• Transactions of the Korean Society of Automotive Engineers
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• v.11 no.6
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• pp.141-146
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• 2003

This paper calculates the elapsed time to go down a straight as a function of the corner exit speed and considers air resistance, rolling resistance, and slope resistance to figure out the force for forward acceleration. In a car racing, the most critical comer in a course is the one before the longest straight. A driver can lose a quite amount of time by taking a bad line in a corner. Taking a bad line also causes poor comer exit speed which in turn costs more elapsed time to go down a straight. The results are not so dramatic as in the case of cornering but are showing why one should take the correct corner racing line to get the maximum exit speed. Also, for the case of drag race, the elapsed time to go 1/4 mile is calculated.

• Journal of the Korean Society of Safety
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• v.12 no.1
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• pp.37-43
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• 1997

There are two kinds of ground fault diagonosis system(GFD), which are for AC and DC power line. The ground fault current of a DC power line Is, first, analyzed for a description of a GFD system for DC power line and then the construction method of the GFD system, which could be processed and analyzed a ground fault current, are explained. Main functions of the system are that the detected ground fault current could be converted to the line insulation resistance by a program and saved in the system memory continuously. Finally a DC power line insulation safety could be decide by a change of the saved Insulation resistance for a given time. This system can detect the ground fault resistance to 100㏀.

• Journal of Electrical Engineering and information Science
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• v.3 no.1
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• pp.86-93
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• 1998

In this paper, we propose an effective on-line identification method for rotor resistance, which is useful in making speed control of induction motors without rotational transducers robust with respect to the variation in rotor resistance. Our identification method for rotor resistance is based on the linearly perturbed equations of the closed-loop system for sensorless speed control about th operating point. Our identification method for rotor resistance uses only the information of stator currents and voltages. In can provide fairly good identification accuracy regardless of load conditions. Some experimental results are presented to demonstrate the practical use of our identification method. For our experimental work, we have built a sensorless control system, in which all algorithms are implemented on a DSP. Our experimental results confirm that our on-line identification method allows for high precision speed control of commercially available induction motors without rotational transducers.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.54 no.2
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• pp.101-109
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• 2005

The newly developed speed sensorless control scheme is proposed to estimate both motor speed and rotor resistance simultaneously using variable rotor flux. The rotor flux is given as sinusoidal waveform with an amplitude and a frequency without affecting precise torque control. Especially the proposed method makes the simultaneous estimation of rotor resistance and speed with high precision even though at the low speed area including a few rpm. Moreover, on-line identification of rotor resistance can be performed simply without calculating troublesome trigonometric functions and complicated integral computation. Therefore, the proposed system can be accomplished by using very cheap microprocessors for several applications. The results of the numerical simulations and experiments demonstrate that this method is effective to estimate the speed and on-line identification of rotor resistance for sensorless induction motors.

• Proceedings of the Korean Society of Plant Pathology Conference
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• 2003.10a
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• pp.148.2-149
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• 2003

Cucumber fruit mottle mosaic tobamovirus (CFMMV) causes severe mosaic symptoms with yellow mottling on leaves and fruits, and occasionally severe wilting of cucumber plants. No genetic source of resistance against this virus has been identified. The genes coding for the coat protein or the putative 54-kDa replicase were cloned into binary vectors under control of the SVBV promoter. Agrobacterium-mediated transformation was peformed on cotyledon explants of a parthenocarpic cucumber cultivar with superior competence for transformation. R1 seedlings were evaluated for resistance to CFMMV infection by lack of symptom expression, back inoculation on an alternative host and ELISA. From a total of 14 replicase-containing R1 lines, 8 exhibited immunity, while only 3 resistant lines were found among a total of 9 CP-containing lines. Line 144 homozygous for the 54-kDa replicase was selected for further resistance analysis. Line 144 was immune to CFMMV infection by mechanical and graft inoculation, or by root infection following planting in CFMMV-contaminated soil. Additionally, line 144 showed delay of symptom appearance following infection by other cucurbit-infecting tobamoviruses. Infection of line 144 plants with various potyviruses and cucumber mosaic cucumovirus did not break the resistance to CFMMV. The mechanism of resistance of line 144 appears to be RNA-mediated, however the means is apparently different from the gene silencing phenomenon. Homozygote line 144 cucumber as rootstock demonstrated for the first time protection of a non-transformed scion from soil inoculation with a soil borne pathogen, CFMMV.

• Proceedings of the KIEE Conference
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• 2003.07a
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• pp.317-319
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• 2003

This paper describes an adaptive distance relay for double-circuit line protection with mutual impedance and fault resistance. Double-circuit lines have two operating condition; both lines of a double-circuit line are in operation and one line is switched-off and both ends of the line are grounded. For optimal distance protection, the trip region is calculated, which have respect to mutual impedance and fault resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.96-99
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• 1993

Electrical properties of the Thin Film Transistor(TFT) electrode metal films were investigated through the Test Elements Group(TEG) experiment. The main purpose of this investigation was to characterize the electrical resistance properties of patterned metal films with respect to the variations of film thickness and TEG metal line width. Aluminum(Al), Tantalum(Ta) and Chromium(Cr) that are currently used as TFT electrode films were selected as the probed metal films. To date, no work in the electrical characterizations of patterned electrodes of a-Si TFT was accomplished. Bulk resistance$(R_b)$, sheet resistance$(R_s)$, and resistivities($\rho$) of TEG patterned metal lines were obtained. Electrical continuity test of metal film lines was also performed in order to investigate the stability of metallization process. Almost uniform-linear variations of the electrical properties with respect to the metal line displacements was also observed.

• Journal of the Korean Institute of Telematics and Electronics
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• v.7 no.4
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• pp.1-5
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• 1970

This presents the way in shich the input impedance, and the output waveform of the line discriminator are influenced by a discrepancy of less than $\pm$10% in the coupling resistor resistance from the optium value(Characteristic impedance of the transmission line used in the line discriminator)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.349-349
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• 2010

Great performance of many semiconductor devices requirs the use of low-resistance ohmic contact. Typically, transmission line method (TLM) patterns are used to measure the specific contact resistance between silicon and metal. In this works, we investigate contact resistance for metal dependent (Cr/Ag, Ni) using TLM pattern based on silicon-on-insulator (SOI) wafer. The electrode with Ni linearly increases contact resistance as the pattern distance increase from $15{\mu}m$ to $75{\mu}m$ in accumulation part, but non-linearly increase in inversion part. In additional, the electrode with Cr/Ag linearly increases contact resistance as the pattern distance increase from $15{\mu}m$ to $75{\mu}m$ in inversion part, but non-linearly increase in accumulation part.

• Transactions on Electrical and Electronic Materials
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• v.17 no.1
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• pp.46-49
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• 2016

A thin film transistor (TFT) has been fabricated using the amorphous 0.5 wt% Si doped zinc-tin-oxide (a-0.5 SZTO) with different electrodes made of either aluminium (Al) or titanium/aluminium(Ti/Al). Contact resistance and total channel resistance of a-0.5SZTO TFTs have been investigated and compared using the transmission line method (TLM). We measured the total resistance of 1.0×10² Ω/cm using Ti/Al electrodes. This result is due to Ti, which is a material known for its adhesion layer. We found that the Ti/Al electrode showed better contact characteristics between the channel and electrodes compared with that made of Al only. The former showed a less contact and total resistance. We achieved high performance of the TFTs characteristic, such as Vth of 2.6 V, field effect mobility of 20.1 cm² V⁻¹s⁻¹, S.S of 0.9 Vdecade⁻¹, and on/off current ratio of 9.7×10⁶ A. It was demonstrated that the Ti/Al electrodes improved performance of TFTs due to enhanced contact resistance.