• Title/Summary/Keyword: low leakage

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Effect of Phenyl Vinyl Methyl Silicone (PVMQ) on Low Temperature Sealing Performance of Fluorosilicone Composites

  • Lee, Jin Hyok;Bae, Jong Woo;Choi, Myoung Chan;Yun, Yu-Mi;Jo, Nam-Ju
    • Elastomers and Composites
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    • v.56 no.4
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    • pp.209-216
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    • 2021
  • In this study, we observed the mechanical properties, thermal stability, and low temperature sealing performance of fluorosilicone elastic composites. When the blend ratio of Phenyl vinyl methyl silicone (PVMQ) was increased, the tensile strength, modulus at 100%, and compression set were decreased. The thermal stability of fluorosilicone elastic composites showed a similar tendency. These were caused by poorer green strength of PVMQ than Fluorosilicone rubber (FVMQ). The change in the tensile strength and elongation at -40℃ showed a decreasing tendency with increasing PVMQ blend ratio. By increasing the PVMQ blend ratio, low-temperature performance was improved. The Dynamic mechanical analysis (DMA) results showed that Tg was decreased and low-temperature performance was improved with increasing PVMQ blend ratio. However tanδ was decreased becaused of the poor green strength and elasticity of PVMQ. From a hysteresis loss at -40℃, the hysteresis loss value was increased and fluorosilicone elastic composites showed the decreasing tendency of elasticity with increasing PVMQ blend ratio. From the TR test, TR10 was decreased with increasing PVMQ blend ratio. FS-4 (45% PVMQ blended composites) showed a TR10 of -68.0℃ that was 5℃ lower than that of FS-1 (100% FVMQ). The gas leakage temperature was decreased with increasing PVMQ blend ratio. The gas leakage temperature of FS-4 was -69.2℃ that was 5℃ lower than that of FS-1. Caused by the polymer chain started to transfer from a glassy state to a rubbery state and had a mobility of chain under Tg, the gas leakage temperature showed a lower value than Tg. The sealing performance at low temperature was dominated by Tg that directly affected the mobility of the polymer chain.

A Gate-Leakage Insensitive 0.7-V 233-nW ECG Amplifier using Non-Feedback PMOS Pseudo-Resistors in 0.13-μm N-well CMOS

  • Um, Ji-Yong;Sim, Jae-Yoon;Park, Hong-June
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.10 no.4
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    • pp.309-315
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    • 2010
  • A fully-differential low-voltage low-power electrocardiogram (ECG) amplifier by using the nonfeedback PMOS pseudo-resistors is proposed. It consists of two operational-transconductance amplifiers (OTA) in series (a preamplifier and a variable-gain amplifier). To make it insensitive to the gate leakage current of the OTA input transistor, the feedback pseudo-resistor of the conventional ECG amplifier is moved to input branch between the OP amp summing node and the DC reference voltage. Also, an OTA circuit with a Gm boosting block without reducing the output resistance (Ro) is proposed to maximize the OTA DC gain. The measurements shows the frequency bandwidth from 7 Hz to 480 Hz, the midband gain programmable from 48.7 dB to 59.5 dB, the total harmonic distortion (THD) less than 1.21% with a full voltage swing, and the power consumption of 233 nW in a 0.13 ${\mu}m$ CMOS process at the supply voltage of 0.7 V.

Ultra shallow $p^{+}$n junction formation using the boron diffusin form epi-co silicide (에피 코발트 실리사이드막으로 부터의 붕소 확산을 이용한 극저층 $p^{+}$n 접합 형성)

  • 변성자;권상직;김기범;백홍구
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.7
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    • pp.134-142
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    • 1996
  • The epi-CoSi$_{2}$ layer was formed by alloying a Co(120$\AA$)/Ti(50$\AA$) bilayer. In addition, the ultra shallow p$^{+}$n junction of which depth is about not more than 40nm at the background concentration, 10$^{18}$atoms/cm$^{3}$ could be formed by annealing (RTA-II) the ion implanted epi-silicide. When the temperature of RTA-I is as low as possible and that of RTA-II is moderate, the p$^{+}$n junction that has low leakage current and stable epi-silicide layer could be obtained. That is, when th econdition of TRA-I was 900$^{\circ}C$/20sec and that of RTA-II was 900$^{\circ}C$/10sec, the reverse leakage current was as high as 11.3$\mu$A/cm$^{2}$ at -5V. The surface of CoSi$_{2}$ appeared considerably rough. However, when the conditon of RTA-I was 800$^{\circ}C$/20sec or 700$^{\circ}C$/20sec, the leakage currents were as low as 8.3nA/cm$^{2}$ and 9.3nA/cm$^{2}$, respectively and also the surfaces appeared very uniform.

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Effect of Seed Priming on Quality Improvement of Maize Seeds in Different Genotypes

  • Seo Jung Moon;Lee Suk Soon
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.49 no.5
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    • pp.381-388
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    • 2004
  • In Korea, production of super sweet corn has been economically feasible and is substituting for traditional sweet corn due to better flavor in recent years. Major limiting factors for super sweet corn production are low field emergence and low seedling vigor. The optimum water potential (WP) for the priming of normal and aged seeds of dent, sweet (su) and super sweet (sh2) corns was studied to improve low seed quality. Seeds were primed at 0, -0.3, -0.6, -0.9, and -1.2 MPa of polyethylene glycol (PEG) 8000 solution at $15^{\circ}C$ for 2 days. Priming effects differed depending on the type of corn, seed quality, and WP of PEG solution. Although WP of priming solution did not influence the emergence rate of extremely high quality normal dent corn seeds, it reduced time to $50\%$ emergence (T50) and increased plumule weight. In contrast, the emergence rate of aged field corn was improved by seed priming at 0 MPa and plumule weight and $\alpha-amylase$ activity was enhanced. The optimum WP for both normal and aged sweet and super sweet corn seeds was between -0.3 and -0.6 Mpa. At the optimum WP emergence rate, $\alpha-amylase$ activity, and content of DNA and soluble protein increased, while T50 and leakage of total sugars and electrolytes reduced.

Thrust Analysis and Experiments on Low-Speed Single-Sided Linear Induction Motor

  • Jeong, Jae-Hoon;Choi, Jang-Young;Sung, So-Young;Park, Jong-Won;Lim, Jaewon
    • Journal of Electrical Engineering and Technology
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    • v.12 no.1
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    • pp.230-235
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    • 2017
  • When the characteristics of a linear induction motor (LIM) are analyzed using finite element analysis (FEA), it is desirable to set the voltage source as an input. If the voltage source is set as an input in FEA, the leakage inductance and primary resistance of the equivalent circuit must be entered by direct calculation, and the magnetizing inductance and secondary reaction effects are directly considered in FEA. Exact calculation is necessary because the primary winding resistance and leakage inductance directly entered will have a significant effect on the LIM output. Therefore, in this study, we accurately calculated the primary leakage inductance and analyzed the resulting LIM characteristics. We calculated the leakage inductance using an analytical equation and FEA, and we confirmed the accuracy by comparing the results with the value experimentally calculated using a manufactured model. We also analyzed the instrument performance and thrust of the LIM as a function of the difference in the leakage inductance. Finally, we present the conclusions on the precise analysis based on the calculation of the leakage inductance.

Effects of Drugs on the Stability of Phospholipid Liposomal Membranes (수종 약물이 리포솜 지질막의 안정성에 미치는 영향)

  • Kim, Min;Han, Suk-Kyu;Kim, Chong-Kook
    • YAKHAK HOEJI
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    • v.38 no.6
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    • pp.637-645
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    • 1994
  • The effect of various drugs on the stability of the liposomal membrane of phosphatidylcholine and cholesterol was studied, employing the fluorescence self-quenching method. Calcein was entrapped into the phospholipid small unilamellar vesicles and the leakage of the fluorescence probe was monitored on adding the drug to the system. The results of the experiments showed that phenothiazine derivatives, some potent local anesthetics and surface active agents were very effective in inducing the leakage of calcein from the liposome. The leakage-inducing activity of these drug substances has been ascribed to their surface activity and the perturbation of the liposomal membrane by these substances. On the other hand drug substance with low surface activity or without amphiphilic moieties did not show any effect or only small effect on the leakage of calcein from the liposomes. The effect of lipid concentration on the stability of the liposomes was also investigated to show that the higher concentrations of lipid more drug was required to induce the leakage. The effect of surface charges of vesicles was also studied, and the results showed that the charge on the liposomes enhanced the stability of the liposomes against the leakage-inducing activity of these drug substances.

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Effect of Leakage on the Noise Reduction Characteristics of Helmholtz Resonator (누출이 헬름홀츠 공명기의 소음저감 특성에 미치는 영향)

  • Lee, Il-Jae
    • Transactions of the Korean Society for Noise and Vibration Engineering
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    • v.19 no.6
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    • pp.634-640
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    • 2009
  • Helmholtz resonator has been used, especially in intake and exhaust systems of vehicles, due to its good noise reduction characteristics at low frequencies. Many approaches have been developed to predict the acoustic behavior of the resonator with the assumption that there is no leakage from the resonator. However, its behavior may be affected by leakage which may exist in manufacturing processes or on purpose. This study investigates the effect of leakage on the noise reduction characteristics of Helmholtz resonator with two practical examples. One is a resonator with a gap between baffle and housing of the resonator and the other one is a resonator with two drain holes on the baffle. The measured transmission loss shows that the resonance frequencies are considerably shifted to higher frequency due to the leakage. The Boundary Element Method was applied to predict the transmission loss of the Helmholtz resonator with drain holes. The comparison between the measured and predicted transmission loss shows that the acoustic impedance of the holes is essential for accurate predictions of the transmission loss.

A Study on Safety Assessment of Hydrogen Station (수소충전소의 안전성 평가 연구)

  • PYO, DON-YOUNG;KIM, YANG-HWA;LIM, OCK-TAECK
    • Journal of Hydrogen and New Energy
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    • v.30 no.6
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    • pp.499-504
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    • 2019
  • Due to the rapid spread and low minimum ignition energy of hydrogen, rupture is highly likely to cause fire, explosion and major accidents. The self-ignition of high-pressure hydrogen is highly likely to ignite immediately when it leaks from an open space, resulting in jet fire. Results of the diffusion and leakage simulation show that jet effect occurs from the leakage source to a certain distance. And at the end of location, the vapor cloud explosion can be occurred due to the formation of hydrogen vapor clouds by built-up. In the result, it is important that depending on the time of ignition, a jet fire or a vapor cloud explosion may occur. Therefore, it is necessary to take into account jet effect by location of leakage source and establish a damage minimizing plan for the possible jet fire or vapor cloud explosion. And it is required to any kind of measurements such as an interlock system to prevent hydrogen leakage or minimize the amount of leakage when detecting leakage of gas.

Diagnosis Technique of Surface Aging according to Various Environment Condition for Silicon Polymer Insulator (여러환경조건에 의한 Silicon애자의 표면열화 진단기술)

  • Park, Jae-Jun;Jung, Myeong-Yeon;Lee, Seung-Wook;Kim, Jeong-Boo;Song, Young-Chul;Kim, Hee-Dong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.05b
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    • pp.76-81
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    • 2004
  • This paper presents the results of spectral analysis of leakage current waveforms on contaminated insulators under various fog and environment conditions(salt fog, clean fog, rain) The larger the leakage current during 200ms, the higer the power spectrum at 60Hz. For almost equal maximum current during 200ms, however, the spectrum at 60hz and the odd order harmonics increase emphatically when discharges occur continuously for several half-waves. If contaminated insulators suffers from high salt-density fog, the leakage current occurs with high crest value intermittently, results in the low spectrum. Analysis of leakage current data showed that this electrical activity was characterized by transient arcing behavior contaminants are deposited on the insulator surface during salt fog tests. This provides a path for the leakage current to flow along the surface of the insulator. It is important to have an indication of the pollution accumulation in order to evulate the test performance of a particular insulator. If the drop in surface resistivity is severe enough, then the leakage current may escalate into s service interrupting flashover that degrade power quality.

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I-V Characteristics of Epitaxial $CoSi_2$-contacted p+/n Junctions (Epitaxial $CoSi_2$접촉 p+/n 접합의 I-V 특성)

  • 구본철;김시중;김주연;배규식
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.11
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    • pp.908-913
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    • 2000
  • CoSi$_2$/p+/n diodes(bilayer diodes) were fabricated by using epitaxial CoSi$_2$grown from Co/Ti bilayer as a diffusion source. The I-V characteristics of p+/n diodes were measured and compared with those of diode made from Co monolayer (monolayer diode). Monolayer diodes showed typical p+n junction characteristics with the leakage current of as low as 10$^{-12}$ A and forward current 6-orders higher than the leakage current, when drive-in annealed at 90$0^{\circ}C$ for 20 sec.. On the other hand, bilayer diodes showed the Schottky-like behaviors with forward currents rather higher than those of monolyer diodes, but with too high leakage currents, when drive-in annealed at $700^{\circ}C$ or higher. However, when the annealing temperature was lowered to $700^{\circ}C$ and annealing time was increased to 60 sec., the leakage current was reduced to 10$^{-11}$ A and thus sho3wed typical diode characteristics. The high leakage currents for diodes annealed at $700^{\circ}C$ or higher was attributed to Shannon contacts formed due to unremoved Co-Ti-Si precipitates. But when annealed at 50$0^{\circ}C$, B ions diffused in the direction of the surface layer, and thus the leakage currents were reduced by removing Shannon contacts.

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