• Elastomers and Composites
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• 제15권1호
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• pp.3-9
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• 1980

일정온도와 압력에서 상업용 고분자필름들의 산소투과도와 산소투과방지도에 관하여 연주하였다. 산소투과방지 도는 산소특과도의 역수로 정의하고 coulometric oxygen permeability tester를 사용하여 $23{\pm}1^{\circ}C$, latm에서 24시간 동안 투과한 산소의 량을 측정하였다. 산소투과방지도의 상대적 크기는 다음과 같은 순서로 감소함을 밝혔다. 연신 Nylon (O. Nylon)> 연신 Polyester (O. PET)> 무연신 Nylon (N. Nylon)> 무연신 Polyester(N. PET)> 경질 Polyvinyl chloride (Rigid PVC)> 반경질 Polyvinyl chloride (Semirigid PVC)> 연신 Polypropylene (O. PP)> 연질 Polyvinyl chloride (P. PVC)> 무연신 Polypropylene (C. PP)> 저밀도 Polyethylene(LDPE)> 고밀도 Polyethylene (HDPE, Inflation)> 고밀도 Polyethylene (HDPE, T-die) 필름들의 산소투과방지도는 고분자의 극성, 필름의 두께 및 기계적 연신성의 증가에 따라서 증가하고 PVC에서는 가소제 첨가에 따라서 감소하였다. 포장재료로서 고분자 필름은 고분자 주쇄에 극성이 있는 필름과 극성이 없는 필름들을 산소 및 습기투과방지를 위하여 첩합하여야 한다.

• Journal of Chest Surgery
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• 제17권2호
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• pp.250-256
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• 1984

Eisenmenger syndrome is a condition which systemic arterial blood oxygen unsaturation occurs if obstruction in the pulmonary capillaries raises the pulmonary vascular resistance and pulmonary arterial pressure to or beyond systemic levels and then a significant right to left shunt develops across a preexisting cardiac septal defect or an aortopulmonary communication-We have experienced 3 cases of similar condition. Case I is 24 year old man who has had cyanosis and dyspnea on exertion since childhood. His pulmonary arterial pressure was 110/80mmHg. He was operated under diagnosis of the mitral stenosis and tetralogy of Fallot, but it was finally discovered that he had patent ductus arteriosus and ventricular defect was closed with perforated prosthetic patch, but the patient expired due to right heart failure low cardiac output. Case II was 16 year old female who had pulmonary hypertension of 110/85mmHg. She was diagnosed as Eisenmenger syndrome combining with atrial septal defect and patent ductus arteriosus. Case III was 20 year old male. His pulmonary arterial pressure was 110/70mmHg and the underlying defect was patent ductus arteriosus.

• 전기학회논문지
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• 제56권10호
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• pp.1802-1806
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• 2007

Nowadays, many configurations and applications of small atmospheric plasma source have been investigated with growing interest, as it provides the bacteria inactivation, the surface modification and removal of unwanted small regions, and so on. In this paper, the non-thermal micro plasma source under atmospheric pressure by means of submicrosecond pulse voltage waveforms is suggested. Plasma operates in helium is appears as a small (sub-mm) glow at the tip of a plasma gun. Electrical measurements show that the plasma source operates at low voltage (about 500V) and the power consumption is about 1W at 25kHz. Moreover, the emission spectrum shows the relatively higher emission intensity of oxygen particles than those of helium and nitrogen.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.61-62
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• 2005

The present article deals with in situ post annealing of ZnO in sputtering system. The ZnO thin films were grown at low temperature of $100^{\circ}C$ and at working pressure of 15 mTorr with RF magnetron sputtering. Having been gown, ZnO thin films were annealed in situ at different temperatures, at annealing ambient pressure of 15 mTorr and in ambients of oxygen and argon respectively. Through analyses of XRDs, it is can be concluded that the crystallinity of annealed ZnO thin films becomes much better than that of as-grown ZnO thin film.

• Nano
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• 제13권10호
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• pp.1850124.1-1850124.12
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• 2018

$TiO_2$ films were deposited from oxygen/titanium tetraisopropoxide (TTIP) plasmas at low temperature by Helicon-PECVD at floating potential ($V_f$) or substrate self-bias of -50 V. The influence of titanium precursor partial pressure on the morphology, nanostructure and optical properties was investigated. Low titanium partial pressure ([TTIP] < 0.013 Pa) was applied by controlling the TTIP flow rate which is introduced by its own vapor pressure, whereas higher titanium partial pressure was formed through increasing the flow rate by using a carrier gas (CG). Then the precursor partial pressures [TTIP+CG] = 0:027 Pa and 0.093 Pa were obtained. At $V_f$, all the films exhibit a columnar structure, but the degree of inhomogeneity is decreased with the precursor partial pressure. Phase transformation from anatase ([TTIP] < 0.013 Pa) to amorphous ([TTIP+CG] = 0:093 Pa) has been evidenced since the $O^+_2$ ion to neutral flux ratio in the plasma was decreased and more carbon contained in the film. However, in the case of -50 V, the related growth rate for different precursor partial pressures is slightly (~15%) decreased. The columnar morphology at [TTIP] < 0.013 Pa has been changed into a granular structure, but still homogeneous columns are observed for [TTIP+CG] = 0:027 Pa and 0.093 Pa. Rutile phase has been generated at [TTIP] < 0:013 Pa. Ellipsometry measurements were performed on the films deposited at -50 V; results show that the precursor addition from low to high levels leads to a decrease in refractive index.

• 한국전기전자재료학회논문지
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• 제19권12호
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• pp.1134-1139
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• 2006

Electrical, optical, and structural properties of indium zinc oxide (IZO) anode films grown by a RF magnetron sputtering were investigated as functions of RF power and working pressure in pure Ar ambient. To investigate electrical, optical and structural properties of IZO anode films, 4-point probe and UV/VIS spectrometry, and X-ray diffraction (XRD) were performed, respectively. A sheet resistance of $15.2{\Omega}/{\square}$, average transmittance above 80 % in visible range, expecially above 85 % in 550 nm, and root mean square roughness of 1.13 nm were obtained from optimized IZO anode films grown in oxygen free ambient. All samples show amorphous structure regardless of RF power and working pressure due to low substrate temperature. In addition, XPS depth profile obtained from IZO/PES exhibits that there is no obvious evidence of interfacial reaction between IZO and PES substrate. Furthermore, current-voltage-luminance of the flexible phosphorescent flexible OLEDs fabricated on IZO anode shows dependence on sheet resistance of the IZO anode. These results indicate that the IZO anode is a promising candidate to substitute conventional ITO anode for high-quality flexible displays.

• 한국세라믹학회지
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• 제37권2호
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• pp.168-173
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• 2000

YMnO3 thin films were prepared on Pt/Ti/SiO2/Si substrate by chemical solution deposition method. The films were crystallized by heat-treatment at 85$0^{\circ}C$ for 1 hour. Effects of an annealing atmosphere(O2, Ar, vacuum) on the crystallization behavior and electridcal properties were investigated. YMnO3 thin films annealed under Ar atmosphere showed a superior crystallinity and a very strong c-aix preferred-orientation which was a polar axis. Leakage current density of the films decreased with lowering oxygen partial pressure of the annealing atmosphere. C-V and P-E ferroelectric hysteresis were observed only in the thin film heat-treated under Ar atmosphere.In order to prepare YMnO3 thin films having both low leakage current and ferroelectricity, the annealing atmsphere should be kept under a proper oxygen partial pressure which was about 1 Pa in this work. Leakage current density at 1 volt, dielectric constant($\varepsilon$r), remanent polarization(Pr), and coercive field(Ec) were 1.7$\times$10-8 A/$\textrm{cm}^2$, 25, 1.08$\mu$C/$\textrm{cm}^2$, and 100 kV/cm, respectively.

• 한국표면공학회지
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• 제30권6호
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• pp.406-411
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• 1997

Transparent conductive thin films have found many applications in active and passive electronic and opto-electronic devices such as flat panel display electrode, solar cell electrode and window heat mirror, etc. Low resistivity and high transmittance of these films can beotained by controlling deposition parameters which are oxygen partial pressure, substrate temperature and dopant concentration. In this study, non-stoichiometric and Sb-doped thin electrical properties of undoped films have been degraded with increase of substrate temperature and optical properties have been improved in Sb-doped films. The resistivity of $2.5\times10^{-3}\Omega\textrm{cm}$,/TEX>, average transmittance of 80% and sheet resistance of 130$\Omega$/$\square$ at thickess of 2000 $\AA$ could be obrained at optmal condimal conditions which were at $400^{\circ}C$ of substrate temperature, 58% of oxygen partial pressure and 5% of Sb doping concentration.

• ETRI Journal
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• 제27권4호
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• pp.405-410
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• 2005

High quality indium tin oxide (ITO) thin films were grown by pulse laser deposition (PLD) on flexible polyethersulphone (PES) substrates. The electrical, optical, and surface morphological properties of these films were examined as a function of substrate temperature and oxygen pressure. ITO thin films, deposited by PLD on a PES substrate at room temperature and an oxygen pressure of 15 mTorr, have a low electrical resistivity of $2.9{\times}10^{-4}{\Omega}cm$ and a high optical transmittance of 84 % in the visible range. They were used as the anode in organic light-emitting diodes (OLEDs). The maximum electro luminescence (EL) and current density at 100 $cd/m^2$ were 2500 $cd/m^{2}$ and 2 $mA/m^{2}$, respectively, and the external quantum efficiency of the OLEDs was found to be 2.0 %.

• 한국재료학회지
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• 제21권12호
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• pp.703-707
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• 2011

The electrochromic properties of tungsten oxide films grown by RF sputtering were investigated. Among the sputter parameters, first the $Ar:O_2$ ratios were controlled with division into only an $O_2$ environment, 1:1 and 4:1. The structure of each film prepared by these conditions was studied by X-ray diffraction, X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy. The sputter-deposited tungsten oxide films had an amorphous structure regardless of the $Ar:O_2$ ratios. The chemical compositions, however, were different from each other. The stoichiometric structure and low-density film was obtained at higher $O_2$ contents. Electrochemical tests were performed by cyclic voltammetry and chronoamperometry at 0.05 M $H_2SO_4$ solutions. The current density and charge ratio was estimated during the continuous potential and pulse potential cycling at -0.5 V and 1.8 V, respectively. The film grown in a higher oxygen environment had a higher current density and a reversible charge reaction during intercalation and deintercalation. The in-situ transmittance tests were performed by He-Ne laser (633 nm). At higher oxygen contents, a big transmittance difference was observed but the response speed was too slow. This was likely caused by higher film resistivity. Furthermore, the effect of sputtering pressure was also investigated. The structure and surface morphology of each film was observed by X-ray diffraction and scanning electron microscopy. A rough surface was observed at higher sputtering pressure, and this affected the higher transmittance difference and coloration efficiency.