• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.309-309
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• 2009

In-Ga-Zn-O (IGZO) has drawn much attention as a compatible material for transparent thin film transistors (TTFT) channel layer due to its high mobility and optical transparency at low processing temperatures. In this work, we investigated the effect of oxygen ambient on structural, electrical and optical properties of amorphous In-Ga-Zn-O (IGZO) thin films by using pulsed laser deposition (PLD). The films were deposited at various oxygen pressures and the structural, electrical and optical properties were investigated. X-ray diffraction (XRD) analysis showed that amorphous IGZO films were grown at all oxygen pressures. The surface morphology and optical properties with various oxygen pressures were studied by field emission scanning electron microscopy (FE-SEM) and UV-VIS spectroscopy, respectively. The grain boundary was observed more apparently and the calculated optical band gap became larger as oxygen pressure increased. To examine the electrical properties, Hall-effect measurements were carried out. The films showed high mobility.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.106-106
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• 2011

Recently, zinc oxide (ZnO) thin films have attracted great attention as a promising candidate for various electronic applications such as transparent electrodes, thin film transistors, and optoelectronic devices. ZnO thin films have a wide band gap energy of 3.37 eV and transparency in visible region. Moreover, ZnO thin films can be deposited in a poly-crystalline form even at room temperature, extending the choice of substrates including even plastics. Therefore, it is possible to realize thin film transistors by using ZnO thin films as the active channel layer. In this work, we investigated influence of oxygen partial pressure on ZnO thin films and fabricated ZnO-based thin film transistors. ZnO thin films were deposited on glass substrates by using a pulsed laser deposition technique in various oxygen partial pressures from 20 to 100 mTorr at room temperature. X-ray diffraction (XRD), transmission line method (TLM), and UV-Vis spectroscopy were employed to study the structural, electrical, and optical properties of the ZnO thin films. As a result, 80 mTorr was optimal condition for active layer of thin film transistors, since the active layer of thin film transistors needs high resistivity to achieve low off-current and high on-off ratio. The fabricated ZnO-based thin film transistors operated in the enhancement mode with high field effect mobility and low threshold voltage.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.28.1-28.1
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• 2009

The superior properties of ZnO such as high exciton binding energy, high thermal and chemical stability, low growth temperature and possibility of wet etching process in ZnO have great interest for applications ranging from optoelectronics to chemical sensor. Particularly, vertically well-aligned ZnO nanorods on large areas with good optical and structural properties are of special interest for the fabrication of electronic and optical nanodevices. Currently, low-dimensional ZnO is synthesized by metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), thermal evaporation, and sol.gel growth. Recently, our group has been reported about achievement the growth of Ga-doped ZnO nanorods using ZnO seed layer on p-type Si substrate by RF magnetron sputtering system at high rf power and high growth temperature. However, the crystallinity of nanorods deteriorates due to lattice mismatch between nanorods and Si substrate. Also, in the growth of oxide using sputtering, the oxygen flow ratio relative to argon gas flow is an important growth parameter and significantly affects the structural properties. In this study, Phosphorus (P) doped ZnO nanorods were grown on c-sapphire substrates without seed layer by radio frequency magnetron sputtering with various argon/oxygen gas ratios. The layer change films into nanorods with decreasing oxygen partial pressure. The diameter and length of vertically well-aligned on the c-sapphire substrate are in the range of 51-103 nm and about 725 nm, respectively. The photoluminescence spectra of the nanorods are dominated by intense near band-edge emission with weak deep-level emission.

• 한국항행학회논문지
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• 제22권3호
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• pp.205-212
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• 2018

자연발화의 문제는 심각한 경제적 손해뿐만 아니라 화재 시 발생하는 유해가스로 인해 환경오염을 발생시키는 대표적인 발전소 피해이다. 저탄장 자연발화 예방 및 조치하기 위해 드론을 이용하는 방법이 제시되었으나 외부의 측풍과 외란으로 인한 2차 사고의 발생위험이 존재하는 상황이다. 자연발화의 원인과 영향 인자는 매우 복잡하기 때문에 사전에 예방하기가 쉽지 않으며 일단 발생하면 소화하기도 어렵다. 따라서 저탄장 내부에서 직접적으로 온도 및 상태를 측정하고 자연발화 지점에 직접적으로 냉각 가스를 분출하여 소화하는 장치가 필요하다. 본 연구는 저탄장의 자연발화를 예방하기 위한 냉각볼 장치의 내부 압력과 외부 압력에 대하여 구조해석을 실시하고 구조적 안전성에 대하여 연구한다.

• 청정기술
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• 제7권3호
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• pp.203-214
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• 2001

플라즈마를 발생시키는 반응기체의 종류에 따라 실리콘 산화막 세정에 어떠한 영향을 미치는지에 대해 연구하였다. 압력 (100 mTorr), 전력 (300 W, 500 W), 전극간 거리 (5, 8, 11.5 cm), 세정시간 (90초, 180초), 가스유량 (50sccm) 등의 변수들을 고정시키고 $CHF_3$, $CF_4$, 아르곤, 산소 등의 세정가스를 변화시키며 세정성능을 비교하였다. 세정결과 아르곤 플라즈마는 단지 물리적인 스퍼터링 효과만으로 세정속도가 느렸다. 산소 플라즈마는 5cm 전극거리, 300W, 180초 세정시 좋은 세정효과를 내었으나, 표면거칠기가 증가하였다. $CF_4$ 플라즈마의 경우 가장 좋은 세정효과를 얻었다. $CHF_3$ 플라즈마는 CFx/F의 비율을 낮출 수 있는 첨가기체가 필요함을 알 수 있었다. $CHF_3$에 아르곤을 첨가하였을 경우에는 원활한 세정효과를 얻을 수 없었으나, 산소를 첨가하였을 경우 좋은 세정효과를 얻을 수 있었다.

• The Korean Journal of Ceramics
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• 제6권2호
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• pp.110-115
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• 2000

$SrBi_2Ta_2O_9$ thin films were deposited at room temperature on the usual (111) oriented Pt bottom electrodes using r.f. magnetron sputtering, and then post-annealed at 650-$800^{\circ}C$ for 30min in oxygen flow. Low temperature processing which shows the preferred oriented SBT thin films was obtained by controlling the sputtering pressure and/or Sr content in target. The orientation and grain growth behavior of SBT thin films were dependent on Sr contents in films. With increasing the excess Bi content up to 50% in SBT thin films, it was possible to lower the onset temperature of grain growth. The c-axis preferred oriented SBT thin films were well-grown under the condition of low post-annealing($650^{\circ}C$) by lowering post-annealing pressure. After $10^{11}$ switching cycles, no polarization degradation was observed in both preferred oriented SBT capacitors.

• 한국추진공학회지
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• 제23권5호
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• pp.43-52
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• 2019

극저온 유체를 사용하는 발사체는 극저온 유체의 자연순환회로를 이용하여 발사체의 엔진 입구를 냉각한다. 자연순환회로의 질량유량은 순환시스템을 구성하는 배관의 길이 및 직경과 시스템으로 들어오는 열유입에 의하여 결정된다. 극저온 유체의 자연순환회로의 순환 검증 및 질량유량 측정을 위하여 실험을 진행하였으며, 이론적 계산 결과와 비교하였다. 비교 결과 12%의 오차가 있음을 확인하였다. 이 결과를 바탕으로 발사체 상단에서 저중력 구간 및 가속 구간에서의 자연순환 질량유량을 예측한 내용을 포함한다. 가속구간에서는 산화제탱크가 100 kPa 내외로 유지하는 것이 자연순환유량 증가에 이로웠으며, 저중력구간에서는 중력가속도의 크기에 따른 최적 압력으로 조절해야 자연순환유량의 최고값을 유지할 수 있었다.

• 한국재료학회지
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• 제28권3호
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• pp.159-165
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• 2018

In order to increase the efficiency of the sputtering method widely used in thin film fabrication, a dc sputtering apparatus which supplies both high frequency and magnetic field from the outside was fabricated, and cobalt thin film was fabricated using this apparatus. The apparatus can independently control the applied voltage, the target-substrate distance, and the target current, which are important parameters in the sputtering method, so that a stable glow discharge is obtained even at a low gas pressure of $10^{-3}$ Torr. The fabrication conditions using the sputtering method were mainly performed in $Ar+O_2$ mixed gas containing about 0.6 % oxygen gas under various Ar gas pressures of 1 to 30 mTorr. The microstructure of Co thin films deposited using this apparatus was examined by electron diffraction pattern and X-ray techniques. The magnetic properties were investigated by measuring the magnetization curves. The microstructure and magnetic properties of Co thin films depend on the discharge gas pressure. The thin film fabricated at high gas pressure showed a columnar structure containing a large amount of the third phase in the boundary region and the thin film formed at low gas pressure showed little or no columnar structure. The coercivity in the plane was slightly larger than that in the latter case.

• Carbon letters
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• 제2권3_4호
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• pp.192-201
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• 2001

The Carbon/Carbon composite was prepared from 3D carbon fiber preform and coal tar pitch as matrix precursor. In order to evaluate of ablative characteristics of the composite, liquid rocket system was employed Kerosene and liquid oxygen was used as propellants, operating at a nominal chamber pressure of 330 psi and a nominal mixture ratio (O/F) of 2.0. The results of an experimental evaluation were that high density composite exhibited high, while low density composites showed low erosion resistance. The erosion rate against heat flux was highly depended on the density of the materials. The morphology of eroded fiber showed differently according to collision angle with heat flux on the composite. The granular matrix which derived from carbonization pressure of 900 bar was more resistance to heat flux than well-developed flow type matrix.

• Progress in Superconductivity
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• 제7권1호
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• pp.58-63
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• 2005

We investigated the surface oxidation behavior of cube-textured polycrystalline nickel at various oxidation conditions. Cube-textured NiO film was formed on a cube-textured polycrystalline nickel regardless of oxidation conditions but different growth behavior of NiO crystals was observed depending on the oxidation conditions. The introduction of water vapor into $O_2$ did not affect the texture evolution, but rough and porous microstructure was developed. Microstructure of NiO film tends to be denser as the oxygen partial pressure increases. It is interesting that (111) peak of theta - two theta diffraction pattern started to get stronger in air atmosphere and (111) plane became the major texture in the substrate oxidized in high purity argon gas. Small amount of high index crystallographic plane NiO peak crystal was observed when $N_{2}O$ was used as an oxidant while only (200) plane crystal was formed in dry $O_2$ atmosphere. Flat and smooth surface was changed into rough faceted one when ramping rate to oxidation temperature was faster. The grain size of NiO was decreased when the oxygen partial pressure was low. It was also observed that the modification of nickel surface suppressed the development of (200) texture.