• Title/Summary/Keyword: low leakage

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Annealing Effects of Tunneling Dielectrics Stacked $SiO_2/Si_3N_4$ Layers for Non-volatile Memory (비휘발성 메모리를 위한 $SiO_2/Si_3N_4$ 적층 구조를 갖는 터널링 절연막의 열처리 효과)

  • Kim, Min-Soo;Jung, Myung-Ho;Kim, Kwan-Su;Park, Goon-Ho;Jung, Jong-Wan;Chung, Hong-Bay;Cho, Won-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.128-129
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    • 2008
  • The annealing effects of $SiO_2/Si_3N_4$ stacked tunneling dielectrics were investigated. I-V characteristics of band gap engineered tunneling gate stacks consisted of $Si_3N_4/SiO_2/Si_3N_4$(NON), $SiO_2/Si_3N_4/SiO_2$(ONO) dielectrics were evaluated and compared with $SiO_2$ single layer using the MOS(Metal-Oxide-Semiconductor) capacitor structure. The leakage currents of engineered tunneling barriers (ONO, NON stacks) are lower than that of the conventional $SiO_2$ single layer at low electrical field. Meanwhile, the engineered tunneling barriers have larger tunneling current at high electrical field and improved electrical characteristics by annealing processes than $SiO_2$ layer.

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Schottky barrier polycrystalline silicon thin film transistor by using platinum-silicided source and drain (플레티늄-실리사이드를 이용한 쇼트키 장벽 다결정 박막 트랜지스터트랜지스터)

  • Shin, Jin-Wook;Choi, Chel-Jong;Chung, Hong-Bay;Jung, Jong-Wan;Cho, Won-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.80-81
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    • 2008
  • Schottky barrier thin film transistors (SB-TFT) on polycrystalline silicon(poly-Si) are fabricated by platinum silicided source/drain for p-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method. The fabricated poly-Si SB-TFTs showed low leakage current level and a large on/off current ratio larger than $10^5$. Significant improvement of electrical characteristics were obtained by the additional forming gas annealing in 2% $H_2/N_2$ ambient, which is attributed to the termination of dangling bond at the poly-Si grain boundaries as well as the reduction of interface trap states at gate oxide/poly-Si channel.

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Electrical Properties of Metal - Insulator- Metal Diode for AM-LCD Driving

  • Kim, Jang-Kwon;Lee, Myung-Jae;Kim, Dong-Sik;Chung, Kwan-Soo
    • Proceedings of the IEEK Conference
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    • 2002.07b
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    • pp.1125-1128
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    • 2002
  • Tantalum pentoxide (Ta$_2$O$\sub$5/) is a candidate for use in metal-insulator-metal diode in switching devices for active-matrix liquid-crystal displays. The MIM diode with very low threshold voltage and perfect symmetry was fabricated. High quality Ta$_2$O$\sub$5/ thin films were obtained by using an anodizing method. Rutherford backscattering spectroscopy, transmission electron microscope observations, auger electron spectroscopy, ellipsometry measurements, and electrical measurements, such as current - voltage(I-V) measurements were performed to investigate Ta$_2$O$\sub$5/ films and their reliability and indicated that the obtained TaOx thin films were reliable Ta$_2$O$\sub$5/ films for the applications. Furthermore, in this paper, we discuss the effects of top-electrode metals and annealing conditions. The conduction mechanism of the leakage current and the symmetry characteristics related to the Schottky emission and Poole-Frankel effect are also discussed using the results of electrical measurements and conduction barrier theory.

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Design and Evaluation of Cascode GaN FET for Switching Power Conversion Systems

  • Jung, Dong Yun;Park, Youngrak;Lee, Hyun Soo;Jun, Chi Hoon;Jang, Hyun Gyu;Park, Junbo;Kim, Minki;Ko, Sang Choon;Nam, Eun Soo
    • ETRI Journal
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    • v.39 no.1
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    • pp.62-68
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    • 2017
  • In this paper, we present the design and characterization analysis of a cascode GaN field-effect transistor (FET) for switching power conversion systems. To enable normally-off operation, a cascode GaN FET employs a low breakdown voltage (BV) enhancement-mode Si metal-oxide-semiconductor FET and a high-BV depletion-mode (D-mode) GaN FET. This paper demonstrates a normally-on D-mode GaN FET with high power density and high switching frequency, and presents a theoretical analysis of a hybrid cascode GaN FET design. A TO-254 packaged FET provides a drain current of 6.04 A at a drain voltage of 2 V, a BV of 520 V at a drain leakage current of $250{\mu}A$, and an on-resistance of $331m{\Omega}$. Finally, a boost converter is used to evaluate the performance of the cascode GaN FET in power conversion applications.

Miniaturized Radio Frequency Choke Using Modified Stubs for High Isolation in MIMO Systems

  • Lim, Seonho;Choi, Woo Cheol;Yoon, Young Joong
    • Journal of electromagnetic engineering and science
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    • v.15 no.4
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    • pp.219-223
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    • 2015
  • In this paper, a miniaturized radio frequency choke (RFC) using modified stubs is proposed to improve isolation characteristics in a multiple-input-multiple-output (MIMO) antenna system. The proposed RFC, based on the LC resonance, is designed to suppress the leakage current that leads to the degradation of antenna diversity performances in the MIMO antenna configuration. The proposed RFC is composed of two open stubs that are implemented on the top of the ground plane and miniaturized by adding a slit structure on the ground plane. The MIMO antennas are also designed to verify isolation performance in the LTE 2300 band (2,300-2,400 MHz). The MIMO antennas perform well with low reflection coefficient characteristics and high isolation characteristics in the whole LTE 2300 band. To evaluate the isolation in the MIMO system, the envelope correlation coefficient (ECC) is calculated, and the value is less than 0.08. The achieved ECC is regarded as a reasonable result for improving isolation performance in the frequency range of 2,300-2,400 MHz; also, radiation patterns of antenna elements are maintained regardless of the presence of RFC.

Formulation and Antimicrobial Activity on Escherichia coli of Nanoemulsion Coated with Whey Protein Isolate

  • Bejrapha, Piyawan;Choi, Mi-Jung;Surassmo, Suvimol;Chun, Ji-Yeon;Min, Sang-Gi
    • Food Science of Animal Resources
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    • v.31 no.4
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    • pp.543-550
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    • 2011
  • Various concentrations of whey protein isolate (WPI), such as 0.1, 0.5, 1.0, 2.5, and 5.0%(w/v), containing 1.0%(w/v) eugenol were prepared by high speed homogenization to formulate nanoemulsions (NEs) and to investigate their antimicrobial activity. The results showed that particle size decreased according to increases in WPI concentration. Similarly, the ${\zeta}$-potential value was reduced to a negative charge when using WPI concentrations >0.1%(w/v). In contrast, no significant differences in particle size were observed during 1 mon of storage, except for the 0.1%(w/v) WPI NE. The ${\zeta}$-potential value depended on the increase in WPI concentration and storage duration, except for NE1 and NE5, suggesting that a low or high concentration of emulsifier was not effective for maintaining the droplet form of the eugenol NE. The results of an antibacterial effect investigation indicated that the growth of Escherichia coli was inhibited based on an increase in eugenol concentration in all NE formulations. Moreover, a membrane permeability study showed that total leakage content increased according to incubation time.

Study on 3D Numerical Analysis of Stack Effect Reduction in Stairwell of Building (건축물 계단에서의 연돌효과 저감방안에 대한 3차원 수치해석 연구)

  • Kim, Jung-Yup;Kim, Ji-Seok
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.27 no.3
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    • pp.152-157
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    • 2015
  • Stack effect on high-rise building have negative effect on living environment, energy and life-safety aspect. Thus, it's necessary to find the measure to reduce the stack effect. As a result of field test on a 31-story building, a circulating type stack effect reduction technology was developed, which supplies air in the low stairs and discharges air in the high stairs. To evaluate the performance of this circulating type stack effect reduction technology on building stairs, a 3D numerical analysis was carried out by using Momentum Loss Model for analyzing leakage flow between compartments in a building. Consequently, numerical analysis proved that the stack effect on building stairs was reduced by a circulating type stack effect reduction technology.

Technical Investigation into the In-situ Electron Backscatter Diffraction Analysis for the Recrystallization Study on Extra Low Carbon Steels

  • Kim, Ju-Heon;Kim, Dong-Ik;Kim, Jong Seok;Choi, Shi-Hoon;Yi, Kyung-Woo;Oh, Kyu Hwan
    • Applied Microscopy
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    • v.43 no.2
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    • pp.88-97
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    • 2013
  • Technical investigation to figure out the problems arising during in-situ heating electron backscatter diffraction (EBSD) analysis inside scanning electron microscopy (SEM) was carried out. EBSD patterns were successfully acquired up to $830^{\circ}C$ without degradation of EBSD pattern quality in steels. Several technical problems such as image drift and surface microstructure pinning were taking place during in-situ experiments. Image drift problem was successfully prevented in constant current supplying mode. It was revealed that the surface pinning problem was resulted from the $TiO_2$ oxide particle formation during heating inside SEM chamber. Surface pinning phenomenon was fairly reduced by additional platinum and carbon multi-layer coating before in-situ heating experiment, furthermore was perfectly prevented by improvement of vacuum level of SEM chamber via leakage control. Plane view in-situ observation provides better understanding on the overall feature of recrystallization phenomena and cross sectional in-situ observation provides clearer understanding on the recrystallization mechanism.

Drought Resistance Assessment of Ground Cover Plants for Low Management and Light Weight Green Roof System (저관리·경량형 옥상녹화를 위한 지피식물의 내건성 평가)

  • Zhao, Hong-Xia;Kang, Tai-Ho
    • Journal of the Korean Society of Environmental Restoration Technology
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    • v.16 no.1
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    • pp.83-97
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    • 2013
  • This study was carried out to suggest an experimental base in selecting the drought resistance of plants. Adopting the natural drought method, this paper studies the drought resistance of 12 kinds of ground cover plants. focusing on analyzing the changes of relative water content on leaf, relative electric conductivity and chlorophyll content in 12 kinds of plants, and and the relation between soil water content under drought stress. The drought resistance of the plants were subject to laboratory and rooftop drought resistance treatments. The Logistic model of nonlinear regression analysis was used to evaluate the lethal time that were predicted with the range of 10.4~30.1d on roof top, and 19.5~39.0d on hothouse. The result shows that with the increase of stress time, relative water content and chlorophyll content on leaf were in a downward trend; the relative electric conductivity was upward tendency. Among 12 species of ground cover plants, exclude Pulsatilla koreana, Ainsliaea acerifolia were selected for rooftop plants because they showed resist drought strongly and took adaptive ability.

Dielectric properties of Pt/PVDF/Pt modified by low energy ion beam irradiation

  • Sung Han;Yoon, Ki-Hyun;Jung, Hyung-Jin;Koh, Seok-Keun
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.110-110
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    • 1999
  • Polyvinylidenefluoride (PVDF) is most used in piezoelectric polymer industry. Electrode effect on the electrical properties of PVDF has been investigated. al has been used due to fair adhesion for PVDF. Work function of metal plays an important role on the electrical properties of ferroelectrics for top and /or bottom electrode. However, Al has much lower work function than Pt or Au and so leakage current of Al/PVDF/Al may be large. Pt or Au has not been used for electrode of PVDF system due to poor adhesion. PVDF irradiated by Ar+ ion beam with O2 environment takes good adhesion to inert metal. Contact angle of PVDF to triple distilled water was reduced from 75$^{\circ}$ to 31$^{\circ}$ at 1$\times$1015 Ar+/cm2. Working pressure was 2.3$\times$10-4 Torr and base pressure was 5$\times$10-6 Torr. Pt was deposited by ion beam sputtering and thickness of pt film was about 1000$\AA$. in previous study, enhancing adhesion of Pt on PVDF was shown. in this study, effect of electrode on PVDF will be represented.

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