• 천문학회지
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• 제43권5호
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• pp.161-168
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• 2010

Magnetars are neutron stars possessing a magnetic field of about $10^{14}-10^{15}$ G at the surface. Thermodynamic properties of neutron star matter, approximated by pure neutron matter, are considered at finite temperature in strong magnetic fields up to $10^{18}$ G which could be relevant for the inner regions of magnetars. In the model with the Skyrme effective interaction, it is shown that a thermodynamically stable branch of solutions for the spin polarization parameter corresponds to the case when the majority of neutron spins are oriented opposite to the direction of the magnetic field (i.e. negative spin polarization). Moreover, starting from some threshold density, the self-consistent equations have also two other branches of solutions, corresponding to positive spin polarization. The influence of finite temperatures on spin polarization remains moderate in the Skyrme model up to temperatures relevant for protoneutron stars. In particular, the scenario with the metastable state characterized by positive spin polarization, considered at zero temperature in Phys. Rev. C 80, 065801 (2009), is preserved at finite temperatures as well. It is shown that, above certain density, the entropy for various branches of spin polarization in neutron matter with the Skyrme interaction in a strong magnetic field shows the unusual behavior, being larger than that of the nonpolarized state. By providing the corresponding low-temperature analysis, we prove that this unexpected behavior should be related to the dependence of the entropy of a spin polarized state on the effective masses of neutrons with spin up and spin down, and to a certain constraint on them which is violated in the respective density range.

• Bulletin of the Korean Chemical Society
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• 제35권5호
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• pp.1491-1494
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• 2014

High-crystallinity poly(3-hexylthiophene) (P3HT) thin films were prepared by aging the precursor solutions, prepared using a good solvent, chloroform, at low temperatures prior to spin-casting. Lower solution temperatures significantly improved the molecular ordering in the spin-cast P3HT films and, therefore, the electrical properties of field-effect transistors prepared using these films. Solution cooling enhanced the electrical properties by shifting the P3HT configuration equilibrium away from random coils and toward more ordered aggregates. At room temperature, the P3HT molecules were completely solvated in chloroform and adopted a random coil conformation. Upon cooling, however, the chloroform poorly solvated the P3HT molecules, favoring the formation of ordered P3HT aggregates, which then yielded more highly crystalline molecular ordering in the P3HT thin films produced from the solution.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.19-19
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• 2003

The injection of spins into nonmagnetic semiconductors has recently attracted great interest due to the potential to create new classes of spin-dependent electronic devices. A recent strategy to achieve control over the spin degree of freedom is based on dilute ferromagnetic semiconductors. Ferromagnetism has been reported in various semiconductor groups including II-Ⅵ, III-V, IV and II-IV,-V$_2$, which will be reviewed. On the other hand, to date the low solubility of magnetic ions in non-magnetic semiconductor hosts and/or low Curie temperature have limited the opportunities. Therefore the search for other promising ferromagnetic semiconducting materials, with high magnetic moments and high Curie temperatures (Tc), is of the utmost importance. In this talk, we also introduce new pure ferromagnetic semiconductors, MnGeP$_2$ and MnGeAs$_2$, exhibiting ferromagnetism and a magnetic moment per Mn at 5K larger than 2.40 ${\mu}$B. The calculated electronic structures using the FLAPW method show an indirect energy gap of 0.24 and 0.06 eV, respectively. We have observed spin injection in MnGeP$_2$ and MnGeAs$_2$ magnetic tunnel junctions through semiconducting barriers.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 춘계학술대회
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• pp.1885-1890
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• 2004

In this paper the numerical method with a zonal embedded grid system was applied to the spin-up flow within a semi-circular container. Flow visualization was also performed on a rotating table. The results show that at a low level of damping (i.e. low viscosity and high liquid depth) a cyclonic cell produced initially near the left-hand-side corner of the container moves along a wall and merged with the cell on the right-hand-side.

• Journal of Magnetics
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• 제8권2호
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• pp.85-88
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• 2003

The magnetic and transport properties far single crystals of Ru-doped mono-layered manganites $La_{0.5}Sr_{1.5}-Mn_{1-x}Ru_xO_4$ (0$\leq$$\chi$$\leq$0.1) have been studied using neutron diffraction and magnetization measurements. Temperature dependent magnetization data reveal that with an increase in the Ru concentration the parent charge ordered antiferromagnetic state is gradually destroyed and new ferromagnetic phase evolves. In the low Ru-doped system spin glass behavior is apparent in low temperature region, which is confirmed by ac and do magnetization measurements. The competing magnetic interaction between Mn/Mn and Mn/Ru couples is the most likely cause of the spin glass transition.

• Food Science and Biotechnology
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• 제16권4호
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• pp.646-649
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• 2007

The effect of the addition of 2 kinds of chemically modified starches (the anti-caking agents; tapioca starch and com starch) on caking of ramen soup was observed using a low-resolution proton-pulsed nuclear magnetic resonance (NMR) technique. After storing ramen soup samples with diverse compositions of modified starch at 20-40% relative humidity for 4 weeks, changes in the spin-spin relaxation time constant ($T_2$) were measured as a function of temperature. $T_2-Temperature$ curves for ramen soup containing modified starches showed that the caking initiation temperature (glass transition temperature) was increased by $5^{\circ}C$ following the addition of only 0.5% modified cornstarch. The results indicate that the modified com starch used in this study would be an effective anti-caking agent for ramen soup, thus prolonging the shelf life of the product.

• Journal of Magnetics
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• 제10권2호
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• pp.66-70
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• 2005

The junction properties between the ferromagnet (FM) and two-dimensional electron gas (2DEG) system are crucial to develop spin electronic devices. Two types of 2DEG layer, InAs and GaAs channel heterostructures, are fabricated to compare the junction properties of the two systems. InAs-based 2DEG layer with low trans-mission barrier contacts FM and shows ohmic behavior. GaAs-based 2DEG layer with $Al_2O_3$ tunneling layer is also prepared. During heat treatment at the furnace, arsenic gas was evaporated and top AlAs layer was converted to aluminum oxide layer. This new method of forming spin injection barrier on 2DEG system is very efficient to obtain tunneling behavior. In the potentiometric measurement, spin-orbit coupling of 2DEG layer is observed in the interface between FM and InAs channel 2DEG layers, which proves the efficient junction property of spin injection barrier.

• 한국자기학회지
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• 제5권5호
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• pp.570-574
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• 1995

Magnetoresistance of NiFeCo/Cu/NiFeCo/FeMn uncoupled exchange biased sandwiches has been studied. The magnetoresistance change ratio, ${\Delta}R/R_{s}$ showed 4.1 % at a saturation field as low as 11 Oe in $Si/Ti(50\;{\AA})/NiFeCo(70\;{\AA})/Cu(23\;{\AA})/NiFeCo(70\;{\AA})/FeMn(150\;{\AA})/Cu(50\;{\AA})$ spin valve structure. In this system, the magnetoresistance was affected by interlayer material and thickness. When Ti and Cu were used as the interlayer material in this structure, maximum magnetoresistance change ratio were 0.32 % and 4.1 %, respectively. 6.1 % MR ratio was obtained in $Si/Ti(50\;{\AA})/NiFeCo(70\;{\AA})/Cu(15\;{\AA})/NiFeCo(70\;{\AA})/FeMn(150\;{\AA})/Cu(50\;{\AA})$ spin valve structure. The magnetoresistance change ratio decreased monotonically as the interlayer thickness increased. It was found that the exchange bias field exerted by FeMn layer to the adjacent NiFeCo layer was ~25 Oe, far smaller than that reported in NiFe/Cu/NiFe/FeMn spin valve structure(Dieny et. al., ~400 Oe). The relationship between the film texture and exchange anisotropy ha been examined for spin valve structures with Ti, Cu, or non-buffer layer.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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• pp.66-67
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• 2003

Bismuth (Bi) has been an attractive materials for studying spin dependent transport properties because it shows very large magnetoresistance (MR) resulting from its highly anisotropic Fermi surface, low carrier concentrations, long carrier mean free path 1 and small effective carrier mass m*[1-3]. With all the intriguing properties, difficulty in fabrication of high quality Bi thin films may have prevented extensive application of Bi in magnetic field sensing and spin-injection devices. Previous works found that the surface roughness and small grain size in 100-200 nm of Bi thin film made by evaporation and sputtering are major causes of low MR. Although relatively higher MR in electrodeposited Bi followed by annealing was reported, it still suffers from rough sulfate roughness which is so severs that it is hardly able to make a field sensing and spin-injection device using conventional photolithography process.

• Elastomers and Composites
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• 제43권4호
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• pp.259-263
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• 2008

저밀도 폴리에틸렌에 대한 장시간 저온 열처리가 저밀도 폴리에틸렌 고분자의 결정화도에 미치는 효과를 고체 수소 핵자기공명을 이용하여 연구하였다. 장시간 열처리는 첫째, 저밀도 폴리에틸렌의 색깔을 엷은 노란색으로 변하게 하였고 둘째, 저밀도폴리에틸렌에서 수소 핵의 스핀-스핀 및 스핀-격자 완화시간을 증가시켰으며, 셋째, 결정화도를 줄어들게 하였다. 먼저, $T_1$의 증가를 저밀도폴리에틸렌의 전체 스핀-격자 완화시간을 결정하는 비정질 영역의 부피 감소에 의한 것이거나 분자간 가교나 수소결합에 의한 특정 분자 운동 성분의 느려짐에 의해 발생하는 것으로 고려하였다. 하지만 결정화도의 감소는 열처리에 의한 비정질 영역의 감소를 의미하므로 전자와는 배치되었다. 따라서 $T_1$의 증가는 후자에 의한 결과임을 알 수 있었다.