• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.246.1-246.1
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• 2014

Over the past several years, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED). In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[1] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QDLEDs, blend of poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo) and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] are used as hole transporting layer (HTL) to improve hole transporting property. At the operating voltage of 8 V, the QDLED device emitted spectrally orange color lights with high luminance up to 2450 cd/m2, and showed current efficacy of 0.6 cd/A, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.101-106
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• 2009

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition (ALD). We studied the electrical and material characteristics of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3$ at $350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. Round-type MOS capacitors have been fabricated on Si substrates with $2000\;{\AA}$-thick Pt top electrodes. The composition rate of the dielectric material was analyzed using TEM (Transmission Electron Microscopy), XRD (X-ray Diffraction) and XPS (X-ray Photoelectron Spectroscopy). Also the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) characteristics were measured. We calculated the density of oxide trap charges and interface trap charges in our MOS device. At the interface between $HfO_2$ and Si, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. And finally, the generation of both oxide trap charge and interface trap charge in $HfO_2$ film was reduced effectively by using Hf metal layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.459-462
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• 2001

Interface effects on properties of NTC thermistors having Mn-Co-O spinel crytal structure system are analyzed by a mixing rule in case of mixed types and layered types between CuO and $Al_{2}O_{3}$ added compounds. With adding CuO and $Al_{2}O_{3}$, The compounds form completely solid solution and their resistance and B constant are changed due to the variation of conduction electrons by their ionic substitutions. The properties of mixed NTC thermistors are depended on the logarithmic mixing rule by a dispersed phase and they show slightly lower values due to the lattice mixing affect in compared with calculated values. The resistance of layered NTC thennistors is depended upon the series mixing rule containing the value of an interface layer and effected by the variation of its thickness, and it is changed rapidly to the logarithmic mixing rule by the connection between two layers with increasing the interface layer.

• Journal of Korea Multimedia Society
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• v.12 no.12
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• pp.1736-1744
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• 2009

In this paper, we present an animation sketching system using a two layered approach. Animation sketching is a popular technique to create informal animations but it is often suffered by the low-quality output due to a trade-off between convenience and complexity. Our aim is to support sketching practical animation scenes easily and fast while not complicating the simple sketching interface. The key idea is to combine two conceptual stop motion layers, a whiteboard and cutout animation layer, in a seamless interface. As a background, the whiteboard animation layer handles stroke-oriented objects, while the cutout animation layer takes charge of transform-oriented objects. We found that this approach enables users to express more complicated animation fast while still maintaining a concise sketching interface. We demonstrate the usability and flexibility through resulting animations from user experiments.

• Korean Journal of Materials Research
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• v.31 no.2
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• pp.97-100
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• 2021

We report the effect of Standard Clean-1 (SC-1) cleaning to remove residual Ti layers after silicidation to prevent Al diffusion into Si wafer for Ti Schottky barrier diodes (Ti-SBD). Regardless of SC-1 cleaning, the presence of oxygen atoms is confirmed by Auger electron spectroscopy (AES) depth profile analysis between Al and Ti-silicide layers. Al atoms at the interface of Ti-silicide and Si wafer are detected, when the SC-1 cleaning is not conducted after rapid thermal annealing. On the other hand, Al atoms are not found at the interface of Ti-SBD after executing SC-1 cleaning. Al diffusion into the interface between Ti-silicide and Si wafer may be caused by thermal stress at the Ti-silicide layer. The difference of the thermal expansion coefficients of Ti and Ti-silicide gives rise to thermal stress at the interface during the Al layer deposition and sintering processes. Although a longer sintering time is conducted for Ti-SBD, the Al atoms do not diffuse into the surface of the Si wafer. Therefore, the removal of the Ti layer by the SC-1 cleaning can prevent Al diffusion for Ti-SBD.

• Journal of the Korean GEO-environmental Society
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• v.17 no.1
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• pp.49-54
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• 2016

An active layer distributed on surface of an extreme cold region causes a frost heave by repeating the freezing and thawing according to the seasonal temperature change. Since the height of frost heave is greatly affected by the thickness of active layer, an accurate evaluation of the thickness of active layer is necessary for the safe design and construction of the infrastructure in the extreme cold region. In this study, dynamic cone penetrometer, which is miniaturized in-situ penetration device, is applied for the evaluation of active layer depth distribution. As the application tests, two dynamic cone penetration tests were conducted on the study sites located in Solomon and Alaska. In addition, ground temperature variations were obtained. As the results of the application tests, the depth of interface between the active layer and the permafrost was evaluated from the difference in dynamic cone penetration indexes of the active layer and the permafrost, and a layer was detected around the interface considered as an ice lens layer. Also, the interface depths between the above zero and the below zero temperature determined from the ground temperature variations correspond with the interface depths evaluated from the dynamic cone penetration tests. This study demonstrates that the dynamic cone penetrometer may be a useful tool for the evaluation of the active layer in the extreme cold region.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1343-1346
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• 2005

Self assembled monolayers (SAM) are generally used at the anode/organic interface to enhance the carrier injection in organic light emitting devices, which improves the electroluminescence performance of organic devices. This paper reports the use of SAM of 1-decanethiol (H-S(CH2)9CH3) at the cathode/organic interface to enhance the electron injection process for organic light emitting devices. Aluminum (Al), tris-(8-hydroxyquionoline) aluminum (Alq3), N,N'-diphenyl-N,N'-bis(3 -methylphenyl)-1,1'- diphenyl-4,4'-diamine (TPD) and indium-tin-oxide (ITO) were used as bottom cathode, an emitting layer (EML), a hole-transporting layer (HTL) and a top anode, respectively. The results of the capacitancevoltage (C-V), current density -voltage (J-V) and brightness-voltage (B-V), luminance and quantum efficiency measurements show a considerable improvement of the device performance. The dipole moment associated with the SAM layer decreases the electron schottky barrier between the Al and the organic interface, which enhances the electron injection into the organic layer from Al cathode and a considerable improvement of the device performance is observed. The turn-on voltage of the fabricated device with SAM layer was reduced by 6V, the brightness of the device was increased by 5 times and the external quantum efficiency is increased by 0.051%.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.248-248
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• 2016

We have investigated the crystallinity, preferential ordering, and interfacial stability of 1,4,5,8,9,11-hexaazatriphenylene-hexanitrile (HATCN) thin film interconnected with organic/inorganic multilayer. At the region close to the organic-organic interface, HATCN formed low crystalline order with substantial amorphous phase. As film growth continued, HATCN stacked with high crystalline phase. After a sputtering deposition of the indium zinc oxide (IZO) layer on top of HATCN/organic layer, the volume fraction of preferentially ordered HATCN crystals increased without any structural deterioration. In addition, the HATCN surface was kept quite stable by preserving the sharp interface between HATCN and sputtering deposited IZO layers.

• 한국방재학회:학술대회논문집
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• 2007.02a
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• pp.109-112
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• 2007

To determine design or remaining life of flexible pavement, tensile strain at the bottom of asphalt concrete course and vertical strain on top of subgrade should be estimated. Various computer programs can be used for determining the strain at the critical position in pavement. However, these are conducted under the assumptions of full bonded or unbound state of layer interface conditions. This study compares the output of finite element analysis and multi-layer elastic analysis as vertical load was applied to the surface of flexible pavement. It is noted that the pavement performance is significantly affected depending upon the interface conditions.

• Korean Journal of Materials Research
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• v.9 no.4
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• pp.419-427
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• 1999

TiNi shape memory alloy was shape memory heat-treated and investigated its mechanical properties with the variation of prestrain. Also 6061 Al matrix composites with TiNi shape memory alloy fiber as reinforcement have been fabricated by Permanent Mold Casting to investigate the microstructures and interface properties. Yield stress of TiNi wire was the most high in the case of before heat-treatment and then decreased as increasing heat-treatment time. In each heat-treatment condition, the yield stress of TiNi wire was not changed with increasing the amount of prestrain. The interface bonding of TiNi/6061Al composite was fine. There was a 2$\mu\textrm{m}$ thickness of diffusion reaction layer at the interface. We could find out that this diffusion reaction layer was made by the mutual diffusion. The diffusion rate from Al base to TiNi wire was faster than that of reverse diffusion and the amount of the diffusion was also a little more than that of reverse.