• 전기학회논문지
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• 제61권2호
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• pp.237-242
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• 2012

In this paper, we investigated effects of ITO electrode geometry and dielectric layer thickness on the discharge Characteristic of AC PDP. As the dielectric thickness is decreased ($30{\sim}12{\mu}m$), firing and sustain voltage is decreased. Luminance and discharge power increase with decreasing dielectric layer thickness because of increasing capacitance between plasma and electrodes. Reactive power decreases with dielectric thickness due to reduced capacitance between sustain electrodes. For the high Xe test panel with small ITO electrode, luminous efficacy as well as luminance increase with decreasing dielectric layer thickness. This result suggest that high power density and small plasma volume is beneficial for high efficacy discharge.

• 통합자연과학논문집
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• 제3권4호
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• pp.206-209
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• 2010

As the etching time is varied, the change of thickness of the porous silicon layers was successfully investigated. The thickness of the PSi layer as a function of anodization time for a p-type substrate that is etched at a constant current density of 50 $mA/cm^2$ in a 35% hydrofluoric acid solution shows a linear relationship between the etching time and the thickness of the PSi layer.

• 한국전기전자재료학회논문지
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• 제27권1호
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• pp.45-49
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• 2014

We have fabricated white organic light-emitting diodes (OLEDs) using several thicknesses of electron-transport layer. The multi-emission layer structure doped with red and blue phosphorescent guest emitters was used for achieving white emission. 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) was used as an electron-transport layer. The thickness of BCP layer was varied to be 20, 55, and 120 nm. The current efficiency, emission and recombination characteristics of multi-layer white OLEDs were investigated. The BCP layer thickness variation results in the shift of emission spectrum due to the recombination zone shift. As the BCP layer thickness increases, the recombination zone shifts toward the electron-transport layer/emission-layer interface. The white OLED with a 55 nm thick BCP layer exhibited a maximum current efficiency of 40.9 cd/A.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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• pp.27-28
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• 2008

We have studied an organic layer-thickness dependent electrical and optical properties of organic light-emitting diodes in a device structure of ITO/TPD/$Alq_3$/LiF/Al. While a hole-transport layer thickness of TPD was varied from 35 to 65nm, an emissive layer thickness of $Alq_3$ was varied from 50 to 100nm. A ratio of those two layers was kept to about 2:3. Variation of the layer thickness changes a traverse time of injected carriers across the organic layer, so that it may affect on the chance of probability of exciton formation. Current-voltage-luminance characteristics of the devices show that there are typical rectifying behaviors, and the luminance reaches about $30,000cd/m^2$. Thickness-dependent current efficiency shows that there is a gradual increase of the efficiency as the total layer thickness increases. The efficiency becomes saturated to be about 10cd/A when the total thickness is above 140nm. They show that emission was from the $Alq_3$ layer, because the peak wavelength is about 525nm. View angle-dependent emission spectra show that the emission intensity decreases as the angle increases.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.43-46
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• 1988

In this paper, a methodology for determination of the thickness of layer on a substrate using reflection acoustic microscope has been presented. It has been shown that the amplitude and the phase of reflection coefficient of the layer-substrate composite has been used for measurement of layer thickness, acoustic velosity, mass density of the layer material. The reflection acoustic microscope operating at a frequency of 15 MHz has been used for the experiment and the measured acoustic impedance value for aluminum sample has agreed with the published data, and the measured layer thickness for silver-glass composite has agreed with that measured using micrometer.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2005년도 춘계학술대회 논문집
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• pp.266-269
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• 2005

The effect of exit temperature on the thickness of recrystallization layer during Al extrusion process was investigated. The recrystallization layer of an extruded Al alloy is an important feature of the product in a wide range of applications, particularly those within the automotive industry. The thicker recrystallized layer in the Al alloys can give rise to a number of problems including reduced fatigue resistance and orange peel during cold forming. But the interaction of extrusion process variables with the thickness of recrystallization layer is poorly understood, and there is limited information available regarding the role of the main hot extrusion variables. Using the 3650 US ton extrusion press, this paper describes the effect of the main process variables such as billet temperature, ram speed, and exit temperature on the thickness of recrystallization layer for the A6XXX Al alloy.

• 대한기계학회논문집B
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• 제29권8호
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• pp.956-962
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• 2005

A three-dimensional computation was conducted to make a study about effects of the inlet boundary layer thickness on the total pressure loss in a low-speed axial compressor operating at the design condition ($\phi=85\%$) and near stall condition($\phi=65\%$). Differences of the tip leakage flow and hub corner-stall induced by the inlet boundary layer thickness enable the loss distribution of total pressure along the span to be altered. At design condition, total pressure losses for two different inlet boundary layers are almost alike in the core flow region but the larger loss is generated at both hub and tip when the inlet boundary layer is thin. At the near stall condition, however, total pressure loss fer the thick inlet boundary layer is found to be greater than that for the thin inlet boundary layer on most of the span except the region near hub and casing. Total pressure loss is scrutinized through three major loss categories in a subsonic axial compressor such as profile loss, tip leakage loss and endwall loss using Denton's loss model, and effects of the inlet boundary layer thickness on the loss structure are analyzed in detail.

• Journal of Ceramic Processing Research
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• 제19권5호
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• pp.401-406
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• 2018

We investigated the effect of ZnO seed layer thickness on the density of ZnO nanorod arrays. ZnO has been deposited using two distinct processes consisting of the seed layer deposition using ALD and subsequent hydrothermal ZnO growth. Due to the coexistence of the growth and dissociation during ZnO hydrothermal growth process on the seed layer, the thickness of seed layer plays a critical role in determining the nanorod growth and morphology. The optimized thickness resulted in the regular ZnO nanorod growth. Moreover, the introduction of ALD to form the seed layer facilitates the growth of the nanorods on ultrathin seed layer and enables the densification of nanorods with a narrow change in the seed layer thickness. This study demonstrates that ALD technique can produce densely packed, virtually defect-free, and highly uniform seed layers and two distinctive processes may form ZnO as the final product via the initial nucleation step consisting of the reaction between $Zn^{2+}$ ions from respective zinc precursors and $OH^-$ ions from $H_2O$.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2000년도 International Symposium on Magnetics The 2000 Fall Conference
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• pp.369-376
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• 2000

Change of magnetic properties in CoCrPt/Ti perpendicular media with varying CoCrPt films thickness has been studied. As CoCrPt films thickness increase, the Ms(magnetization saturation) drastically increases at thinner thickness and gradually increases with further increase in thickness from 25nm. This Ms behaviour is associated with primarily the formation of "amorphous-like" reacted layer by intermixing of CoCrPt and Ti at CoCrPt/Ti interface and secondarily change of Cr segregation mode with varying the CoCrPt films thickness. Magnetic domain structure distinctively changes with increasing CoCrPt magnetic layer(ML) thickness. Also the strength of exchange coupling measured from the slope in demagnetizing region in M-H loop changes with ML thickness. Details of the above magnetic properties will be discussed. The expansion of lattice parameters a and c at thinner thickness suggests that Cr segregation mode may be connected with the residual stress of the films. Finally, negative nucleation field(Hn) behaviour with the exchange slope will be reported.

• Transactions on Electrical and Electronic Materials
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• 제10권1호
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• pp.28-30
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• 2009

We have studied organic layer-thickness dependent electrical and optical properties of bottom- and top-emission devices. Bottom-emission device was made in a structure of ITO(170 nm)/TPD(x nm)/$Alq_3$(y nm)/LiF(0.5 nm)/Al(100 nm), and a top-emission device in a structure of glass/Al(100 nm)/TPD(x nm)/$Alq_3$(y nm)/LiF(0.5 nm)/Al(25 nm). A hole-transport layer of TPD (N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine) was thermally deposited in a range of 35 nm and 65 nm, and an emissive layer of $Alq_3$ (tris-(8-hydroxyquinoline) aluminum) was successively deposited in a range of 50 nm and 100 nm. Thickness ratio between the hole-transport layer and the emissive layer was maintained to be 2:3, and a whole layer thickness was made to be in a range of 85 and 165 nm. From the current density-luminance-voltage characteristics of the bottom-emission devices, a proper thickness of the organic layer (55 nm thick TPD and 85 nm thick $Alq_3$ layer) was able to be determined. From the view-angle dependent emission spectrum of the bottom-emission device, the peak wavelength of the spectrum does not shift as the view angle increases. However, for the top-emission device, there is a blue shift in peak wavelength as the view angle increases when the total layer thickness is thicker than 140 nm. This blue shift is thought to be due to a microcavity effect in organic light-emitting diodes.