• The Journal of the Korea Contents Association
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• v.8 no.11
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• pp.18-24
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• 2008

An organic light-emitting diode(OLED) has advantages of low power driving, self light-emitting, wide viewing angle, excellent high resolution, full color, high reproduction, fast response speed, simple manufacturing process, or the like. However, there are still a number of challenges to get over in order to put it to practical use as a high performance display. First of all, the most important thing is to improve the efficiency of the OLED element in order to commercialize it. To this end, its efficiency can be improved by lowering the driving voltage through the improvement of structure of the OLED element and the application of new organic substance. Therefore, in this study, we have manufactured a red OLED element by applying fluorescent dyes to the emitting layer of the element having the structure of ITO/TPD/ Znq2+DCJTB /Znq2/Al and the structure of ITO/CuPc/NPB/ Alq3+DCJTB/Alq3/Al, in order to light-emitting various colors or improve the brightness and the efficiency, and then we have evaluated its electrical and optical characteristics.

• Korean Journal of Materials Research
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• v.30 no.9
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• pp.458-464
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• 2020

Zinc-ion hybrid supercapacitors (ZICs) have recently been spotlighted as energy storage devices due to their high energy and high power densities. However, despite these merits, ZICs face many challenges related to their cathode materials, activated carbon (AC). AC as a cathode material has restrictive electrical conductivity, which leads to low capacity and lifetime at high current densities. To overcome this demerit, a novel boron (B) doped AC is suggested herein with improved electrical conductivity thanks to B-doping effect. Especially, in order to optimize B-doped AC, amounts of precursors are regulated. The optimized B-doped AC electrode shows a good charge-transfer process and superior electrochemical performance, including high specific capacity of 157.4 mAh g^-1 at current density of 0.5 A g^-1, high-rate performance with 66.6 mAh g^-1 at a current density of 10 A g^-1, and remarkable, ultrafast cycling stability (90.7 % after 10,000 cycles at a current density of 5 A g^-1). The superior energy storage performance is attributed to the B-doping effect, which leads to an excellent charge-transfer process of the AC cathode. Thus, our strategy can provide a rational design for ultrafast cycling stability of next-generation supercapacitors in the near future.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.441-448
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• 2002

The electrical properties of the GaN-based green light emitting diodes(LEDs) with the Mg-doped p-GaN layer activated in $N_2$ or $O_2$ ambient have been compared. For the $N_2$ -ambient activation the current-voltage behavior of LEDs has been found to be improved when the Mg dopants activation was performed in the higher temperature. However, for the $O_2$-ambient activation the current-voltage characteristic has been observed to be enhanced when the Mg dopants activation was carried out in the lower temperature. The minimum forward voltage at 20mA was obtained to be 4.8 V for LEDs with the p-GaN layer activated at $900^{\circ}C$ in the $N_2$ ambient and 4.5V for LEDs with the p-GaN layer treated at $700^{\circ}C$ in the $O_2$ambient, repectively. The forward voltage reduction of the LEDs treated in the $O_2$-ambient may be related to the oxygen co-doping of the p-GaN layer during the activation process. The $O_2$ -ambient activation process is useful for the enhancement of the LED performance as well as the fabrication process since this process can activate the Mg dopants in the low temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.814-820
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• 2009

Antimony (Sb) doped ZnO thin films (0.1 at.%) were deposited on sapphire (0001) substrates at various temperatures (200 - 600$^{\circ}C$) by using pulsed laser deposition technique. All the thin films have been characterized by X-ray diffractometer, atomic force microscopy and spectrophotometer to investigate their structural, morphological and optical properties, respectively. Hall measurements were also carried out to identify the electrical properties of the thin films. These thin films were constituted in wurtzite structure with the preferential orientation of (002) diffraction plane and had as high as 80% optical transmission in the visible range. The bandgap energy also was determined by spectrophotometer which was around 3.28 eV. Hall measurements results revealed that the Sb dope ZnO thin film (0.1 at.%) grown at $500^{\circ}C$ exhibited p-type conduction with a carrier concentration of $8.633\times10^{16}\;cm^{-3}$, a mobility of $1.41\;cm^2/V{\cdot}s$ and a resistivity of $51.8\;\Omega{\cdot}cm$. We have successfully achieved p-type conduction in antimony doped ZnO thin films with low doping level even though the electrical properties are not favorable. This paper suggests the feasibility of p-type doping with large-size-mismatched dopant by using pulsed laser deposition.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.180-180
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• 2000

Plasma source ion implantation is a new doping technique for the formation of shallow junction with the merits of high dose rate, low-cost and minimal wafer charging damage. In plasma source ion implantation process, the wafer is placed directly in the plasma of the appropriate dopant ions. Negative pulse bias is applied to the wafer, causing the dopant ions to be accelerated toward the wafer and implanted below the surface. In this work, inductively couples plasma was generated by anodized Al antenna that was located inside the vacuum chamber. The outside wall of Al chamber was surrounded by Nd-Fe-B permanent magnets to confine the plasma and to enhance the uniformity. Before implantation, the wafer was pre-sputtered using DC bias of 300B in Ar plasma in order to eliminate the native oxide. After cleaning, B2H6 (5%)/H2 plasma and negative pulse bias of -1kV to 5 kV were used to form shallow p+/n junction at the boron dose of 1$\times$1015 to 5$\times$1016 #/cm2. The as-implanted samples were annealed at 90$0^{\circ}C$, 95$0^{\circ}C$ and 100$0^{\circ}C$during various annealing time with rapid thermal process. After annealing, the sheet resistance and the junction depth were measured with four point probe and secondary ion mass spectroscopy, respectively. The doping uniformity was also investigated. In addition, the electrical characteristics were measured for Schottky diode with a current-voltage meter.

• Korean Journal of Materials Research
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• v.28 no.11
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• pp.640-645
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• 2018

The design of non-precious electrocatalysts with low-cost, good stability, and an improved oxygen reduction reaction(ORR) to replace the platinium-based electrocatalyst is significant for application of fuel cells and metal-air batteries with high energy density. In this study, we synthesize iron-carbide($Fe_3C$) embedded nitrogen(N) doped carbon nanofiber(CNF) as electrocatalysts for ORRs using electrospinning, precursor deposition, and carbonization. To optimize electrochemical performance, we study the three stages according to different amounts of iron precursor. Among them, $Fe_3C$-embedded N doped CNF-1 exhibits the most improved electrochemical performance with a high onset potential of -0.18 V, a high $E_{1/2}$ of -0.29 V, and a nearly four-electron pathway (n = 3.77). In addition, $Fe_3C$-embedded N doped CNF-1 displays exellent long-term stabillity with the lowest ${\Delta}E_{1/2}=8mV$ compared to the other electrocatalysts. The improved electrochemical properties are attributed to synergestic effect of N-doping and well-dispersed iron carbide embedded in CNF. Consequently, $Fe_3C$-embedded N doped CNF is a promising candidate for non-precious electrocatalysts for high-performance ORRs.

• Bulletin of the Korean Chemical Society
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• v.13 no.3
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• pp.248-252
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• 1992

$ZrO_2-dopedYb_2O_3solid$ solutions containing 1, 3, 5, 7 and 9 mol% $ZrO_2were$ synthesized from spectroscopically pure $Yb_2O_3$ and $ZrO_2$ powders and found to be rare earth C-type structure by XRD technique. Electrical conductivities were measured as a function of temperatures from 700 to $1050^{\circ}C$ and oxygen partial pressures from 1${\times}$$10^-5$ to 2${\times}$ $10^-1$atm. The electrical conductivities depend simply on temperature and the activation energies are determined to be 1.56-1.68 $_eV$. The oxygen partial pressure dependence of the electrical conductivity shows that the conductivity increases with increasing oxygen partial pressure, indicating p-type semiconductor. The $PO_2$ dependence of the system is nearly power of 1/4. It is suggested from the linearity of the temperature dependence of electrical conductivity and only one value of 1/n that the solid solutions of the system have single conduction mechanism. From these results, it is concluded that the main defects of the system are negatively doubly charged oxygen interstitial in low. $ZrO_2doping$ level and negatively triply charged cation vacancy in high doping level and the electrical conduction is due to the electronic hole formed by the defect structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.5
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• pp.513-519
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• 2023

It was reported that a tetragonal phase can be stabilized with maintaining good piezoelectric properties when Na_0.5K_0.5NbO₃ (KNN) is modified with 0.06 mol SrTiO₃. However, such a high amount of SrTiO₃ leads not only to poor sinterability but low Curie temperature (T_C). To maintain high TC with good piezoelectric properties in KNN-based lead-free piezoelectric ceramics, this study investigates the effect of Li-doping on the dielectric and piezoelectric properties of 0.96Na_0.5K_0.5NbO₃-0.04SrTiO₃ (KNN-4ST) ceramics. As a result, the orthorhombic-tetragonal phase transition was observed at 2 mol% Li₂CO₃ modified KNN-4ST ceramics, whose T_C, d₃₃ and k_p values are 328℃, 165pC/N and 0.33, respectively.

• Nuclear Engineering and Technology
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• v.55 no.5
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• pp.1763-1774
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• 2023

In this study, a series of flexible neutron/gamma shielding composites are fabricated through the doping of Gd₂O₃ into the matrix of SEBS with (M_Gd2O3: M_SEBS) % from 5% to 100%. Neutron transmittance test shows an exponential attenuation with the increase of areal density of Gd, in which the transmittance T ranges from 59.1440% to 35.3026%, with standard deviation less than 2.2743%, mass attenuation coefficient 𝜇_m from 0.3194 cm²/g to 0.4999 cm²/g, and half value layer-HVL value from 2.4530 mm to 1.1313 mm. Shielding efficiency of the Gd₂O₃/SEBS composites is basically improved in comparison with that of B₄C/SEBS. The transmittance T, mass/linear attenuation coefficient 𝜇_m and 𝜇, HVL and effective atomic number Z_eff for the shielding of γ rays (39 keV, 59 keV and 122 keV) are measured and calculated with XCOM as well as MCX programs. Finally, plots of the three dimensional relationships between transmittance, doping amount and thickness are provided to the guidance for engineering shielding design. In summary, the Gd₂O₃/SEBS composite is proved to be an effective flexible neutron/low energy γ rays shielding material, which could be of potential applications in the field of nuclear technology and nuclear engineering.

• Journal of Powder Materials
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• v.30 no.6
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• pp.516-520
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• 2023

Highly safe lithium-ion batteries (LIBs) are required for large-scale applications such as electrical vehicles and energy storage systems. A highly stable cathode is essential for the development of safe LIBs. LiFePO₄ is one of the most stable cathodes because of its stable structure and strong bonding between P and O. However, it has a lower energy density than lithium transition metal oxides. To investigate the high energy density of phosphate materials, vanadium phosphates were investigated. Vanadium enables multiple redox reactions as well as high redox potentials. LiVPO₄O has two redox reactions (V⁵⁺/V⁴⁺/V³⁺) but low electrochemical activity. In this study, LiVPO₄O is doped with fluorine to improve its electrochemical activity and increase its operational redox potential. With increasing fluorine content in LiVPO₄O_1-xF_x, the local vanadium structure changed as the vanadium oxidation state changed. In addition, the operating potential increased with increasing fluorine content. Thus, it was confirmed that fluorine doping leads to a strong inductive effect and high operating voltage, which helps improve the energy density of the cathode materials.