer with $Al_2O_3$ tunneling layer is also prepared. During heat treatment at the furnace, arsenic gas was evaporated and top AlAs layer was converted to aluminum oxide layer. This new method of forming spin injection barrier on 2DEG system is very efficient to obtain tunneling behavior. In the potentiometric measurement, spin-orbit coupling of 2DEG layer is observed in the interface between FM and InAs channel 2DEG layers, which proves the efficient junction property of spin injection barrier.

MAGNETORESISTANCE OF NiFeCo/Cu/NiFeCo/FeMn MULTILAYERED THIN FILMS WITH LOW SATURATION FIELD

  • Bae, S.T.;Min, K.I.;Shin, K.H.;Kim, J.Y.
    • Journal of the Korean Magnetics Society
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    • v.5 no.5
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    • pp.570-574
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    • 1995
  • Magnetoresistance of NiFeCo/Cu/NiFeCo/FeMn uncoupled exchange biased sandwiches has been studied. The magnetoresistance change ratio, ${\Delta}R/R_{s}$ showed 4.1 % at a saturation field as low as 11 Oe in $Si/Ti(50\;{\AA})/NiFeCo(70\;{\AA})/Cu(23\;{\AA})/NiFeCo(70\;{\AA})/FeMn(150\;{\AA})/Cu(50\;{\AA})$ spin valve structure. In this system, the magnetoresistance was affected by interlayer material and thickness. When Ti and Cu were used as the interlayer material in this structure, maximum magnetoresistance change ratio were 0.32 % and 4.1 %, respectively. 6.1 % MR ratio was obtained in $Si/Ti(50\;{\AA})/NiFeCo(70\;{\AA})/Cu(15\;{\AA})/NiFeCo(70\;{\AA})/FeMn(150\;{\AA})/Cu(50\;{\AA})$ spin valve structure. The magnetoresistance change ratio decreased monotonically as the interlayer thickness increased. It was found that the exchange bias field exerted by FeMn layer to the adjacent NiFeCo layer was ~25 Oe, far smaller than that reported in NiFe/Cu/NiFe/FeMn spin valve structure(Dieny et. al., ~400 Oe). The relationship between the film texture and exchange anisotropy ha been examined for spin valve structures with Ti, Cu, or non-buffer layer.

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LARGE MAGNETORESISTANCE OF SPUTTERED BI THIN FILMS AND APPLICATION OF SPIN DEVICE

  • M. H. Jeun;Lee, K. I.;Kim, D. Y.;J. Y. Chang;K. H. Shin;S. H. Han;J. G. Ha;Lee, W. Y.
    • Proceedings of the Korean Magnestics Society Conference
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    • 2003.06a
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    • pp.66-67
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    • 2003
  • Bismuth (Bi) has been an attractive materials for studying spin dependent transport properties because it shows very large magnetoresistance (MR) resulting from its highly anisotropic Fermi surface, low carrier concentrations, long carrier mean free path 1 and small effective carrier mass m*[1-3]. With all the intriguing properties, difficulty in fabrication of high quality Bi thin films may have prevented extensive application of Bi in magnetic field sensing and spin-injection devices. Previous works found that the surface roughness and small grain size in 100-200 nm of Bi thin film made by evaporation and sputtering are major causes of low MR. Although relatively higher MR in electrodeposited Bi followed by annealing was reported, it still suffers from rough sulfate roughness which is so severs that it is hardly able to make a field sensing and spin-injection device using conventional photolithography process.

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Effect of Low-temperature Thermal Treatment on Degree of Crystallinity of a Low Density Polyethylene: $^{1}H$ Nuclear Magnetic Resonance Study (저밀도 폴리에틸렌의 결정화도에 대한 저온 열처리 효과: 수소 핵자기공명 연구)

  • Lee, Chang-Hoon;Choi, Jae-Kon
    • Elastomers and Composites
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    • v.43 no.4
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    • pp.259-263
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    • 2008
  • An effect of low-temperature long-term thermal degradation on a degree of crystallinity of a low density polyethylene (LDPE) was investigated by using $^1H$ solid state nuclear magnetic resonance (SSNMR). Firstly, the long-term thermal treatment makes a color of LDPE from white to pale yellow which is indicative of thermal oxidation. Secondly, it makes the $^{1}H$ NMR spin-spin and spin-lattice relaxation times ($T_1$) to be long. Lastly, the degree of crystallinity of the semicrystalline aged-LDPE also decreases with thermal treatment. Above all, the $T_1$ increase is envisaged to be due to either a decrease of the amorphous regions governing overall spin-lattice relaxation mechanism in LDPEs or a dynamically restricted motion of specific molecular motions by intermolecular hydrogen bonding or crosslinking. However, since the decrease of crystallinity implies an increase of amorphous regions by the thermal treatment, the former case is contrast to our results. Accordingly, we concluded that the latter effect is responsible for the $T_1$ increase.