• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05a
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• pp.30-33
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• 2003

YBCO coated conductor, also called the 2nd generation high temperature superconducting wire, consists of oxide multi-layer hetero-epitaxial thin films. Pulsed laser deposition (PLD) is one of many film deposition methods used to make coated conductor, and is the one known to be the best to make superconducting layer so far. As a part of the effort to make long length coated conductor, the optimum deposition condition of YBCO film on single crystal substrate (SrTiO3) was investigated using PLD. Substrate temperature, oxygen partial pressure, and laser fluence were varied to find the best combination to grow high quality YBCO film.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.7 no.1
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• pp.67-74
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• 2008

In this paper, the surface characteristics of the AIP-TiN coated of the SKH51 and SKD11 steels under various deposition times are presented with emphasis on the comparison of the two materials. The micro-particle, the surface roughness, the micro-hardness, the coated layer thickness, the atomic distribution of Ti, N and Fe elements and the adhesion are measured for various deposition times. It has been shown that the micro-particle, the surface roughness, the coated layer thickness and the atomic distribution of Ti, N and Fe elements are similar for the two cases regardless of the test deposition time from 10 to 180 minutes. However, it has been shown that the micro-hardness and the adhesion of the SKH51 steel are higher than the SKD11 steel, indicating that they are much affected by the hardness of the material to be coated.

• Journal of the Semiconductor & Display Technology
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• v.7 no.2
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• pp.63-67
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• 2008

The MgO protective layer plays an important role in plasma display panels (PDPs). Our previous work demonstrated that the properties of MgO thin film could be improved, which were deposited by ion beam assisted deposition (IBAD). However arc discharge always occurs during the IBAD process. To avoid this problem, oxygen neutral beam assisted deposition (NBAD) is used to deposit MgO thin films in this paper. The energy of the oxygen neutral beam was used as the parameter to control the deposition. The experimental results showed that the oxygen neutral beam energy was effective in determining in F/$F^+$ centers, crystal orientation, surface morphology of the MgO thin film, and the discharge characteristics of AC PDP. The lowest firing voltage $(V_f)$ and the highest secondary electron emission coefficient $(\gamma)$ were obtained when the neutral beam energy was 300 eV.

• Bulletin of the Korean Chemical Society
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• v.29 no.10
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• pp.1983-1987
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• 2008

This study demonstrates the electrochemical conversion of the synthetic procedure of monolayer-protected clusters using a thin toluene layer over an edge plane pyrolytic graphite electrode. A thin toluene layer with a thickness of 0.31 mm was coated over the electrode and an immiscible liquid/liquid water/toluene interface was introduced. The transfer of the tetrachloroaurate ($AuCl_4^-$) ions into the toluene layer interposed between the aqueous solution and the electrode surface was electrochemically monitored. The $AuCl_4^-$ ions initially could not move through into the toluene layer, showing no reduction wave, but, in the presence of the phase transfer reagent, tetraoctylammonium bromide (TOABr), a cathodic wave at 0.23 V vs. Ag/AgCl was observed, indicating the reduction of the transferred $AuCl_4^-$ ions in the toluene layer. In the presence of dodecanethiol together with TOABr, a self-assembled monolayer was formed over the electro-deposited metallic gold surface. The E-SEM image of the surface indicates the formation of a highly porous metallic gold surface, rather than individual nanoparticles, over the EPG electrode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.8
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• pp.505-509
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• 2016

We have investigated the characteristics of amorphous silicon (a-Si) thin-film solar cell by inserting barrier layer. The conversion efficiency of a-Si thin-film solar cells on graphite substrate shows nearly zero because of the surface roughness of the graphite substrate. To enhance the performance of solar cells, the surface morphology of the back side were modified by changing the barrier layer on graphite. The surface roughness of graphite substrate with the barrier layer grown by plasma enhanced chemical vapor deposition (PECVD) reduced from ~2 um to ~75 nm. In this study, the combination of the barrier layer on graphite substrate is important to increase solar cell efficiency. We achieved ~ 7.8% cell efficiency for an a-Si thin-film solar cell on graphite substrate with SiNx/SiOx stack barrier layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.268-269
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• 2005

YBCO 박막형 초전도체(coated conductor) 제조를 위해서는 여러 층의 완충층이 필요하다. 현재 일반적인 완충층의 구조는 seed layer로써 $Y_2O_3$, diffusion barrier로 YSZ, capping layer로 $CeO_2$가 사용되고 있다. 특히, capping layer로 $CeO_2$는 YBCO와 lattice mismatch가 매우 우수한 산화물로 이용되고 있다 본 연구에서는 $CeO_2$ capping layer가 증착 방법에 따라 그 위에 증착되어지는 초전도층의 특성에 어떤 영향을 미치는지 연구하였다. $CeO_2$를 thermal evaporation과 PLD (pulsed laser deposition) 증착 방법으로 증착 한 후 그 위에 PLD 방법으로 YBCO를 증착하여 coated conductor의 성능을 평가하였다.

• Journal of the Korean Ceramic Society
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• v.26 no.4
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• pp.539-549
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• 1989

Polycrystalline TiO2 thin films were deposited on Si and Al2O3 substrates by CVD method. Ethyl titanate, Ti(OC2H5)4, was used as a source material for Ti and O, and Ar was used for carrier gas. In the surface chemical reaction controlled deposition condition, the apparent activation energy of 6.74 Kcal/mole was obtained, and the atomic adsorption on substrate surface was proved to be governed by Rideal-Elley mechanism. In the mass transfer controlled deposition condition, the deposition rate was in a good agreement with the result which was calculated by the simple boundary layer theory. It was also observed that TiO2 thin films show different surface morphology according to the different deposition mechanism, which was fixed by deposition conditions. This phenomenon could be well explained by the surface perturbation theory.

• Macromolecular Research
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• v.14 no.4
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• pp.478-482
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• 2006

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.61-61
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• 2001

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.8-14
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• 2007

In this paper, $HfO_2$/Hf stacked film has been applied as the gate dielectric in MOS devices. The $HfO_2$ thin film was deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAHf and $O_3$ as precursors. Prior to the deposition of the $HfO_2$ film, a thin Hf metal layer was deposited as an intermediate layer. Round-type MOS capacitors have been fabricated on Si substrates with 2000${\AA}$-thick Al or Pt top electrode. The prepared film showed the stoichiometric components. At the $HfO_2$/Si interface, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. It seems that the intermediate Hf metal layer has a benefit for the enhancement of electric characteristics of gate dielectric in $HfO_2$/Si structure.