• Nuclear Engineering and Technology
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• v.49 no.7
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• pp.1379-1387
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• 2017

This paper presents a comparison of homogenization techniques implemented in the APOLLO3 platform for transport core calculations: standard scalar flux weighting and new flux-moment homogenization, in different combinations with (or without) leakage models. Besides the historical B1-homogeneous model, a new B-heterogeneous one has indeed been implemented recently in the two/three-dimensional-transport solver using the method of characteristics. First analyses have been performed on a very simple Sodium Fast Reactor core with a regular hexagonal lattice. They show that using the heterogeneous leakage model in association with flux-moment homogenization strongly improves the prediction of $k_{eff}$ and void reactivity effects. These good results are confirmed when the application is done to the fissile assemblies of the more complex CFV (Low Void Effect) core of the ASTRID (Advanced Sodium Technological Reactor for Industrial Demonstration) project of sodium-cooled fast breeder reactor (Generation IV).

• Journal of Power Electronics
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• v.15 no.5
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• pp.1217-1226
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• 2015

In a grid-connected photovoltaic (PV) system, the traditional Z-source inverter uses a low frequency transformer to ensure galvanic isolation between the grid and the PV system. In order to combine the advantages of both Z-source inverters and transformerless PV inverters, this paper presents a modified single-phase transformerless Z-source PV grid-connected inverter and a corresponding PWM strategy to eliminate the ground leakage current. By utilizing two reversed-biased diodes, the path for the leakage current is blocked during the shoot-through state. Meanwhile, by turning off an additional switch, the PV array is decoupled from the grid during the freewheeling state. In this paper, the operation principle, PWM strategy and common-mode (CM) characteristic of the modified transformerless Z-source inverter are illustrated. Furthermore, the influence of the junction capacitances of the power switches is analyzed in detail. The total losses of the main electrical components are evaluated and compared. Finally, a theoretical analysis is presented and corroborated by experimental results from a 1-kW laboratory prototype.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.23-23
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• 2010

The $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO)-Bi composite films sandwiched by an $Al_2O_3$ protection layer exhibited a linear increase of a dielectric constant with increasing thickness and the 1000nm-thick BMNO-Bi composite films showed a dielectric constant (~220) higher than that of its bulk material (~210), keeping a low leakage current density of about $0.1{\mu}A/cm^2$. An enhancement of the dielectric constant in the BMNO-Bi composite films was attributed to the hybrid model combined by a space charge polarization, dipolar response, and nano-capacitors. On the other hand, 1000nm-thick BMNO-Bi composite films sandwiched by 40nm-thick BMNO layer exhibited a dielectric constant of about 450 at 100 kHz and a leakage current density of $0.1{\mu}A/cm^2$ at 6V.

• Horticultural Science & Technology
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• v.30 no.2
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• pp.158-161
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• 2012

The influence of lysophosphatidylethanolamine (LPE) on anti-senescence of melon leaves and the change in fruit quality during the storage at low temperature were studied. In most of the crops, freshness of leaves is important factor for characteristics of fruits, such as sugar contents, color, and firmness. Melon ($Cucumis$ $melo$ L. cv. Prince) plants were sprayed with LPE at 5 and 3 weeks before commercial harvest. In upper part, LPE treatment showed slight high number of fresh leaf compared to no treatment (None). However, in lower part, LPE resulted in apparent inhibition effect on senescence, showing that lower side of melon plant kept fresh upon LPE application up to about 30%. The SSC of melon treated with LPE was similar to that of fruit from None at harvest. There was no change in soluble solids content (SSC) for all treatment during the storage at $7^{\circ}C$. There were no significant differences in firmness of mesocarp from melons given different treatments at harvest. The firmness of mesocarp from melon treated with LPE was higher than none after 2 weeks storage. The electrolyte leakage means for melon treated with LPE did not differ significantly from the means at initial storage after 2 weeks storage among the treatments. None increased 57% from its initial electrolyte leakage during storage. These results suggest that the application of LPE may have potential to inhibit senescence of leaves and maintain fruit quality during the storage in melon.

• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.168-173
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• 2000

YMnO3 thin films were prepared on Pt/Ti/SiO2/Si substrate by chemical solution deposition method. The films were crystallized by heat-treatment at 85$0^{\circ}C$ for 1 hour. Effects of an annealing atmosphere(O2, Ar, vacuum) on the crystallization behavior and electridcal properties were investigated. YMnO3 thin films annealed under Ar atmosphere showed a superior crystallinity and a very strong c-aix preferred-orientation which was a polar axis. Leakage current density of the films decreased with lowering oxygen partial pressure of the annealing atmosphere. C-V and P-E ferroelectric hysteresis were observed only in the thin film heat-treated under Ar atmosphere.In order to prepare YMnO3 thin films having both low leakage current and ferroelectricity, the annealing atmsphere should be kept under a proper oxygen partial pressure which was about 1 Pa in this work. Leakage current density at 1 volt, dielectric constant($\varepsilon$r), remanent polarization(Pr), and coercive field(Ec) were 1.7$\times$10-8 A/$\textrm{cm}^2$, 25, 1.08$\mu$C/$\textrm{cm}^2$, and 100 kV/cm, respectively.

• Journal of the Korean Ceramic Society
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• v.33 no.10
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• pp.1101-1108
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• 1996

No-doped PZT thin films have been fabricated on Pt/Ti/SiO2/Si substrate using Sol-Gel technique. A fast annealing metho (three times of intermediate and final annealing) was used for the preparation of multi-coated 1800$\AA$ thick Nb-doped PZT thin films. As Nb doping percent was increased leakage current was lowered approximately 2 order but dielectic properties were degraded due to the appearance of pyrochlore phase and domain pinning. Futhermore the increase of the final annealing temperature up to 74$0^{\circ}C$lowered the pyrochlore phase content resulting in enhancing the dielectric properties of the Nb doped films. The 3%-Nb doped PZT thin films with 5% excess Pb showed a capacitance density of 24.04 fF/${\mu}{\textrm}{m}$2 a dielectric loss of 0.13 a switchable polarization of 15.84 $\mu$C/cm2 and a coercive field of 32.7 kV/cm respectively. The leakage current density of the film was as low as 1.47$\times$10-7 A/cm2 at the applied voltage of 1.5 V.

• Journal of Environmental Science International
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• v.25 no.1
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• pp.173-179
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• 2016

Leaf water and osmotic potential, chlorophyll content, photosynthetic rate, and electrolyte leakage were measured to evaluate tolerance to water stress in wild-type (WT) and transgenic tobacco plants (TR) expressing copper/zink superoxide dismutase (CuZnSOD) and ascorbate peroxidase (APX) in chloroplasts. Leaf water potential of both WT and TR plants decreased similarly under water stress condition. However, leaf osmotic potential of TR plants more negatively decreased in the process of dehydration, compared with WT plants, suggesting osmotic adjustment. Stomatal conductance (Gs) in WT plants markedly decreased from the Day 4 after withholding water, while that in TR plants retained relatively high values. Relatively low chlorophyll content and photosynthetic rate under water stress were shown in WT plants since $4^{th}$ day after treatment. In particular, damage indicated by electrolyte leakage during water stress was higher in WT plants than in TR plants. On the other hand, SOD and APX activity was remarkably higher in TR plants. These results indicate that transgenic tobacco plants expressing copper/zink superoxide dismutase (CuZnSOD) and ascorbate peroxidase (APX) in chloroplasts improve tolerance to water stress.

• Journal of computational fluids engineering
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• v.18 no.1
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• pp.7-12
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• 2013

This paper presents a numerical investigation of the influences of various non-uniform tip clearances on the performance and flow field in a centrifugal compressor. Numerical simulations were conducted for three centrifugal compressor impellers in which the tip clearance height varied linearly from the leading edge to the trailing edge. The numerical result was compared with the experimental data for validation. Although the performance improved for low tip clearances, a smaller tip clearance at the trailing edge reduced the overall tip leakage flow more effectively than a smaller tip clearance at the leading edge. Therefore, a smaller tip clearance at the trailing edge lowered the mixing loss caused by interactions between the tip leakage flow and the main passage flow.

• Explosives and Blasting
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• v.17 no.4
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• pp.32-50
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• 1999

This study deals with interface charactristics of tube and tubesheet of the nuclear steam generator by the explosive expansion in order to take advantage of optimum expansion ratio, pull-out strength and leakage tightness and improvement of the resisitance on the stress corrosion cracking for low residual stress. The paper also show the relationship between roll, hydraulic and explosive expansion. The results obtain are as follows (1) Because of the explosive bonding is to use the high speed pressure and energy by the explosive, workability is good, bonding region is homogenous (2) Expansion ratio is 2.7%, Pull-out strength 850kg, Leakage strength $500kg/cm^2$. Clearance gap is 10~30mm in case of explosive expansion and interface structure of the tube and tubesheet is optimum condition. (3) As the transition region of the explosive expansion is inactive, the resistance of the stress corrosion cracking is increases 30~40% compare to the roll and hydraulic expansion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1175-1180
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• 2003

Transformer Coupled Plasma Chemical Vapor Deposited (TCP-CVD) silicon nitride (SiNx) is widely used as a gate dielectric material for thin film transistors (TFT). This paper reports the SiNx films, grown by TCP-CVD at the low temperature (30$0^{\circ}C$). Experimental investigations were carried out for the optimization o(SiNx film as a function of $N_2$/SiH$_4$ flow ratio varying ,3 to 50 keeping rf power of 200 W, This paper presents the dielectric studies of SiNx gate in terms of deposition rate, hydrogen content, etch rate and leakage current density characteristics lot the thin film transistor applications. And also, this work investigated means to decrease the leakage current of SiNx film by employing $N_2$ plasma treatment. The insulator layers were prepared by two step process; the $N_2$ plasma treatment and then PECVD SiNx deposition with SiH$_4$, $N_2$gases.