• Title/Summary/Keyword: low oxygen pressure

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Study on the Correlation between Thermal Characteristics and Heat Accumulation in the Coal Pile (석탄의 열적 특성과 석탄 내부의 승온 특성과의 상관관계 연구)

  • Lee, Hyun-Dong;Kim, Jae-Kwan
    • Journal of the Korean Society of Combustion
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    • v.15 no.4
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    • pp.58-64
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    • 2010
  • Spontaneous ignition tests of five different coals with non-iso-thermal and iso-thermal test method based on the standard test procedure of NF T20-036 were carried. These five coals included the 2 low rank coals and 3 bituminous coals. Test results showed that the ignition temperatures of all coals at the iso-thermal conditions were higher than that of non-isothermal condition, and those of low rank SM and BR coal in both nonisothermal and isothermal conditions were lower than bituminous AN and CN coals. The chemical species of coals such as oxygen and hematite also plays an important role in enhancing the ignition rate that the ignition temperature of SM coal was lowered. The heat accumulation tendency of five coals inside outdoor stack pile was monitored with emphasis on the change in the temperature of the coal depth in stack pile. In case of low rank BR coal, its temperature inside coal stack pile due to the rate of high heat accumulation and oxidation was $59^{\circ}C$ compared to $51^{\circ}C$ for other SW bituminous coal. And the heat accumulation rate inside coal stack piles was increased with increased the Cp value which it was defined as the specific heat of coal at constant pressure, whereas other factors such as thermal diffusivity and conductivity of coal relatively had less effect on heat accumulation.

A Study on the Cleaning Characteristics according to the process gas of Low-Pressure Plasma (저압 플라즈마 세정가스에 따른 세정특성 연구)

  • Koo, H.J.;Ko, K.J.;Chung, C.K.
    • Clean Technology
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    • v.7 no.3
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    • pp.203-214
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    • 2001
  • A silicon oxide cleaning characteristic and its mechanism were studied in RF plasma cleaning system with various gases such as $CHF_3$, $CF_4$, Argon, oxygen and mixing gas. The experimental parameters - working pressure (100 mTorr), RF power (300 W, 500 W), electrode distance (5cm, 8cm, 11.5cm), cleaning time (90, 180 seconds), gas flow (50 sccm) were fixed to compare cleaning efficiency by gas types. The results were as follows. First, the argon plasma is retaining only physical sputtering effect and etch rate was low. Second, the oxygen plasma showed good cleaning efficiency in electrode distace of 5cm, 300W, 180secs, but surface roughness increased. Third, $CF_4$ Plasma could get the best cleaning efficiency. Fourth, $CHF_3$ plasma could know that addition gas that can lower the CFx/F ratio need. We could not get good cleaning efficiency in case of added argon to $CHF_3$. But, we could get good cleaning efficiency in case added oxygen.

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A Stress Analysis for Pressure Vessel to Prevent Spontaneous Ignition of Coal Stockpile (저탄장 자연발화 방지를 위한 압력용기의 응력 해석)

  • Kim, Young In;Kim, Seung Hun;Jie, Min-Seok;Yeum, Chan Sub;Choi, Won Hyuck
    • Journal of Advanced Navigation Technology
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    • v.22 no.3
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    • pp.205-212
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    • 2018
  • Spontaneous ignition is not only severe economic damage but also a typical plant damage caused by harmful gases generated during the fire. Because coal is porous, it causes oxygen to be absorbed in the amount of oxygen per unit weight of oxygen, resulting in low humidity and low thermal conductivity. The cause and effect of spontaneous ignition are very complex, so it is difficult to prevent it beforehand and once it is difficult to digest it, it is difficult to digest it. This study examines structural safety by conducting a structural analysis of the cooling ball system to prevent spontaneous combustion of coal stockpile plants and external pressures.

Influence of Oxygen Partial Pressure on ZnO Thin Films for Thin Film Transistors

  • Kim, Jae-Won;Kim, Ji-Hong;Roh, Ji-Hyoung;Lee, Kyung-Joo;Moon, Sung-Joon;Do, Kang-Min;Park, Jae-Ho;Jo, Seul-Ki;Shin, Ju-Hong;Yer, In-Hyung;Koo, Sang-Mo;Moon, Byung-Moo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.106-106
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    • 2011
  • Recently, zinc oxide (ZnO) thin films have attracted great attention as a promising candidate for various electronic applications such as transparent electrodes, thin film transistors, and optoelectronic devices. ZnO thin films have a wide band gap energy of 3.37 eV and transparency in visible region. Moreover, ZnO thin films can be deposited in a poly-crystalline form even at room temperature, extending the choice of substrates including even plastics. Therefore, it is possible to realize thin film transistors by using ZnO thin films as the active channel layer. In this work, we investigated influence of oxygen partial pressure on ZnO thin films and fabricated ZnO-based thin film transistors. ZnO thin films were deposited on glass substrates by using a pulsed laser deposition technique in various oxygen partial pressures from 20 to 100 mTorr at room temperature. X-ray diffraction (XRD), transmission line method (TLM), and UV-Vis spectroscopy were employed to study the structural, electrical, and optical properties of the ZnO thin films. As a result, 80 mTorr was optimal condition for active layer of thin film transistors, since the active layer of thin film transistors needs high resistivity to achieve low off-current and high on-off ratio. The fabricated ZnO-based thin film transistors operated in the enhancement mode with high field effect mobility and low threshold voltage.

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Growth behavior on initial layer of ZnO:P layers grown by magnetron sputtering with controlled by $O_2$ partial pressure

  • Kim, Yeong-Lee;An, Cheol-Hyeon;Bae, Yeong-Suk;Kim, Dong-Chan;Jo, Hyeong-Gyun
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.28.1-28.1
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    • 2009
  • The superior properties of ZnO such as high exciton binding energy, high thermal and chemical stability, low growth temperature and possibility of wet etching process in ZnO have great interest for applications ranging from optoelectronics to chemical sensor. Particularly, vertically well-aligned ZnO nanorods on large areas with good optical and structural properties are of special interest for the fabrication of electronic and optical nanodevices. Currently, low-dimensional ZnO is synthesized by metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), thermal evaporation, and sol.gel growth. Recently, our group has been reported about achievement the growth of Ga-doped ZnO nanorods using ZnO seed layer on p-type Si substrate by RF magnetron sputtering system at high rf power and high growth temperature. However, the crystallinity of nanorods deteriorates due to lattice mismatch between nanorods and Si substrate. Also, in the growth of oxide using sputtering, the oxygen flow ratio relative to argon gas flow is an important growth parameter and significantly affects the structural properties. In this study, Phosphorus (P) doped ZnO nanorods were grown on c-sapphire substrates without seed layer by radio frequency magnetron sputtering with various argon/oxygen gas ratios. The layer change films into nanorods with decreasing oxygen partial pressure. The diameter and length of vertically well-aligned on the c-sapphire substrate are in the range of 51-103 nm and about 725 nm, respectively. The photoluminescence spectra of the nanorods are dominated by intense near band-edge emission with weak deep-level emission.

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Low Temperature Processing of $SrBi_2Ta_2O_9$ Thin Films

  • Choelhwyi Bae;Lee, Jeon-Kook;Park, Dongkyun;Jung, Hyung-Jin
    • The Korean Journal of Ceramics
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    • v.6 no.2
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    • pp.110-115
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    • 2000
  • $SrBi_2Ta_2O_9$ thin films were deposited at room temperature on the usual (111) oriented Pt bottom electrodes using r.f. magnetron sputtering, and then post-annealed at 650-$800^{\circ}C$ for 30min in oxygen flow. Low temperature processing which shows the preferred oriented SBT thin films was obtained by controlling the sputtering pressure and/or Sr content in target. The orientation and grain growth behavior of SBT thin films were dependent on Sr contents in films. With increasing the excess Bi content up to 50% in SBT thin films, it was possible to lower the onset temperature of grain growth. The c-axis preferred oriented SBT thin films were well-grown under the condition of low post-annealing($650^{\circ}C$) by lowering post-annealing pressure. After $10^{11}$ switching cycles, no polarization degradation was observed in both preferred oriented SBT capacitors.

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Analysis of the Flow Rate for a Natural Cryogenic Circulation Loop during Acceleration and Low-gravity Section (극저온 자연순환회로의 가속 및 저중력 구간 유량 분석)

  • Baek, Seungwhan;Jung, Youngsuk;Cho, Kiejoo
    • Journal of the Korean Society of Propulsion Engineers
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    • v.23 no.5
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    • pp.43-52
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    • 2019
  • Cryogenic propellant rockets utilize a natural circulation loop of cryogenic fluid to cool the engine inlet temperature before launch. The geometric information about the circulation system, such as length and diameter of the pipes and the heat input to the system, defines the mass flow rate of the natural circulation loop. We performed experiments to verify the natural circulation mass flow rate and compared the results with the analytical results. The comparison of the mass flow rate between experiments and numerical simulations showed a 12% offset. We also included a prediction of the natural circulation flow rate in the low-gravity section and in the acceleration section in the upper stage of the launch vehicle. The oxygen tank should have 100 kPa(a) of pressure in the acceleration section to maintain a high flow rate for the natural circulation loop. In the low-gravity section, there should be an optimal tank pressure that leads to the maximum natural circulation flow rate.

Magnetic Properties and Microstructure of Co Thin Films by RF-diode Sputtering Method (RF-diode Sputtering법으로 제작한 Co박막의 자기특성과 미세구조)

  • Han, Chang-Suk;Kim, Sang-Wook
    • Korean Journal of Materials Research
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    • v.28 no.3
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    • pp.159-165
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    • 2018
  • In order to increase the efficiency of the sputtering method widely used in thin film fabrication, a dc sputtering apparatus which supplies both high frequency and magnetic field from the outside was fabricated, and cobalt thin film was fabricated using this apparatus. The apparatus can independently control the applied voltage, the target-substrate distance, and the target current, which are important parameters in the sputtering method, so that a stable glow discharge is obtained even at a low gas pressure of $10^{-3}$ Torr. The fabrication conditions using the sputtering method were mainly performed in $Ar+O_2$ mixed gas containing about 0.6 % oxygen gas under various Ar gas pressures of 1 to 30 mTorr. The microstructure of Co thin films deposited using this apparatus was examined by electron diffraction pattern and X-ray techniques. The magnetic properties were investigated by measuring the magnetization curves. The microstructure and magnetic properties of Co thin films depend on the discharge gas pressure. The thin film fabricated at high gas pressure showed a columnar structure containing a large amount of the third phase in the boundary region and the thin film formed at low gas pressure showed little or no columnar structure. The coercivity in the plane was slightly larger than that in the latter case.

Ablative Characteristics of Carbon/Carbon Composites by Liquid Rocket

  • Joo, Hyeok-Jong;Min, Kyung-Dae;Lee, Nam-Joo
    • Carbon letters
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    • v.2 no.3_4
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    • pp.192-201
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    • 2001
  • The Carbon/Carbon composite was prepared from 3D carbon fiber preform and coal tar pitch as matrix precursor. In order to evaluate of ablative characteristics of the composite, liquid rocket system was employed Kerosene and liquid oxygen was used as propellants, operating at a nominal chamber pressure of 330 psi and a nominal mixture ratio (O/F) of 2.0. The results of an experimental evaluation were that high density composite exhibited high, while low density composites showed low erosion resistance. The erosion rate against heat flux was highly depended on the density of the materials. The morphology of eroded fiber showed differently according to collision angle with heat flux on the composite. The granular matrix which derived from carbonization pressure of 900 bar was more resistance to heat flux than well-developed flow type matrix.

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A Study on the Magnetic Properties and Microstructures of Ni-Fe/NiO Bilayers with Various Ar Presure in NiO Deposition (NiO 증착시의 Ar 압력 변화에 따른 Ni-Fe/NiO 이층막의 자기적특성과 미세구조에 대한 연구)

  • 노재철;이두현;김용성;서수정;박경수
    • Journal of the Korean Magnetics Society
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    • v.8 no.6
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    • pp.369-373
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    • 1998
  • The exchange anisotropy between NiO antiferromagnetic layer and NiFe ferromagnetic layer has been investigated in NiFe(10 nm)/NiO(60 nm) formed by magnetron sputtering. The NiO films were sputtered from nickel oxide using R. F. poser and NiFe, Ta were deposited using D. C. power under Ar atmosphere. Above all. we studied the exchange anisotropy of Ni-Fe/NiO bilayer, and focused especially on the effect of NiO depostion condition. Our experimental data showed that the dominant factor for determining the exchange anisotropy properties was the Ar pressure during NiO deposition. The better exchange anisotropy properties were found when the NiO film was deposited at low Ar pressure probably due to the flatten interface and the epitaxial tendency of NiO grains and NiFe grains. However, as Ar pressure increased, interfacial diffusion at NiFe/NiO interface and oxygen content of NiO film increase, and consequently reduced the exchange anisotropy. We concluded that the flatten interface and relatively low oxygen content of NiO layer are dominant factors for the enhancement of the exchange anisotropy in NiFe/NiO bilayer.

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