• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.3
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• pp.53-60
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• 2012

The fall-of-potential method is commonly used in measuring the ground resistance of large-scaled grounding system and the current and potential auxiliary electrodes are horizontally arranged. Because the distances between the ground grid to be tested and auxiliary electrodes are limited in downtown areas, it is very difficult to measure accurately the ground resistance of large-scaled grounding system. In this paper, the fall-of-potential method of measuring the ground resistance with the vertically-placed current and potential auxiliary electrodes was examined and discussed. The validity and good accuracy of the proposed method of measuring the ground resistance were confirmed through various simulations and actual tests carried out in uniform and two-layer soil structures.

• Journal of applied mathematics & informatics
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• v.3 no.2
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• pp.265-278
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• 1996

This paper is composed of the complete representation of two dimensional single layer potentials with linear strength on a straight line segment and its far field behavior which is closely related to the pose of this line segment. The far field behavior of a single layer potential on a given curve has informations of the shape of the curve.

• Journal of the Korean Chemical Society
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• v.18 no.6
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• pp.391-399
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• 1974

Corrosion and passivation of metallic cobalt was studied by means of electrochemical experiments including potentiostatic and galvanostatic measurements and cyclic voltammograms. The mechanisms of active dissolution and passivation of cobalt at the metal/borate buffer solution interface are deduced from the Tafel slope, pH dependence of the Flade potential, and dissolution kinetic data. Hydroxyl group adsorbed on cobalt surface seems to participate in surface oxidation and formation of the passive layer. The growth kinetic data as measured by the current density suggests a mechanism in which the growth of the passive layer is determined by field-assisted transport of ions through the layer. Thickness of the passive layer was estimated by coulometry to be about 10${\AA}$ at the lowest passive potential and to grow gradually with anodic potential to about 20${\AA}$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.6
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• pp.68-74
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• 2011

The touch or step voltages which exist in the vicinity of a grounding electrode are closely related to the earth structure and resistivity and the ground current. The grounding design approach is required to determine the grounding electrode location where the hazardous voltages are minimized. In this paper, in order to propose a method of mitigating the electric shock hazards caused by the ground surface potential rise in the vicinity of a counterpoise, the hazards relevant to touch voltage were evaluated as a function of the soil resistivity ratio $\rho_2/\rho_1$ for several practical values of two-layer earth structures. The touch voltage and current on the ground surface just above the test electrode are calculated with CDEGS program. As a consequence, it was found that burying a grounding electrode in the soil with low resistivity is effective to reduce the electric shock hazards. In the case that the bottom layer soil where a counterpoise is buried has lower resistivity than the upper layer soil, when the upper layer soil resistivity is increased, the surface potential is slightly raised, but the current through the human body is reduced with increasing the upper layer soil resistivity because of the greater contact resistance between the earth surface and the feet. The electric shock hazard in the vicinity of grounding electrodes is closely related to soil structure and resistivity and are reduced with increasing the ration of the upper layer resistivity to the bottom layer resistivity in two-layer soil.

• Journal of Environmental Science International
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• v.10 no.6
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• pp.417-422
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• 2001

The vertical structure of atmosphere was observed In investigate the variation of surface ozone concentration by vertical downward mixing of residual ozone in the atmospheric boundary layer at the Busan coastal area. Airsonde and pilot balloon measurements were made at Gamcheondong and the Kimhae airport for April 26~27, 1996. The vertical potential of potential temperature showed a residual layer between 510m and 1800m from 2100LST April 26 to 0900LST April 27. The downward mixing of ozone in the residual layer of the atmospheric boundary layer was confirmed from vertical profile of mixing ratio near 600m in the morning. The thickness of the sea breeze layer was 900m at 1500LST April 26. Thereafter, it become to be lowered with time A low level jet was measured near 900m at 0300LST on April 27 from a pibal measurement. Early morning sharp increase of surface ozone concentration at the Busan coastal area was caused by vertical downward mixing of ozone concentration rather than by photochemical reaction In the atmospheric boundary layer.

• Bulletin of the Society of Naval Architects of Korea
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• v.16 no.3
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• pp.35-47
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• 1979

Wave resistance of a parabolic thin ship, with its boundary layer and wake taken into account, was calculated up to second order. In addition to the double-model source distribution on the centerplane, image sources of the wave potential were calculated to keep the body introduced boundary condition undisturbed. Boundary layer and wake effects on the wave-making resistance were included by generating an irrotational flow which matches that exterior to the boundary layer and wake. For this purpose, the boundary layer and wake were calculated. The wave resistance refined with second-order corrections are found to be very important for wave resistance calculations even at moderate Froude numbers($Fr=0.2{\sim}0.3$). Wave-potential corrections are dominate around the bow. On the other hand, Viscosity plays and important role at the stern with its boundary layer and wake development.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.29-31
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• 2019

The ZTO/p-Si thin film was produced and investigated for tunneling phenomena caused by the interface characteristics of the depletion layer. ZTO thin film was deposited and heat treated to produce barrier potentials by the depletion layer. The negative resistance characteristics were shown in the thin film of ZTO heat treated at $100^{\circ}C$, and the insulation properties were the best. Current decreased in the negative voltage direction by nonlinear show key characteristics, and current decreased in tunneling phenomenon by negative resistance in the positive voltage direction. Heat treated at $100^{\circ}C$, the ZTO thin film has increased barrier potential in the areas of the depletion layer and therefore the current has increased rapidly. The current has decreased again as we go beyond the depletion layer. Therefore, tunneling can be seen to make insulation better. In the ZTO thin film heat treated at $70^{\circ}C$ without tunneling, leakage current occurred as current increased at positive voltage. Therefore, tunneling effects by negative resistance were found to enhance insulation properties electrically.

• Korean Journal of Materials Research
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• v.26 no.6
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• pp.342-346
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• 2016

To observe the bonding structure and electrical characteristics of a GZO oxide semiconductor, GZO was deposited on ITO glasses and annealed at various temperatures. GZO was found to change from crystal to amorphous with increasing of the annealing temperatures; GZO annealed at $200^{\circ}C$ came to have an amorphous structure that depended on the decrement of the oxygen vacancies; increase the mobility due to the induction of diffusion currents occurred because of an increment of the depletion layer. The increasing of the annealing temperature caused a reduction of the carrier concentration and an increase of the bonding energy and the depletion layer; therefore, the large potential barrier increased the diffusion current dna the Hall mobility. However, annealing temperatures over $200^{\circ}C$ promoted crystallinity by the defects without oxygen vacancies, and then degraded the depletion layer, which became an Ohmic contact without a potential barrier. So the current increased because of the absence of a potential barrier.

• Journal of the Korean Chemical Society
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• v.14 no.3
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• pp.229-235
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• 1970

Electrodeposition of lead peroxide on the graphite core was studied. The results are following; 1) At more noble potential than 1.6V vs. S.C.E. and lower temperature than $40^{\circ}C$, $PbO_2$ deposited current efficiency is increased but deposited layer falls off easily from graphite core. 2) Oxygen overvoltage of $PbO_2$ deposited layer on the graphite core is largely with increasing $PbO_2$ depositing anodic potential and with lowlying electrolytic temperature. 3) To obtain the $PbO_2$ deposited layer without falling off from the graphite core, it is necessary to change the electrolytic conditions, anodic potential and electrolytic temperature, in four stages successively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.374-374
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• 2012

Nowadays, Active Matrix Organic Light-Emitting Diodes (AM-OLEDs) are the superior display device due to their vivid full color, perfect video capability, light weight, low driving power, and potential flexibility. One of the advantages of AM-OLED over Liquid Crystal Display (LCD) lies in its flexibility. The potential flexibility of AM-OLED is not fully explored due to its sensitivity to moisture and oxygen which are readily present in atmosphere, and there are no flexible encapsulation layers available to protect these. Therefore, we come up with a new concept of Inorganic-Organic hybrid thin film as the encapsulation layer. Our Inorganic layer is Al2O3 and Organic layer is F-Alucone. We deposited these layers in vacuum state using Atomic Layer Deposition (ALD) and Molecular Layer Deposition (MLD) techniques. We found the results are comparable to commercial requirement of 10-6 g/m2 day for Water Vapor Transmission Rate (WVTR). Using ALD and MLD, we can control the exact thin film thickness and fabricate more dense films than chemical or physical vapor deposition methods. Moreover, this hybrid encapsulation layer potentially has both the flexibility of organic layers and superior protection properties of inorganic layer.