• Korean Journal of Bronchoesophagology
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• v.4 no.2
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• pp.177-181
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• 1998

Provox is now widely used for voice rehabilitation for total laryngectomized patient because of its low airway resistance and easiness for phonation. This study was designed to reveal the influence of radiation therapy on Proven complications. Forty-four patients who underwent total laryngectomy were grouped into group A (no radiation), group B(radiation and then Provox insertion), group C(Proven insertion and then radiation). Provox complications were leakage, granulation tissue formation, malfunction and infection. The average survival time of Provox was longer in group C (9.2 me) than group A(8.6 m) or group B (7.3 me), but no statistical significance was found. The first time of Provox change was 10.2, 8.6 and 9.7 months respectively. The incidence of complication was not significantly different among groups. The cases of Provox remeval due to shunt failure were 5, 4 and 2 respectively. Even though a significant statistically difference was not found partialy due to the small numbers of patients, a special caution should be exercised in inserting Provox to prevent a serious complication for the patients who had a history of previous radiation.

• Journal of Magnetics
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• v.16 no.4
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• pp.423-426
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• 2011

This paper presents numerical analysis and design of high power contactless transformer with a large air-gap for moving on a guided linear track which is appropriate for high-speed train or MAGLEV. The system has the typical characteristics of large leakage inductance, small magnetizing inductance, and low coupling coefficients giving rise to lower power transfer efficiency, which have been compensated by the purposely-designed contactless transformer coupled with the resonant converter modulating with high switching frequency. In particular, the best model selected from the generated six design candidates has been applied for 3D Finite Element Analysis (FEA) investigating on iron loss to evaluate the overall system efficiency.

• Proceedings of the KSR Conference
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• 2008.06a
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• pp.327-331
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• 2008

This paper dealt with high speed breaking method to parallel arcing in low-voltage systems. The proposed high speed breaking circuit consists of a Rogowski coil and an integrator, and operates with an earth leakage circuit breaker (ELCB). A parallel arcing state was simulated by a short circuit using stripped wires. In this test, we analyzed tripping characteristics of the circuit breaker by the length of wires from 5m to 30m. From the experimental results, we confirmed that the proposed method can break the parallel arcing within a few millisecond.

• Restorative Dentistry and Endodontics
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• v.15 no.1
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• pp.81-87
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• 1990

The purpose of this study was to evaluate the apical seal produced by low temperature($70^{\circ}C$) injection gutta percha technique(ULTRAFIL) with & without sealer, warm latero-vertical cindensation technique (ENDOTEC) with & without sealer, and the lateral condensation technique with sealer. 100 extracted, single rooted human teeth were divided into 5 groups and root canals were enlarged & obturated according to the purpose of this study. Obturated teeth were immersed in 2.5% methylene blue for 48hrs. at $37^{\circ}C$ incubator and split. The apical sealing ability was evaluated by measuring the degree of dye penetration into the canal. The results were as follows: 1. All group showed varying depth of dye penetration. 2. There were no significant difference among Group I (lateral condensation), Group II (ULTRAFIL with sealer) & Group IV (ENDOTEC with sealer) (P>0.05). 3. There were less dye penetration when used in conjunction with sealer (P<0.001).

• ETRI Journal
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• v.32 no.1
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• pp.151-153
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• 2010

A highly efficient linear and compactly integrated series-type Doherty power amplifier (PA) has been developed for wideband code-division multiple access handset applications. To overcome the size limit of a typical Doherty amplifier, all circuit elements, such as matching circuits and impedance transformers, are fully integrated into a single monolithic microwave integrated circuit (MMIC). The implemented PA shows a very low idle current of 25 mA and an excellent power-added efficiency of 25.1% at an output power of 19 dBm by using an extended Doherty concept. Accordingly, its average current consumption was reduced by 51% and 41% in urban and suburban environments, respectively, when compared with a class-AB PA. By adding a simple predistorter to the PA, the PA showed an adjacent channel leakage ratio better than -42 dBc over the whole output power range.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.124-127
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• 2004

W/n-GaN Schottky diodes were irradiated with $^{60}Co\;{\gamma}-rays$ to doses up to 315Mrad. The barrier height obtained from current-voltage (I-V) measurements showed minimal change from its estimated initial value of ${\sim}0.4eV$ over this dose range, though both forward and reverse I-V characteristics show evidence of defect center introduction at doses as low as 150 Mrad. Post irradiation annealing at $500^{\circ}C$ increased the reverse leakage current, suggesting migration and complexing of defects. The W/GaN interface is stable to high dose of ${\gamma}-rays$, but Au/Ti overlayers employed for reducing contact sheet resistance suffer from adhesion problems at the highest doses.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.3
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• pp.330-338
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• 2016

Phase change memory (PCM) has been studied as an emerging memory technology for last-level cache (LLC) due to its extremely low leakage. However, it consumes high levels of energy in updating cells and its write endurance is limited. To relieve the write pressure of LLC, we propose a delta value indicator (DVI) by employing a small cache which stores the difference between the value currently stored and the value newly loaded. Since the write energy consumption of the small cache is less than the LLC, the energy consumption is reduced by access to the small cache instead of the LLC. In addition, the lifetime of the LLC is further extended because the number of write accesses to the LLC is decreased. To this end, a delta value indicator and controlling circuits are inserted into the LLC. The simulation results show a 26.8% saving of dynamic energy consumption and a 31.7% lifetime extension compared to a state-of-the-art scheme for PCM.

• The KSFM Journal of Fluid Machinery
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• v.9 no.5 s.38
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• pp.28-35
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• 2006

Orbiter mechanism has been applied to vacuum pump design for small oxygen generator where low vacuum of about 200 mmHg is required. Performance of the designed vacuum pump has been numerically investigated: calculated volumetric and adiabatic efficiencies were 69.7% and 83.9%, respectively for leakage clearance of $10{\mu}m$. Total efficiency of the orbiter vacuum pump was 77.5%. At the shaft speed of 1700 rpm suction displacement volume of 6.3cc provided discharge flow at the rate of 2.3 liter/min with power consumption of 10.1Watt. Torque variation of the orbiter pump was only about 20% of that of diaphragm pump.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.11
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• pp.113-121
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• 1993

In the formation of the shallow p$^{+}$-n junction, the preamorphization method by As$^{+}$ ions was applied in order to avoid the boron channeling effect which is occured during the B$^{+}$ implantation especially with low energy. By As$^{+}$ pre-implant with 60KeV energy and 2*10$^{14}$ cm$^{-2}$ dose, the channelinf of B$^{+}$ ions implanted with 10keV/1.5*10$^{14}$ cm$^{-2}$ can be avoded completely. After the RTA of 1050.deg. C and 10sec, the junction depth was 0.14.mu.m, the leakage current was 20nA/cm$^{2}$(at-5V bias) and the sheet resistance was 107.OMEGA./ㅁ. And the preamorphized Si layer was changed into the perfect crystal si after the RTA.r the RTA.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.129-130
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• 2008

Polycrystalline silicon (poly-Si) Schottky barrier thin film transistors (SB-TFT) are fabricated by erbium silicided source/drain for n-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method. The fabricated poly-Si SB-TFTs have a large on/off current ratio with a low leakage current. Moreover, the electrical characteristics of poly-Si SB TFTs are significantly improved by the additional forming gas annealing in 2 % $H_2/N_2$, because the interface trap states at the poly-Si grain boundaries and at the gate oxide/poly-Si channel decreased.