• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.212-217
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• 2000

Bi$_2$Sr$_2$CuO$_{x}$(Bi-2201) thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering(IBS) process. During the deposition, 14 wt%-ozone/oxygen mixture gas of typical pressure of 5.0$\times$10$^{-5}$ Torr is supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi-2201 is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.n.

• 한국재료학회지
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• 제22권4호
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• pp.190-194
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• 2012

The formation of high-quality polycrystalline silicon (poly-Si) on relatively low cost substrate has been an important issue in the development of thin film solar cells. Poly-Si seed layers were fabricated by an inverse aluminum-induced crystallization (I-AIC) process and the properties of the resulting layer were characterized. The I-AIC process has an advantage of being able to continue the epitaxial growth without an Al layer removing process. An amorphous Si precursor layer was deposited on Corning glass substrates by RF magnetron sputtering system with Ar plasma. Then, Al thin film was deposited by thermal evaporation. An $SiO_2$ diffusion barrier layer was formed between Si and Al layers to control the surface orientation of seed layer. The crystallinity of the poly-Si seed layer was analyzed by Raman spectroscopy and x-ray diffraction (XRD). The grain size and orientation of the poly-Si seed layer were determined by electron back scattering diffraction (EBSD) method. The prepared poly-Si seed layer showed high volume fraction of crystalline Si and <100> orientation. The diffusion barrier layer and processing temperature significantly affected the grain size and orientation of the poly Si seed layer. The shorter oxidation time and lower processing temperature led to a better orientation of the poly-Si seed layer. This study presents the formation mechanism of a poly seed layer by inverse aluminum-induced crystallization.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권2호
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• pp.76-79
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• 1999

Low-hydrogenated DLC films were coated on the Mo-tip FEAs by 'layer-by-layer' process based on the plasma-enhanced CVD method. The hydrogen content in the DLC film deposited by the 'layer-by-layer' process was appeared to be remarkably lowered through SIMS analysis. Also, the low-hydrogenated DLC-coated Mo-tip FEA showed good potentiality for FED applications in terms of turn-on voltage, emission current, emission stability and light emitting uniformity.

• 한국기계가공학회지
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• 제12권1호
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• pp.104-109
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• 2013

In order to apply nano imprint technology in large area process, roller pressing is promising because of its low cost and high productivity. When pressing mold by roller, liquid resin is locally squeezed between mold and substrate. In this study, the main focus is to understand which process parameter affects residual layer. To do this, a simple analytical model was introduced. Especially, we consider the aspect ratio of patterns as essential cause of variation of the thickness in the equation. As a result, when the aspect ratio of pattern in the mold increases, the thickness of residual layer also increases. In conclusion, we show that the uniformity of residual layer could be accomplished by the control of velocity and pressing force in roller pressing imprint process.

• 한국지능시스템학회:학술대회논문집
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• 한국퍼지및지능시스템학회 1998년도 The Third Asian Fuzzy Systems Symposium
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• pp.352-357
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• 1998

Conventional marketing research generally focuses on a single layer's benefit. A notable example is the consumer layer providing managers with partial market information to evaluate relevant strategies. As generally known, marketing management encounters complex supply and demand behaviors, thereby necessitation that a successful marketing strategy adopt multi-layer considerations, such as the consumer layer, channel-retailer layer, and marketing planner layer. In light of above situation, this study applies fuzzy theory and the analytic hierarchy process(AHP) technique to analyze the performances of marketing strategies under multi-layer benefits, In addition, conventional marketing research has difficulty in efficiently allocating the limited budget so that each desired criterion can be significantly enhanced by a group of events. Therefore, a weighting structure among the goal, layers, criteria, and strategies(i.e. a group of events) is also developed herein to trace the influential process and assist marketing managers in efficiently allocating resources(i.e.budget).

• Journal of Welding and Joining
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• 제11권2호
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• pp.74-85
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• 1993

Effect of Si metal powders addition with the plasma transferred arc(PTA) overlaying process on characteristics of the alloyed layer in aluminum alloy(A5083) has been investigated. The overlaying conditions were 175-250A in plasma arc current, 500mm/min in travel speed, the 5-20g/min in powder feeding rate. Main results obtained are summarized as follows. 1)Sufficient size of molten pool on surface of base metal was required for forming an alloyed layer; in a fixed travel, the formation of alloyed layer with clear and beautiful surface depend upon the plasma arc current and powder feeding rate; the greater plasma arc current and the smaller powder feeding rate were, the better bead was formed. Optimum alloyed conditions by which an excellent alloyed bead obtained was 225A in plasma arc current. PTA process made it possible to form an alloyed layer with up to 67wt% Si. 2)Microstructure in the alloyed layer was in accord with prediction from the Al-Si phase diagram 3)The hardness of the alloyed layer increased in proportion to Si content. 4)As volume fraction of primary Si increased, the specific wearness of the alloyed layer was significantly improved. However, no further improvement was found when the volume fraction was greater than about 30%. 5)Utilizing the PTA process, a crack free alloyed layer with maximum hardness of about Hv 310 could be obtained.

• 한국재료학회지
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• 제12권12호
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• pp.955-961
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• 2002

2.7vol%TiNi/6061 Al composites with TiNi shape memory alloy as reinforcement were fabricated by vacuum hot press. It was investigated by OM, SEM, EPMA and XRD analysis for the behavior of diffusion layer formation on various heat treatment condition. Thickness of diffusion layer was increased proportionally according to heat treatment time. The layer was formed by the mutual diffusion of TiNi and Al. The diffusion rate from TiNi fiber to Al matrix was faster than that of reverse diffusion path. The more diffused layer was formed in Al matrix. The diffusion at interface layer was consisted of $A1_3$Ti, $Al_3$Ni analyzed by EPMA, XRD results.

• 한국정밀공학회지
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• 제12권11호
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• pp.52-62
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• 1995

In the laser surface hardening process the geometrical parameters, especially the depth, of the hardened layer are utilized to assess the integrity of the hardening layer quality. Monitoring of this geometrical parameter ofr on-line process control as well as for on-line quality evaluation, however, is an extremely difficult problem because the hardening layer is formed beneath a material surface. Moreover, the uncertainties in monitoring the depth can be raised by the inevitable use of a surface coating to enhance the processing efficiency and the insufficient knowledge on the effects of coating materials and its thicknesses. The paper describes the extimation results using neural network to estimate the hardening layer depth from measured surface temperanture and process variables (laser beam power and feeding velocity) under various situations. To evaluate the effec- tiveness of the measured temperature in estimating the harding layer depth, estimation was performed with or without temperature informations. Also to investigate the effects of coating thickness variations in the real industry situations, in which the coating thickness cannot be controlled uniform with good precision, estimation was done over only uniformly coated specimen or various thickness-coated specimens. A series of hardening experiments were performed to find the relationships between the hardening layer depth, temperature and process variables. The estimation results show the temperature informations greatly improve the estimation accuracy over various thickness-coated specimens.

• 한국표면공학회지
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• 제48권2호
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• pp.33-37
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• 2015

High efficiency LED device is being concerned due to its high heat loss, and such heat loss will cause a shorter lifespan and lower efficiency. Since there is a demand for the materials that can release heat quickly into the external air, the organic insulating layer was required to be replaced with high thermal conductive materials such as metal or ceramics. Through anodizing the upper layer of Al, the Breakdown Voltage of 3kV was obtained by using an uniform thickness of $60{\mu}M$ aluminum oxide($Al_2O_3$) and was carried out to determine the optimum process conditions when thermal cracking does not occur. Two Ni layers were formed above the layer of $Al_2O_3$ by sputtering deposition and electroplating process, and saccharin was added for the purpose of minimizing the remain stress in electroplating process. The results presented that the 3-layer film including the Ni layer has an adhesive force of 10N and the thermal conductivity for heat dissipation is achieved by 150W/mK level, and leads to improvement about 7 times or above in thermal conductivity, as opposed to the organic insulation layer.

• Applied Science and Convergence Technology
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• 제26권5호
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.