• 한국재료학회지
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• 제18권12호
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• pp.640-644
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• 2008

ZnO/ZnS core/shell nanocrystals (${\sim}5-7\;nm$ in diameter) with a size close to the quantum confinement regime were successfully synthesized using polyol and thermolysis. X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) analyses reveal that they exist in a highly crystalline wurtzite structure. The ZnO/ZnS nanocrystals show significantly enhanced UV-light emission (${\sim}384\;nm$) due to effective surface passivation of the ZnO core, whereas the emission of green light (${\sim}550\;nm$) was almost negligible. They also showed slight photoluminescence (PL) red-shift, which is possibly due to further growth of the ZnO core and/or the extension of the electron wave function to the shell. The ZnO/ZnS core/shell nanocrystals demonstrate strong potential for use as low-cost UV-light emitting devices.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1531_1532
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• 2009

This paper presents a method of self-arranging solderballs by using surface energy difference. After evaporating Au which has high surface energy on Si substrates, Teflon passivation layer which has low surface energy was patterned by lift-off process. Droplets formed only on the hydrophilic Au solderball lands by the surface energy difference, not the hydrophobic Teflon surface. Scattered solderballs sticked by themselves to the wetted solderball lands on the tilted substrate. After setting preheating of $200^{\circ}C$ and soldering of $245^{\circ}C$ hot plates, the solderballs were soldered on the solderball lands and two substrates were soldered together completely. After measuring the mechanical shear strength of the soldered substrates with solderballs of $3{\times}3$, $4{\times}4$ and $5{\times}5$ arrays. the calculated shear strength per one solderball was 1.1~2.4kgf as high as the previous report.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.541-541
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• 2012

InP quantum dots capped by myristic acid (InP-MA QDs) were synthesized by a typical hot injection method using MA as stablizing agent. The current density across the InP-MA QDs thin film which was fabricated by spin-coating method is about $10^{-4}A/cm^2$ at the electric field of 0.1 MV/cm from I-V measurement on a metal-insulator-metal (MIM) device. The low conductivity of the InP-MA QDs thin film is interpreted as due to the long interdistances among the dots governed by the MA molecules. Therefore, replacing the MA with thioacetic acid (TAA) by biphasic ligand exchange was conducted in order to obtain TAA capped InP QDs (InP-TAA). InP-TAA QDs were designed due to: 1) the TAA is very short molecule; 2) the thiolate groups on the surface of the InP-TAA QDs are expected to undergo condensation reaction upon thermal annealing which connects the QDs within the QD thin film through a very short linker -S-; and 3) TAA provides better passivation to the QDs both in the solution and thin film states which minimizing the effect of surface trapping states.

• 한국표면공학회지
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• 제51권3호
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• pp.172-178
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• 2018

In this paper, effects of potassium permanganate, pottasium dichromate, sodium molybdate on lean duplex stainless steel were studied by GDOES, OCP, potentiodynamic curves. The stainless steels were chemically passivated in each nitric acid solutions containing 4wt.% oxidants for 1 hour. As a result, when potassium dichromate or sodium molybdate was added, content of Fe was decreased and content of Cr was increased. Consequently, corrosion resistance of passive film was increased. But in case of potassium permanganate was added, contrastively, content of Fe was increased and content of Cr was decreased. So corrosion resistance was decreased. Adding sodium molybdate in nitric acid for chemical surface treatment process was the most effective among oxidants and also it showed the most stable anti-corrosion in SST.

• Journal of Electrochemical Science and Technology
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• 제2권1호
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• pp.8-13
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• 2011

Interfacial compatibility between the Si-Cu electrode and diluted ionic liquid electrolyte containing 50 vol.% of 1M lithium bis(trifluoromethanesulfonyl)imide (LiTFSI)/1-methyl-1-propylpyrrolidinium bis(trifluoromethylsulfonyl)imide (MPP-TFSI) and 50 vol.% dimethyl carbonate (DMC) in a lithium cell and dilution effect on surface chemistry are examined. ex-situ ATR FTIR analysis results reveal that the surface of the Si-Cu electrode cycled in the diluted ionic liquid electrolyte is effectively passivated with the SEI layer mainly composed of carboxylate salts-containing polymeric compounds produced by the decomposition of DMC. Surface species by the decomposition of TFSI anion and MPP cation are found to be relatively in a very low concentration level. Passivation of electrode surface with the SEI species contributes to protect from further interfacial reactions and to preserve the electrode structure over 200 cycles, delivering discharge capacity of > 1670 $mAhg^{-1}$ and capacity retention of 88% of maximum discharge capacity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.227-230
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• 2004

As the organic acids were added in the slurry, zeta potential of alumina was changed to negative value and IEP value was shifted from alkaline to acidic pH. In citric acid based slurry, Cu surface continuously dissolved and etching depth linearly increased. On the contrary, passivation layer was grown on Cu surface in oxalic acid based slurry. As the platen rotation speed increased, Preston coefficient decreased in both slurries. With oxalic acid based slurry, at low velocity, removal rate is high value because of high friction force compared to citric acid based slurry. As platen velocity increased, removal of Cu in citric acid based slurry became higher value than oxalic acid based slurry. Typical lubrication behaviors were observed in both slurries. As Sommerfeld number increased, COF values gradually decreased and then re-increased. It indicated that lubrication was changed to direct contact or semi-direct contact mode to hydro-lubrication mode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.280-284
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• 2004

Multicrystalline silicon wafers were textured in an alkaline bath, basically using sodium hydroxide and in acidic bath, using mainly hydrofluoric acid (HF), nitric acid $(HNO_3)$ and de-ionized water (DIW). Some wafers were also acid polished for the comparative study. Comparison of average reflectance of the samples treated with the new recipe of acidic solution showed average diffuse reflectance less than even 5 percent in the optimized condition. Solar cells were thus fabricated with the samples following the main steps such as phosphorus doping for emitter layer formation, silicon nitride deposition for anti-reflection coating by plasma enhanced chemical vapor deposition (PECVD) and front surface passivation, screen printing metallization, co-firing in rapid thermal processing (RTP) Furnace and laser edge isolation and confirmed >14 % conversion efficiency from the best textured samples. This isotropic texturing approach can be instrumental to achieve high efficiency in mass production using relatively low cost silicon wafers as starting material.

• 한국전기전자재료학회논문지
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• 제26권1호
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• pp.73-79
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• 2013

Crystalline silicon solar cells with $SiN_x/SiN_x$ and $SiN_x/SiO_x$ double layer anti-reflection coatings(ARC) were studied in this paper. Optimizing passivation effect and optical properties of $SiN_x$ and $SiO_x$ layer deposited by PECVD was performed prior to double layer application. When the refractive index (n) of silicon nitride was varied in range of 1.9~2.3, silicon wafer deposited with silicon nitride layer of 80 nm thickness and n= 2.2 showed the effective lifetime of $1,370{\mu}m$. Silicon nitride with n= 1.9 had the smallest extinction coefficient among these conditions. Silicon oxide layer with 110 nm thickness and n= 1.46 showed the extinction coefficient spectrum near to zero in the 300~1,100 nm region, similar to silicon nitride with n= 1.9. Thus silicon nitride with n= 1.9 and silicon oxide with n= 1.46 would be proper as the upper ARC layer with low extinction coefficient, and silicon nitride with n=2.2 as the lower layer with good passivation effect. As a result, the double layer AR coated silicon wafer showed lower surface reflection and so more light absorption, compared with $SiN_x$ single layer. With the completed solar cell with $SiN_x/SiN_x$ of n= 2.2/1.9 and $SiN_x/SiO_x$ of n= 2.2/1.46, the electrical characteristics was improved as ${\Delta}V_{oc}$= 3.7 mV, ${\Delta}_{sc}=0.11mA/cm^2$ and ${\Delta}V_{oc}$=5.2 mV, ${\Delta}J_{sc}=0.23mA/cm^2$, respectively. It led to the efficiency improvement as 0.1% and 0.23%.

• 한국정밀공학회지
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• 제20권5호
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• pp.218-224
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• 2003

This paper describes a novel MEMS integration technique on a CMOS chip. MEMS integration on CMOS circuit has many advantages in view of manufacturing cost and reliability. The surface topography of a CMOS chip from a commercial foundry has 0.9 ${\mu}{\textrm}{m}$ bumps due to the conformal coating on aluminum interconnect patterns, which are used for addressing each MEMS element individually. Therefore, it is necessary to achieve a flat mirror-like CMOS chip fer the microelectromechanical system (MEMS) such as micro mirror array. Such CMOS chip needs an additional thickness of the dielectric passivation layer to ease the subsequent planarization process. To overcome a temperature limit from the aluminum thermal degradation, this study uses RF sputtering of silicon nitride at low temperature and then polishes the CMOS chip together with the surrounding dummy pieces to define a polishing plane. Planarization reduces 0.9 ${\mu}{\textrm}{m}$ of the bumps to less than 25 nm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.88-91
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• 2003

Tungsten is widely used as a plug for the multi-level interconnection structures. However, due to the poor adhesive properties of tungsten (W) on $SiO_2$ layer, the Ti/TiN barrier layer is usually deposited onto $SiO_2$ for increasing adhesion ability with W film. Generally, for the W-CMP (chemical mechanical polishing) process, the passivation layer on the tungsten surface during CMP plays an important role. In this paper, the effect of oxidants controlling the polishing selectivity of W/Ti/TiN layer were investigated. The alumina ($Al_2O_3$) abrasive containing slurry with $H_2O_2$ as the oxidizer, was studied. As our preliminary experimental results, very low removal rates were observed for the case of no-oxidant slurry. This low removal rate is only due to the mechanical abrasive force. However, for Ti and TiN with $H_2O_2$ oxidizer, different removal rate was observed. The removal mechanism of Ti during CMP is mainly due to mechanical abrasive, whereas for TiN, it is due to the formation of metastable soluble peroxide complex.