• Journal of Powder Materials
• /
• v.30 no.6
• /
• pp.516-520
• /
• 2023

Highly safe lithium-ion batteries (LIBs) are required for large-scale applications such as electrical vehicles and energy storage systems. A highly stable cathode is essential for the development of safe LIBs. LiFePO₄ is one of the most stable cathodes because of its stable structure and strong bonding between P and O. However, it has a lower energy density than lithium transition metal oxides. To investigate the high energy density of phosphate materials, vanadium phosphates were investigated. Vanadium enables multiple redox reactions as well as high redox potentials. LiVPO₄O has two redox reactions (V⁵⁺/V⁴⁺/V³⁺) but low electrochemical activity. In this study, LiVPO₄O is doped with fluorine to improve its electrochemical activity and increase its operational redox potential. With increasing fluorine content in LiVPO₄O_1-xF_x, the local vanadium structure changed as the vanadium oxidation state changed. In addition, the operating potential increased with increasing fluorine content. Thus, it was confirmed that fluorine doping leads to a strong inductive effect and high operating voltage, which helps improve the energy density of the cathode materials.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1996.06a
• /
• pp.422-448
• /
• 1996

Low-temperature epitaxial growth of Si and SiGe layers of Si is one of the important processes for the fabrication of the high-speed Si-based heterostructure devices such as heterojunction bipolar transistors. Low-temperature growth ensures the abrupt compositional and doping concentration profiles for future novel devices. Especially in SiGe epitaxy, low-temperature growth is a prerequisite for two-dimensional growth mode for the growth of thin, uniform layers. UHV-ECRCVD is a new growth technique for Si and SiGe epilayers and it is possible to grow epilayers at even lower temperatures than conventional CVD's. SiH and GeH and dopant gases are dissociated by an ECR plasma in an ultrahigh vacuum growth chamber. In situ hydrogen plasma cleaning of the Si native oxide before the epitaxial growth is successfully developed in UHV-ECRCVD. Structural quality of the epilayers are examined by reflection high energy electron diffraction, transmission electron microscopy, Nomarski microscope and atomic force microscope. Device-quality Si and SiGe epilayers are successfully grown at temperatures lower than 600℃ after proper optimization of process parameters such as temperature, total pressure, partial pressures of input gases, plasma power, and substrate dc bias. Dopant incorporation and activation for B in Si and SiGe are studied by secondary ion mass spectrometry and spreading resistance profilometry. Silicon p-n homojunction diodes are fabricated from in situ doped Si layers. I-V characteristics of the diodes shows that the ideality factor is 1.2, implying that the low-temperature silicon epilayers grown by UHV-ECRCVD is truly of device-quality.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.5
• /
• pp.673-681
• /
• 2014

In this paper, a novel low specific on-resistance SOI LDMOS Device with P+P-top layer in the drift region is proposed and investigated using a two dimensional device simulator, MEDICI. The structure is characterized by a heavily-doped $P^+$ region which is connected to the P-top layer in the drift region. The $P^+$ region can modulates the surface electric field profile, increases the drift doping concentration and reduces the sensitivity of the breakdown voltage on the geometry parameters. Compared to the conventional D-RESURF device, a 25.8% decrease in specific on-resistance and a 48.2% increase in figure of merit can be obtained in the novel device. Furthermore, the novel $P^+P$-top device also present cost efficiency due to the fact that the $P^+$ region can be fabricated together with the P-type body contact region without any additional mask.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.115-115
• /
• 2009

Current sensing in power semiconductors involves sensing of over-current in order to protect the device from harsh conditions. This technique is one of the most important functions in stabilizing power semiconductor device modules. The Power MOSFET is very efficient method with low power consumption, fast sensing speed and accuracy. In this paper, we have analyzed the characteristics of proposed sense FET and optimized its electrical characteristics to apply conventional 40 V power MOSFET by numerical and simulation analysis. The proposed sense FET has the n-drift doping concentration $1.5\times10^{14}\;cm^{-3}$, size of $600\;{\mu}m^2$ with $4.5\;{\Omega}$, and off-state leakage current below $50\;{\mu}A$. We offer the layout of the proposed Power MOSFET to process actually. The offerd design and optimization methods are meaningful, which the methods can be applied to the power devices having various breakdown voltages for protection.

• Journal of the Korean Ceramic Society
• /
• v.54 no.4
• /
• pp.272-277
• /
• 2017

Organic-inorganic hybrid thermoelectric materials have obtained increasing attention because it opens the possibility of enhancing thermoelectric performance by utilizing the low thermal conductivity of organic thermoelectric materials and the high Seebeck coefficient of inorganic thermoelectric materials. Moreover, the organic-inorganic hybrid thermoelectric materials possess numerous advantages, including functional aspects such as flexibility or transparency, low cost raw materials, and simplified fabrication processes, thus, allowing for a wide range of potential applications. In this study, the types and synthesis methods of organic-inorganic thermoelectric hybrid materials were discussed along with the methods used to enhance their thermoelectric properties. As a key factor to maximize the thermoelectric performances of hybrid thermoelectric materials, the nanoengineering to control the nanostructure of the inorganic materials as well as the modification of the organic material structure and doping level are considered, respectively. Meanwhile, the interface between the inorganic and organic phase is also important to develop the hybrid thermoelectric module with excellent reliability and high thermoelectric efficiency in addition to its performance in various electronic devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.33-34
• /
• 2005

In this study, in odor to develop low temperature sintering multilayer piezoelectric actuator and ultrasonic vibrator, PMN-PNN-PZT ceramics were fabricated using $Li_2CO_3$ and $Na_2CO_3$ as sintering aids and their piezoelectric and dielectric characteristics were investigated according to the addition of dopant CuO and $Fe_2O_3$, respectively. The CuO added PMN-PNN-PZT ceramics improved mechanical quality factor Qm due to the acceptor doping effect. And also, $Fe_2O_3$ reacted as softner in this composition system in addition to the increase of grain size and sinterability. Taking into consideration electromechanical coupling factor kp of 0.62, dielectric constant $\varepsilon_r$, of 1275, Piezoelectric $d_{33}$ constant of 377[pC/N] and mechanical quality factor Qm of 975, it was concluded that the ceramics with the $Fe_2O_3$, added composition sintered at 900[$^{\circ}C$] were best for the multilayer piezoelectric actuator and ultrasonic vibrator application.

• Journal of Biomedical Engineering Research
• /
• v.22 no.2
• /
• pp.145-150
• /
• 2001

대뇌 피질에 삽입하여 깊이에 따라 신경 신호를 기록하기 위한 탐침형 반도체 미세전극 어레이(depth-type silicon microelectrode array, 일명 SNU probe)를 제작하였다. 붕소를 확산시켜 생성된 고농도 p-type doping된 p＋ 영역을 습식식각 정지점으로 사용하는 기존의 방법과 달리 실리콘 웨이퍼의 앞면을 건식식각하여 원하는 탐침 두께만큼의 깊이로 트렌치(trench)를 형성한 후 뒷면을 습식식각하는 방법으로 탐침 형태의 미세 구조를 만들었다. 제작된 반도체 미세전극 어레이의 탐침 두께는 30 $\mu\textrm{m}$이며 실리콘 건식식각을 위한 마스크로 6 $\mu\textrm{m}$ 두께의 LTO(low temperature oxide)를 사용하였다. 탐침의 두께는 개발된 본 공정을 이용해서 5~90 $\mu\textrm{m}$ 범위까지 쉽게 조절할 수 있었다. 탐침의 두께를 보다 쉽게 조절할 수 있게 됨에 따라 여러 신경조직에 필요한 다양한 구조의 반도체 미세전극 어레이를 개발할 수 있게 되었다. 본 공정을 이용해서 개발된 4채널 SUN probe를 사용하여 흰쥐의 제1차 체감각 피질에서 4채널 신경 신호를 동시에 기록하였으며, 전기적 특성검사에서 기존의 탐침형 반도체 미세전극, 텅스텐 전극과 대등하거나 우수한 신호대 잡음비(signal to noise ratio, SNR)특성을 가짐을 확인하였다.

• Journal of Surface Science and Engineering
• /
• v.49 no.6
• /
• pp.521-529
• /
• 2016

In this study, titanium nanotubes, prepared by anodization method, showing high surface and strong chemical stability in acidic and basic media, have been employed for the application to the electrodes for water splitting in KOH solution. Due to its high polarization resistance of $TiO_2$ itself, proper catalysts are essentially required to reduce overpotentials for water oxidation and reduction. Most of academic literature showed noble metal catalysts for foreign dopants in $TiO_2$ electrodes. From commercialization point of view, screening of low-cost catalyst is important. Herein, we propose molybdenum oxide as low-cost catalysts among various catalysts tested in the experiments, which exhibits the highest performance for hydrogen evolution reaction in highly alkaline solution. We showed that molybdenum oxide doped electrode can be operated in extreme acidic and basic conditions as well.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.7
• /
• pp.738-746
• /
• 2004

Recently zinc oxide(ZnO) has emerged as one of the most promising transparent conducting films with a strong demand of low cost and high performance optoelectronic devices, ZnO film has many advantages such as high chemical and mechanical stabilities, and abundance in nature. In this paper, in order to obtain the excellent transparent conducting film with low resistivity and high optical transmittance for Plasma Display Pannel(PDP), aluminium doped zinc oxide films were deposited on Corning glass substrate by dc magnetron sputtering method. The effects of the discharge power and doping amounts of $Al_2$$O_3$ on the electrical and optical properties were investigated experimentally. Particularly in order to lower the electrical resistivity, positive and negative bias voltages were applied on the substrate, and the effect of bias voltage on the electrical properties of ZnO:Al thin film were also studied and discussed. Films with lowest resistivity of $4.3 \times 10 ^{-4} \Omega-cm$ and good transmittance of 91.46 % have been achieved for the films deposited at 1 mtorr, $400^{\circ}C$, 40 W, Al content of 2 wt% with a substrate bias of +30 V for about 800 nm in film thickness.

• Advances in environmental research
• /
• v.5 no.1
• /
• pp.61-77
• /
• 2016

$NanoTiO_2$ was synthesized by ultrasonication assisted sol-gel process and subjected to iron doping and carbon-iron codoping. The synthesized catalysts were characterized by XRD, HR-SEM, EDX, UV-Vis absorption spectroscopy and BET specific surface area analysis. The average crystallite size of pure $TiO_2$ was in the range of 30 - 33 nm, and that of Fe-$TiO_2$ and C-Fe $TiO_2$ was in the range of 7 - 13 nm respectively. The specific surface area of the iron doped and carbon-iron codoped nanoparticles was around $105m^2/g$ and $91m^2/g$ respectively. The coupled semiconductor photo-Fenton's activity of the synthesized catalysts was evaluated by the degradation of a cationic dye (C.I. Basic blue 9) and an anionic dye (C.I. Acid orange 52) with concurrent investigation on the operating variables such as pH, catalyst dosage, oxidant concentration and initial pollutant concentration. The most efficient C-Fe codoped catalyst was found to effectively destruct synthetic dyes and potentially treat real textile effluent achieving 93.4% of COD removal under minimal solar intensity (35-40 kiloLUX). This reveals the practical applicability of the process for the treatment of real wastewater in both high and low insolation regimes.