• Journal of the Korea Society of Computer and Information
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• v.24 no.11
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• pp.71-78
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• 2019

Most 3D displays that are currently in the market adopt the binocular disparity method creating a different image for the left and right eye for a 3 dimensional effect. However, commercialized 3D image output devices lack in performance making it uncomfortable for the viewer and restrict the viewer to certain positions. In this paper, we propose a single-cell polarized lens type stereoscopic system which has a smaller viewing angle and reduced crosstalk, with improved light penetration compared to existing double-cell structures; and analyzed the single-cell polarized lens type stereoscopic system properties, and conducted an effect analysis of performance improvement compared to the dual-cell type. Results showed that the single-cell type had a 25% improved performance, and the 3D crosstalk index which is an important index for quality characteristics of stereoscopic systems, increased over about 37%, compared to the dual-cell type.

• Korean Chemical Engineering Research
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• v.59 no.2
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• pp.165-173
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• 2021

Anti-glare (AG) coating films are applied to various display fields such as liquid crystal displays, LED lighting, and touch panels. In this study, micrometer-sized silica particles were added as fillers in the UV-curable coating solutions to provide anti-glare effect. During this process, the effects of the particle size, content, stirring time, and mixing ratio of silica particles of different sizes were investigated on the haze values and visible light transmittance of the coating films. As a result, as the size of the silica particles increased and the content of the silica particles increased, the haze values increased, but the visible light transmittance decreased. On the other hand, the stirring time did not significantly affect the haze value and transmittance of coating films. In addition, as the mixing ratio of large-sized silica particles increased, the haze value increased, but on the contrary, the visible light transmittance decreased.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.68-68
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• 2001

Thin films of polycrystalline silicon (poly-Si) is a promising material for use in large-area electronic devices. Especially, the poly-Si can be used in high resolution and integrated active-matrix liquid-crystal displays (AMLCDs) and active matrix organic light-emitting diodes (AMOLEDs) because of its high mobility compared to hydrogenated _amorphous silicon (a-Si:H). A number of techniques have been proposed during the past several years to achieve poly-Si on large-area glass substrate. However, the conventional method for fabrication of poly-Si could not apply for glass instead of wafer or quartz substrate. Because the conventional method, low pressure chemical vapor deposition (LPCVD) has a high deposition temperature ($600^{\circ}C-1000^{\circ}C$) and solid phase crystallization (SPC) has a high annealing temperature ($600^{\circ}C-700^{\circ}C$). And also these are required time-consuming processes, which are too long to prevent the thermal damage of corning glass such as bending and fracture. The deposition of silicon thin films on low-cost foreign substrates has recently become a major objective in the search for processes having energy consumption and reaching a better cost evaluation. Hence, combining inexpensive deposition techniques with the growth of crystalline silicon seems to be a straightforward way of ensuring reduced production costs of large-area electronic devices. We have deposited crystalline poly-Si thin films on soda -lime glass and SiOz glass substrate as deposited by PVD at low substrate temperature using high power, magnetron sputtering method. The epitaxial orientation, microstructual characteristics and surface properties of the films were analyzed by TEM, XRD, and AFM. For the electrical characterization of these films, its properties were obtained from the Hall effect measurement by the Van der Pauw measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.1
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• pp.98-106
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• 2009

This work proposes a 1280-RGB $\times$ 800-Dot 70.78mW 0.l3um CMOS LCD driver IC (LDI) for high-performance 16M-color low temperature poly silicon (LTPS) thin film transistor liquid crystal display (TFT-LCD) systems such as ultra mobile PC (UMPC) and mobile applications simultaneously requiring high resolution, low power, and small size at high speed. The proposed LDI optimizes power consumption and chip area at high resolution based on a resistor-string based architecture. The single column driver employing a 1:12 MUX architecture drives 12 channels simultaneously to minimize chip area. The implemented class-AB amplifier achieves a rail-to-rail operation with high gain and low power while minimizing the effect of offset and output deviations for high definition. The supply- and temperature-insensitive current reference is implemented on chip with a small number of MOS transistors. A slew enhancement technique applicable to next-generation source drivers, not implemented on this prototype chip, is proposed to reduce power consumption further. The prototype LDI implemented in a 0.13um CMOS technology demonstrates a measured settling time of source driver amplifiers within 1.016us and 1.072us during high-to-low and low-to-high transitions, respectively. The output voltage of source drivers shows a maximum deviation of 11mV. The LDI with an active die area of $12,203um{\times}1500um$ consumes 70.78mW at 1.5V/5.5V.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.42.2-42.2
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• 2010

Transparent conducting oxides (TCOs) are of significant importance for their applications in various devices, such as light-emitting diodes, thin-film solar cells, organic light-emitting diodes, liquid crystal displays, and so on. In order for TCOs to contribute to the performance improvement of these devices, TCOs should have high transmittance and good electrical properties simultaneously. Sn-doped $In_2O_3$ (ITO) is the most commonly used TCO. However, indium is toxic and scarce in nature. Thus, ZnO has attracted a lot of attention because of the possibility for replacing ITO. In particular, group III impurity-doped ZnO showed the optoelectronic properties comparable to those of ITO electrodes. Al-doped ZnO exhibited the best performance among various doped ZnO films because of the high substitutional doping efficiency. However, in order for the Al-doped ZnO to replace ITO in electronic devices, their electrical and optical properties should further significantly be improved. In this connection, different ways such as a variation of deposition conditions, different deposition techniques, and post-deposition annealing processes have been investigated so far. Among the deposition methods, RF magnetron sputtering has been extensively used because of the easiness in controlling deposition parameters and its fast deposition rate. In addition, when combined with post-deposition annealing in a reducing ambient, the optoelectronic properties of Al-doped ZnO films were found to be further improved. In this presentation, we deposited Al-doped ZnO (ZnO:$Al_2O_3$ = 98:2 wt%) thin films on the glass and sapphire substrates using RF magnetron sputtering as a function of substrate temperature. In addition, the ZnO samples were annealed in different conditions, e.g., rapid thermal annealing (RTA) at $900^{\circ}C$ in $N_2$ ambient for 1 min, tube-furnace annealing at $500^{\circ}C$ in $N_2:H_2$=9:1 gas flow for 1 hour, or RTA combined with tube-furnace annealing. It is found that the mobilities and carrier concentrations of the samples are dependent on growth temperature followed by one of three subsequent post-deposition annealing conditions.

• Journal of Mechanical Science and Technology
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• v.18 no.9
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• pp.1680-1688
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• 2004

The information indicating device plays an important part in the information times. Recently, the classical CRT (Cathod Ray Tube) display is getting transferred to the LCD (Liquid Crystal Display) one which is a kind of the FPDs (Flat Panel Displays). The OLED (Organic Light Emitting Diodes) display of the FPDs has many advantages for the low power consumption, the luminescence in itself, the light weight, the thin thickness, the wide view angle, the fast response and so on as compared with the LCD one. The OLED has lately attracted considerable attention as the next generation device for the information indicators. And also it has already been applied for the outside panel of a mobile phone, and its demand will be gradually increased in the various fields. It is manufactured by the vapor deposition method in the vacuum state, and the uniformity of thin film on the substrate depends on the temperature distribution in the point-cell source. This paper describes the basic concepts that are obtained to design the point-cell source using the computational temperature analysis. The grids are generated using the module of AUTOHEXA in the ICEM CFD program and the temperature distributions are numerically obtained using the STAR-CD program. The temperature profiles are calculated for four cases, i.e., the charge rate for the source in the crucible, the ratio of diameter to height of the crucible, the ratio of interval to height of the heating bands, and the geometry modification for the basic crucible. As a result, the blowout phenomenon can be shown when the charge rate for the source increases. The temperature variation in the radial direction is decreased as the ratio of diameter to height is decreased and it is suggested that the thin film thickness can be uniformed. In case of using one heating band, the blowout can be shown as the higher temperature distribution in the center part of the source, and the clogging can appear in the top end of the crucible in the lower temperature. The phenomena of both the blowout and the clogging in the modified crucible with the nozzle-diffuser can be prevented because the temperature in the upper part of the crucible is higher than that of other parts and the temperature variation in the radial direction becomes small.

• Resources Recycling
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• v.24 no.1
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• pp.58-65
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• 2015

Although Korea is a top market sharing and world leading producer and developer of flat panel display devices, relevant recycling technology is not up to her prestigious status. Besides, most of the waste glass arising from flat panel displays is currently land-filled. The present paper mainly reviews on development of recycling systems for waste TFT-LCD glass from end-of-life LCD TVs and monitors and TFT-LCD process waste of crushed glass particles with target end uses of raw material for high strength concrete pile and glass fibers, respectively. Waste LCD glass was recycled to fabricate ingredients for high strength concrete piles with enhanced physical properties and spherical foam products. The waste LCD glass recycling technology is already developed to fabricate long and short fibers at commercial level. In view of these, future R & D on waste LCD glass materials is to be directed toward implementation of commercial materials recycling system therefrom.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.4
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• pp.575-581
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• 2020

A colorless antistatic agent was prepared for use in antistatic films for liquid crystal displays (LCDs) requiring low surface resistance and high transmittance. Among various lithium-fluoro compounds and quaternary ammonium salts, antistatic materials were selected based on their electrical conductivity, and antistatic agents were prepared to measure the surface resistance. As a result, the material with high conductivity showed a relatively low surface resistance, i.e., relatively good antistatic performance. Based on the antistatic materials selected, the formulation ratio for producing the best antistatic agent was established through the experimental design method and the effects of each factor were analyzed. The higher the use of lithium- fluoro compounds as antistatic materials, the higher the ratio of oligomer use with multi-functional groups, and the smaller the surface resistance. The quaternary ammonium salts increased the antistatic performance of the lithium-fluoro compounds, but the effects of the amount used were not relatively large. After manufacturing the antistatic PET film, the properties of the antistatic film showed low surface resistance values (<10⁹ Ω/sq.), high permeability (>92%), low haze (<0.5%), and high whiteness (L^⁎>95). In addition, the antistatic film reliability was found to be excellent by showing a stable surface-resistance change rate of less than 10%, even under high temperature and high humidity conditions.