• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.605-608
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• 2006

The recent application of wide band gap oxide semiconductors to transparent thin film transistors (TTFTs) is making a fast and growing (r)evolution on the contemporary solid-state electronics. In this paper we present some of the recent results we have obtained using wide band gap oxide semiconductors, like indium zinc oxide, produced by rf sputtering at room temperature. The devices work in the enhancement mode and exhibit excellent saturation drain currents. On-off ratios above $10^6$ are achieved. The optical transmittance data in the visible range reveals average transmittance higher than 80 %, including the glass substrate. Channel mobilities are also quite respectable, with some devices presenting values around $25\;cm^2/Vs$, even without any annealing or other post deposition improvement processes. The high performances presented by these TTFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a low threshold voltage, opens new doors for applications in flexible, wearable, disposable portable electronics as well as battery-powered applications.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.977-979
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• 2006

Organic light-emitting diodes (OLEDs) based on the double wide band gap emissive layers in the range of 380 nm to 440 nm are reported. An efficient electroluminescence with a maximum at 400nm was observed at room temperature under a forward bias about 10V. With the wide band gap organic materials for near-ultraviolet emission, the low operating voltage (5V) and high current efficiency (3 cd/A) have been obtained at $2mA/cm^2$

• EDISON SW 활용 경진대회 논문집
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• 제4회(2015년)
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• pp.378-381
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• 2015

To produce low cost and efficient photovoltaic cells, inorganic-organic lead halide perovskite materials appear promising for most suitable solar cells owing to their high power conversion efficiency. Most recent research showes that formamidinium lead iodide ($FAPbI_3$) with methylammonium lead bromide ($MAPbBr_3$) improves the power conversion efficiency of the solar cell to more than 18 per cent under a standard illumination because incorporated $MAPbBr_3$ makes $FAPbI_3$-relatively unstable but comparatively narrow band gap-more stable composition. In respect to first principle study, we investigated band gap of $MAPbI_3$, $FAPbI_3$, $MAPbBr_3$, $(FAPbI_3)_{0.89}-(MAPbBr_3)_{0.11}$ and 0.615(eV), 0.466, 1.197, 0.518 respectively through EDISON DFT software. These results emphasize enhancing structure stability is important factor as well as finding narrow band gap.

• 한국전자파학회논문지
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• 제11권4호
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• pp.599-609
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• 2000

In this paper, sub-harmonically pumped single balanced resistive mixers are presented . Frequency bandwidth is selected for a Ku-band, which is 11.75-12.25GHz for RF, 5.375∼5.625 GHz for LO, and 1 GHz for IF signals. A rat-race hybrid is designed for the accomplishment of single balanced type. A low pass filter (LPF) with photonic band gap(PBG) structure is used for good conversion loss and unwanted harmonics suppression. Two types of mixers are suggested, which are one with no gate bias for no DC power consumption and the other with the IF amplifier for conversion gain. When a LO signal with the power of 6 dBm at 5.5 GHz is injected, a conversion loss of 12.17dB and a conversion gain of 7.83 dB are obtained for each mixer. For the both mixers , LO to RF isolation of 20 dB and LO to IF isolation of 60dB are obtained. With the RF power of -30dBm to -3dBm, the mixer shows linear characteristics region of IF. this mixer can be applied for Ku-band and other microwave communication systems.

• Current Photovoltaic Research
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• 제2권2호
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• pp.41-47
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• 2014

Extensive investigation on silicon based thin film reveals a wide range of film characteristics, from low optical gap to high optical gap, from amorphous to micro-crystalline silicon etc. Fabrication of single junction, tandem and triple junction solar cell with suitable materials, indicate that fabrication of solar cell of a relatively moderate efficiency is possible with a better light induced stability. Due to these investigations, various competing materials like wide band gap silicon carbide and silicon oxide, low band gap micro-crystalline silicon and silicon germanium etc were also prepared and applied to the solar cells. Such a multi-junction solar cell can be a technologically promising photo-voltaic device, as the external quantum efficiency of such a cell covers a wider spectral range.

• Bulletin of the Korean Chemical Society
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• 제34권9호
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• pp.2835-2838
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• 2013

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.52-57
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• 1995

An accurate and efficient single-integral semi-numerical model is developed and applied to analyse effects of localized electronic states in the mobility gap on the drain-current versus gale-voltage characteristics of hydrogenated amorphous field-effect transistors. It is shown that the low-density deep-gap states distributed in the midgap also sensitively and largely influence the device electronic performance as well as well as the large-density tail states distributed near the conduction band edge.

• 한국전자통신학회논문지
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• 제15권3호
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• pp.553-562
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• 2020

S 밴드, C 밴드 그리고 X 밴드 레이더는 기상 관측을 목적으로 사용되고 있다. 기상청, 환경부, 공군은 부처별 관측 목적에 따라 레이더를 운용하고 있기 때문에 설치 지점과 관측 특성이 서로 다르다. 기상 관측 관점에서는 지리산과 태백산 인근의 산악 지형을 따라 고도 1 km 이하의 저층 관측의 한계 지역이 나타난다. 소형 레이더 설치를 가정하여 저층 관측 보완을 모의하였다. 또한, 북한 지역의 위험 기상 감시를 위해 북한의 강수를 분석하고 대형 레이더 관측망을 모의하였다. 종합하여 한반도 레이더 관측망 구축안을 제시하였다.

• 전력전자학회논문지
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• 제23권3호
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• pp.168-173
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• 2018

In this paper, an auxiliary power supply (APS) for railroad cars is proposed. The APS can reduce the number of devices required to supply power through structural modification and operates at a high switching frequency by application of a SiC device. The voltage stress on the device in the proposed circuit can be reduced to less than half of the input voltage of the system; thus, a device with low breakdown voltage can be designed. By adapting a SiC device instead of an IGBT device, the proposed circuit can reduce switching and conduction losses and operate at a high switching frequency, thereby reducing output voltage and inductor current ripples in the proposed circuit. The theoretical analysis results of the proposed APS are verified with a 40 kW computer-based simulation and a 2 kW experiment.

• 전기학회논문지
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• 제68권1호
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• pp.77-82
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• 2019

In this paper, a 0.6~6GHz quad-ridge horn antenna which can be used for the antenna measurement of 5.8GHz WiFi system from lowest frequency band of mobile LTE (Long Term Evolution) is designed and implemented. The quad-ridge horn antenna has quadruple ridges of exponential function, a back-short and a cavity. Based on this structure, we design the cavity size, ridge gap and feed gap to have broadband characteristics. For implementation, the plates material of aluminum and copper are used for the horn and four ridges, respectively. And the insulator supports are used to maintain the gap between ridges. By measurement, antenna has the gain of 6.2~13.35dBi with the return loss of less than -6dB (under VSWR 3 : 1) in the entire design band. The results of this study can be widely used to the antenna studies on the mobile communication including low frequency band of LTE, the EMI measurement and the standard calibration measurement.