• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.75-80
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• 2006

We have fabricated a carbon nanotube field emission display(CNT-FED) panel with a 2 inch diagonal size using a screen printing method and in-situ vacuum sealing technology. The field emission properties of CNT FED panel with square-type CNT emitters. As results, the square-characterized and compared with those of the line-type CNT emitters. As results, the square-type CNT emitters showed much larger emission current and more stable I-V characteristics. Light emission started to be occurred at an electric field of 3.5 V/${\mu}m$ corresponding to the anode-cathode voltage of 700 V. The vacuum level inside of the in-situ vacuum sealed panel was obtained with $1.4 {\times} 10^{-5}$ torr. The sealed panel showed the similar I-V characteristics with the unsealed one and the uniform light emission with very high brightness at a current density of $243 {\mu}A/ cm^2$ obtained by the electric field of 10 V/${\mu}m$.

• Journal of the Korean Ceramic Society
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• v.32 no.11
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• pp.1262-1268
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• 1995

Photoelectrochemical properties of p-GaAs electrode have been investigated. I-V characteristic shows that the cathodic photocurrent is observed at -0.7 V vs. SCE. The photoresponse at near 870~880nm wavelength indicates that the photogenerated carriers contibuted to the observed current. The maximum converson efficiency of 35% is obtained for a Xe lamp light source at 400nm. In C-V relation, capacitance peaks appeared at the frequencies of 100Hz and 300Hz due to the activation of the interfacial states which exist at the energy level corresponding to the one-third of the GaAs band gap. The difference of about 1.1V between flatband potential (Vfb) from the Mott-Schottky method and onset voltage from I-V curve is observed due to the trap of carriers at the interfacial states in the boundary between GaAs and electrolyte. In case of WO3 deposited p-GaAs electrode, higher positive onset current and photocurent density are obtained. This can be explained by the fact that carriers are generated by light penetrated into the WO3 thin flm as well as p-GaAs substrate and then move into the electrolyte effectively.

• Journal of Radiation Protection and Research
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• v.29 no.4
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• pp.251-256
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• 2004

CsI(Tl), $CdWO_4(CWO),\;Bi_4Ge_3O_{12}(BGO)\;and\;Gd_2SiO_5:Ce(GSO)$ scintillators were studied to manufacture a phoswich detector. The maximum wavelengths of the CsI(Tl), CWO, BGO and GSO scintillators are 550 nm, 475 nm, 490 nm and 440 nm for the radioluminescence, and the absolute light outputs of the CsI(Tl), CWO, BGO and GSO scintillators are 54890 phonon/MeV, 17762 phonon/MeV, 8322 phonon/MeV and 8932 phonon/MeV with a neutral filter, and the decay time of the CsI(Tl), CWO, BGO and GSO scintillators is $1.3{\mu}s,\;8.17{\mu}s$, 213 ns and 37 ns by a single photon method. The phoswich detector which was manufactured with plastic and CsI(Tl) scintillators could separate the ${\beta}$ particle and ${\gamma}$ ray. The phoswich detector could also measure the pulse height spectra of the ${\beta}$ particle and ${\gamma}$ ray by a PSD method.

• Journal of Astronomy and Space Sciences
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• v.21 no.2
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• pp.73-82
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• 2004

New photometric and spectroscopic solutions of W-type overcontact binary V 417 Aql were obtained by solving the UBV light curves of Samec et al. (1997) and radial-velocity ones of Lu ＆ Rucinski (1999) with the 2003 version of the Wilson-Devinney binary code. In the light curve synthesis the light of a third-body, which Qian (2003) proposed, was considered and obtained about 2.7%, 2.2%, and 0.4% for U, B, and V bandpasses, respectively. The model with third-light is better fitted to eclipse parts than that with no third-light. Absolute dimensions of V417 Aql are determined from our solution as $M_1$= 0.53 $M_{*}$, $M_2$= 1.45 $M_{*}$, $R_1$= 0.84 $R_{*}$, and $R_2$= 1.31 $M_{*}$, and the distance to it is deduced as about 216pc. Our distance is well consistent with that (204pc) derived from Rucinski ＆ Duerbeck's (1997) relation, $M_{v}$ = $M_{v}$(log P, B-V), but is more distant than that (131$\pm$40pc) determined by the Hipparcos trigonometric parallax. The difference may result from the relatively large error of Hipparcos parallax for V 417 Aql.l.

• Journal of the Institute of Convergence Signal Processing
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• v.13 no.3
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• pp.162-165
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• 2012

In this paper, the method of controlling velocity between joining vehicles at the point of bottleneck using information and communications technology of WAVE method based V2V and V2I are proposed for the driving with high fuel efficiency. Using the derived fuel-efficiency comparative analysis model, it was shown that the proposed method's fuel efficiency is better than traffic light method demanding periodically vehicle's stop. Also, this method provides the derivation algorithm for deceleration and acceleration for controlling velocity between vehicles approaching bottleneck area.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.93-98
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• 2020

We investigated the effect of a post-annealing process using ultraviolet (UV) light on the electrical properties of solution-processed InZnO (IZO) thin-film transistors (TFTs). UV light was irradiated on IZO TFTs for different time periods of 0s, 30s, and 90s. We measured transfer and retention stability curves to evaluate the performance of the fabricated TFTs. In addition, we measured height, amplitude, and phase AFM images to analyze changes in the surface and morphology of the devices. AFM measurements were performed by setting the drive amplitude of the cantilever tip to 47.9 mV in tapping mode, then dividing the device surface into 500 nm × 500 nm. In the case of IZO TFT irradiated with UV for 30s, the electron mobility and I_on/I_off ratio were improved, the threshold voltage was reduced by approximately 2 V, and the subthreshold swing also decreased form 1.34 V/dec to 1.11 V/dec.

• Journal of the Korean Applied Science and Technology
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• v.39 no.5
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• pp.589-595
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• 2022

The white OLED is fabricated with the anthracene-based blue emitting material, 9-(2-naphthyl)-10-(p-tolyl)anthracene (2-NTA) in various volume-ratios of orange dopant, rubrene, which results in pure white emission with C.I.E. coordinate of ~(0.32, 0.39). The devices with <1.5% rubrene show better EL properties (efficiency) than >3% devices. Furthermore the turn-on voltage of 2-NTA WOLED (3.7 V) is lower than that of 2-NTA blue OLED (5.4 V) at the same condition. Conclusively 2-NTA with rubrene less than 1.5% (v/v) could be utilized for the pure WOLED.

• Polymer(Korea)
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• v.30 no.3
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• pp.253-258
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• 2006

We have fabricated vortical type organic thin film transistors (OTFTs) consisting of ITO/n type active material/Al gate/n type active material/Al using F16CuPc, NTCDA, PTCDA and PTCDI C-8. The effect of mobility of n type active materials and thin film thickness on current-voltage (I-V) characteristics and on/off ratios were investigated. The vortical type organic transistor using PTCDI C-8 exhibited low operation voltage and high on-off ratio. In addition, we have investigated the feasibility of application in organic light emitting transistor using light emitting polymer. Especially, the light emitting transistor consisting of ITO/PEDOT-PSS/P3HT/F16CuPc/Al gate/F16CuPc/Al showed the maximum quantum efficiency of 0.054.

• International Journal of Quality Innovation
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• v.7 no.3
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• pp.58-69
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• 2006

This paper presents neural network-based recognition system for automatic light emitting diode (LED) inspection. The back-propagation neural network (BPNN) is proposed and tested. The current-voltage (I-V) characteristic data of LED from the inspection process is used for the network training and testing. This study selects 300 random samples as network training and employs 100 samples as network testing. The experimental results show that if the classification work is done well, the accuracy of recognition is 100%, and the testing speed of the proposed recognition system is almost one half faster than the traditional inspection system does. The proposed neural-network approach is successfully demonstrated by real data sets and can be effectively developed as a recognition system for a practical application purpose.

• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.645-650
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• 2000

this paper deals with HVDC Light(High Voltage Direct Current) system using space vector PWM(SVPWM) method. Because the system of this paper has d-q control scheme for HVDC Light system. HVDC Light system represented in this paper is capable of controlling active and reactive power independently. For this system. V-I curve and control methods are proposed. Also this paper describes the design of a digital system for applications in power converters such as those that would be used in the next generation of HVDC system. Finally HVDC system is implemented using DSP TMS320C31