• Restorative Dentistry and Endodontics
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• v.27 no.4
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• pp.403-410
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• 2002

Several ways of curing are being tried to improve material's properties and reduce marginal gap. However, all are considering about the pattern of light intensity. It was noted from the preliminary study the change of light wavelength from filter changing may give an impact on material's property and microleakage. The object of this study was to verify the effect of filters with various wavelength width on the microhardness and microleakage of composite resin ; hybrid type of DenFil and submicron hybrid type of Esthet X. Composite resins were cured using 3 kinds of filter; narrow-banded(465-475 nm), mid-banded(430-470 nm), wide-banded(400-500 nm). After the estimation of microhardness. degree of dye penetration and the maximum gap from SEM evaluation were done between 4 groups that showed no difference in microhardness value of the lower surface . The results were as follows : 1 Adequate microhardness could not be gained with a narrow-banded filter irrespective of curing time. At the upper surface, DenFil should be polymerized with middle or wide-banded filter for 20 seconds at least, while Esthet X be col$.$ed with middle or wide-banded filter for 30 seconds at least to get simitar hardness value to control group. 2. There was little dye penetration in enamel margin, but all dentin margins skewed much more dye penetration irrespective of curing conditions. Although there was no statistical difference, groups cured with mid-banded filter for 40 seconds and with wide-width filter for 20 seconds showed relatively less dye penetration. 3. It was revealed from the SEM examination that group cured with wide-banded filter had the smallest gap without statistical significance. Spearman's rho test showed that the correlation between the results of dye penetration and SEM examination was very low. From these results, it could be concluded that curing with wide-width filter would be better than the other techniques, even though the curing technique using mid-width filter seems to have its own unique advantage.

• Journal of Broadcast Engineering
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• v.18 no.4
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• pp.572-588
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• 2013

In this paper, 4K-UHDTV or 8K-UHDTV and UHD-3DTV that the next generation broadcasting implementation and the possibility of direct receiving environment construction is analyzed on the terrestrial broadcasting. Particularly, we investigated the possibility by analyzing the previous and related works with regard to UHDTV transmission by DVB-T2 that is one of the best commercialized transmission mode. In order that the UHDTV broadcasting succeeds once again after completion of digital terrestrial switch over at the end of 2012, the ultra high resolution image transfer is important. However, the direct, the indoor and ubiquitous receiving environment is important in not only TV but also the personal type multimedia terminal in the sense of UHDTV service penetration. Therefore, in this paper, by using SFN and high error-correcting mode in DVB-T2 standard, the efficient frequency utilization and effective reception environment construction is illustrated. Particularly, SFN network constitution by 2 mutually different frequencies including the VHF bandwidth and UHF band, and etc. is shown. And the method that builds the free wireless receive environment by using SFN low power radio repeater and for home use gap filler is proposed. And the effect and frequency amount required are presented, when UHDTV broadcasting use 10MHz bandwidth.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.62-62
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• 1999

Carbon based materials have many attractive properties such as a wide band gap, a low electron affinity, and a high chemical and mechanical stability. Therefore, researches on the carbon-based materials as field emitters have been drawn extensively to enhance the field emission properties. Especially, diamond gives high current density, high current stability high thermal conductivity durable for high temperature operation, and low field emission behaviors, Among these properties understanding the origin of low field emission is a key factor for the application of diamond to a filed emitter and the verification of the emission site and its distribution of diamond is helpful to clarify the origin of low field emission from diamond There have been many investigations on the origin of low field emission behavior of diamond crystal or chemical vapor deposition (CVD) diamond films that is intentionally doped or not. However, the origin of the low field emission behavior and the consequent field emission mechanism is still not converged and those may be different between diamond crystal and CVD diamond films as well as the diamond that is doped or not. In addition, there have been no systematic studies on the dependence of nondiamond carbon on the spatial distribution of emission sites and its uniformity. Thus, clarifying a possible mechanism for the low field emission covering the diamond with various properties might be indeed a difficult work. On the other hand, it is believed that electron emission mechanisms of diamond are closely related to the emission sites and its distributions. In this context, it will be helpful to compare the spatial distribution of emission sites and field emission properties of the diamond films prepared by systematic variations of structural property. In this study, we have focused on an understanding of the field emission variations of structural property. In this study, we have focused on an understanding of the field emission mechanism for the CVD grown undoped polycrystalline diamond films with significantly different structural properties. The structural properties of the films were systematically modified by varying the CH4/H2 ratio and/or applying positive substrate bias examined. It was confirmed from the present study that the field emission characteristics are strongly dependent on the nondiamond carbon contents of the undoped polycrystalline diamond films, and a possible field emission mechanism for the undoped polycrystalline diamond films is suggested.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.26-31
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• 2000

The ~1540 nm $^4$ $I_{13}$ 2/ longrightarro $w^4$ $I_{15}$ 2/ emissions of E $r^{3+}$ in Er-implanted GaN annealed at temperatures in the 400 to 100$0^{\circ}C$ range were investigated to gain a better understanding of the formation and dissociation processes of the various E $r^{3+}$ sites and the recovery of damage caused by the implantation with increasing annealing temperature ( $T_{A}$).The monotonic increase in the intensity of the broad defect photoluminescence(PL) bands with incresing $T_{A}$ proves that these are stable radiative recombination centers introduced by the implantation and annealing process. Theser centers cannot be attributed to implantation-induced damage that is removed by post-implantation annealing. Selective wavelength pumpling of PL spectra at 6K reveals the existence of at least nine different E $r^{3+}$ sites in this Er-implanted semiconductor. Most pf these E $r^{3+}$ PL centers are attributed to complexed of Er atoms with defects and impurities which are thermally activated at different $T_{A}$. Only one of the nine observed E $r^{3+}$ PL centers can be pumped by direct 4f absorption and this indicates that it is highest concentration E $r^{3+}$ center and it represents most of the optically active E $r^{3+}$ in the implanted sample. The fact that this E $r^{3+}$ center cannot be strongly pumped by above-gap light or broad band below-gap absorption indicates that it is an isolated center, i.e not complexed with defects or impurities, The 4f-pumped P: spectrum appears at annealing temperatures as low as 40$0^{\circ}C$, and although its intensity increase monotonically with increasing $T_{A}$ the wavelengths and linewidths of its characteristic peaks asre unaltered. The observation of this high quality E $r_{3+}$PL spectrum at low annealing temperatures illustrates that the crystalline structure of GaN is not rendered amorphous by the ion implantation. The increase of the PL intensities of the various E $R_{3+}$sites with increasing $T_{A}$is due to the removal of competing nonradiative channels with annealing. with annealing.annealing.

• Applied Chemistry for Engineering
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• v.25 no.5
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• pp.487-496
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• 2014

In this study, three kinds of polymers based on phenothiazine-benzothiadiazole were synthesized by a Suzuki coupling reaction, and the various side-chains were substituted at the nitrogen of phenothiazine. The optical and electrochemical properties of synthesized polymers were analyzed. The results indicate that their absorption ranged from 300 to 700 nm, and also confirmed the ideal highest occupied molecular orbital (HOMO) energy level was about -5.4 eV with low band-gap energy. Photovoltaic devices were fabricated using a photoactive layer composed of a blended solution of the polymer and $PC_{71}BM$ in ortho-dichlorobenzene The device with P2HDPZ-bTP-OBT containing the branched side-chain and long chain showed the best performance; the maximum power conversion efficiency of this device was 2.4% (with $V_{OC}$ : 0.74 V, $J_{SC}$ : $6.9mA/cm^2$, FF : 48.0%).

• Applied Chemistry for Engineering
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• v.21 no.1
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• pp.58-62
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• 2010

CNT-$TiO_{2}$ nano complexes were prepared from $TiOSO_4$ and multi-walled carbon nanotube (MWCNT) by hydrolysis. The CNTs were dispersed uniformly with anatase $TiO_{2}$ in the prepared $TiO_{2}$-CNT complexes. The increasing MWCNT ratio leads to increased crystalline carbon and O/Ti ratio. The decomposition degree of methylene blue was experienced according to UV radiation time for study adsorption and photocatalytic activity. The samples having high MWCNT ratio show high adsorption and photodegradation. The high specific surface area, functional group having oxygen, low band gap energy, high electric conductivity, high volume to surface ratio, uniform structure and properties of MWCNT assist photocatalytic activity of CNT-$TiO_{2}$ complex.

• Bulletin of the Korean Chemical Society
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• v.35 no.5
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• pp.1485-1490
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• 2014

We have designed and developed a new ladder type tetrafused ${\pi}$-conjugated building block such as dihydroindolo[3,2-b]indole (DINI) and investigated its role as an electron rich unit. The photovoltaic properties of a new semiconducting ${\pi}$-conjugated polymer, poly[[5,10-bisoctyl-5,10-dihydroindolo[3,2-b]indole-[5,6- bis(octyloxy)-4,7-di(thiophen-2-yl)benzo[c][1,2,5]thiadiazole]], represented by PDINI-OBTC8 are described. The new polymer PDINI-OBTC8 was synthesized in donor-acceptor (D-A) fashion, where fused ${\pi}$-conjugated tetracyclic DINI, and 5,6-bis(octyloxy)-4,7-di(thiophen-2-yl) benzo[c][1,2,5]thiadiazole (OBTC8) were employed as electron rich (donor) and electron deficient (acceptor) moieties, respectively. The conventional bulk heterojunction (BHJ) device structure ITO/PEDOT:PSS/PDINI-OBTC8:PCB71M/LiF/Al was utilized to fabricate polymer solar cells (PSCs), which comprises the blend of PDINI-OBTC8 and [6,6]-phenyl-$C_{71}$-butyric acid methyl ester ($PC_{71}BM$) in BHJ network. A BHJ PSC that contain PDINI-OBTC8 delivered power conversion efficiency (PCE) value of 1.68% with 1 vol% of 1,8-diidooctane (DIO) under the illumination of A.M 1.5G 100 $mW/cm^2$.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.777-780
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• 2005

모바일 오디오 적용을 위한 저전력 ${\Sigma}{\Delta}$ Modulator 에 대한 설계와 layout 을 보였다. 전체 구조는 3 차 단일 피드백 루프이며, 해상도는 16bit 을 갖는다. 샘플링 주파수에 따른 Over-sampling Ratio 는 128(46kHz) 또는 64(96kHz) 가 되도록 하였다. 차동 구조를 사용한 3 차 ${\Sigma}{\Delta}$ modulator 내의 적분기에 사용된 Op-Amp 는 DC-Gain 을 높이기 위해서 Gain-boosting 기법이 적용되었다. ${\Sigma}{\Delta}$ modulator 의 기준 전압은 전류 모드 Band-Gap Reference 회로에서 공급이 되며, PVT(Process, Voltage, Temperature) 변화에 따른 기준 전압의 편차를 보정하기 위하여, binary 3bit 으로 선택하도록 하였다. DAC 에서 사용되는 단위 커패시터의 mismatch 에 의한 성능 감소를 막기 위해, DAC 신호의 경로를 임의적으로 바꿔주는 scrambler 회로를 이용하였다. 4bit Quantizer 내부의 비교기 회로는 고해상도를 갖도록 설계하였고, 16bit thermometer code 에서 4bit binary code 변환시 발생하는 에러를 줄이기 위해 thermometer-to-gray, gray-to-binary 인코딩 방법을 적용하였다. 0.18um CMOS standard logic 공정 내 thick oxide transistor(3.3V supply) 공정을 이용하였다. 입력 전압 범위는 2.2Vp-p,diff. 이며, Typical process, 3.3V supply, 50' C 시뮬레이션 조건에서 2Vpp,diff. 20kHz sine wave 를 입력으로 할 때 SNR 110dB, THD 는 -95dB 이상의 성능을 보였고, 전류 소모는 6.67mA 이다. 또한 전체 layout 크기는 가로 1100um, 세로 840um 이다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.179-184
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• 2016

In recent years, the on-resistance, power loss and cell density of Si power devices have not exhibited significant improvements, and performance is approaching the material limits. GaN is considered an attractive material for future high-power applications because of the wide band-gap, large breakdown field, high electron mobility, high switching speed and low on-resistance. Here we report on the Ohmic contact resistance and reverse-bias characteristics of AlGaN/GaN Schottky barrier diodes with and without annealing. Annealing in oxygen at $500^{\circ}C$ resulted in an increase in the breakdown voltage from 641 to 1,172 V for devices with an anode-cathode separation of $20{\mu}m$. However, these annealing conditions also resulted in an increase in the contact resistance of $0.183{\Omega}-mm$, which is attributed to oxidation of the metal contacts. Auger electron spectroscopy revealed diffusion of oxygen and Au into the AlGaN and GaN layers following annealing. The improved reverse-bias characteristics following annealing in oxygen are attributed to passivation of dangling bonds and plasma damage due to interactions between oxygen and GaN/AlGaN. Thermal annealing is therefore useful during the fabrication of high-voltage GaN devices, but the effects on the Ohmic contact resistance should be considered.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.306.1-306.1
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• 2016

ZnO semiconductor material has been widely utilized in various applications in semiconductor device technology owing to its unique electrical and optical features. It is a promising as solar cell material, because of its low cost, n-type conductivity and wide direct band gap. In this work ZnO/Si heterojunctions were fabricated by using pulsed laser deposition. Vacuum chamber was evacuated to a base pressure of approximately $2{\times}10^{-6}Torr$. ZnO thin films were grown on p-Si (100) substrate at oxygen partial pressure from 5mTorr to 40mTorr. Growth temperature of ZnO thin films was set to 773K. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnO target, whose density of laser energy was $10J/cm^2$. Thickness of all the thin films of ZnO was about 300nm. The optical property was characterized by photoluminescence and crystallinity of ZnO was analyzed by X-ray diffraction. For fabrication ZnO/Si heterojunction diodes, indium metal and Al grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. Finally, current-voltage characteristics of the ZnO/Si structure were studied by using Keithly 2600. Under Air Mass 1.5 Global solar simulator with an irradiation intensity of $100mW/cm^2$, the electrical properties of ZnO/Si heterojunction photovoltaic devices were analyzed.