• 한국염색가공학회지
• /
• 제7권1호
• /
• pp.1-9
• /
• 1995

In order to improve dyeability of poly(ethylene terephthalate)(PET) micro filament fabrics, the effect of the prior oxygen low temperature plasma on the subsequent dyeing(deep dyeing, printing) was examined in various conditions. The apparent concentration of dyed PET micro filament fabrics was increased by $O_{2}$plasma treatment. Higher discharge power levels and higher reactor pressure values created more significant effect. The wettability was significantly increased by $O_{2}$ plasma treatment. Therefore, it is predicted that introducing hydrophilic group on the surface of material can improve the apparent concentration of PET micro filament fabrics.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제51권3호
• /
• pp.111-114
• /
• 2002

Using the plasma that we developed to generate a low-temperature plasma at atmospheric pressure, we have investigated the etching possibility of an air-exposed zinc oxide(ZnO) thin films. Hydrogen and methane radicals generated from the plasma were observed and their intensity was found to be dependent on the isomer of butyl acetate by an analysis with optical emission spectrosxopy. The etching ability of this plasma was evaluated by an emission intensity, etching time, rf power.

• Journal of Microbiology
• /
• 제44권4호
• /
• pp.466-471
• /
• 2006

In this study, we attempted to characterize the biomolecular effects of an atmospheric-pressure cold plasma (APCP) system which utilizes helium/oxygen $(He/O_2)$. APCP using $He/O_2$ generates a low level of UV while generating reactive oxygen radicals which probably serve as the primary factor in sterilization; these reactive oxygen radicals have the advantage of being capable to access the interiors of the structures of microbial cells. The damaging effects of plasma exposure on polypeptides, DNA, and enzyme proteins in the cell were assessed using biochemical methods.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
• /
• pp.91-91
• /
• 2005

Electron energy distribution functions and plasma parameters such as electron temperature ($T_e$) and electron density ($n_e$) in low-pressure Cl-based plasmas have been measured. As the $Cl_2/A4$ gas mixing ratio, the $BCl_3$ gas addition and the process pressure increases, the electron energy probability and the electron temperature decreases. In case of source power increases, electron energy probability increases, whereas the electron temperature was not related.

• 분석과학
• /
• 제6권4호
• /
• pp.369-374
• /
• 1993

플라즈마 진동 현상은 글로우방전을 이용한 기체크로마토그래프 검출기의 개발 과정에서 측정되었으며 전류의 변화에 비하여 매우 안정하며 낮은 검출한계로 새로운 검출기로의 개발 가능성이 높다. 플라즈마 진동의 최적 조건과 메카니즘을 규명하기 위하여 몇 가지 실험조건을 변화시키며 관찰하였다. 즉, 방전전압(전류), 압력, 그리고 방전전극 간격을 변화시킨 결과 다양한 형태의 진동이 10KHz에서 10MHz까지의 주파수 범위에서 관찰되었다. 특히 방전전극 간격에 따라 낮은 압력과 전압의 조건에서 두 가지 형태의 진동이 나타났다. 한 가지 형태는 positive column 영역에서, 또 다른 하나는 negative glow 영역에서 측정되었다. Positive column 영역보다 negative glow 영역에서 발생된 플라즈마 진동이 훨씬 더 높은 감도 변화와 더 큰 주파수를 보였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.213-213
• /
• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is one of the best semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. For the realization of high density MRAM, the etching of MTJ stack with good properties is one of a key process. Recently, there has been great interest in the MTJ stack using MgO as barrier layer for its huge room temperature MR ratio. The use of MgO barrier layer will undoubtedly accelerate the development of MTJ stack for MRAM. In this study, high-density plasma reactive ion etching of MgO films was investigated in an inductively coupled plasma of $Cl_2$/Ar gas mixes. The etch rate, etch selectivity and etch profile of this magnetic film were examined on vary gas concentration. As the $Cl_2$ gas concentration increased, the etch rate of MgO monotonously decreased and etch slop was slanted. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of MgO thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of MgO displayed better etch profiles. Finally, the clean and vertical etch sidewall of MgO films was achieved using $Cl_2$/Ar plasma at the optimized etch conditions.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.250.2-250.2
• /
• 2014

Currently, teeth whitening method which is applicable to dental surgery is that physician expertises give medical treatment to teeth directly dealed with a high concentration of hydrogen peroxide and carbamide peroxide. If hydrogen peroxide concentration is too high for treatment of maximized teeth whitening effect [1], it is harmful to the human body [2]. To the maximum effective and no harmful teeth whitening effect in a short period of time at home, we have observed the whitening effect using carbamide peroxide (15%) and a low-temperature atmospheric pressure plasma jet which is regulated by the Food and Drug Administration. The gas supplied conditions of the non-thermal atmospheric pressure plasma jet was with the humidified (0.6%) gas in nitrogen or air at gas flow rate of 1000 sccm. Also, the measurement of chemical species from the jet was carried out using the optical emission spectroscopy (OES), the evidence of increased reactive oxygen species compared to non-humidified plasma jet. We have found that the whitening effect of the plasma is very excellent through this experiment, when bovine teeth are treated in carbamide peroxide (15%) and water vapor (0.2 to 1%). The brightness of whitening teeth was increased up to 2 times longer in the CIE chromaticity coordinates. The colorimetric spectrometer (CM-3500d) can measure color degree of whitening effect.

• 조명전기설비학회논문지
• /
• 제27권6호
• /
• pp.95-99
• /
• 2013

Furnace is currently the most important doping process using POCl3 in solar cell. However furnace need an expensive equipment cost and it has to purge a poisonous gas. Moreover, furnace typically difficult appling for selective emitters. In this study, we developed a new atmospheric pressure plasma source, in this procedure, we research the atmospheric pressure plasma doping that dopant is phosphoric acid($H_3PO_4$). Metal tube injected Ar gas was inputted 5 kV of a low frequency(scores of kHz) induced inverter, so plasma discharged at metal tube. We used the P type silicon wafer of solar cell. We regulated phosphoric acid($H_3PO_4$) concentration on 10% and plasma treatment time is 90 s, 150 s, we experiment that plasma current is 70 mA. We check the doping depth that 287 nm at 90 s and 621 nm at 150 s. We analysis and measurement the doping profile by using SIMS(Secondary Ion Mass Spectroscopy). We calculate and grasp the sheet resistance using conventional sheet resistance formula, so there are 240 Ohm/sq at 90 s and 212 Ohm/sq at 150 s. We analysis oxygen and nitrogen profile of concentration compared with furnace to check the doped defect of atmosphere.

• 한국응용과학기술학회지
• /
• 제40권1호
• /
• pp.71-80
• /
• 2023

실버 페이스트는 상대적으로 낮은 열처리로 공정이 가능하기 때문에 전자 소자 응용분야에서 유용한 전극 재료이다. 본 연구에서는 은 페이스트 전극에 대기압 플라즈마 제트를 이용하여 전극 표면을 처리 했다. 이 플라즈마 제트는 11.5 kHz 작동 주파수에서 5.5 ~ 6.5 kV의 고전압을 사용하여 아르곤 분위기에서 생성되었다. 플라즈마 제트는 대기압에서 수행함으로써 인쇄 공정에 더 유용할 수 있다. 플라즈마 처리시간, 인가된 전압, 가스유량에 따라 전극의 표면은 빠르게 친수성화 되었으며 접촉각의 변화가 관찰되었다. 또한, 대면적 샘플에서 플라즈마 처리 후 접촉각의 편차가 없었는데, 이는 기판의 크기에 관계없이 균일한 결과를 얻을 수 있었다는 것을 의미한다. 본 연구의 결과는 대면적 전자소자의 제조 및 향후 응용 분야에서 적층 구조를 형성하는데 매우 유용할 것으로 기대된다.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 1998년도 하계종합학술대회논문집
• /
• pp.339-342
• /
• 1998

Plasma etching of photoresist needs high etch rate, good uniformity and rae, good uniformity and low damage in low cost. ICP asher is expected to satisfy these requriement for next eneration semiconductor devices. ICPsimulator has been used to design the ashing chamber to redcue the development time and cost, and its results have been verified by QMS, OES and langmuir probe measurments. Plasma characteristics are monitored in terms of RF power and chamber pressure.