• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.6
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• pp.527-531
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• 2005

Fully coherent self-assembled InAs quantum dots(QDs) grown on Si (100) substrates by atmospheric pressure metalorganic chemical vapor deposition(APMOCVD) were grown and the effect of growth conditions such as growth rate and growth time on quantum dots' morphology such as densities and sizes was investigated. InAs QDs of 30 - 80 nm in diameters with densities in the range of (0.6 - 1.7) x $10^{10}\;cm^{-2}$ were achieved on Si substrates and InAs layer was changed from 2 dimensional growth to 3 dimensional one at a nominal thickness less than 0.48 ML. This is attributed to the higher ambient pressure of APMOCVD suppressing of In segregation from the 2 dimensional InAs layer. This In segregation looked to disturb the dot formation especially when the growth rate was low so that the dots became less dense and bigger as the growth rate was lower.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.6
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• pp.582-586
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• 2005

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also investigate the effect of the SiN mask on its optical property. By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21\times10^9\;cm^{-2}\;to\;9.7\times10^8\;cm^{-2}$. The PL intensity of GaN with SiN mask improved 2 times to that without SiN mask. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.

• Proceedings of the Korean Geotechical Society Conference
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• 1992.10a
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• pp.61-64
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• 1992

Recently, by the lack of fill material, the dredg and fill(hydraulic fill) method is commonly used in reclamation projects. Hydraulic fill method dredges the soil and send it with water through the transportation pipe to the site. The intial state of the hydraulic fill material is accordingly the mixture of water and soil skeleton which settles with time forming a new soil layer. The properties of new soil layer is governed the size of the soil skeleton, the flow velocity of mixing water, salt concentration, the distance from the discharge pipe outlet, and other dredging conditions when settling process occur. In this study, the effects of gradation of derdged soil on the deposition properties (with emphasis on the optimum spacing of the discharge pipes) was investigated by field test. It was found that the soft fine graind soil was forme at 350m from the discharge pipe outlet when the dredged material was classified as CL, while the soft fine grained soil was not formed even at the distance farther than 400m from the diacharge pipe outlet when the dredged material was classified as SM.

• Applied Science and Convergence Technology
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• v.25 no.2
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• pp.32-35
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• 2016

Using conventional deposition techniques, we demonstrate a method to fabricate ultra-smooth 10 nm silver films without using a wetting layer or co-depositing another material. The argon working pressure plays a crucial role in achieving an excellent surface flatness for silver films deposited by DC magnetron sputtering on an InP substrate. The formation of ultra-smooth silver thin films is very sensitive to the argon pressure. At the optimum deposition condition, a uniform silver film with an rms surface roughness of 0.81 nm has been achieved.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.370-370
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• 2009

이종접합태양전지는 구조적 대칭성 때문에 웨이퍼 두께가 감소하여도 보우잉이 일어나지 않는 특징이 있으며, 산요에서 개발한 이종접합태양전지의 효율이 22% 이상을 보이고 있다. 이종접합태양전지에서 비정질 실리콘과 실리콘 웨이퍼의 계면에 따라 이종접합태양전지의 특성이 크게 변화한다. 본 연구에서는 패시베이션 층으로 사용되는 비정질 실리콘을 hot wire chemical vapor deposition(HWCVD)을 사용하여 이종접합태양전지에 적용하였으며 기존의 plasma-enhanced chemical vapor deposition을 이용한 비정질 실리콘을 적용한 이종접합태양전지와 비교하였다. 패시베이션 특성을 확인하기 위해 quasi-steady state photoconductance로 minority carrier lifetime을 측정하였고, 태양전지 특성평가로는 암전류특성 및 광전류특성을 사용하였다. HWCVD를 사용하여 패시베이션한 태양전지의 경우 16.1%의 효율을 보였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.355-355
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• 2011

최근 석유 자원의 고갈로 인하여 요구되는 대체 에너지 개발의 필요성이 대두되고 있다. 그 중 태양에너지는 지구의 생명체가 살아가는 에너지의 근원으로서 매초 800~1000 W에 달하는 에너지양으로 볼 때 태양은 인류가 가장 풍부하게 활용할 수 있는 에너지원이다. 태양에너지를 이용한 염료감응형 태양전지(Dye-Sensitized Solar Cells, DSSCs)는 제조원가를 낮출 수 있고, 유리 전극을 이용한 투명한 태양전지를 제조할 수 있어 건물의 유리창등으로 응용할 수 있는 장점이있다. 이러한 태양전지의 에너지 변환 효율을 증가시키기 위한 방법으로 흡착된 염료에서 발생되는 광전자가 전해질의 산화, 환원되는 요오드 이온(I-/I3-)과의 재결합(recombination)현상으로 인해 광전변환효율이 떨어지는 현상이 발생한다. 이에 본 연구는 TiO2 전극 위에 높은 밴드 갭(band-gap)을 가지는 Al2O3 박막을 TriMethylAluminium(TMA) 전구체를 이용한 Atomic Layer Deposition(ALD) 공정을 사용하여 증착, 재결합 방지 효과에 대한 연구를 진행하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.370-370
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• 2011

ZnO 나노 라드 위에 Quantum dot을 형성하고 최종적으로 TiO2를 Atomic Layer Deposition방법으로 증착하여, 그 passivation 효과가 solar cell의 효율에 미친 영향에 대한 실험을 진행하였다. 암모니아 솔루션을 이용한 Hydrothermal 방법으로 수직한 1차원 형태의 ZnO 나노라드를 TCO 기판 위에 성장시킨다. 여기에 잘 알려진 SILAR와 CBD 방법으로 CdS, CdSe 양자점을 증착한다. 그리고 amorphous TiO2로 표면을 덮는 과정을 거치는데, TiO2가 좁은 간격으로 형성된 ZnO라드 구조 위에서 균일하고 정밀하게 증착되도록 하기 위해 Atomic Layer Deposition을 이용하였다. 사용된 precursor는 Titanium isopropoxide와 H2O이며, 실험상에서 0~5 nm 두께의 TiO2 박막을 형성해 보았다. 다양한 분석 방법을 통해 TiO2/QDs/ZnO의 shell-shell-core 구조를 조사했다. (Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), and X-ray Photoelectron Spectroscopy (XPS)). 이를 solar cell에 적용하고 I-V curve를 통해 그 효율을 확인하였으며, Electrochemical Impedance Spectroscopy (EIS)를 통해서 재결합 측면에서 나타나는 변화 양상을 확인하였다.

• Journal of Surface Science and Engineering
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• v.38 no.2
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• pp.55-59
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• 2005

ITO/Ni/ITO thin films were deposited on the PET by RF magnetron sputtering. Dependance of the process parameters such as deposition pressure, positions of Ni layer, on the transmittance, reflectance and sheet resistance of ITO/Ni/ITO film were investigated. When the Ni layer is placed at the center of ITO and deposition pressure is low, ITO/Ni/ITO films showed better optical and electrical properties. At these conditions, the transmittance, reflectance and sheet resistance of the ITO film were $90\%,\;0.38\%$ and $185\Omega/\Box$ respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.149-150
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• 2000

Lead-doped calcium sulfide(CaS:Pb) thin film electroluminescent devices were deposited using atomic layer deposition(ALD). CaS:Pb is a very promising blue phosphor showing very high luminance and the color coordinate close to the blue of cathode ray tube. The luminance, $L_{25}$, of CaS:Pb(1.6 mol.%) EL device was higher than 80 $cd/cm^2$ at a driving frequency of 60Hz. The color coordinates of blue EL emission of CaS:Pb deposited by ALD are consistent with the Pb concentration ranging from approximately 0.5 to 3 mol.%.

• Bulletin of the Korean Chemical Society
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• v.31 no.6
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• pp.1661-1664
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• 2010

The photocatalytic decomposition of toluene vapor by bare and $TiO_2$-coated carbon fibers was studied. Atomic layer deposition (ALD) was used to perform the $TiO_2$ coating. We show that, under our conditions, the photocatalytic activity of bare carbon fibers was comparable with that of $TiO_2$ films, which are known to be good photocatalysts. The origin of the high photocatalytic activity of bare carbon fibers is discussed.