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Advanced Frame Rate Conversion without Halo and judder effect for 120Hz LCD Displays

  • Lim, Kyoung-Won;Kim, Han-Soo;Noh, Hyun-Chul;Shin, Hyun-Chul;Jung, Woo-Chul;Koo, Gun-Jae;Park, Ryuk
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1397-1400
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    • 2008
  • Frame rate conversion became key technology due to recent advances in LCD panel refresh rates. Although many FRC algorithms have been developed and applied for LCD TV sets, they still suffer from well-known halo artifact. This paper discusses about the artifacts and method to handle them.

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Narrow Channel Formation Using Asymmetric Halftone Exposure with Conventional Photolithography

  • Cheon, Ki-Cheol;Woo, Ju-Hyun;Jung, Deuk-Soo;Park, Mun-Gi;Kim, Hwan;Lim, Byoung-Ho;Yu, Sang-Jean
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.258-260
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    • 2008
  • Developed halftone exposure technique was successfully applied to the fabrication of narrow transistor channels below $4\;{\mu}m$ with conventional photolithography method. Asymmetric slits concept of photo mask was applied to make channel lengths (L) shorter for thin film transistor's (TFT) high performance. These short channel TFTs verified better quality transistor characteristics.

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Dependence of Self-heating Effect on Width/Length Dimension in p-type Polycrystalline Silicon Thin Film Transistors

  • Lee, Seok-Woo;Kim, Young-Joo;Park, Soo-Jeong;Kang, Ho-Chul;Kim, Chang-Yeon;Kim, Chang-Dong;Chung, In-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.505-508
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    • 2006
  • Self-heating induced device degradation and its width/length (W/L) dimension dependence were studied in p-type polycrystalline silicon (poly-Si) thin film transistors (TFTs). Negative channel conductance was observed under high power region of output curve, which was mainly caused by hole trapping into gate oxide and also by trap state generation by self-heating effect. Self-heating effect became aggravated as W/L ratio was increased, which was understood by the differences in heat dissipation capability. By reducing applied power density normalized to TFT area, self-heating induced degradation could be reduced.

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Chemical structure of the bilayer $Ag/Li_2O$ cathode interface in organic light-emitting diodes

  • Joo, Min-Ho;Baik, Min-Kyung;Choi, Jong-Kwon;Park, Kyu-Ho;Lee, Jay-Man;Kim, Myung-Seop;Yang, Joong-Hwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1006-1009
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    • 2006
  • The chemical structure of the interface between Ag with $Li_2O$ and tri (8-hydroxyquinoline) aluminum (Alq) was investigated by using in-situ characterization of x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). $Li_2O$ on Ag had lower barrier height than LiF on Ag. XPS and UPS results show the interaction between $Li_2O$ and Alq leads to gap state formation in HOMO of Alq.

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Development of Superconducting Fault Current Limiter using RTDS (RTDS를 이용한 초전도 한류기 모델 개발)

  • Lee, Joo-Hun;Lee, Jin;Lee, Wook-Hwa;Kim, Yong-Gil;Oh, Il-Song;Lee, Bang-Wook;Park, Kwon-Bae
    • Proceedings of the KIEE Conference
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    • 2002.07a
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    • pp.216-219
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    • 2002
  • This paper describes the modelling method of the Superconducting Fault Current Limiters (SFCL) for Real-Time Digital Simulator (RTDS). The simulations in this paper were carried out using the R type SFCL. The R type SFCL is developed by using User Defined Component (UDC).

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Breakdown properties in relation with adhesion force for Polymeric meterial of the high voltage cable joints (초고압 지중선 고무접속재 제조용 고분자재료의 부품간 접착력에 기인하는 절연파괴특성)

  • Ji, Eung-Seo;Kwon, Yoon-Hyouk;Ko, Eui-Gon;Kim, Ji-Hwan;Lee, Sang-Jin;Choi, Soo-Geol;Yoon, Seung-Hoon
    • Proceedings of the KIEE Conference
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    • 2002.11b
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    • pp.224-225
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    • 2002
  • 초고압 지중선로를 연결하는 접속함의 절연재료는 최근 에폭시에서 고무재질로 변화되고 있는 추세이다. 본 논문에서는 접속재용 고무절연재료를 선정하기 위한 전기적, 기계적인 방법을 소개하였고, 전기적 절연특성과 접착특성간에 상관관계가 있는지에 대하여 고찰하였다. 특히 실제 제품의 절연-반도전간 interface특성을 모의할 수 있는 특수형태의 매입형 전극을 설계, 제조 및 시험후 동일시료에서 접착특성 확인용 시편을 채취 및 실험함으로써 전기적특성과 기계적특성간의 직접적인 상관관계를 규명할 수 있었다. 또한 실험을 통해서 초고압 지중선로용 접속함을 위한 최적의 고무재질 선정이 가능하였다.

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First Installation of High Stress EHV XLPE Cable in korea (초고압 고내력 케이블 국내 최초 현장 적용)

  • Oh, J.O.;Cho, S.H.;Lee, S.K.;Kim, H.J.;Oh, D.S.
    • Proceedings of the KIEE Conference
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    • 1999.11d
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    • pp.1057-1059
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    • 1999
  • Recently, increased demand of electrical energy caused additional installation of underground power cable, Industrialization of metro makes civil works difficult. So installed ducts became a key of underground power transmission, LG cable set to work development of high stress cable. LG cable stated in 1996, got a certificate of type test in 1998, and applied at domestic site in Nov. 1999. High stress cable has some merit, decrease of civil cost, reduction of work time, by reason of decrease of dia. and weight, and economical system design, so LG cable has a good merit in comparison with competitive company in domestic and foreign market.

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Silicon Nitride Cantilever Array Integrated with Si Heaters and Piezoelectric Sensors for Probe-based Data Storage

  • Nam Hyo-Jin;Kim Young-Sik;Lee Caroline Sunyong;Jin Won-Hyeog;Jang Seong-Soo;Cho Il-Joo;Bu Jong-Uk
    • Transactions of the Society of Information Storage Systems
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    • v.1 no.1
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    • pp.73-77
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    • 2005
  • In this paper, a new silicon nitride cantilever integrated with silicon heater and piezoelectric sensor has been firstly developed to improve the uniformity of the initial bending and the mechanical stability of the cantilever array for thermo-piezoelectric SPM(scanning probe microscopy) -based data storages. This nitride cantilever shows thickness uniformity less than $2\%$. Data bits of 40 nm in diameter were recorded on PMMA film. The sensitivity of the piezoelectric sensor was 0.615 fC/nm after poling the PZT layer. For high speed operation, 128${\times}$128 probe array was developed.

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LGE's Strategy for PDP TV

  • Kim, Jae-Sung;Lee, Sung-Hyun;Ahn, Sung-Yong;Ahn, Young-Joon;Ryu, Jae-Hwa;Yoon, Kwang-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.71-74
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    • 2005
  • There have been various efforts to achieve a better PDP TV, which have low power consumption, high image quality and low price. As the results, the power consumption of LG's new 42 inch HD PDP could be lower than 42 inch LCD under the general movie display load condition. And the address discharge time lag of ${\sim}1\;{\mu}s$ for 42 and 50 inch XGA single scan by which the cost can be reduced and image quality can be improved was achieved by using new MgO material and driving waveform. In addition, we have suggested TCA (Triangular Color pixel Arrangement) cell structure for realizing the full HDTV of 60inch diagonal size, which has $1920{\times}1080$ resolution. The luminous efficiency of the suggested TCA structure has been increased about 40% compared with that of the conventional cell structure.

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Abnormal Discharge Characteristics of Fluorescent Lamp

  • Lee, Chang-Ho;Kang, Jae-Kyung;Jang, Eun-Seok;Kim, Jae-Bum;Park, Joon-Ha;Shin, Jong-Keun;Chung, In-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1425-1427
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    • 2009
  • In this paper, we investigated influence of gas pressure and gas mixing ratio on the abnormal discharge characteristics of fluorescent lamp. Abnormal discharge characteristics have been examined by changing inner gas pressure and mixing ratio. As the inner gas pressure and mixing ratio increase, the occurrence of abnormal discharge was delayed. It was found out that the occurrence of abnormal discharge is sufficiently delayed at the optimized inner gas pressure and mixing ratio.

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