• 제목/요약/키워드: low leakage

검색결과 1,336건 처리시간 0.031초

초소형 유기랭킨사이클용 스크롤팽창기 효율 특성 분석 (Analysis of Efficiencies of Scroll Expander for Micro Scale Organic Rankine cycle)

  • 신동길
    • 에너지공학
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    • 제21권4호
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    • pp.398-401
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    • 2012
  • 본 연구에서는 자동차용 엔진 폐열 회수 유기랭킨사이클에 적용하기 위해 개발 중인 스크롤 팽창기의 효율을 상용 스크롤 팽창기와 비교 분석을 수행하였다. 팽창기 효율 특성 시험을 위해 유기랭킨사이클을 운전하면서 팽창기 출력, 팽창기 입구 온도, 압력 및 작동유체(냉매 R134a)의 유량을 측정하였으며, 개발 중인 스크롤 팽창기의 전효율은 상용 스크롤 팽창기의 전효율에 비해 매우 낮은 수준을 나타내었다. 특히 팽창기 내부의 작동유체 누설에 의한 체적효율 저하가 전효율 저하에 큰 영향을 주는 것으로 파악되었기 때문에 향후 팽창기 효율 향상을 위해 팽창기 내부의 누설문제를 필히 해결해야할 것으로 분석되었다.

IEC 60364 기반 접지계통 비교 분석 (The Comparison and Analysis about Earth System based on IEC60364)

  • 정진수;한운기;김오환;김재철
    • 조명전기설비학회논문지
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    • 제24권1호
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    • pp.56-62
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    • 2010
  • 본 논문에서는 IEC 60364에서 제시하고 있는 접지계통(TT접지계통, TN-S 접지계통 및 TN-C)의 누전차단기 동작특성 및 보호도체의 임피던스변화에 따른 Loop Impedance 특성분석을 실시하였다. 분석결과 Loop Impedance의 경우 저항성분과 인턱턴스성분에 영향을 받는 것으로 나타났다. 접지계통별 전류 전압특성은 TN-S 접지계통 및 TN-C 접지계통의 경우 사고전류가 높고 접촉전압이 낮은 특성을 나타낸 반면 TT 접지계통의 경우 사고전류는 낮고 접촉전압이 높게 나타남을 확인하였다.

변압기 직렬구조의 EV용 승압형 양방향 ZCS DC/DC 컨버터 개발 (Development of Boost Type Bidirectional ZCS DC/DC Converter For EV of Transformer Series Construction)

  • 최정식;박병철;정동화;송성근
    • 조명전기설비학회논문지
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    • 제27권11호
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    • pp.37-46
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    • 2013
  • This paper proposes the boost type bidirectional zero current switching(ZCS) DC/DC converter of transformer series construction for electric vehicle operation using low voltage battery. This converter can high boost through the double voltage circuit and series construction of output part using two converters. This converter system has the advantages that bidirectional power transfer is excellent, size and making of transformer because of this converter keeps the transformation ratio to 1:1. Proposed DC/DC converter uses the ZCS method to decrease the switching loss. By replacing reactance ingredients of L-C resonance circuit for ZCS with leakage inductance ingredients of high frequency transformer and half-bridge capacitor it reduces system size and expense because of not add special reactor. It can confirm to output of high voltage to operate the electric vehicle with low voltage of input and operation of ZCS in all load region through the result of PSIM simulation and experiment.

Low-Power Voltage Converter Using Energy Recycling Capacitor Array

  • Shah, Syed Asmat Ali;Ragheb, A.N.;Kim, HyungWon
    • Journal of information and communication convergence engineering
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    • 제15권1호
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    • pp.62-71
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    • 2017
  • This paper presents a low-power voltage converter based on a reconfigurable capacitor array. Its energy recycling capacitor array stores the energy during a charge stage and supplies the voltage during an energy recycle stage even after the power source is disconnected. The converter reconfigures the capacitor array step-wise to boost the lost voltage level during the energy recycle stage. Its energy saving is particularly effective when most of the energy remaining in the charge capacitors is wasted by the leakage current during a longer sleep period. Simulations have been conducted using a voltage source of 500 mV to supply a $V_{DD}$ of around 800 mV to a load circuit consisting of four 32-bit adders in a 65-nm CMOS process. Results demonstrate energy recycling efficiency of 85.86% and overall energy saving of 40.14% compared to a conventional converter, when the load circuit is shortly active followed by a long sleep period.

A 41dB Gain Control Range 6th-Order Band-Pass Receiver Front-End Using CMOS Switched FTI

  • Han, Seon-Ho;Nguyen, Hoai-Nam;Kim, Ki-Su;Park, Mi-Jeong;Yeo, Ik-Soo;Kim, Cheon-Soo
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제16권5호
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    • pp.675-681
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    • 2016
  • A 41dB gain control range $6^{th}$-order band-pass receiver front-end (RFE) using CMOS switched frequency translated impedance (FTI) is presented in a 40 nm CMOS technology. The RFE consists of a frequency tunable RF band-pass filter (BPF), IQ gm cells, and IQ TIAs. The RF BPF has wide gain control range preserving constant filter Q and pass band flatness due to proposed pre-distortion scheme. Also, the RF filter using CMOS switches in FTI blocks shows low clock leakage to signal nodes, and results in low common mode noise and stable operation. The baseband IQ signals are generated by combining baseband Gm cells which receives 8-phase signal outputs down-converted at last stage of FTIs in the RF BPF. The measured results of the RFE show 36.4 dB gain and 6.3 dB NF at maximum gain mode. The pass-band IIP3 and out-band IIP3@20 MHz offset are -10 dBm and +12.6 dBm at maximum gain mode, and +14 dBm and +20.5 dBm at minimum gain mode, respectively. With a 1.2 V power supply, the current consumption of the overall RFE is 40 mA at 500 MHz carrier frequency.

초전도기기를 적용한 미래 저압대용량 신 배전계통 (Future New Distribution System with Low voltage and Mass Capacity using HTS equipments)

  • 윤재영;김종율;이승렬
    • 한국초전도ㆍ저온공학회논문지
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    • 제7권1호
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    • pp.37-41
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    • 2005
  • This paper describes the construction scheme of new distribution system using HTS(High Temperature Superconducting) power equipments such as cable, transformer and FCL(fault current limiter). At present, one of the most serious problems in distribution power system, especially for metropolitan complex city, is to obtain the ROW for cable line routes, space for downtown substations and satisfy the environmental protection caused by NIMBY phenomena. Unfortunately, it is expected that this situation will get more and more worse. As the HTS technology to apply in power system Is developed, HTS cable utilizing mass-capacity characteristic can be a useful countermeasure to overcome this problem. This paper describes the application methodology of 22.9kV HTS cable with low-voltage, mass-capacity characteristics replacing the 154kV conventional cable. By applying 22.9kV HTS cable, the HTS transformer with higher capacity for the reduction of space and transformer numbers of downtown substation is necessary. Also, if the leakage Impedance of HTS transformer is same as or lower than that of conventional transformer, the fault current of 22.9kV bus will increase because the HTS transformer capacity is larger than that of the conventional transformer. This means the parallel application of HTS-FCL to reduce the fault current in addition to the HTS cable and transformer can be necessary. With the basic construction scheme of new distribution system, this paper describes the future study points to realize this new distribution system using HTS equipments.

직접 스크린 프린팅법으로 제조된 고분자 전해질 연료전지의 고성능 전극 (High Performance Electrode of Polymer Electrolyte Membrane Fuel Cells Prepared by Direct Screen Printing Process)

  • 임재욱;최대규;류호진
    • 마이크로전자및패키징학회지
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    • 제11권1호
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    • pp.65-69
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    • 2004
  • 스크린 프린팅법은 고분자 전해질 연료전지의 전극 촉매층 제조의 편리함과 적용성의 면에서 가장 일반적인 방법 중에 하나이다. 본 논문은 기존의 방법과 비교하여 매우 낮은 백금 함침량을 가지기 때문에 경쟁적이고, 부가적인 공정 없이 swelling 문제를 간단하게 억제시켜 개선된 스크린 프린팅 법을 제안하였다. 특히, 가스켓 일체형 MEA는 고분자 전해질 연료전지의 작동 중에 가스 침투의 영향을 방지하여 고전류 영역에서 기존의 방법으로 제조된 MEA보다 높은 성능을 가지게 제작하였다. 이와 같은 방법들은 보다 간단하고 빠른 제조의 기회를 준다.

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Problems and improvement methods of passive treatment systems for acid mine drainage in Korea

  • Ji, Sang-Woo;Ko, Ju-In;Kim, Sun-Joon
    • 한국지구물리탐사학회:학술대회논문집
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    • 한국지구물리탐사학회 2003년도 Proceedings of the international symposium on the fusion technology
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    • pp.504-510
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    • 2003
  • This study has been carried out to evaluate the passive treatment systems for acid mine drainage in Korea and to suggest, if possible, the method for the improvement. 35 passive treatment systems in 27 mines have been constructed since 1996. SAPS, being the main process, was combined with more than one of processes such as anaerobic wetland, aerobic wetland, and oxidation pond for the construction of passive treatment system. Problems observed during the operation include the poor sulfate removal ratio, overflow, leakage, unusabless of the whole system, and inefficiency. The reasons of the poor sulfate removal ratio are believed that the low temperature during the winter prohibits the SRB activity and HRT for bacterial sulfate reduction is insufficient. An alternative method In Adit Sulfate Reducing System which enables to keep the temperature constant at about $15^{\circ}C$ was suggested. IASRS is the methods of placing the SAPS inside the adit, which enables the temperature around the system constant can be maintained. The experiments using the laboratory scaled model systems made up of four sections showed high efficiencies in pH control and metal removal ratios, but showed still low sulfate removal ratio of about $23\%$ also with high COD at the beginning of the operation.

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편재형 센서네트워크 노드를 위한 저전력 비동기 MSP430 프로세서 (A Low Power Asynchronous MSP430 Processor for Ubiquitous Sensor Network)

  • 신치훈;;오명훈;김영우;김성남;;김성운
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 심포지엄 논문집 정보 및 제어부문
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    • pp.451-453
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    • 2007
  • This paper describes the design of an asynchronous implementation of a sensor network processor. The main purpose of this work is the reduction of power consumption in sensor network node processors and the research presented here tries to explore the suitability of asynchronous circuits for this purpose. The Handshake Solutions toolkit is used to implement an asynchronous version of a sensor processor. The design is made compact, trading area and leakage power savings with dynamic power costs, targeting the typical sparse operating characteristics of sensor node processors. It is then compared with a synchronous version of the same processor. Both versions are then compared with existing commercial processors in terms of power consumption.

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Structural Evolution and Electrical Properties of Highly Active Plasma Process on 4H-SiC

  • Kim, Dae-Kyoung;Cho, Mann-Ho
    • Applied Science and Convergence Technology
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    • 제26권5호
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    • pp.133-138
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    • 2017
  • We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.